15 MHz, Rail-to-Rail, Dual Operational Amplifier OP262-EP
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1 5 MHz, Rail-to-Rail, Dual Operational Amplifier OP262-EP FEATURES Supports defense and aerospace applications (AQEC standard) Military temperature range ( 55 C to +25 C) Controlled manufacturing baseline One assembly/test site One fabrication site Enhanced product change notification Qualification data available on request Wide bandwidth: 5 MHz Low offset voltage: 325 μv maximum Low noise: 9.5 nv/ khz Single-supply operation: 2.7 V to 2 V Low supply current: 85 μa maximum Rail-to-rail output swing Low TCVOS: μv/ C typical High slew rate: 3 V/μs No phase inversion Unity-gain stable APPLICATIONS Portable instrumentation Sampling ADC amplifiers Precision filters PIN CONFIGURATION OUT A IN A 2 +IN A 3 V 4 OP262-EP TOP VIEW (Not to Scale) 8 V+ 7 OUT B 6 IN B 5 +IN B Figure. 8-Lead Narrow-Body SOIC (R Suffix) GENERAL DESCRIPTION The OP262-EP is a low power, precision op amp that features a rail-to-rail output and a 5 MHz bandwidth. With its low offset voltage of 45 μv (typical) and low noise, it is well suited for precision filter and control applications. This product operates from a single supply as low as 2.7 V or from dual supplies up to ±6 V. The OP262-EP is specified over the military temperature range ( 55 C to +25 C) and is available in an 8-lead SOIC_N package. Additional applications information is available in the OP62/OP262/OP462 data sheet Rev. Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 96, Norwood, MA , U.S.A. Tel: Fax: Analog Devices, Inc. All rights reserved.
2 TABLE OF CONTENTS Features... Applications... Pin Configuration... General Description... Revision History... 2 Specifications... 3 Electrical Characteristics... 3 Absolute Maximum Ratings...6 ESD Caution...6 Typical Performance Characteristics...7 Outline Dimensions... Ordering Guide... REVISION HISTORY 7/ Revision : Initial Version Rev. Page 2 of 2
3 SPECIFICATIONS ELECTRICAL CHARACTERISTICS VS = 5. V, VCM = V, TA = 25 C, unless otherwise noted. Table. Parameter Symbol Test Conditions/Comments Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS μv 55 C TA +25 C mv Input Bias Current IB 36 6 na 55 C TA +25 C 65 na Input Offset Current IOS ±2.5 ±25 na 55 C TA +25 C ±4 na Input Voltage Range VCM 4 V Common-Mode Rejection CMRR V VCM 4. V, 55 C TA +25 C 7 db Large Signal Voltage Gain AVO RL = 2 kω,.5 VOUT 4.5 V 3 V/mV RL = kω,.5 VOUT 4.5 V V/mV RL = kω, 55 C TA +25 C 4 V/mV Offset Voltage Drift ΔVOS/ΔT μv/ C Bias Current Drift ΔIB/ΔT 25 pa/ C OUTPUT CHARACTERISTICS Output Voltage Swing High VOH IL = 25 μa, 55 C TA +25 C V IL = 5 ma V Output Voltage Swing Low VOL IL = 25 μa, 55 C TA +25 C 4 5 mv IL = 5 ma 65 5 mv Short-Circuit Current ISC Short to ground ±8 ma Maximum Output Current IOUT ±3 ma POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 7 V 2 db 55 C TA +25 C 9 db Supply Current/Amplifier ISY VOUT = 2.5 V 5 7 μa 55 C TA +25 C 85 μa DYNAMIC PERFORMANCE Slew Rate SR V < VOUT < 4 V, RL = kω V/μs Settling Time ts To.%, AV =, VO = 2 V step 54 ns Gain Bandwidth Product GBP 5 MHz Phase Margin φm 6 Degrees NOISE PERFORMANCE Voltage Noise en p-p. Hz to Hz.5 μv p-p Voltage Noise Density en f = khz 9.5 nv/ Hz Current Noise Density in f = khz.4 pa/ Hz Offset voltage drift is the average of the 55 C to +25 C delta and the +25 C to +25 C delta. Rev. Page 3 of 2
4 VS = 3. V, VCM = V, TA = 25 C, unless otherwise noted. Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS μv 55 C TA +25 C mv Input Bias Current IB 36 6 na Input Offset Current IOS ±2.5 ±25 na Input Voltage Range VCM 2 V Common-Mode Rejection CMRR V VCM 2. V, 55 C TA +25 C 7 db Large Signal Voltage Gain AVO RL = 2 kω,.5 V VOUT 2.5 V 2 V/mV RL = kω,.5 V VOUT 2.5 V 2 3 V/mV OUTPUT CHARACTERISTICS Output Voltage Swing High VOH IL = 25 μa V IL= 5 ma V Output Voltage Swing Low VOL IL = 25 μa 4 5 mv IL= 5 ma 66 5 mv POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 7 V db 55 C TA +25 C 6 db Supply Current/Amplifier ISY VOUT =.5 V 5 65 μa 55 C TA +25 C 85 μa DYNAMIC PERFORMANCE Slew Rate SR RL = kω V/μs Settling Time ts To.%, AV =, VO = 2 V step 575 ns Gain Bandwidth Product GBP 5 MHz Phase Margin φm 59 Degrees NOISE PERFORMANCE Voltage Noise en p-p. Hz to Hz.5 μv p-p Voltage Noise Density en f = khz 9.5 nv/ Hz Current Noise Density in f = khz.4 pa/ Hz Rev. Page 4 of 2
5 VS = ±5. V, VCM = V, TA = 25 C, unless otherwise noted. Table 3. Parameter Symbol Test Conditions/Comments Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS μv 55 C TA +25 C mv Input Bias Current IB 26 5 na 55 C TA +25 C 65 na Input Offset Current IOS ±2.5 ±25 na 55 C TA +25 C ±4 na Input Voltage Range VCM 5 +4 V Common-Mode Rejection CMRR 4.9 V VCM +4. V, 55 C TA +25 C 7 db Large Signal Voltage Gain AVO RL = 2 kω, 4.5 V VOUT +4.5 V 35 V/mV RL = kω, 4.5 V VOUT +4.5 V 75 2 V/mV 55 C TA +25 C 25 V/mV Long-Term Offset Voltage VOS 6 μv Offset Voltage Drift 2 ΔVOS/ΔT μv/ C Bias Current Drift ΔIB/ΔT 25 pa/ C OUTPUT CHARACTERISTICS Output Voltage Swing High VOH IL = 25 μa, 55 C TA +25 C V IL= 5 ma V Output Voltage Swing Low VOL IL = 25 μa, 55 C TA +25 C V IL= 5 ma V Short-Circuit Current ISC Short to ground ±8 ma Maximum Output Current IOUT ±3 ma POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±.35 V to ±6 V db 55 C TA +25 C 6 db Supply Current/Amplifier ISY VOUT = V 65 8 μa 55 C TA +25 C.5 ma VOUT = V μa 55 C TA +25 C ma Supply Voltage Range VS 3. (±.5) 2 (±6) V DYNAMIC PERFORMANCE Slew Rate SR 4 V < VOUT < +4 V, RL = kω 3 V/μs Settling Time ts To.%, AV =, VO = 2 V step 475 ns Gain Bandwidth Product GBP 5 MHz Phase Margin φm 64 Degrees NOISE PERFORMANCE Voltage Noise en p-p. Hz to Hz.5 μv p-p Voltage Noise Density en f = khz 9.5 nv/ Hz Current Noise Density in f = khz.4 pa/ Hz Long-term offset voltage is guaranteed by a hour life test performed on three independent lots at 25 C, with an LTPD of.3. 2 Offset voltage drift is the average of the 55 C to +25 C delta and the +25 C to +25 C delta. Rev. Page 5 of 2
6 ABSOLUTE MAXIMUM RATINGS Table 4. Parameter Min Supply Voltage ±6 V Input Voltage ±6 V Differential Input Voltage 2 ±.6 V Internal Power Dissipation SOIC (S) Observe Derating Curves Output Short-Circuit Duration Observe Derating Curves Storage Temperature Range 65 C to +5 C Operating Temperature Range 55 C to +25 C Junction Temperature Range 65 C to +5 C Lead Temperature Range, (Soldering, sec) 3 C For supply voltages greater than 6 V, the input voltage is limited to less than or equal to the supply voltage. 2 For differential input voltages greater than.6 V, the input current should be limited to less than 5 ma to prevent degradation or destruction of the input devices. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 5. Package Type θja θjc Unit 8-Lead SOIC (R) C/W θ JA is specified for the worst-case conditions, that is, θ JA is specified for a device soldered in circuit board for SOIC package. ESD CAUTION Rev. Page 6 of 2
7 TYPICAL PERFORMANCE CHARACTERISTICS QUANTITY (Amplifiers) COUNT = 72 OP AMPS INPUT OFFSET VOLTAGE (µv) INPUT OFFSET VOLTAGE (µv) Figure 2. Input Offset Voltage Distribution Figure 5. Input Offset Voltage vs. Temperature QUANTITY (Amplifiers) COUNT = 36 OP AMPS INPUT BIAS CURRENT (na) INPUT OFFSET DRIFT, TCV OS (µv, C) Figure 3. Input Offset Voltage Drift (TCVOS) Figure 6. Input Bias Current vs. Temperature INPUT BIAS CURRENT (na) INPUT OFFSET CURRENT (na) COMMON-MODE VOLTAGE (V) Figure 4. Input Bias Current vs. Common-Mode Voltage Figure 7. Input Offset Current vs. Temperature Rev. Page 7 of 2
8 5.2 OUTPUT HIGH VOLTAGE (V) I OUT = 25µA I OUT = 5mA OUTPUT LOW VOLTAGE (mv) V S = V V S = 3V Figure 8. Output High Voltage vs. Temperature LOAD CURRENT (ma) Figure. Output Low Voltage to Supply Rail vs. Load Current OUTPUT LOW VOLTAGE (mv) I OUT = 5mA SUPPLY CURRENT (ma) V S = V V S = 3V I OUT = 25µA Figure 9. Output Low Voltage vs. Temperature Figure 2. Supply Current/Amplifier vs. Temperature R L = kω.7 OPEN-LOOP GAIN (V/mV) 6 4 R L = 2kΩ SUPPLY CURRENT (ma) R L = 6kΩ Figure. Open-Loop Gain vs. Temperature SUPPLY VOLTAGE (V) Figure 3. Supply Current/Amplifier vs. Supply Voltage Rev. Page 8 of 2
9 5 4 GAIN (db) GAIN PHASE PHASE SHIFT (Degrees) STEP SIZE (V) %.%.%.% 3 k M M M Figure 4. Open-Loop Gain and Phase vs. Frequency (No Load) SETTLING TIME (ns) Figure 7. Step Size vs. Settling Time CLOSED-LOOP GAIN (db) R L = 83Ω C L = 5pF OVERSHOOT (%) V OUT = ±5mV R L = kω +OS OS 2 3 k k M M M Figure 5. Closed-Loop Gain vs. Frequency CAPACITANCE (pf) Figure 8. Small-Signal Overshoot vs. Capacitance MAXIMUM OUTPUT SWING (V p-p) A VCL = R L = kω C L = 5pF DISTORTION<% NOISE DENSITY (nv/ Hz) k k M M Figure 6. Maximum Output Swing vs. Frequency k Figure 9. Voltage Noise Density vs. Frequency Rev. Page 9 of 2
10 NOISE DENSITY (pa/ Hz) PSRR (db) PSRR PSRR 3 k Figure 2. Current Noise Density vs. Frequency k k k M M Figure 23. PSRR vs. Frequency mV 2s OUTPUT IMPEDANCE (Ω) 2 5 A VCL = A VCL = 5 k M M Figure 2. Output Impedance vs. Frequency A V = kω e n =.5µV p-p Figure 24.. Hz to Hz Noise V V IN = 2V p-p V S = ±5V A V = CMRR (db) k k k M M Figure 22. CMRR vs. Frequency V 2µs Figure 25. No Phase Reversal (VIN = 2 V p-p, VS = ±5 V, AV = ) Rev. Page of 2
11 OUTLINE DIMENSIONS 5. (.968) 4.8 (.89) 4. (.574) 3.8 (.497) (.244) 5.8 (.2284).25 (.98). (.4) COPLANARITY. SEATING PLANE.27 (.5) BSC.75 (.688).35 (.532).5 (.2).3 (.22) 8.25 (.98).7 (.67).5 (.96).25 (.99).27 (.5).4 (.57) 45 COMPLIANT TO JEDEC STANDARDS MS-2-AA CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. Figure Lead Standard Small Outline Package [SOIC_N] Narrow Body (R-8) Dimensions shown in millimeters and (inches) 247-A ORDERING GUIDE Model Temperature Range Package Description Package Option OP262TRZ-EP 55 C to +25 C 8-Lead Standard Small Outline Package [SOIC_N] R-8 OP262TRZ-EP-R7 55 C to +25 C 8-Lead Standard Small Outline Package [SOIC_N] R-8 Z = RoHS Compliant Part. Rev. Page of 2
12 NOTES 2 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D /() Rev. Page 2 of 2
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Single-Supply, Rail-to-Rail Low Power FET-Input Op Amp AD8 FEATURES True single-supply operation Output swings rail-to-rail Input voltage range extends below ground Single-supply capability from 5 V to
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FEATURES Low input offset voltage:.2 mv typical High output current drive: 3 ma Wide range of operating voltage: ±5 V to ±5 V High slew rate: 2 V/µs typical High gain bandwidth product: 3.5 MHz typical
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a FEATURES Excellent Speed:. V/ms Typ Fast Settling (.%): ms Typ Unity-Gain Stable High-Gain Bandwidth: MHz Typ Low Input Offset Voltage: mv Max Low Offset Voltage Drift: mv/ C Max High Gain: V/mV Min
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