NSS12100UW3TCG. 12 V, 1 A, Low V CE(sat) PNP Transistor. 12 VOLTS, 1.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 400 m

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1 NSSUWTG, A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DD converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e PowerEdge devices to be driven directly from PMU s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features High urrent apability ( A) High Power Handling (Up to 74 mw) Low E(s) ( m ma) Small Size Low Noise NS Prefix for Automotive and Other Applications Requiring Unique Site and ontrol hange Requirements; AEQ Qualified and PPAP apable These Devices are PbFree, Halogen Free/BFR Free and are RoHS ompliant Benefits High Specific urrent and Power apability Reduces Required PB Area Reduced Parasitic Losses Increases Battery Life MAXIMUM RATINGS (T A = ) Rating Symbol Max Unit ollector-emitter oltage EO dc ollector-base oltage BO dc Emitter-Base oltage EBO. dc ollector urrent ontinuous ollector urrent Peak I. I M. Electrostatic Discharge ESD HBM lass B MM lass Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Adc OLTS,. AMPS PNP LOW E(sat) TRANSISTOR EQUIALENT R DS(on) 4 m ASE 6AU ORDERING INFORMATION Device Package Shipping NSSUWTG BASE NSUWTG OLLETOR EMITTER MARKING DIAGRAM G M G = Specific Device ode M = Date ode = PbFree Package (PbFree) (PbFree) / Tape & Reel / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. Semiconductor omponents Industries, LL, 4 September, 4 Rev. Publication Order Number: NSSUW/D

2 NSSUWTG THERMAL HARATERISTIS Total Device Dissipation, T A = Derate above haracteristic Symbol Max Unit P D (Note ) mw mw/ Thermal Resistance, JunctiontoAmbient R JA (Note ) 69 /W Total Device Dissipation, T A = Derate above P D (Note ). 9. W mw/ Thermal Resistance, JunctiontoAmbient R JA (Note ) /W Thermal Resistance, JunctiontoLead 6 R JL (Note ) /W Junction and Storage Temperature Range T J, T stg to +. mm, oz copper traces.. mm, oz copper traces. ELETRIAL HARATERISTIS (T J = unless otherwise noted) haracteristic Symbol Min Typ Max Unit OFF HARATERISTIS ollectoremitter Breakdown oltage, (I = madc, I B = ) (BR)EO dc ollectorbase Breakdown oltage, (I =. madc, I E = ) (BR)BO dc EmitterBase Breakdown oltage, (I E =. madc, I = ) (BR)EBO. dc ollector utoff urrent, ( B = dc, I E = ) I BO.. Adc Emitter utoff urrent, ( ES =. dc, I E = ) I EBO.. Adc ON HARATERISTIS D urrent Gain (Note ) (I = ma, E =. ) (I = ma, E =. ) (I =. A, E =. ) h FE 7 4 ollectoremitter Saturation oltage (Note ) (I =. A, I B =. A) (Note 4) (I =. A, I B =. A) (I =. A, I B =. A) (I =. A, I B =. A) (I =. A, I B =. A) E(sat) BaseEmitter Saturation oltage (Note ) (I =. A, I B =. A) BaseEmitter Turnon oltage (Note ) (I =. A, E =. ) BE(sat).9. BE(on).. Input apacitance ( EB =., f =. MHz) ibo 4 pf Output apacitance ( B =., f =. MHz) obo pf SWITHING HARATERISTIS Delay ( =, I = 7 ma, I B = ma) t d ns Rise ( =, I = 7 ma, I B = ma) t r 9 ns Storage ( =, I = 7 ma, I B = ma) t s 4 ns Fall ( =, I = 7 ma, I B = ma) t f ns SMALLSIGNAL HARATERISTIS urrentgain Bandwidth Product, (I = ma, E = dc, f = MHz) f T MHz Noise Figure, (I =. ma, E = dc, R S = k, f = khz, BW = Hz) NF. db Product parametric performance is indicated in the Electrical haracteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical haracteristics if operated under different conditions.. Pulsed ondition: Pulse Width = sec, Duty ycle %. 4. Guaranteed by design but not tested.

3 NSSUWTG E(sat), OLLETOR EMITTER SATURATION OLTAGE ()..9 I /I B = E(sat) = Figure. ollector Emitter Saturation oltage vs. ollector urrent E(sat), OLLETOR EMITTER SATURATION OLTAGE () I /I B = E(sat) =... Figure. ollector Emitter Saturation oltage vs. ollector urrent h FE, D URRENT GAIN 6 4 (. ) (. ) (. ) (. ) (. ) (. ) BE(sat), BASE EMITTER SATURATION OLTAGE () I /I B = T A = Figure. D urrent Gain vs. ollector urrent Figure 4. Base Emitter Saturation oltage vs. ollector urrent BE(on), BASE EMITTER TURNON OLTAGE ().4 E =... T A = E, OLLETOREMITTER OLTAGE (). ma ma ma I = ma I B, BASE URRENT (ma) Figure. Base Emitter TurnOn oltage vs. ollector urrent Figure 6. Saturation Region

4 NSSUWTG ibo, INPUT APAITANE (pf) 4 4 ibo(pf) 4 EB, EMITTER BASE OLTAGE () Figure 7. Input apacitance obo, OUTPUT APAITANE (pf) obo(pf) B, OLLETOR BASE OLTAGE () Figure 8. Output apacitance 4

5 NSSUWTG PAKAGE DIMENSIONS ASE 6AU ISSUE O D A B NOTES:. DIMENSIONING AND TOLERANING PER ASME Y4.M, ONTROLLING DIMENSION: MILLIMETERS.. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN. AND. MM FROM TERMINAL. 4. OPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. PIN ONE REFERENE X. X. TOP IEW E MILLIMETERS INHES DIM MIN NOM MAX MIN NOM MAX A A.... A. REF.8 REF b D. BS.79 BS D E. BS.79 BS E e. BS. BS K. REF.4 REF L SOLDERING FOOTPRINT* 8 X. SEATING PLANE.8 A SIDE IEW (A) D e e/ A X X L K E *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. X b.. A B NOTE BOTTOM IEW ON Semiconductor and the are registered trademarks of Semiconductor omponents Industries, LL (SILL) or its subsidiaries in the United States and/or other countries. SILL owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SILL s product/patent coverage may be accessed at SILL reserves the right to make changes without further notice to any products herein. SILL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SILL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SILL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SILL does not convey any license under its patent rights nor the rights of others. SILL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SILL product could create a situation where personal injury or death may occur. Should Buyer purchase or use SILL products for any such unintended or unauthorized application, Buyer shall indemnify and hold SILL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SILL was negligent regarding the design or manufacture of the part. SILL is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLIATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution enter for ON Semiconductor P.O. Box 6, Denver, olorado 87 USA Phone: 677 or Toll Free USA/anada Fax: 6776 or Toll Free USA/anada orderlit@onsemi.com N. American Technical Support: 8898 Toll Free USA/anada Europe, Middle East and Africa Technical Support: Phone: Japan ustomer Focus enter Phone: 887 ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NSSUW/D