N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS

Size: px

Start display at page:

Download "N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS"

Rudolf Hardy
6 years ago
Views:

1 SEMICONDUCTOR TECHNICAL DATA Order this document by MPF2/D N Channel Depletion 1 DRAIN 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc Gate Source Voltage VGS 25 Vdc Gate Current IG madc Total Device TA = 25 C Derate above 25 C PD SOURCE mw mw/ C CASE 29 04, STYLE 5 TO 92 (TO 226AA) Junction Temperature Range TJ 125 C Storage Temperature Range Tstg 65 to +150 C ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate Source Breakdown Voltage V(BR)GSS 25 Vdc (IG = µadc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = nadc) Gate Source Voltage (VDS = 15 Vdc, ID = madc) ON CHARACTERISTICS Zero Gate Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0 Vdc) SMALL SIGNAL CHARACTERISTICS Forward Transfer Admittance(1) (VDS = 15 Vdc, VGS = 0, f = khz) (VDS = 15 Vdc, VGS = 0, f = MHz) Input Admittance (VDS = 15 Vdc, VGS = 0, f = MHz) Output Conductance (VDS = 15 Vdc, VGS = 0, f = MHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = MHz) IGSS nadc µadc VGS(off) 8.0 Vdc VGS 7.5 Vdc IDSS 20 madc yfs mhos Re(yis) mhos Re(yos) mhos Ciss 7.0 pf Crss pf 1. Pulse Test; Pulse Width 630 ms, Duty Cycle %. Motorola, Inc

2 POWER GAIN f = MHz PG, POWER GAIN (db) MHz 8.0 Tchannel = 25 C VDS = 15 Vdc VGS = 0 V ID, DRAIN CURRENT (ma) Figure 1. Effects of Drain Current INPUT TO 50 Ω SOURCE C1 NEUTRALIZING COIL R g Adjust V GS for I D = 50 ma V GS < 0 Volts L3 L1 C5 C6 V GS NOTE: C2 CASE C4 COMMON V DS +15 V L2 C7 C3 I D = ma TO Ω LOAD The noise source is a hot cold body (AIL type 70 or equivalent) with a test receiver (AIL type 136 or equivalent). Reference VALUE Designation MHz MHz C1 7.0 pf 1.8 pf C2 0 pf 17 pf C3 pf pf C pf pf C pf pf C µf µf C µf µf L1 µh* µh** L2 5 µh* 0.03 µh** L3 4 µh* 2 µh** *L1 17 turns, (approx. depends upon circuit layout) AWG #28 enameled copper wire, close wound on 9/32 ceramic coil form. Tuning provided by a powdered iron slug. *L2 4 1/2 turns, AWG #18 enameled copper wire, 5/16 long, 3/8 I.D. (AIR CORE). *L3 3 1/2 turns, AWG #18 enameled copper wire, 1/4 long, 3/8 I.D. (AIR CORE). Figure 2. MHz and MHz Neutralized Test Circuit **L1 6 turns, (approx. depends upon circuit layout) AWG #24 enameled copper wire, close wound on 7/32 ceramic coil form. Tuning provided by an aluminum slug. **L2 1 turn, AWG #16 enameled copper wire, 3/8 I.D. (AIR CORE). **L3 1/2 turn, AWG #16 enameled copper wire, 1/4 I.D. (AIR CORE). 2

3 NOISE FIGURE (Tchannel = 25 C) 6.5 NF, NOISE FIGURE (db) MHz f = MHz ID = ma NF, NOISE FIGURE (db) MHz f = MHz VDS = 15 V VGS = 0 V VDS, DRAIN SOURCE VOLTAGE (VOLTS) Figure 3. Effects of Drain Source Voltage ID, DRAIN CURRENT (ma) Figure 4. Effects of Drain Current P out, OUTPUT POWER PER TONE (db) INTERMODULATION CHARACTERISTICS VDS = 15 Vdc f1 = 399 MHz f2 = MHz FUNDAMENTAL IDSS, 5 IDSS 3RD ORDER INTERCEPT Pin, INPUT POWER PER TONE (db) 3RD ORDER IMD IDSS, 5 IDSS Figure 5. Third Order Intermodulation Distortion 3

4 gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) IDSS COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25 C) IDSS IDSS 5 IDSS grs, REVERSE TRANSADMITTANCE (mmhos) brs, REVERSE SUSCEPTANCE (mmhos) IDSS 5 IDSS IDSS, 5 IDSS Figure 6. Input Admittance (yis) Figure 7. Reverse Transfer Admittance (yrs) gfs, FORWARD TRANSCONDUCTANCE (mmhos) bfs, FORWARD SUSCEPTANCE (mmhos) IDSS 5 IDSS IDSS 5 IDSS gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) 0.05 IDSS and 5 IDSS IDSS 5 IDSS Figure 8. Forward Transadmittance (yfs) Figure 9. Output Admittance (yos) 4

5 COMMON SOURCE CHARACTERISTICS S PARAMETERS (VDS = 15 Vdc, Tchannel = 25 C, Data Points in MHz) I D = 5 I DSS I D = I DSS I D = I DSS, 5 I DSS Figure. S11s Figure 11. S12s I D = 5 I DSS 0.9 I D = I DSS 0.8 I D = 5 I DSS I D = I DSS Figure 12. S21s Figure 13. S22s 5

6 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25 C) gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) IDSS IDSS IDSS 5 IDSS IDSS, 5 IDSS grg, REVERSE TRANSADMITTANCE (mmhos) brg, REVERSE SUSCEPTANCE (mmhos) IDSS 5 IDSS Figure 14. Input Admittance (yig) Figure 15. Reverse Transfer Admittance (yrg) gfg, FORWARD TRANSCONDUCTANCE (mmhos) bfg, FORWARD SUSCEPTANCE (mmhos) 7.0 IDSS 5 IDSS gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) IDSS IDSS IDSS 5 IDSS IDSS, 5 IDSS Figure 16. Forward Transfer Admittance (yfg) Figure 17. Output Admittance (yog) 6

7 COMMON GATE CHARACTERISTICS S PARAMETERS (VDS = 15 Vdc, Tchannel = 25 C, Data Points in MHz) I D = 5 I DSS 0.04 I D = I DSS 0.4 I D = I DSS I D = 5 I DSS Figure 18. S11g Figure 19. S12g I D = I DSS I D = I DSS, 5 I DSS 0.8 I D = 5 I DSS Figure 20. S21g Figure 21. S22g 7

8 PACKAGE DIMENSIONS SEATING PLANE R A X X H V 1 N F G P N B L K C D J SECTION X X NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N P R V CASE (TO 226AA) ISSUE AD STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, , P.O. Box 5405, Denver, Colorado or Nishi Gotanda, Shinagawa ku, Tokyo 141, Japan Mfax : RMFAX0@ .sps.mot.com TOUCHTONE ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, US & Canada ONLY Ting Kok Road, Tai Po, N.T., Hong Kong INTERNET: 8 MPF2/D

J308. N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

J308. N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) SEMICONDUCTOR TECHNICAL DATA Order this document by J38/D N Channel Depletion 3 GATE 1 DRAIN Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc