Low Power, Precision, Auto-Zero Op Amps AD8538/AD8539 FEATURES Low offset voltage: 13 μv maximum Input offset drift: 0.03 μv/ C Single-supply operatio

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1 Low Power, Precision, Auto-Zero Op Amps FEATURES Low offset voltage: 3 μv maximum Input offset drift:.3 μv/ C Single-supply operation: 2.7 V to 5.5 V High gain, CMRR, and PSRR Low input bias current: 25 pa Low supply current: 8 μa APPLICATIONS Mobile communications Portable instrumentation Battery-powered devices Sensor interfaces Temperature measurement Electronic scales PIN CONFIGURATIONS OUT AD8538 V 2 TOP VIEW +IN 3 (Not to Scale) 5 4 V+ IN Figure. 5-Lead TSOT-23 (UJ-5) NC IN 2 +IN 3 V 4 AD8538 TOP VIEW (Not to Scale) NC 7 V+ 6 OUT 5 NC NC = NO CONNECT Figure 2. 8-Lead SOIC_N (R-8) 674- GENERAL DESCRIPTION OUT A 8 V+ IN A 2 7 OUT B The are very high precision amplifiers featuring +IN A 3 TOP VIEW 6 IN B extremely low offset voltage, low input bias current, and low power V 4 (Not to Scale) 5 +IN B consumption. The supply current is less than 25 μa maximujm per amplifier at 5. V. Operation is fully specified from 2.7 V to Figure 3. 8-Lead SOIC_N (R-8) 5. V single supply (±.35 V to ±2.5 V dual supply). The operate at very low power making these OUT A 8 V+ IN A 2 7 OUT B amplifiers ideal for battery-powered devices and portable +IN A 3 TOP VIEW 6 IN B equipment. (Not to Scale) V 4 5 +IN B The are specified over the extended industrial temperature range ( 4 C to +25 C). The AD8538 amplifier is Figure 4. 8-Lead MSOP (RM-8) available in 5-lead TSOT-23, and 8-lead, narrow body SOIC packages, and the amplifier is available in 8-lead, narrow body SOIC and 8-lead MSOP Rev. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 96, Norwood, MA , U.S.A. Tel: Fax: Analog Devices, Inc. All rights reserved.

2 TABLE OF CONTENTS Features... Applications... General Description... Pin Configurations... Revision History... 2 Specifications... 3 AD8538 Electrical Specifications... 3 Electrical Specifications... 5 Absolute Maximum Ratings...7 Thermal Resistance...7 ESD Caution...7 Typical Performance Characteristics...8 AD8538 Characteristics...8 Characteristics... 4 Outline Dimensions... 2 Ordering Guide... 2 REVISION HISTORY 5/7 Rev. to Rev. A Added...Universal Updated Outline Dimensions... 2 Changes to Specifications Section... 3 Changes to Ordering Guide... 2 Added Table 3, Renumbered Tables Sequentially... 5 Added Table 4, Renumbered Tables Sequentially... 6 /5 Revision : Initial Version Changes to Thermal Resistance Section... 7 Added Figure 32 and Figure Added Characteristics Section, Renumbered Figures Sequentially... 4 Rev. A Page 2 of 24

3 SPECIFICATIONS AD8538 ELECTRICAL VS = 5. V, VCM = 2.5 V, VO = 2.5 V, TA = 25 C, unless otherwise specified. Table. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS 5 3 μv 4 C TA +25 C 3 μv Input Bias Current IB 5 25 pa 4 C TA +85 C 35 pa 4 C TA +25 C.7. na Input Offset Current IOS 2 5 pa 4 C TA +25 C 5 pa Input Voltage Range 5 V Common-Mode Rejection Ratio CMRR VCM = V to 5 V 5 5 db 4 C TA +25 C, VCM =.2 V to 4.8 V 35 db Large Signal Voltage Gain AVO RL = kω, VO =. V to 4.9 V 5 4 db 4 C TA +25 C 35 db Offset Voltage Drift ΔVOS/ΔT 4 C TA +25 C.3. μv/ C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = kω to ground V 4 C TA +25 C, RL = kω to ground 4.98 V RL = kω to ground V 4 C TA +25 C, RL = kω to ground 4.94 V Output Voltage Low VOL RL = kω to V+.9 5 mv 4 C TA +25 C, RL = kω to V mv RL = kω to V+ 7 2 mv 4 C TA +25 C, RL = kω to V+ 2 3 mv Short-Circuit Limit ISC ±25 ma POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 5. V 5 25 db 4 C TA +25 C 25 db Supply Current/Amplifier ISY IO = 5 8 μa 4 C TA +25 C 9 25 μa DYNAMIC PERFORMANCE Slew Rate SR RL = kω.4 V/μs Settling Time.% ts G = ±, 2 V step, CL = 2 pf, RL = kω μs Overload Recovery Time.5 ms Gain Bandwidth Product GBP 43 khz Phase Margin ØM RL = kω, RL = kω, CL = 2 pf 65 Degrees NOISE PERFORMANCE Voltage Noise en p-p f =. Hz to Hz 2. μv p-p Voltage Noise Density en f = khz 5 nv/ Hz Rev. A Page 3 of 24

4 @ VS = 2.7 V, VCM =.35 V, VO =.35 V, TA = 25 C, unless otherwise specified. Table 2. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS 5 3 μv 4 C TA +25 C 3 μv Input Bias Current IB 5 25 pa 4 C TA +85 C 35 pa 4 C TA +25 C.7. na Input Offset Current IOS 2 5 pa 4 C TA +25 C 5 pa Input Voltage Range 2.7 V Common-Mode Rejection Ratio CMRR VCM = V to 2.5 V 4 db 4 C TA +25 C 35 db Large Signal Voltage Gain AVO RL = kω, VO =. V to.7 V 4 db 4 C TA +25 C 5 35 db Offset Voltage Drift ΔVOS/ΔT 4 C TA +25 C.3. μv/ C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = kω to ground V 4 C TA +25 C, RL = kω to ground 2.68 V RL = kω to ground V 4 C TA +25 C, RL = kω to ground 2.66 V Output Voltage Low VOL RL = kω to V+.7 5 mv 4 C TA +25 C, RL = kω to V mv RL = kω to V+ 4 2 mv 4 C TA +25 C, RL = kω to V mv Short-Circuit Limit ISC ±8 ma POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 5 25 db 4 C TA +25 C 25 db Supply Current/Amplifier ISY IO = 5 8 μa 4 C TA +25 C 9 25 μa DYNAMIC PERFORMANCE Slew Rate SR RL = kω.35 V/μs Settling Time.% ts G = ±, V step, CL = 2 pf, RL = kω 5 μs Overload Recovery Time.5 ms Gain Bandwidth Product GBP 43 khz Phase Margin ØM RL = kω, RL = kω, CL = 2 pf 65 Degrees NOISE PERFORMANCE Voltage Noise en p-p f =. Hz to Hz 2. μv p-p Voltage Noise Density en f = khz 5 nv/ Hz Rev. A Page 4 of 24

5 ELECTRICAL VS = 5. V, VCM = 2.5 V, VO = 2.5 V, TA = 25 C, unless otherwise specified. Table 3. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS 5 5 μv 4 C TA +25 C 3 μv Input Bias Current IB 5 6 pa 4 C TA +85 C pa 4 C TA +25 C.7. na Input Offset Current IOS 2 7 pa 4 C TA +25 C 4 pa Input Voltage Range 5 V 4 C TA +25 C V Common-Mode Rejection Ratio CMRR VCM = V to 5 V 5 35 db 4 C TA +25 C, VCM =.2 V to 4.8 V 3 db Large Signal Voltage Gain AVO RL = kω, VO =. V to 4.9 V 3 db 4 C TA +25 C 25 db Offset Voltage Drift ΔVOS/ΔT 4 C TA +25 C.3. μv/ C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = kω to ground V 4 C TA +25 C, RL = kω to ground 4.98 V RL = kω to ground V 4 C TA +25 C, RL = kω to ground 4.94 V Output Voltage Low VOL RL = kω to V+ 5 7 mv 4 C TA +25 C, RL = kω to V+ 6 8 mv RL = kω to V mv 4 C TA +25 C, RL = kω to V mv Short-Circuit Limit ISC ±25 ma POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 5. V 5 25 db 4 C TA +25 C 25 db Supply Current/Amplifier ISY IO = 7 2 μa 4 C TA +25 C 225 μa DYNAMIC PERFORMANCE Slew Rate SR RL = kω.4 V/μs Settling Time.% ts G = ±, 2 V step, CL = 2 pf, RL = kω μs Overload Recovery Time.5 ms Gain Bandwidth Product GBP 43 khz Phase Margin ØM RL = kω, RL = kω, CL = 2 pf 65 Degrees NOISE PERFORMANCE Voltage Noise en p-p f =. Hz to Hz.2 μv p-p Voltage Noise Density en f = khz 52 nv/ Hz Rev. A Page 5 of 24

6 @ VS = 2.7 V, VCM =.35 V, VO =.35 V, TA = 25 C, unless otherwise specified. Table 4. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS 5 6 μv 4 C TA +25 C 3 μv Input Bias Current IB 5 25 pa 4 C TA +85 C pa 4 C TA +25 C.7. na Input Offset Current IOS 2 5 pa 4 C TA +25 C 3 pa Input Voltage Range 2.7 V 4 C TA +25 C Common-Mode Rejection Ratio CMRR VCM = V to 2.7 V 3 db 4 C TA +25 C, VCM =.2 V to 2.5 V 25 db Large Signal Voltage Gain AVO RL = kω, VO =. V to 2.6 V 3 db 4 C TA +25 C 5 25 db Offset Voltage Drift ΔVOS/ΔT 4 C TA +25 C.3. μv/ C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = kω to ground V 4 C TA +25 C, RL = kω to ground 2.68 V RL = kω to ground V 4 C TA +25 C, RL = kω to ground 2.66 V Output Voltage Low VOL RL = kω to V+ 5 7 mv 4 C TA +25 C, RL = kω to V+ 6 8 mv RL = kω to V+ 4 2 mv 4 C TA +25 C, RL = kω to V mv Short-Circuit Limit ISC ±8 ma POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 5 25 db 4 C TA +25 C 25 db Supply Current/Amplifier ISY IO = 2 μa 4 C TA +25 C 225 μa DYNAMIC PERFORMANCE Slew Rate SR RL = kω.35 V/μs Settling Time.% ts G = ±, V step, CL = 2 pf, RL = 8 μs Overload Recovery Time.5 ms Gain Bandwidth Product GBP 43 khz Phase Margin ØM RL = kω, RL = kω, CL = 2 pf 65 Degrees NOISE PERFORMANCE Voltage Noise en p-p f =. Hz to Hz 2. μv p-p Voltage Noise Density en f = khz 55 nv/ Hz Rev. A Page 6 of 24

7 ABSOLUTE MAXIMUM RATINGS, unless otherwise noted. Table 5. Parameter Rating Supply Voltage +6 V Input Voltage V SS.3 V to V DD +.3 V Differential Input Voltage ±6 V Output Short-Circuit Duration to GND Observe derating curve Storage Temperature Range 65 C to +5 C Lead Temperature (Soldering, 6 sec) 3 C Operating Temperature Range 4 C to +25 C Junction Temperature Range 65 C to +5 C THERMAL RESISTANCE θja is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages. Table 6. Thermal Characteristics Package Type θja θjc Unit 5-Lead TSOT-23 (UJ-5) 27 6 C/W 8-Lead SOIC_N (R-8) C/W 8-Lead MSOP (RM-8) C/W ESD CAUTION Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Absolute maximum ratings apply at 25 C, unless otherwise noted. Rev. A Page 7 of 24

8 TYPICAL PERFORMANCE CHARACTERISTICS AD8538 CHARACTERISTICS AD8538 only, V SY = 5 V or ±2.5 V, unless otherwise noted V < V CM < 5V 7 6 AND 2.7V NUMBER OF AMPLIFIERS INPUT BIAS CURRENT (pa) INPUT OFFSET VOLTAGE (µv) Figure 5. AD8538 Input Offset Voltage Distribution TEMPERATURE ( C) Figure 8. AD8538 Input Bias Current vs. Temperature C < T A < +25 C 6 4 NUMBER OF AMPLIFIERS SUPPLY CURRENT (µa) TCV OS (µv/ C) Figure 6. AD8538 Input Offset Voltage Drift Distribution SUPPLY VOLTAGE (V) Figure 9. AD8538 Supply Current vs. Supply Voltage INPUT OFFSET VOLTAGE (µv) SUPPLY CURRENT (µa) 5 5 V SY = 2.7V INPUT COMMON-MODE VOLTAGE (V) Figure 7. AD8538 Input Offset Voltage vs. Input Common-Mode Voltage TEMPERATURE ( C) Figure. AD8538 Supply Current vs. Temperature Rev. A Page 8 of 24

9 OUTPUT SATURATION VOLTAGE (mv). SOURCE SINK.... LOAD CURRENT (ma) V SY V OH V OL Figure. AD8538 Output Saturation Voltage vs. Load Current OPEN-LOOP GAIN (db) AND ±.35V R L = kω C L = 2pF 2 45 k k k M ФM Figure 4. AD8538 Open-Loop Gain and Phase vs. Frequency OPEN-LOOP PHASE SHIFT (Degrees) OUTPUT SATURATION VOLTAGE (mv) R L = kω CMRR (db) k k k M TEMPERATURE ( C) V SY V OH V OL Figure 2. AD8538 Output Saturation Voltage vs. Temperature 674- Figure 5. AD8538 CMRR vs. Frequency AND 2.7V CLOSED-LOOP GAIN (db) A V = A V = A V = AND 2.7V C L = 2pF R L = 2kΩ PSRR (db) PSRR +PSRR AND ±.35V 2 k k k M Figure 3. AD8538 Closed-Loop Gain vs. Frequency 674- k k k M Figure 6. AD8538 PSRR vs. Frequency Rev. A Page 9 of 24

10 AND 2.7V A V = A V = C L = 3pF R L = kω OUTPUT IMPEDANCE (Ω) A V = A V = VOLTAGE (V/DIV).. k k k M Figure 7. AD8538 Closed-Loop Output Impedance vs. Frequency TIME (4µs/DIV) Figure 2. AD8538 Large Signal Transient Response SMALL SIGNAL OVERSHOOT (%) R L = 2kΩ V OUT (V) V IN (mv) 3 OS+ 2 OS 2.5 TIME (µs/div) LOAD CAPACITANCE (pf) Figure 8. AD8538 Small Signal Overshoot vs. Load Capacitance A V = 5 Figure 2. AD8538 Positive Overload Recovery VOLTAGE (5mV/DIV) AND 2.7V A V = C L = 3pF R L = 2kΩ V OUT (V) V IN (mv) 2.5 A V = TIME (4µs/DIV) Figure 9. AD8538 Small Signal Transient Response TIME (µs/div) Figure 22. AD8538 Negative Overload Recovery Rev. A Page of 24

11 V IN VOLTAGE NOISE DENSITY (nv/ Hz) k k Figure 23. AD8538 Voltage Noise Density VOLTAGE (V/DIV) V OUT A V = V IN = 6V p-p R L = kω TIME (2µs/DIV) Figure 25. AD8538 No Phase Reversal AND 2.7V VOLTAGE (5nV/DIV) TIME (s/div) Figure 24. AD8538. Hz to Hz Input Voltage Noise Rev. A Page of 24

12 V SY = 2.7 V or ±.35 V, AD8538 only, unless otherwise noted. NUMBER OF AMPLIFIERS V SY = 2.7V V < V CM < 2.7V OUTPUT SATURATION VOLTAGE (mv) V SY = 2.7V SOURCE SINK INPUT OFFSET VOLTAGE (µv) Figure 26. AD8538 Input Offset Voltage Distribution LOAD CURRENT (ma) Figure 29. AD8538 Output Saturation Voltage vs. Load Current NUMBER OF AMPLIFIERS TCV OS (µv/ C) V SY = 2.7V 4 C < T A < +25 C OUTPUT SATURATION VOLTAGE (mv) V SY = 2.7V R L = kω V SY = VOH 5 VOL 5 Figure 27. AD8538 Input Offset Voltage Drift Distribution TEMPERATURE ( C) Figure 3. AD8538 Output Saturation Voltage vs. Temperature INPUT OFFSET VOLTAGE (µv) V SY = 2.7V INPUT COMMON-MODE VOLTAGE (V) Figure 28. AD8538 Input Offset Voltage vs. Input Common-Mode Voltage SMALL SIGNAL OVERSHOOT (%) V SY = 2.7V R L = 2kΩ OS+ LOAD CAPACITANCE (pf) OS Figure 3. AD8538 Small Signal Overshoot vs. Load Capacitance Rev. A Page 2 of 24

13 VOLTAGE (5mV/DIV) V SY = 2.7V A V = C L = pf R L = kω VOLTAGE NOISE DENSITY (nv/ Hz) V SY = 2.7V TIME (4µs/DIV) Figure 32. AD8538 Large Signal Transient Response k k k Figure 33. AD8538 Voltage Noise Density Rev. A Page 3 of 24

14 CHARACTERISTICS only, VS = 5 V or ±2.5 V, unless otherwise noted. NUMBER OF AMPLIFIERS < V CM < 5V INPUT BIAS CURRENT (pa) V OS (µv) Figure 34. Input Offset Voltage Distribution TEMPERATURE ( C) Figure 37. Input Bias Current vs. Temperature NUMBER OF AMPLIFIERS C < V CM < 25 C C +25 C 25 4 C 2 5 I SY (µa) 5 V SY = V TO 5V 4 C < T A < +25 C +25 C TCV OS (µv) Figure 35. Input Offset Voltage Drift Distribution V SY (V) Figure 38. Supply Current vs. Supply Voltage V < V CM < 5V V OS (µv) I SY (µa) V SY = ±.35V V CM (V) Figure 36. Input Offset Voltage vs. Input Common-Mode Voltage TEMPERATURE ( C) Figure 39. Supply Current vs. Temperature Rev. A Page 4 of 24

15 OUTPUT SATURATION VOLTAGE (mv) SOURCE, V S = ±.35V SOURCE, V S = ± 2.5V SINK, V S = ±.35V SINK, V S = ± 2.5V.... I LOAD (ma) Figure 4. Output Saturation Voltage vs. Load Current GAIN (Degrees) R L = 2kΩ C L = 2pF k k k M M Figure 43. Open-Loop Gain and Phase vs. Frequency PHASE (Degrees) OUTPUT SATURATION VOLTAGE (mv) V S = 5V V DD - V OH, I L = 25µA, R L = kω V OL, I L = 25µA, R L = kω CMRR (db) CHANNEL B CHANNEL A 4 V DD - V OH, I L = 25µA, R L = kω 5 2 V OL, I L = 25µA, R L = kω k k k M M TEMPERATURE ( C) Figure 4. Output Saturation Voltage vs. Temperature Figure 44. CMRR vs. Frequency CLOSED-LOOP GAIN (db) A V = A V = A V = R L = 2kΩ C L = 2pF PSRR (db) PSRR+ PSRR 2 4 k k k M M Figure 42. Closed-Loop Gain vs. Frequency k k k M M Figure 45. PSRR vs. Frequency Rev. A Page 5 of 24

16 Z OUT (Ω) VOLTAGE (V/DIV) A V = C L = 3pF R L = kω 2 A V = A V = A V =. k k k M M Figure 46. Closed-Loop Output Impedance vs. Frequency TIME (4µs/DIV) Figure 49. Large Signal Transient Response OVERSHOOT (%) R L = 2kΩ OS+. 2 OS.5 OUTPUT VOLTAGE k TIME (2µs/DIV) CAPACITANCE (pf) Figure 47. Small Signal Overshoot vs. Load Capacitance Figure 5. Positive Overload Recovery INPUT VOLTAGE (5mV/DIV) INPUT VOLTAGE A V = OUTPUT VOLTAGE (V/DIV) VOLTAGE (5mV/DIV) A V = C L = 3pF R L = 2kΩ INPUT VOLTAGE (5mV/DIV) INPUT VOLTAGE A V = 5 OUTPUT VOLTAGE OUTPUT VOLTAGE (5V/DIV) TIME (2µs/DIV) Figure 48. Small Signal Transient Response TIME (2µs/DIV) Figure 5. Negative Overload Recovery Rev. A Page 6 of 24

17 VOLTAGE NOISE DENSITY (nv Hz) k VOLTAGE (2V/DIV) INPUT VOLTAGE OUTPUT VOLTAGE A V = R L = kω k k k Figure 52. Voltage Noise Density TIME (2µs/DIV) Figure 54. No Phase Reversal A V = M 2 VOLTAGE (2mV/DIV) k k k TIME (s/div) Figure 53.. Hz to Hz Input Voltage Noise Figure 55. Channel Separation vs. Frequency CHANNEL SEPARATION (db) Rev. A Page 7 of 24

18 V S = 2.7 V or ±.35 V,, only, unless otherwise noted. NUMBER OF AMPLIFIERS V SY = 2.7V V < V CM < 2.7V OUTPUT SATURATION VOLTAGE (mv) V DD V OH, R L = kω V OL, R L = kω V DD V OH, R L = kω V OL, R L = kω V SY = 2.7V V OS Figure 56. Input Offset Voltage Distribution TEMPERATURE ( C) Figure 59. Output Saturation Voltage vs. Temperature NUMBER OF AMPLIFIERS V SY = ±.35V 4 C < T A < +25 C OVERSHOOT (%) V SY = ±.35V R L = 2kΩ 4 OS+ 3 2 OS TCV OS (µv) Figure 57. Input Offset Voltage Drift Distribution k CAPACITANCE (pf) Figure 6. Small Signal Overshoot vs. Load Capacitance V OS (µv) V SY = 2.7V V < V CM < 2.7V VOLTAGE (5mV/DIV) V SY = ±.35V A V = C L = 3pF R L = kω V CM (V) Figure 58. Input Offset Voltage vs. Input Common-Mode Voltage TIME (4µs/DIV) Figure 6. Large Signal Transient Response Rev. A Page 8 of 24

19 VOLTAGE NOISE DENSITY (nv/ Hz) k V SY = ±.35V CHANNEL SEPARATION (db) V SY = ±.35V k k k Figure 62. Voltage Noise Density k k k Figure 63. Channel Separation vs. Frequency Rev. A Page 9 of 24

20 OUTLINE DIMENSIONS 2.9 BSC BSC 2.8 BSC 2 3 * PIN.9 BSC.95 BSC *. MAX. MAX.5 SEATING.3 PLANE *COMPLIANT TO JEDEC STANDARDS MO-93-AB WITH THE EXCEPTION OF PACKAGE HEIGHT AND THICKNESS. Figure Lead Thin Small Outline Transistor Package [TSOT-23] (UJ-5) Dimensions shown in millimeters 5. (.968) 4.8 (.89) (.574) 6.2 (.244) 3.8 (.497) (.2284).25 (.98). (.4) COPLANARITY. SEATING PLANE.27 (.5) BSC.75 (.688).35 (.532).5 (.2).3 (.22) 8.25 (.98).7 (.67).5 (.96).25 (.99).27 (.5).4 (.57) 45 COMPLIANT TO JEDEC STANDARDS MS-2-AA CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. Figure Lead Standard Small Outline Package [SOIC_N] Narrow Body (R-8) 247-A Dimensions shown in millimeters and (inches) Rev. A Page 2 of 24

21 PIN.65 BSC COPLANARITY.. MAX SEATING PLANE COMPLIANT TO JEDEC STANDARDS MO-87-AA Figure Lead Mini Small Outline Package [MSOP] (RM-8) Dimensions shown in millimeters ORDERING GUIDE Model Temperature Range Package Description Package Option Branding AD8538AUJZ-R2 4 C to +25 C 5-Lead TSOT-23 UJ-5 AC AD8538AUJZ-REEL 4 C to +25 C 5-Lead TSOT-23 UJ-5 AC AD8538AUJZ-REEL7 4 C to +25 C 5-Lead TSOT-23 UJ-5 AC AD8538ARZ 4 C to +25 C 8-Lead SOIC_N R-8 AD8538ARZ-REEL 4 C to +25 C 8-Lead SOIC_N R-8 AD8538ARZ-REEL7 4 C to +25 C 8-Lead SOIC_N R-8 ARMZ-R2 4 C to +25 C 8-Lead MSOP RM-8 AS ARMZ-REEL 4 C to +25 C 8-Lead MSOP RM-8 AS ARZ 4 C to +25 C 8-Lead SOIC_N R-8 ARZ-REEL 4 C to +25 C 8-Lead SOIC_N R-8 ARZ-REEL7 4 C to +25 C 8-Lead SOIC_N R-8 Z = RoHS Compliant Part. Rev. A Page 2 of 24

22 NOTES Rev. A Page 22 of 24

23 NOTES Rev. A Page 23 of 24

24 NOTES Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D674--5/7(A) Rev. A Page 24 of 24