SGM8551XN Single-Supply, Single Rail-to-Rail I/O Precision Operational Amplifier

Transcription

1 PRODUCT DESCRIPTION The SGM8551XN is a single rail-to-rail input and output precision operational amplifier which has low input offset voltage, and bias current. It is guaranteed to operate from 2.5V to 5.5V single supply. The rail-to-rail input and output swings provided by the SGM8551XN make both high-side and low-side sensing easy. The combination of characteristics makes the SGM8551XN good choices for temperature, position and pressure sensors, medical equipment and strain gauge amplifiers, or any other 2.5V to 5.5V application requiring precision and long term stability. FEATURES Low Offset Voltage: 12µV (TYP) at +5V Rail-to-Rail Input and Output Swing 2.5V to 5.5V Single Supply Operation Voltage Gain: 145 (TYP) at +5V PSRR: 11 (TYP) CMRR: 15 (TYP) Ultra Low Input Bias Current: 19pA Low Supply Current: 465µA (TYP) Overload Recovery Time:.1ms (at V S = +5V) No External Capacitors Required -4 to +125 Operating Temperature Range Available in Green SOT-23-5 Package The SGM8551XN is specified for the extended industrial/ automotive (-4 to +125 ) temperature range. It is available in the Green SOT-23-5 package. PIN CONFIGURATION (Top View) APPLICATIONS Temperature Measurements Pressure Sensors Precision Current Sensing Electronic Scales Strain Gauge Amplifiers Medical Instrumentation Thermocouple Amplifiers Handheld Test Equipment OUT -V S +IN SGM8551XN V S -IN SOT-23-5 REV. A. 3

2 PACKAGE/ORDERING INFORMATION MODEL ORDER NUMBER PACKAGE DESCRIPTION PACKAGE OPTION MARKING INFORMATION SGM8551XN SGM8551XN5G/TR SOT-23-5 Tape and Reel, 3 S6XX NOTE: Package marking is defined as the follow: MARKING INFORMATION S6 X X Date code - month ("A" = Jan. "B" = Feb. "L" = Dec.) Date code - year ("9" = 29, "A" = 21 ) Chip I.D. For example: S69A (29, January) ABSOLUTE MAXIMUM RATINGS Supply Voltage V Input Voltage V S to (+V S) +.1V Differential Input Voltage V to 5V Storage Temperature Range to +15 Junction Temperature Operating Temperature Range to +125 Lead Temperature Range (Soldering 1 sec) ESD Susceptibility HBM V MM V NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. CAUTION This integrated circuit can be damaged by ESD if you don t pay attention to ESD protection. SGMICRO recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. SGMICRO reserves the right to make any change in circuit design, specification or other related things if necessary without notice at any time. Please contact SGMICRO sales office to get the latest datasheet. 2

3 ELECTRICAL CHARACTERISTICS (V S = +5V, V CM = +2.5V, V O = +2.5V, T A = +25, unless otherwise noted.) PARAMETER CONDITIONS MIN TYP MAX UNITS INPUT CHARACTERISTICS Input Offset Voltage (V OS) T A Input Bias Current (I B) 19 pa Input Offset Current (I OS) 3 pa Input Voltage Range 5 V Common-Mode Rejection Ratio (1) (CMRR) Large Signal Voltage Gain (A VO) V CM = V to 5V T A R L = 1kΩ, V O =.3V to 4.7V T A Input Offset Voltage Drift ( V OS/ T) -4 T A nv/ OUTPUT CHARACTERISTICS Output Voltage High (V OH) Output Voltage Low (V OL) Short Circuit Limit (I SC) POWER SUPPLY Power Supply Rejection Ratio (1) (PSRR) Quiescent Current (I Q) DYNAMIC PERFORMANCE R L = 1kΩ to -V S T A R L = 1kΩ to -V S T A R L = 1kΩ to +V S T A R L = 1kΩ to +V S T A V O = 2.5V, R L =1Ω to GND 4-4 T A V S = 2.5V to 5.5V T A V O = +V S/ T A Gain-Bandwidth Product (GBP) 1. MHz Slew Rate (SR), R L = 1kΩ, 2V Output Step.84 V/µs Overload Recovery Time A V = -1, R L = 1kΩ, V IN = 2mV (RET to GND).1 ms NOISE PERFORMANCE Voltage Noise (e n p-p).1hz to 1Hz.9 µv P-P Voltage Noise Density (e n) f = 1kHz 53 nv/ Hz µv V V mv mv ma µa NOTE 1: PSRR and CMRR are affected by the matching between external gain-setting resistor ratios. 3

4 ELECTRICAL CHARACTERISTICS (V S = +2.5V, V CM = +1.25V, V O = +1.25V, T A = +25, unless otherwise noted.) PARAMETER CONDITIONS MIN TYP MAX UNITS INPUT CHARACTERISTICS Input Offset Voltage (V OS) T A Input Bias Current (I B) 13 pa Input Offset Current (I OS) 5 pa Input Voltage Range 2.5 V Common-Mode Rejection Ratio (1) (CMRR) Large Signal Voltage Gain (A VO) V CM = V to 2.5V T A R L = 1kΩ, V O =.3V to 2.4V T A Input Offset Voltage Drift ( V OS/ T) -4 T A nv/ OUTPUT CHARACTERISTICS Output Voltage High (V OH) Output Voltage Low (V OL) Short Circuit Limit (I SC) POWER SUPPLY Power Supply Rejection Ratio (1) (PSRR) Quiescent Current (I Q) DYNAMIC PERFORMANCE R L = 1kΩ to -V S T A R L = 1kΩ to -V S T A R L = 1kΩ to +V S T A R L = 1kΩ to +V S T A V O = 1.25V, R L =1Ω to GND T A V S = 2.5V to 5.5V T A V O = +V S/ T A Gain-Bandwidth Product (GBP) 1.46 MHz Slew Rate (SR), R L = 1kΩ, 2V Output Step.83 V/µs Overload Recovery Time A V = -1, R L = 1kΩ, V IN = 2mV (RET to GND).86 ms NOISE PERFORMANCE Voltage Noise (e n p-p).1hz to 1Hz.9 µv P-P Voltage Noise Density (e n) f = 1kHz 55 nv/ Hz µv V V mv mv ma µa NOTE 1: PSRR and CMRR are affected by the matching between external gain-setting resistor ratios. 4

5 TYPICAL PERFORMANCE CHARACTERISTICS Large Signal Transient Response at +5V Large Signal Transient Response at +2.5V V OUT (1V/div) C L = 3pF R L = 2kΩ V OUT (5mV/div) C L = 3pF R L = 2kΩ Time (5µs/div) Time (2µs/div) Small Signal Transient Response at +5V Small Signal Transient Response at +2.5V V OUT (5mV/div) C L = 5pF R L = V OUT (5mV/div) C L = 5pF R L = Time (5µs/div) Time (5µs/div) Closed Loop Gain () Closed Loop Gain vs. Frequency at +5V 6 5 A 4 V = A V = Closed Loop Gain () Closed Loop Gain vs. Frequency at +2.5V A V = A V =

6 TYPICAL PERFORMANCE CHARACTERISTICS Positive Overvoltage Recovery Negative Overvoltage Recovery V V IN V OUT V V SY = ±2.5V V IN = -2mV P-P (RET to GND) C L = pf R L = 1kΩ A V = -1 2mV /div 1V /div V IN V V V SY = ±2.5V V IN = +2mV P-P (RET to GND) C L = pf R L = 1kΩ A V = -1 2mV /div 1V /div V OUT Time (2µs/div) Time (5µs/div) Open Loop Gain () Open Loop Gain, Phase Shift vs. Frequency at +5V Phase Shift Open Loop Gain C L = pf R L = Phase Shift (Degrees) Open Loop Gain () Open Loop Gain, Phase Shift vs. Frequency at +2.5V Phase Shift Open Loop Gain C L = pf R L = Phase Shift (Degrees).1Hz to 1Hz Noise at +5V.1Hz to 1Hz Noise at +2.5V Noise (2mV/div) Noise (2mV/div),, Time (1s/div) Time (1s/div) 6

7 TYPICAL PERFORMANCE CHARACTERISTICS e n (nv/ Hz) Voltage Noise Density at +5V from.1hz to 2.5kHz R S = Ω e n (nv/ Hz) Voltage Noise Density at +2.5V from.1hz to 2.5kHz R S = Ω Voltage Noise Density at +5V from.1hz to 25kHz 128 Voltage Noise Density at +2.5V from.1hz to 25kHz e n (nv/ Hz) 8 64 e n (nv/ Hz) R S = Ω 16 R S = Ω Percent of Amplifiers (%) Offset Voltage Production Distribution at +5V V S = +5V V CM = 2.5V T A = +25 Percent of Amplifiers (%) Offset Voltage Production Distribution at +2.5V V S = +2.5V V CM = 1.25V T A = Offset Voltage (µv) Offset Voltage (µv) 7

8 TYPICAL PERFORMANCE CHARACTERISTICS 1 CMRR vs. Frequency at +5V 1 CMRR vs. Frequency at +2.5V 8 8 CMRR () 6 4 CMRR ()

9 PACKAGE OUTLINE DIMENSIONS SOT-23-5 D 1.9 e1 E1 E b e RECOMMENDED LAND PATTERN (Unit: mm) L A A1 A2 θ.2 c Symbol Dimensions In Millimeters Dimensions In Inches MIN MAX MIN MAX A A A b c D E E e.95 BSC.37 BSC e1 1.9 BSC.75 BSC L θ 8 8 9