MCP6021/1R/2/3/4. Rail-to-Rail Input/Output, 10 MHz Op Amps. Features. Description. Typical Applications. Package Types.

Transcription

1 Rail-to-Rail Input/Output, 10 MHz Op Amps Features Rail-to-Rail Input/Output Wide Bandwidth: 10 MHz (typ.) Low Noise: 8.7 nv/ Hz, at 10 khz (typ.) Low Offset Voltage: - Industrial Temperature: ±500 µv (max.) - Extended Temperature: ±50 µv (max.) Mid-Supply V REF : MCP601 and MCP603 Low Supply Current: 1 ma (typ.) Total Harmonic Distortion: % (typ., G = 1) Unity Gain Stable Power Supply Range:.5V to 5.5V Temperature Range: - Industrial: -40 C to +85 C - Extended: -40 C to +15 C Typical Applications Automotive Driving A/D Converters Multi-Pole Active Filters Barcode Scanners Audio Processing Communications DAC Buffer Test Equipment Medical Instrumentation Available Tools SPICE Macro Model (at FilterLab software (at Typical Application Photo Detector 100 pf V DD / 5.6 pf 100 kω MCP601 Transimpedance Amplifier Description The MCP601, MCP601R, MCP60, MCP603 and MCP604 from Microchip Technology Inc. are rail-torail input and output op amps with high performance. Key specifications include: wide bandwidth (10 MHz), low noise (8.7 nv/ Hz), low input offset voltage and low distortion ( % THD+N). The MCP603 also offers a Chip Select pin (CS) that gives power savings when the part is not in use. The single MCP601 and MCP601R are available in SOT-3-5. The single MCP601, single MCP603 and dual MCP60 are available in 8-lead PDIP, SOIC and TSSOP. The Extended Temperature single MCP601 is available in 8-lead MSOP. The quad MCP604 is offered in 14-lead PDIP, SOIC and TSSOP packages. The MCP601/1R//3/4 family is available in Industrial and Extended temperature ranges. It has a power supply range of.5v to 5.5V. Package Types V OUT 1 V SS V IN + 3 MCP601 SOT-3-5 MCP601R SOT V DD MCP60 PDIP SOIC, TSSOP V OUTA V INA 4 V IN V INA + V SS V DD 7 V OUTB 6 V INB 5 V INB + MCP603 PDIP SOIC, TSSOP V OUT 1 5 V SS V DD V IN V IN NC V IN 1 8 CS 7 V DD V IN V OUT MCP601 V PDIP SOIC, SS 4 5 V REF MSOP, TSSOP MCP604 NC 1 8 NC PDIP SOIC, TSSOP V IN 7 V DD V OUTA 1 14 V OUTD V IN V V INA OUT 13 V IND V SS 4 5 V V INA + REF 3 1 V IND + V DD 4 11 V SS V INB V INC + V INB 6 9 V INC V OUTB 7 8 V OUTC 006 Microchip Technology Inc. DS1685C-page 1

2 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings V DD V SS...7.0V All Inputs and Outputs... V SS 0.3V to V DD +0.3V Difference Input Voltage... V DD V SS Output Short Circuit Current...continuous Current at Input Pins...± ma Current at Output and Supply Pins...±30 ma Storage Temperature C to +150 C Junction Temperature C ESD Protection on all pins (HBM; MM)... kv; 00V Notice: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, T A = +5 C, V DD = +.5V to +5.5V, V SS = GND, V CM = V DD /, V OUT V DD / and R L =10kΩ to V DD /. Input Offset Input Offset Voltage: Industrial Temperature Parts V OS µv V CM = 0V Extended Temperature Parts V OS µv V CM = 0V, V DD = 5.0V Extended Temperature Parts V OS mv V CM = 0V, V DD = 5.0V T A = -40 C to +15 C Input Offset Voltage Temperature Drift ΔV OS /ΔT A ±3.5 µv/ C T A = -40 C to +15 C Power Supply Rejection Ratio PSRR db V CM = 0V Input Current and Impedance Input Bias Current I B 1 pa Industrial Temperature Parts I B pa T A = +85 C Extended Temperature Parts I B 640 5,000 pa T A = +15 C Input Offset Current I OS ±1 pa Common-Mode Input Impedance Z CM Ω pf Differential Input Impedance Z DIFF Ω pf Common-Mode Common-Mode Input Range V CMR V SS -0.3 V DD +0.3 V Common-Mode Rejection Ratio CMRR db V DD = 5V, V CM = -0.3V to 5.3V CMRR db V DD = 5V, V CM = 3.0V to 5.3V CMRR db V DD = 5V, V CM = -0.3V to 3.0V Voltage Reference (MCP601 and MCP603 only) V REF Accuracy (V REF V DD /) V REF_ACC mv V REF Temperature Drift ΔV REF /ΔT A ±100 µv/ C T A = -40 C to +15 C Open-Loop Gain DC Open-Loop Gain (Large Signal) A OL db V CM = 0V, V OUT = V SS +0.3V to V DD -0.3V Output Maximum Output Voltage Swing V OL, V OH V SS +15 V DD -0 mv 0.5V output overdrive Output Short Circuit Current I SC ±30 ma V DD =.5V I SC ± ma V DD = 5.5V Power Supply Supply Voltage V S V Quiescent Current per Amplifier I Q ma I O = 0 DS1685C-page 006 Microchip Technology Inc.

3 AC ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, T A = +5 C, V DD = +.5V to +5.5V, V SS = GND, V CM = V DD /, V OUT V DD /, R L =10kΩ to V DD / and C L = 60 pf. AC Response Gain Bandwidth Product GBWP 10 MHz Phase Margin at Unity-Gain PM 65 G = +1 Settling Time, 0.% t SETTLE 50 ns G = +1, V OUT = 100 mv p-p Slew Rate SR 7.0 V/µs Total Harmonic Distortion Plus Noise f = 1 khz, G = +1 V/V THD+N % V OUT = 0.5V to 3.5V (1.75V ± 1.50V PK ), V DD = 5.0V, BW = khz f = 1 khz, G = +1 V/V, R L = 600Ω THD+N % V OUT = 0.5V to 3.5V (1.75V ± 1.50V PK ), V DD = 5.0V, BW = khz f = 1 khz, G = +1 V/V THD+N % V OUT = 4V P-P, V DD = 5.0V, BW = khz f = 1 khz, G = +10 V/V THD+N % V OUT = 4V P-P, V DD = 5.0V, BW = khz f = 1 khz, G = +100 V/V THD+N % V OUT = 4V P-P, V DD = 5.0V, BW = khz Noise Input Noise Voltage E ni.9 µvp-p f = 0.1 Hz to 10 Hz Input Noise Voltage Density e ni 8.7 nv/ Hz f = 10 khz Input Noise Current Density i ni 3 fa/ Hz f = 1 khz MCP603 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, T A = +5 C, V DD = +.5V to +5.5V, V SS = GND, V CM = V DD /, V OUT V DD /, R L =10kΩ to V DD / and C L = 60 pf. CS Low Specifications CS Logic Threshold, Low V IL V SS 0. V DD V CS Input Current, Low I CSL µa CS = V SS CS High Specifications CS Logic Threshold, High V IH 0.8 V DD V DD V CS Input Current, High I CSH µa CS = V DD GND Current I SS µa CS = V DD Amplifier Output Leakage I O(LEAK) 0.01 µa CS = V DD CS Dynamic Specifications CS Low to Amplifier Output Turn-on Time t ON 10 µs G = +1, V IN = V SS, CS = 0.V DD to V OUT = 0.45V DD time CS High to Amplifier Output High-Z Time t OFF 0.01 µs G = +1, V IN = V SS, CS = 0.8V DD to V OUT = 0.05V DD time Hysteresis V HYST 0.6 V V DD = 5.0V, Internal Switch 006 Microchip Technology Inc. DS1685C-page 3

4 TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, V DD = +.5V to +5.5V and V SS = GND. Temperature Ranges Industrial Temperature Range T A C Extended Temperature Range T A C Operating Temperature Range T A C Note 1 Storage Temperature Range T A C Thermal Package Resistances Thermal Resistance, 5L-SOT-3 θ JA 56 C/W Thermal Resistance, 8L-PDIP θ JA 85 C/W Thermal Resistance, 8L-SOIC θ JA 163 C/W Thermal Resistance, 8L-MSOP θ JA 06 C/W Thermal Resistance, 8L-TSSOP θ JA 14 C/W Thermal Resistance, 14L-PDIP θ JA 70 C/W Thermal Resistance, 14L-SOIC θ JA 10 C/W Thermal Resistance, 14L-TSSOP θ JA 100 C/W Note 1: The industrial temperature devices operate over this extended temperature range, but with reduced performance. In any case, the internal junction temperature (T J ) must not exceed the absolute maximum specification of 150 C. CS t ON t OFF V OUT High-Z Amplifier On High-Z I SS -50 na (typ.) -1 ma (typ.) -50 na (typ.) I CS 10 na (typ.) 10 na (typ.) 10 na (typ.) FIGURE 1-1: Timing diagram for the CS pin on the MCP603. DS1685C-page Microchip Technology Inc.

5 8-Lead Plastic Dual In-line (P) 300 mil (PDIP) E1 D n 1 α E A A c A1 L β eb B1 B p Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n 8 8 Pitch p Top to Seating Plane A Molded Package Thickness A Base to Seating Plane A Shoulder to Shoulder Width E Molded Package Width E Overall Length D Tip to Seating Plane L Lead Thickness c Upper Lead Width B Lower Lead Width B Overall Row Spacing eb Mold Draft Angle Top α Mold Draft Angle Bottom β * Controlling Parameter Significant Characteristic Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed.010 (0.54mm) per side. JEDEC Equivalent: MS-001 Drawing No. C Microchip Technology Inc. DS1685C-page 1

6 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X /XX Device Temperature Range Package Device: MCP601 Single Op Amp MCP601T Single Op Amp (Tape and Reel for SOT-3, SOIC, TSSOP, MSOP) MCP601R Single Op Amp MCP601RT Single Op Amp (Tape and Reel for SOT-3) MCP60 Dual Op Amp MCP60T Dual Op Amp (Tape and Reel for SOIC and TSSOP) MCP603 Single Op Amp w/ CS MCP603T Single Op Amp w/ CS (Tape and Reel for SOIC and TSSOP) MCP604 Quad Op Amp MCP604T Quad Op Amp (Tape and Reel for SOIC and TSSOP) Temperature Range: I = -40 C to +85 C E = -40 C to +15 C Package: OT = Plastic Small Outline Transistor (SOT-3), 5-lead (MCP601, E-Temp; MCP601R, E-Temp) MS = Plastic MSOP, 8-lead (MCP601, E-Temp) P = Plastic DIP (300 mil Body), 8-lead, 14-lead SN = Plastic SOIC (150mil Body), 8-lead SL = Plastic SOIC (150 mil Body), 14-lead ST = Plastic TSSOP, 8-lead (MCP601,I-Temp; MCP60, I-Temp, E-Temp; MCP603, I-Temp, E-Temp;) ST = Plastic TSSOP, 14-lead Examples: a) MCP601T-E/OT: Tape and Reel, 5LD SOT-3. b) MCP601-E/P: c) MCP601-E/SN: 8LD SOIC. a) MCP601RT-E/OT:Tape and Reel, 5LD SOT-3. a) MCP60-I/P: Industrial temperature, b) MCP60-E/P: c) MCP60T-E/ST: Tape and Reel, 8LD TSSOP. a) MCP603-I/P: Industrial temperature, b) MCP603-E/P: c) MCP603-E/SN: 8LD SOIC. a) MCP604-I/SL: Industrial temperature, 14LD SOIC. b) MCP604-E/SL: 14LD SOIC. c) MCP604T-E/ST: Tape and Reel, 14LD TSSOP. 006 Microchip Technology Inc. DS1685C-page 31