N Channel Depletion MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS
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1 N Channel Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc Gate Source Voltage VGS 25 Vdc Gate Current IG 10 madc Total Device TA = 25 C Derate above 25 C PD mw mw/ C Junction Temperature Range TJ 125 C Storage Temperature Range Tstg 65 to +150 C CASE 29 11, STYLE 5 TO 92 (TO 226AA) ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate Source Breakdown Voltage V(BR)GSS 25 Vdc (IG = 10 µadc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100 C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 2.0 nadc) Gate Source Voltage (VDS = 15 Vdc, ID = 0.2 madc) ON CHARACTERISTICS Zero Gate Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0 Vdc) SMALL SIGNAL CHARACTERISTICS Forward Transfer Admittance(1) (VDS = 15 Vdc, VGS = 0, f = 1.0 khz) (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Input Admittance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Output Conductance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) IGSS nadc µadc VGS(off) 8.0 Vdc VGS Vdc IDSS madc yfs mhos Re(yis) 800 mhos Re(yos) 200 mhos Ciss 7.0 pf Crss 3.0 pf 1. Pulse Test; Pulse Width 630 ms, Duty Cycle 10%. Semiconductor Components Industries, LLC, 2001 November, 2001 Rev. 2 1 Publication Order Number: MPF102/D
2 COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25 C) Figure 1. Input Admittance (yis) Figure 2. Reverse Transfer Admittance (yrs) Figure 3. Forward Transadmittance (yfs) Figure 4. Output Admittance (yos) 2
3 COMMON SOURCE CHARACTERISTICS S PARAMETERS (VDS = 15 Vdc, Tchannel = 25 C, Data Points in MHz) Figure 5. S11s Figure 6. S12s Figure 7. S21s Figure 8. S22s 3
4 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25 C) Figure 9. Input Admittance (yig) Figure 10. Reverse Transfer Admittance (yrg) Figure 11. Forward Transfer Admittance (yfg) Figure 12. Output Admittance (yog) 4
5 COMMON GATE CHARACTERISTICS S PARAMETERS (VDS = 15 Vdc, Tchannel = 25 C, Data Points in MHz) Figure 13. S11g Figure 14. S12g Figure 15. S21g Figure 16. S22g 5
6 PACKAGE DIMENSIONS TO 92 (TO 226AB) CASE ISSUE AL A B R P L K X X D G H J V C N SECTION X X N 6
7 Notes 7
8 Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com N. American Technical Support: Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center Nishi Gotanda, Shinagawa ku, Tokyo, Japan Phone: r14525@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. 8 MPF102/D
N Channel Depletion MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS
N Channel Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc Gate Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 madc Total Device Dissipation
N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS
SEMICONDUCTOR TECHNICAL DATA Order this document by MPF2/D N Channel Depletion 1 DRAIN 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc Gate
NPN MPS650 PNP MPS750 MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) OFF CHARACTERISTICS
MAXIMUM RATINGS Rating Symbol MPS650 MPS750 MPS651 MPS751 Collector Emitter Voltage VCE 40 60 Vdc Collector Base Voltage VCB 60 80 Vdc Emitter Base Voltage VEB 5.0 Vdc Collector Current Continuous IC 2.0
N Channel Depletion MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS
N Channel Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Drain Gate Voltage V DG 25 Vdc Gate Source Voltage V GS 25 Vdc Gate Current I G 10 madc Total Device Dissipation
NPN Silicon ON Semiconductor Preferred Device
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100 Vdc Collector Base Voltage Emitter Base Voltage Collector Current Continuous. Adc Peak. Watts Derate above 25 C. Watts 25 C
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J308. N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMICONDUCTOR TECHNICAL DATA Order this document by J38/D N Channel Depletion 3 GATE 1 DRAIN Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc
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TIP120, TIP121, TIP122,
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P D P D mw mw/ C Watts mw/ C T J, T stg 55 to +150 C (1) 200 C/W. Characteristic Symbol Min Typ Max Unit.
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EMH1307. P-Channel Power MOSFET 20V, 6.5A, 26mΩ, Single EMH8. Features. Specifications. Input Capacitance Ciss=1100pF(typ.) Halogen free compliance
Ordering number : ENA11A EMH1 P-Channel Power MOSFET V, 6.A, 6mΩ, Single EMH8 http://onsemi.com Features ON-resistance RDS(on)1 : mω(typ.) 1.8V drive Protection diode in Input Capacitance Ciss=11pF(typ.)
NVC6S5A444NLZ. Power MOSFET. 60 V, 78 m, 4.5 A, N Channel
Power MOSFET 6 V, 78 m,.5 A, N Channel Automotive Power MOSFET designed to minimize gate charge and low on resistance. AEC Q qualified MOSFET and PPAP capable suitable for automotive applications. Features.5
125 C/W. Value Parameter Symbol Conditions
Power MOSFET 250V, 6.5Ω, 350mA, Single N-Channel Features On-Resistance RDS(on)1=5Ω (typ) 2.5V Drive Pb-Free, Halogen Free and RoHS Compliance ESD Diode - Protected Gate Low Ciss and High Speed Switching
MPSA70. Amplifier Transistor. PNP Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon Features Pb Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Emitter Base Voltage V EBO 4. Vdc Collector Current
MC33064DM 5 UNDERVOLTAGE SENSING CIRCUIT
The MC34064 is an undervoltage sensing circuit specifically designed for use as a reset controller in microprocessor-based systems. It offers the designer an economical solution for low voltage detection
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. CollectorEmitter
SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MJL3281A/D The MJL3281A and MJL132A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. Designed
MPSA20. Amplifier Transistor. NPN Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
MPSA Amplifier Transistor NPN Silicon Features Pb Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 4. Vdc Collector
MMBFJ309. N Channel MAXIMUM RATINGS THERMAL CHARACTERISTICS DEVICE MARKING. ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)
N Channel MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate Source Voltage V GS 25 Vdc Gate Current I G 10 madc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total
MMBT3906LT3G. PNP Silicon. Pb-Free Packages are Available. Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device General Purpose Transistor PNP Silicon Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Collector Base Voltage V CBO 4
3LP01SS. P-Channel Small Signal MOSFET 30V, 0.1A, 10.4Ω, Single SSFP. Features. Specifications. Low ON-resistance High-speed switching 2.
Ordering number : EN6648B LP1SS P-Channel Small Signal MOSFET V,.1A, 1.4Ω, Single SSFP http://onsemi.com Features Low ON-resistance High-speed switching.v drive Specifications Absolute Maximum Ratings
MCH6331. Power MOSFET 30V, 98mΩ, 3.5A, Single P-Channel
Power MOSFET 30V, 98mΩ, 3.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
MARKING DIAGRAMS Figure 1. Logic Diagram ORDERING INFORMATION Figure 2. Dip Pin Assignment CDIP 16 L SUFFIX CASE 620A
The MC0H6 is a functional/pinout duplication of the MC06, with 00% improvement in propagation delay and no increase in power supply current. Propagation Delay,.0 ns Typical Power Dissipation 85 mw Typ/Pkg
2SK4177. N-Channel Power MOSFET 1500V, 2A, 13Ω, TO-263-2L. Features. Specifications. ON-resistance RDS(on)=10Ω(typ.) 10V drive
Ordering number : ENA869A SK41 N-Channel Power MOSFET 1V, A, 1Ω, TO-6-L http://onsemi.com Features ON-resistance RDS(on)=1Ω(typ.) 1V drive Input capacitance Ciss=8pF (typ.) Specifications Absolute Maximum
BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current
BBS3002. P-Channel Power MOSFET 60V, 100A, 5.8mΩ, TO-263-2L/TO-263. Features. Specifications TO-263
Ordering number : ENA1C BBS P-Channel Power MOSFET 6V, 1A,.8mΩ, TO-6-L/TO-6 http://onsemi.com Features ON-resistance RDS(on)1=4.4mΩ (typ.) Input capacitance Ciss=1pF (typ.) 4V drive TO-6 Specifications
DPAK Surface Mount Package
MBRD620CT, MBRD640CT and MBRD660CT are Preferred Devices DPAK Surface Mount Package...in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following
1 Block HV2 LDMOS Device Number of fingers: 56, Periphery: 5.04 mm Frequency: 1 GHz, V DS. =26 v & I DS
Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm 5 ohm Termination Output Power at Fundamental vs. 4 11 Transducer Gain vs. Output Power at Fundamental 3 1-1 Transducer Gain 1 9 7 6 - -3 - -1 1 3 4 5-3
MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes
MMSD3TG, SMMSD3TG, MMSD7TG, SMMSD7TG, SOD-3 Schottky Barrier Diodes The MMSD3T, and MMSD7T devices are spinoffs of our popular MMBD3LT, and MMBD7LT SOT3 devices. They are designed for highefficiency UHF
NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
PIN CONNECTIONS ORDERING INFORMATION PIN CONNECTIONS P SUFFIX PLASTIC PACKAGE CASE 626 D SUFFIX PLASTIC PACKAGE CASE 751 (SO 8) Inputs P SUFFIX
Quality bipolar fabrication with innovative design concepts are employed for the MC33181/2/4, MC34181/2/4 series of monolithic operational amplifiers. This JFET input series of operational amplifiers operates
MJW0281A (NPN) MJW0302A (PNP) Complementary NPN PNP Power Bipolar Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 150 WATTS
MJW28A (NPN) MJW32A (PNP) Preferred Devices Complementary NPN PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJW328A and MJW32A audio output transistors.
CPH6354. Power MOSFET 60V, 100mΩ, 4A, Single P-Channel. Features. Specifications
CPH64 Power MOSFET 6V, 1mΩ, 4A, Single P-Channel Features ON-resistance RDS(on)1=mW(typ.) 4V Drive ESD Diode - Protected Gate Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings
CPH3360. Power MOSFET 30V, 303mΩ, 1.6A, Single P-Channel
Power MOSFET 30V, 303mΩ, 1.6A, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This