Micropower Precision CMOS Operational Amplifier AD8500
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1 Micropower Precision CMOS Operational Amplifier AD85 FEATURES Supply current: μa maximum Offset voltage: mv maximum Single-supply or dual-supply operation Rail-to-rail input and output No phase reversal Unity gain stable PIN CONFIGURATION OUT A V 2 +IN 3 AD85 TOP VIEW (Not to Scale) Figure. 5-Lead SC7 5 V+ IN 65- APPLICATIONS Portable equipment Remote sensors Low power filters Threshold detectors Current sensing GENERAL DESCRIPTION The AD85 is a low power, precision CMOS op amp featuring a maximum supply current of μa. The AD85 has a maximum offset voltage of mv and a typical input bias current of pa; it operates rail-to-rail on both the input and output. The AD85 can operate from a single-supply voltage of +.8 V to +5.5 V or a dual-supply voltage of ±.9 V to ±2.75 V. With its low power consumption, low input bias current, and rail-to-rail input and output, the AD85 is ideally suited for a variety of battery-powered portable applications. Potential applications include ECGs, pulse monitors, glucose meters, smoke and fire detectors, vibration monitors, and backup battery sensors. The ability to swing rail-to-rail at both the input and output helps maximize dynamic range and signal-to-noise ratio in systems that operate at very low voltages. The low offset voltage allows the AD85 to be used in systems with high gain without having excessively large output offset errors, and it provides high accuracy without the need for system calibration. The AD85 is fully specified over the industrial temperature range ( C to +85 C) and is operational over the extended industrial temperature range ( C to +25 C). It is available in a 5-lead, SC7 surface-mount package. Table. Low Supply Current Op Amps Supply Current μa μa 2 μa Single AD85 Dual AD852 ADA55-2 AD856 Quad AD85 ADA55- AD858 Rev. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 96, Norwood, MA , U.S.A. Tel: Fax: Analog Devices, Inc. All rights reserved.
2 AD85 TABLE OF CONTENTS Features... Applications... General Description... Pin Configuration... Revision History... 2 Specifications... 3 Electrical Characteristics... 3 Absolute Maximum Ratings...5 Thermal Resistance...5 ESD Caution...5 Typical Performance Characteristics...6 Outline Dimensions... 2 Ordering Guide... 2 REVISION HISTORY 2/9 Rev. A to Rev. B Added Table ; Renumbered Sequentially... Changes to Typical Performance Characteristics Section /6 Rev. to Rev. A Updated Format... Universal Changes to Figure 7, Figure 8, and Figure /6 Revision : Initial Version Rev. B Page 2 of 2
3 AD85 SPECIFICATIONS ELECTRICAL VS = 5 V, VCM = VS/2, TA = 25 C, unless otherwise noted. Table 2. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS V < VCM < 5 V.235 mv Offset Voltage Drift VOS/ T C < TA < +85 C 3 μv/ C Input Voltage Range V Input Bias Current IB pa C < TA < +85 C pa C < TA < +25 C 6 pa Input Offset Current IOS.5 5 pa C < TA < +85 C 5 pa C < TA < +25 C pa Common-Mode Rejection Ratio CMRR V < VCM < 5 V 75 9 db C < TA < +85 C 7 9 db Large Signal Voltage Gain AVO. V < VOUT <.9 V 98 2 db. V < VOUT <.9 V; C < TA < +85 C 8 db Input Capacitance CDIFF 2 pf CCM.5 pf OUTPUT CHARACTERISTICS Output Voltage High VOH RLOAD = kω to GND V RLOAD = kω to GND.9.96 V Output Voltage Low VOL RLOAD = kω to VS.85 5 mv RLOAD = kω to VS mv Short-Circuit Current ISC VOUT = GND ±5 ma POWER SUPPLY Power Supply Rejection Ratio PSRR.8 V < VS < 5 V 9 db C < TA < +85 C 8 db Supply Current/Amplifier ISY VO = VS/2.75 μa C < TA < +85 C.5 μa C < TA < +25 C 2 μa DYNAMIC PERFORMANCE Slew Rate SR. V/μs Gain Bandwidth Product GBP 7 khz Phase Margin ØO 6 Degrees NOISE PERFORMANCE Peak-to-Peak Noise. Hz to Hz 6 μv p-p Voltage Noise Density en f = khz 9 nv/ Hz Current Noise Density in f = khz. pa/ Hz Rev. B Page 3 of 2
4 VS =.8 V, VCM = VS/2, TA = 25 C, unless otherwise noted. Table 3. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS V < VCM <.8 V.235 mv Offset Voltage Drift VOS/ T C < TA < +85 C μv/ C Input Voltage Range V Input Bias Current IB pa C < TA < +85 C pa C < TA < +25 C 6 pa Input Offset Current IOS.5 5 pa C < TA < +85 C 5 pa C < TA < +25 C pa Common-Mode Rejection Ratio CMRR V < VCM <.8 V db C < TA < +85 C 6 83 db Large Signal Voltage Gain AVO. V < VOUT <.7 V 88 5 db. V < VOUT <.7 V; C < TA < +85 C 7 db Input Capacitance CDIFF 2 pf CCM.5 pf OUTPUT CHARACTERISTICS Output Voltage High VOH RLOAD = kω to GND V RLOAD = kω to GND V Output Voltage Low VOL RLOAD = kω to VS.7 5 mv RLOAD = kω to VS 5 5 mv Short-Circuit Current ISC ±2 ma POWER SUPPLY Power Supply Rejection Ratio PSRR.8 V < VS < 5 V 9 db C < TA < +85 C 8 db Supply Current/Amplifier ISY VO = VS/2.65 μa C < TA < +85 C.5 μa C < TA < +25 C 2 μa DYNAMIC PERFORMANCE Slew Rate SR. V/μs Gain Bandwidth Product GBP 7 khz Phase Margin ØO 6 Degrees NOISE PERFORMANCE Peak-to-Peak Noise. Hz to Hz 6 μv p-p Voltage Noise Density en f = khz 9 nv/ Hz Current Noise Density in f = khz. pa/ Hz Rev. B Page of 2
5 AD85 ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted. Table. Parameter Rating Supply Voltage 6 V Input Voltage VSS. V to VDD +. V Differential Input Voltage ±6 V Output Short-Circuit Duration to GND Indefinite Storage Temperature Range 65 C to +5 C Operating Temperature Range C to +25 C Junction Temperature Range 65 C to +5 C Lead Temperature (Soldering, 6 sec) 3 C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Absolute maximum ratings apply at 25 C, unless otherwise noted. THERMAL RESISTANCE θja is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages. Table 5. Thermal Characteristics Package Type θja θjc Unit 5-Lead SC7 (KS-5) C/W ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Rev. B Page 5 of 2
6 AD85 TYPICAL PERFORMANCE CHARACTERISTICS TA = 25 C, unless otherwise noted. 2 V < V CM < 5V AND.8V NUMBER OF AMPLIFIERS 8 6 INPUT BIAS CURRENT (pa) V OS (µv) Figure 2. Input Offset Voltage Distribution TEMPERATURE ( C) Figure 5. Input Bias Current vs. Temperature C < T A < +85 C I B (+25 C) NUMBER OF AMPLIFIERS 8 6 INPUT BIAS CURRENT (pa). I B (+85 C) I B (+25 C) 2. I B ( C) TCV OS (µv/ C) Figure 3. Input Offset Voltage Drift Distribution V CM (V) Figure 6. Input Bias Current vs. Common-Mode Voltage V OS (µv) 2 2 NUMBER OF AMPLIFIERS V CM (V) SUPPLY CURRENT (µa) 65-7 Figure. Input Offset Voltage vs. Common-Mode Voltage Figure 7. Supply Current Distribution Rev. B Page 6 of 2
7 AD85 I SY (µa) OUTPUT SATURATION VOLTAGE (mv). SOURCE SINK V S (V) LOAD CURRENT (ma) 65- Figure 8. Supply Current vs. Supply Voltage Figure. Output Saturation Voltage vs. Load Current.2 I SY (µa) I SY AT 5.V I SY AT.8V OUTPUT SATURATION VOLTAGE (mv) V kω LOAD V kω LOAD V kω LOAD V kω LOAD TEMPERATURE ( C) Figure 9. Supply Current vs. Temperature TEMPERATURE ( C) Figure 2. Output Saturation Voltage vs. Temperature PHASE 2 9 I SY (na) OPEN-LOOP GAIN (db) 2 2 GAIN PHASE MARGIN (Degrees) V CM (V) Figure. Supply Current vs. Input Common-Mode Voltage k k k FREQUENCY (Hz) Figure 3. Open-Loop Gain and Phase vs. Frequency 65-3 Rev. B Page 7 of 2
8 AD NO LOAD 9. CMRR (db) FREQUENCY (khz) Figure. CMRR vs. Frequency Figure 7. Small Signal Transient Response C L = pf 8 7. PSRR (db) FREQUENCY (khz) Figure 5. PSRR vs. Frequency Figure 8. Small Signal Transient Response NO LOAD OVERSHOOT (%) OS+ OS LOAD CAPACITANCE (pf) Figure 6. Small Signal Overshoot vs. Load Capacitance Figure 9. Large Signal Transient Response 65-9 Rev. B Page 8 of 2
9 AD85 AND.8V V S VOLTAGE (2V/DIV) V OUT GAIN = + V IN = V S/2 VOLTAGE NOISE DENSITY (nv/ Hz) TIME (µs/div) Figure 2. Turn-On Transient Response 65-2 k k FREQUENCY (Hz) Figure 23. Voltage Noise Density V OUT V IN NUMBER OF AMPLIFIERS V < V CM <.8V TIME (s) Figure 2. No Phase Reversal V OS (µv) Figure 2. Input Offset Voltage Distribution 65-2 PEAK-TO-PEAK VOLTAGE (µv) AND.8V NUMBER OF AMPLIFIERS C < T A < +85 C Figure 22.. Hz to Hz Input Voltage Noise TCV OS (µv/ C) Figure 25. Input Offset Voltage Drift Distribution Rev. B Page 9 of 2
10 AD V OS (µv) 2 2 I SY (na) V CM (V) Figure 26. Input Offset Voltage vs. Input Common-Mode Voltage V CM (V) Figure 29. Supply Current vs. Input Common-Mode Voltage I B (+25 C) I B (pa).. I B (+25 C) I B (+85 C) OUTPUT SATURATION VOLTAGE (mv). SOURCE SINK I B ( C) V CM (V) Figure 27. Input Bias Current vs. Input Common-Mode Voltage LOAD CURRENT (ma) Figure 3. Output Saturation Voltage vs. Load Current NUMBER OF AMPLIFIERS OUTPUT SATURATION VOLTAGE (mv) V kω LOAD V kω LOAD V kω LOAD V kω LOAD SUPPLY CURRENT (µa) Figure 28. Supply Current Distribution TEMPERATURE ( C) Figure 3. Output Saturation Voltage vs. Temperature 65-3 Rev. B Page of 2
11 AD PHASE NO LOAD OPEN-LOOP GAIN (db) 2 2 GAIN PHASE MARGIN (Degrees) k k k FREQUENCY (Hz) Figure 32. Open-Loop Gain and Phase vs. Frequency Figure 35. Small Signal Transient Response C L = pf 8 7. CMRR (db) FREQUENCY (khz) Figure 33. CMRR vs. Frequency Figure 36. Small Signal Transient Response OS NO LOAD OVERSHOOT (%) 2 5 OS LOAD CAPACITANCE (pf) Figure 3. Small Signal Overshoot vs. Load Capacitance Figure 37. Large Signal Transient Response Rev. B Page of 2
12 AD85 OUTLINE DIMENSIONS PIN.65 BSC MAX.3.5. COPLANARITY SEATING PLANE COMPLIANT TO JEDEC STANDARDS MO-23-AA Figure Lead Thin Shrink Small Outline Transistor Package [SC7] (KS-5) Dimensions shown in millimeters ORDERING GUIDE Model Temperature Range Package Description Package Option Branding AD85AKSZ-R2 C to +25 C 5-Lead SC7 KS-5 AF AD85AKSZ-REEL C to +25 C 5-Lead SC7 KS-5 AF AD85AKSZ-REEL7 C to +25 C 5-Lead SC7 KS-5 AF Z = RoHS Compliant Part Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D65--2/9(B) Rev. B Page 2 of 2
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More informationTABLE OF CONTENTS AD8625/AD8626/AD8627 Specifications... 3 Electrical Characteristics... 3 Electrical Characteristics... 4 Absolute Maximum Ratings...
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FEATURES ±4 V human body model (HBM) ESD High common-mode voltage range V to +6 V operating 3 V to +68 V survival Buffered output voltage Wide operating temperature range 8-Lead SOIC: 4 C to + C Excellent
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a FEATURES Guaranteed V OS : 5 V Max Guaranteed Matched CMRR: 94 db Min Guaranteed Matched V OS : 75 V Max LM148/LM348 Direct Replacement Low Noise Silicon-Nitride Passivation Internal Frequency Compensation
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a FEATURES Excellent Noise Performance:. nv/ Hz or.5 db Noise Figure Ultra-low THD:
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PRODUCT DESCRIPTION The SGM8551XN is a single rail-to-rail input and output precision operational amplifier which has low input offset voltage, and bias current. It is guaranteed to operate from 2.5V to
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Enhanced Product Low Noise, Micropower 5.0 V Precision Voltage Reference FEATURES 6.0 V to 15 V supply range Supply current: 15 μa maximum Low noise: 15 μv p-p typical (0.1 Hz to 10 Hz) High output current:
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