AZV831/2. Description. Pin Assignments NEW PRODUCT. Features. Applications

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1 SINGLE/DUAL LOW BIAS CURRENT, LOW VOLTAGE, RAIL-TO-RAIL INPUT/OUTPUT CMOS OPERATIONAL AMPLIFIERS Description Pin Assignments The AZV83/AZV832 is single/dual channels rail-to-rail input and output amplifier, which provides a wide input common-mode voltage range and output voltage swing capability for maximum signal swings in low supply voltage applications. The device is fully specified to operate from.6v to 5.V single supply, or ±.8V and ±2.5V dual supply applications. It features very low supply current dissipation µa per channel, which is well suitable for today's low-voltage and/or portable systems. OUTPUT VEE IN+ (Top View) VCC IN- The AZV83/AZV832 features optimal performance in very low bias current of pa, which enables the IC to be used for integrators, photodiode amplifiers, and piezoelectric sensors etc. The device has typical.5mv input offset voltage and provides MHz bandwidth. SOT-23-5 (AZV83) (Top View) The AZV83/AZV832 adopts the latest packaging technology to meet the most demanding space-constraint applications. The AZV83 is available in standard SOT-23-5 package. The AZV832 is offered in the traditional MSOP-8 and SOIC-8 packages. Features Single Supply Voltage Range:.6V to 5.5V Ultra-low Input Bias Current: pa (Typ.) Offset Voltage:.5mV (Typ.), 2.5mV (Max.) Rail-to-Rail Input V CM: mv beyond = 5V Rail-to-Rail Output Swing: kω Load: 4mV from Rail kω Load: 25mV from Rail Supply Current: μa/amplifier Unity Gain Stable Gain Bandwidth Product:.MHz Slew = 5.V Operation Ambient Temperature Range: - C to +85 C Totally Lead-Free & Fully RoHS Compliant (Notes & 2) Halogen and Antimony Free. Green Device (Note 3) OUTPUT 8 VCC IN OUTPUT 2 IN IN 2- VEE 4 5 IN 2+ SOIC-8/MSOP-8 (AZV832) Applications Sensors Photodiode Amplification Battery-Powered Instrumentation Pulse Blood Oximeter, Glucose Meter Notes:. No purposely added lead. Fully EU Directive 2/95/EC (RoHS) & /65/EU (RoHS 2) compliant. 2. See for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<ppm total Br + Cl) and <ppm antimony compounds. of 24 March 7

2 Functional Block Diagram VCC IN- 4 Class AB Control OUTPUT IN VEE For AZV VCC IN-/IN2-2,6 Class AB Control,7 OUTPUT/ OUTPUT2 IN+/IN2+ 3, VEE For AZV832/Amplifier 2 of 24 March 7

3 Absolute Maximum Ratings (Note 4) Symbol Parameter Rating Unit Power Supply Voltage 6. V V ID Differential Input Voltage 6. V Input Voltage -.3 to +.5 V T J Operating Junction Temperature + C SOT θ JA Thermal Resistance (Junction to Ambient) SOIC-8 C/W MSOP-8 T STG Storage Temperature Range -65 to + C T LEAD Lead Temperature (Soldering, Seconds) +2 C ESD (Human Body Model) V ESD (Machine Model) V Note 4: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability. Recommended Operating Conditions Symbol Parameter Min Max Unit Supply Voltage V Operating Ambient Temperature Range C 3 of 24 March 7

4 Electrical Characteristics.6V DC Electrical Characteristics ( =.6V, V EE =, = /2, V CM = /2, = +25 C, unless otherwise noted.) Symbol Parameter Conditions Min Typ Max Unit V OS Input Offset Voltage mv I B Input Bias Current. pa I OS Input Offset Current. pa V CM Input Common-mode Voltage Range V CMRR Common-mode Rejection Ratio V CM = -.2V to.8v db G V Large Signal Voltage Gain = kω to /2, =.2V to.4v 9 db ΔV OS/ΔT Input Offset Voltage Drift 2. μv/ C V OL/V OH Output Voltage Swing from Rail = kω to /2 = kω to /2 3 5 mv I SINK Sink = 8 Output Current I SOURCE Source = V ma Z OUT Closed-loop Output Impedance f = khz, A V = 9 Ω PSRR Power Supply Rejection Ratio =.6V to 5.V 66 8 db I CC Supply Current (Per Amplifier) = /2, I OUT = 9 μa.6v AC Electrical Characteristics ( =.6V, V EE =, = /2, V CM = /2, = +25 C, unless otherwise noted.) Symbol Parameter Conditions Min Typ Max Unit GBP Gain Bandwidth Product = kω. MHz SR Slew Rate (Note 5) V Step, = pf, = kω.32 V/μs φ M Phase Margin = kω 67 Degrees THD+N Total Harmonic Distortion+Noise f = khz, A V =, = V pp = kω, = pf - db e n Voltage Noise Density f = khz 27 nv / Hz Note 5: Number specified is the positive slew rate. 4 of 24 March 7

5 Electrical Characteristics (Cont.).8V DC Electrical Characteristics ( =.8V, V EE =, = /2, V CM = /2, = +25 C, unless otherwise noted.) Symbol Parameter Conditions Min Typ Max Unit V OS Input Offset Voltage mv I B Input Bias Current. pa I OS Input Offset Current. pa V CM Input Common-mode Voltage Range V CMRR Common-mode Rejection Ratio V CM = -.2V to 2.V db G V Large Signal Voltage Gain = kω to /2, =.2V to.6v 9 2 db ΔV OS/ΔT Input Offset Voltage Drift 2. μv/ C V OL/V OH Output Voltage Swing from Rail = kω to /2 25 = kω to /2 3 5 mv I SINK Sink = 2 6 Output Current I SOURCE Source = V 4 ma Z OUT Closed-loop Output Impedance f = khz 9 Ω PSRR Power Supply Rejection Ratio =.6V to 5.V 66 8 db I CC Supply Current (Per Amplifier) = /2, I OUT = 9 μa.8v AC Electrical Characteristics ( =.8V, V EE =, = /2, V CM = /2, = +25 C, unless otherwise noted.) Symbol Parameter Conditions Min Typ Max Unit GBP Gain Bandwidth Product = kω. MHz SR Slew Rate (Note 5) V Step, = pf, = kω.34 V/μs φ M Phase Margin = kω 67 Degrees THD+N Total Harmonic Distortion+Noise f = khz, A V =, = V pp = kω, = pf - db e n Voltage Noise Density f = khz 27 nv / Hz Note 5: Number specified is the positive slew rate. 5 of 24 March 7

6 Electrical Characteristics (Cont.) 3.V DC Electrical Characteristics ( = 3.V, V EE =, = /2, V CM = /2, = +25 C, unless otherwise noted.) Symbol Parameter Conditions Min Typ Max Unit V OS Input Offset Voltage mv I B Input Bias Current. pa I OS Input Offset Current. pa V CM Input Common-mode Voltage Range V CMRR Common-mode Rejection Ratio V CM = -.3V to.8v 62 8 V CM = -.3V to 3.3V db G V Large Signal Voltage Gain = kω to /2, =.2V to 2.8V = kω to /2, =.V to 2.9V db ΔV OS/ΔT Input Offset Voltage Drift 2. μv/ C V OL/V OH Output Voltage Swing from Rail = kω to /2 = kω to /2 3 5 mv I SINK Sink = Output Current I SOURCE Source = V 65 ma Z OUT Closed-loop Output Impedance f = khz 9 Ω PSRR Power Supply Rejection Ratio =.6V to 5.V 66 8 db I CC Supply Current (Per Amplifier) = /2, I OUT = 9 μa 3.V AC Electrical Characteristics ( = 3.V, V EE =, = /2, V CM = /2, = +25 C, unless otherwise noted.) Symbol Parameter Conditions Min Typ Max Unit GBP Gain Bandwidth Product = kω. MHz SR Slew Rate (Note 5) G =, 2V Step, = pf, = kω. V/μs φ M Phase Margin = kω 67 Degrees THD+N Total Harmonic Distortion+Noise f = khz, G =, = V pp = kω, = pf - db e n Voltage Noise Density f = khz 27 nv / Hz Note 5: Number specified is the positive slew rate. 6 of 24 March 7

7 Electrical Characteristics (Cont.) 5.V DC Electrical Characteristics ( = 5.V, V EE =, = /2, V CM = /2, = +25 C, unless otherwise noted.) Symbol Parameter Conditions Min Typ Max Unit V OS Input Offset Voltage mv I B Input Bias Current. pa I OS Input Offset Current. pa V CM Input Common-mode Voltage Range V CMRR Common-mode Rejection Ratio V CM = -.3V to 3.8V 85 V CM = -.3V to 5.3V 65 9 db G V Large Signal Voltage Gain = kω to /2, =.2V to 4.8V = kω to /2, =.5V to 4.95V db ΔV OS/ΔT Input Offset Voltage Drift 2. μv/ C V OL/V OH Output Voltage Swing from Rail = kω to /2 25 = kω to /2 4 5 mv I SINK Sink = Output Current I SOURCE Source = V 85 ma Closed-loop Output Impedance f = khz, A V = 9 Ω PSRR Power Supply Rejection Ratio =.6V to 5.V 66 8 db I CC Supply Current (Per Amplifier) = /2, I OUT = 9 μa 5.V AC Electrical Characteristics ( = 5.V, V EE =, = /2, V CM = /2, = +25 C, unless otherwise noted.) Symbol Parameter Conditions Min Typ Max Unit GBP Gain Bandwidth Product = kω. MHz SR Slew Rate (Note 5) 2V Step, = pf, = kω.45 V/μs φ M Phase Margin = kω 67 Degrees THD+N THD+N f = khz, A V =, = V PP = kω, = pf - db e n Voltage Noise Density f = khz 27 nv / Hz Note 5: Number specified is the positive slew rate. 7 of 24 March 7

8 Input Offset Voltage (mv) Input Offset Voltage (mv) Input Offset Voltage (mv) Input Offset Voltage (mv) NEW PRODUCT Supply Current ( A) Supply Current ( A) Performance Characteristics Supply Current vs. Temperature Supply Current vs. Supply Voltage No Load =/2 Dual Amplifiers =85 O C 8 =.8V =.6V Temperature ( O C) =5.V =3.V =25 O C =- O C Dual Amplifiers = /2 I OUT =ma Supply Voltage (V) Input Offset Voltage vs. Input Common Mode Voltage Input Offset Voltage vs. Input Common Mode Voltage =.6V =.8V =- o C =25 o C =85 o C Input Common Mode Voltage (V) Input Common Mode Voltage (V) =- o C =25 o C =85 o C Input Offset Voltage vs. Input Common Mode Voltage Input Offset Voltage vs. Input Common Mode Voltage =3.V 4 2 =5.V =- o C =25 o C =85 o C Input Common Mode Voltage (V) -4-6 =- o C =25 o C =85 o C Input Common Mode Voltage (V) 8 of 24 March 7

9 Output Short Circuit Current (Sink) (ma) Output Short Circuit Current (Source) (ma) Output Voltage to Supply Rail (mv) Output Voltage to Supply Rail (mv) NEW PRODUCT Output Voltage to Supply Rail (mv) Output Voltage to Supply Rail (mv) Performance Characteristics (Cont.) Output Voltage vs. Output Current Output Voltage vs. Output Current =.6V, V EE =V =.8V, V EE =V Sink Current Source Current Sink Current Source Current. Output Current (ma). Output Current (ma) Output Voltage vs. Output Current Output Voltage vs. Output Current =3.V, V EE =V =5.V, V EE =V Sink Current Source Current Sink Current Source Current.. Output Current (ma).. Output Current (ma) Output Short Circuit Current vs. Temperature Output Short Circuit Current vs. Temperature V EE =V short to =.6V =.8V =3.V =5.V 8 V EE =V short to V EE 8 8 =.6V =.8V =3.V =5.V Temperature ( o C) Temperature ( o C) 9 of 24 March 7

10 Output Voltage to Supply Rail (mv) Output Voltage to Supply Rail (mv) Output Voltage to Supply Rail (mv) Output Voltage to Supply Rail (mv) NEW PRODUCT Output Short Circuit Current (Sink) (ma) Output Short Circuit Current (Source) (ma) Performance Characteristics (Cont.) Output Short Circuit Current vs. Supply Voltage Output Short Circuit Current vs. Supply Voltage V EE =V short to V EE =V short to V EE Supply Voltage (V) Supply Voltage (V) Output Voltage Swing vs. Supply Voltage Output Voltage Swing vs. Supply Voltage =k Positive Swing Negative Swing =k Positive Swing Negative Swing Dual Supply Voltage (V) Dual Supply Voltage (V) Output Voltage Swing vs. Temperature Output Voltage Swing vs. Temperature Positive Swing =k =.8V,V EE =-.8V =2.5V,V EE =-2.5V =.8V,V EE =-.8V =2.5V,V EE =-2.5V =k Negative Swing =.9V,V EE =-.9V =.5V,V EE =-.5V =.9V,V EE =-.9V =.5V,V EE =-.5V Negative Swing 2 6 Positive Swing Temperature ( o C) Temperature ( o C) of 24 March 7

11 Open Loop Gain (db) Phase Margin (Degree) Open Loop Gain (db) Phase Margin (Degree) Open Loop Gain (db) Phase Margin (Degree) Open Loop Gain (db) Phase Margin (Degree) NEW PRODUCT Open Loop Gain (db) Phase Margin (Degree) Open Loop Gain (db) Phase Margin (Degree) Performance Characteristics (Cont.) Gain and Phase vs. Frequency with Resistive Load Gain and Phase vs. Frequency with Capacitive Load =k =k =k =8 =.8V, V EE =-.8V - =pf =pf =pf =.8V, V EE =-.8V =k - k k M - k k M Gain and Phase vs. Frequency with Capacitive Load Gain and Phase vs. Frequency with Resistive Load =pf =pf =pf =.8V, V EE =-.8V =k - =k =k =k =8 =.9V, V EE =-.9V - k k M - k k M Gain and Phase vs. Frequency with Capacitive Load Gain and Phase vs. Frequency with Capacitive Load =pf =pf =pf =.9V, V EE =-.9V =k - =pf =pf =pf =.9V, V EE =-.9V =k - k k M - k k M of 24 March 7

12 Open Loop Gain (db) Phase Margin (Degree) Open Loop Gain (db) Phase Margin (Degree) Open Loop Gain (db) Phase Margin (Degree) Open Loop Gain (db) Phase Margin (Degree) NEW PRODUCT Open Loop Gain (db) Phase Margin (Degree) Open Loop Gain (db) Phase Margin (Degree) Performance Characteristics (Cont.) Gain and Phase vs. Frequency with Resistive Load Gain and Phase vs. Frequency with Capacitive Load =k =k =k =8 =.5V, V EE =-.5V - =pf =pf =pf =.5V, V EE =-.5V =k - k k M - k k M Gain and Phase vs. Frequency with Capacitive Load Gain and Phase vs. Frequency with Resistive Load =pf =pf =pf =.5V, V EE =-.5V =k - =k =k =k =8 =2.5V, V EE =-2.5V - k k M - k k M Gain and Phase vs. Frequency with Capacitive Load Gain and Phase vs. Frequency with Capacitive Load =pf =pf =pf =2.5V, V EE =-2.5V =k - =pf =pf =pf =2.5V, V EE =-2.5V =k - k k M - k k M 2 of 24 March 7

THD+N (%) Input Voltage Noise (V/ Hz) NEW PRODUCT Output Impedance ( ) THD+N (%) Performance Characteristics (Cont.) Output Impedance vs. Frequency THD+N vs. Output Voltage =.

13 THD+N (%) Input Voltage Noise (V/ Hz) NEW PRODUCT Output Impedance ( ) THD+N (%) Performance Characteristics (Cont.) Output Impedance vs. Frequency THD+N vs. Output Voltage =.6V to 5V V EE =V A V =, =k, =pf =.8V,V EE =-.8V =.9V,V EE =-.9V =.5V,V EE =-.5V =2.5V,V EE =-2.5V. k k k A V = A V = A V =. E-3.. Output Voltage (V) THD+N vs. Frequency Input Voltage Noise Density. Bandwidth<Hz to 22kHz =.8V, V EE =-.8V =.9V, V EE =-.9V =.5V, V EE =-.5V =2.5V, V EE =-2.5V n =5.V, V EE =V, A V =. E-3 =mv RMS, A V =, =k, =pf k k n k k Small Signal Pulse Response Small Signal Pulse Response mv/div =.6V V EE=V mv/div =.8V V EE=V mv/div mv/div =pf, =kω, A V= =pf, =kω, A V= Time (2µs/div) Time (2µs/div) 3 of 24 March 7

14 Performance Characteristics (Cont.) Small Signal Pulse Response Small Signal Pulse Response mv/div =3.V V EE=V mv/div =5.V V EE=V mv/div mv/div =pf, =kω, A V= =pf, =kω, A V= Time (2µs/div) Time (2µs/div) Large Signal Pulse Response Large Signal Pulse Response mv/div =.6V V EE=V mv/div =.8V V EE=V mv/div mv/div =pf, =kω, A V= =pf, =kω, A V= Time (µs/div) Time (µs/div) Large Signal Pulse Response Large Signal Pulse Response V/div =3.V V EE=V 2V/div =5.V V EE=V V/div =pf, =kω, A V= 2V/div =pf, =kω, A V= Time (µs/div) Time (µs/div) 4 of 24 March 7

15 Performance Characteristics (Cont.) Large Signal Pulse Response Large Signal Pulse Response mv/div =.6V V EE=V mv/div =.8V V EE=V mv/div =pf, =kω, A V= mv/div =pf, =kω, A V= Time (µs/div) Time (µs/div) Large Signal Pulse Response Large Signal Pulse Response V/div =3.V V EE=V 2V/div =5.V V EE=V V/div 2V/div =pf, =kω, A V= =pf, =kω, A V= Time (µs/div) Time (µs/div) No Phase Reversal Overload Recovery Time V/div =2.5V V EE=-2.5V mv/div =2.5V V EE=-2.5V V/div f=khz, =kω, =6V PP, A V= V/div =pf, =kω, A V=- = to -mv Time (µs/div) Time (µs/div) 5 of 24 March 7

16 Performance Characteristics (Cont.) Overload Recovery Time mv/div =2.5V V EE=-2.5V V/div =pf, =kω, A V =-, = to -mv, Time (µs/div) 6 of 24 March 7

17 Ordering Information X X - X Product Name Package Packing RoHS/Green K : SOT-23-5 (AZV83) M : SOIC-8 (AZV832) MM : MSOP-8 (AZV832) TR : Tape & Reel G : Green Package Temperature Range Part Number Marking ID Packing SOT to +85 C AZV83KTR-G G4D /7 Tape & Reel SOIC-8 - to +85 C AZV832MTR-G 832M-G /3 Tape & Reel MSOP-8 - to +85 C AZV832MMTR-G 832MM-G /3 Tape & Reel Marking Information () SOT-23-5 XXX : Logo XXX: Marking ID (See Ordering Information) (2) SOIC-8 832M-G YWWAXX First Lines: Logo and Marking ID (See Ordering Information) Second Line: Date Code Y: Year WW: Work Week of Molding A: Assembly House Code XX: 7 th and 8 th Digits of Batch Number (3) MSOP-8 832MM-G YWWAXX First Lines: Logo and Marking ID (See Ordering Information) Second Line: Date Code Y: Year WW: Work Week of Molding A: Assembly House Code XX: 7 th and 8 th Digits of Batch Number 7 of 24 March 7

18 Package Outline Dimensions (All dimensions in mm(inch).) () Package Type: SOT (.) 3.(.22).(.4).(.8) 2.6(.4) 3.(.8).(.59).(.67).(.2).(.24).(.8).(.28) REF.9(.37) TYP.8(.7) 2.(.79).(.2).(.) 8.4(.57) MAX.(.).(.6).9(.35).(.5) 8 of 24 March 7

19 Package Outline Dimensions (Cont. All dimensions in mm(inch).) (2) Package Type: SOIC (.85) 5.(. ) ~ 9.3(. 53).7(. 69).3(. 3) TYP 8.(. 39) TYP Option ~ 9 7.2(. ) TYP.(. 4).(. 2) R.(.6) 3.8(. ) 4.(. 57).(. 24).725(. 29) D 8 D : 5.8(. 228) 6.(. 244) 8 Option.(. 2).5(. ).(. 6).2(. ) 7.4(. 7).8(. 32) R.(.6) Option 2.3(. 4) TYP Note: Eject hole, oriented hole and mold mark is optional. 9 of 24 March 7

20 Package Outline Dimensions (Cont. All dimensions in mm(inch).) (3) Package Type: MSOP-8.(.2)TYP.6(.26)TYP.(.6)TYP 4.(.85) 5.(.).(.6).8(.3) 2.9(.4) 3.(.22) 8.7(.).9(.38) 2.9(.4) 3.(.22).(.).(.8).8(.3).(.47) ` Note: Eject hole, oriented hole and mold mark is optional. of 24 March 7

21 Suggested Pad Layout () Package Type: SOT-23-5 E2 G Z E Y X Dimensions Z G X Y E E2 Value 3./.42./.63./.28./.39.9/.37.9/.75 2 of 24 March 7

22 Suggested Pad Layout (Cont.) (2) Package Type: SOIC-8 Grid placement courtyard G Z Y E X Dimensions Z G X Y E Value 6.9/ /.54.6/.26./.59.2/. 22 of 24 March 7

23 Suggested Pad Layout (Cont.) (3) Package Type: MSOP-8 E X G Z Y Dimensions Z G X Y E Value 5./ /..4/.8.3/.53.6/ of 24 March 7

24 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which:. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright 7, Diodes Incorporated 24 of 24 March 7

AP4310A. Pin Assignments. Description. Features. Applications. Typical Applications Circuit. A Product Line of. Diodes Incorporated

AP4310A. Pin Assignments. Description. Features. Applications. Typical Applications Circuit. A Product Line of. Diodes Incorporated DUAL OP AMP AND VOLTAGE REFERENCE Description The is a monolithic IC specifically designed to regulate the output current and voltage levels of switching battery chargers and power supplies Pin Assignments