NJD1718, NJVNJD1718. Power Transistors. PNP Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS

Size: px
Start display at page:

Download "NJD1718, NJVNJD1718. Power Transistors. PNP Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS"

Transcription

1 Power Transistors PNP Silicon For Surface Mount pplications Designed for highgain audio amplifier and power switching applications. Features Low ollectoremitter Saturation oltage High Switching Speed Epoxy Meets UL 5 in NJ Prefix for utomotive and Other pplications Requiring Unique Site and ontrol hange Requirements; EQ Qualified and PPP apable These Devices are PbFree, Halogen Free/BFR Free and are RoHS ompliant SILION POWER TRNSISTORS 2 MPERES 5 OLTS 5 WTTS OLLETOR 2, MXIMUM RTINGS Rating Symbol alue Unit ollectorbase oltage B 5 ollectoremitter oltage EO 5 EmitterBase oltage EB 5 ollector urrent ontinuous I 2 dc ollector urrent Peak I M 3 dc Base urrent I B. dc Total Device T = Derate above Total Device T = (Note ) Derate above Operating and Storage Junction Temperature Range P D 5. P D.68. W W/ W W/ T J, T stg 65 to +5 ESD Human Body Model HBM 3B ESD Machine Model MM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating onditions is not implied. Extended exposure to stresses above the Recommended Operating onditions may affect device reliability.. These ratings are applicable when surface mounted on the minimum pad sizes recommended. THERML HRTERISTIS haracteristic Symbol Max Unit Thermal Resistance Junctiontoase Junctiontombient (Note 2) R J R J 89.3 /W 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. Y WW G 2 3 SE 369 STYLE MRKING DIGRM YWW J 78G = ssembly Location = Year = Work Week = PbFree Device ORDERING INFORMTION Device Package Shipping NJD78TG BSE NJNJD78TG 3 EMITTER (PbFree) (PbFree) 25 / Tape & Reel 25 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. Semiconductor omponents Industries, LL, 23 October, 23 Rev. Publication Order Number: NJD78/D

2 ELETRIL HRTERISTIS (T = unless otherwise noted) haracteristic Symbol Min Typ Max Unit OFF HRTERISTIS ollectoremitter Breakdown oltage (Note 3) B EO (I = mdc, I B = ) 5 Î ollector utoff urrent I ( B = 5, I E = ) BO Î ndc Emitter utoff urrent ( BE = 5, I = ) I EBO Î ndc ON HRTERISTIS D urrent Gain (Note 3) h (I =.5, E = 2 ) FE 7Î 2 (I =.5 dc, E = 2 ) ollectoremitter Saturation oltage (Note 3) (I =, I B E(sat) =.5 ).5 BaseEmitter Saturation oltage (Note 3) (I =, I B =.5 dc) BE(sat) Î.2 BaseEmitter On oltage (Note 3) BE(on) (I = dc, E = 2 ) ÎÎ.2 DYNMI HRTERISTIS urrentgain Bandwidth Product (Note ) (I = 5 mdc, E = 2, f test f T = MHz) Î 8 MHz Output apacitance ( B =, I E =, f =. MHz) ob Î 33 pf Switching Timers t ON Î 55 ns = 3, I = t STG Î 32 ÎÎ 3. Pulse Test: Pulse Width = 3 s, Duty ycle 2%.. f T = h fe f test. t f 2

3 TYPIL HRTERISTIS h FE, D URRENT GIN E = 2. E(sat), OLLETOREMITTER STURTION OLTGE () I /I B = Figure. D urrent Gain... Figure 2. ollectoremitter Saturation oltage BE(sat), BSEEMITTER STURTION OLTGE (). I /I B = BE(on), BSEEMITTER OLTGE ().2 E = Figure 3. BaseEmitter Saturation oltage Figure. BaseEmitter oltage, PITNE (pf) ib ob T = f T, URRENTGIN BNDWIDTH PRODUT E = 2. T =. R, REERSE OLTGE () Figure 5. apacitance... Figure 6. urrentgainbandwidth Product 3

4 TYPIL HRTERISTIS 6 ms. s. ms ms P D, POWER DISSIPTION (W) E, OLLETOR EMITTER OLTGE () Figure 7. State Operating rea T, MBIENT TEMPERTURE ( ) Figure 8. Power Derating r(t), TRNSIENT THERML RESISTNE (NORMLIZED) D = (SINGLE PULSE) R J (t) = r(t) J R J = /W MX D URES PPLY FOR POWER PULSE TRIN SHOWN RED TIME T t T J(pk) - T = P (pk) J (t) P (pk) t t 2 DUTY YLE, D = t /t t, TIME (ms) Figure 9. Thermal Response

5 PKGE DIMENSIONS L3 L b2 e E b3 2 3 b D B DETIL c.5 (.3) M c2 H L2 GUGE PLNE L L 6.2 SE 369 ISSUE D DETIL ROTTED 9 W SOLDERING FOOTPRINT* H 3..8 Z SETING PLNE NOTES:. DIMENSIONING ND TOLERNING PER SME Y.5M, ONTROLLING DIMENSION: INHES. 3. THERML PD ONTOUR OPTIONL WITHIN DI- MENSIONS b3, L3 and Z.. DIMENSIONS D ND E DO NOT INLUDE MOLD FLSH, PROTRUSIONS, OR BURRS. MOLD FLSH, PROTRUSIONS, OR GTE BURRS SHLL NOT EXEED.6 INHES PER SIDE. 5. DIMENSIONS D ND E RE DETERMINED T THE OUTERMOST EXTREMES OF THE PLSTI BODY. 6. DTUMS ND B RE DETERMINED T DTUM PLNE H. INHES MILLIMETERS DIM MIN MX MIN MX b b b c c D E e.9 BS 2.29 BS H L L.8 REF 2.7 REF L2.2 BS.5 BS L L.. Z STYLE : PIN. BSE 2. OLLETOR 3. EMITTER. OLLETOR SLE 3: mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor omponents Industries, LL (SILL). SILL owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. listing of SILL s product/patent coverage may be accessed at SILL reserves the right to make changes without further notice to any products herein. SILL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SILL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SILL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SILL does not convey any license under its patent rights nor the rights of others. SILL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SILL product could create a situation where personal injury or death may occur. Should Buyer purchase or use SILL products for any such unintended or unauthorized application, Buyer shall indemnify and hold SILL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SILL was negligent regarding the design or manufacture of the part. SILL is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLITION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution enter for ON Semiconductor P.O. Box 563, Denver, olorado 827 US Phone: or Toll Free US/anada Fax: or Toll Free US/anada orderlit@onsemi.com N. merican Technical Support: Toll Free US/anada Europe, Middle East and frica Technical Support: Phone: Japan ustomer Focus enter Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NJD78/D

NJD2873T4G NJVNJD2873T4G. Power Transistors. NPN Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS

NJD2873T4G NJVNJD2873T4G. Power Transistors. NPN Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS NJD287TG, NJVNJD287TG Power Transistors NPN Silicon For Surface Mount pplications Designed for highgain audio amplifier applications. Features High DC Current Gain Low CollectorEmitter Saturation Voltage

More information

MJD340 (NPN) MJD350 (PNP) High Voltage Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS

MJD340 (NPN) MJD350 (PNP) High Voltage Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS MJD (NPN) MJD (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Features

More information

MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors DPAK For Surface Mount Applications

MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors DPAK For Surface Mount Applications MJD34, NJMJD34T4G (NPN), MJD3, NJMJD3T4G (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching

More information

J5731. High Voltage PNP Silicon Power Transistors SILICON POWER TRANSISTORS 1.0 AMPERE 350 VOLTS, 15 WATTS

J5731. High Voltage PNP Silicon Power Transistors SILICON POWER TRANSISTORS 1.0 AMPERE 350 VOLTS, 15 WATTS High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features PNP Complements to the MJD7 thru

More information

MBR5H100MFST3G NRVB5H100MFST3G. SWITCHMODE Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 5 AMPERES 100 VOLTS

MBR5H100MFST3G NRVB5H100MFST3G. SWITCHMODE Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 5 AMPERES 100 VOLTS MBRHMFS, NRVBHMFS SWITHMODE Power Rectifiers These state of the art devices have the following features: Features Low Power Loss / High Efficiency New Package Provides apability of Inspection and Probe

More information

NSS40500UW3T2G. 40 V, 6.0 A, Low V CE(sat) PNP Transistor. 40 VOLTS 6.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 65 m

NSS40500UW3T2G. 40 V, 6.0 A, Low V CE(sat) PNP Transistor. 40 VOLTS 6.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 65 m 4, 6. A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high current

More information

12 VOLTS, 6.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 45 m. MAXIMUM RATINGS (T A = 25 C) MARKING DIAGRAM

12 VOLTS, 6.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 45 m.   MAXIMUM RATINGS (T A = 25 C) MARKING DIAGRAM NSS16F8T1G 1, 6. A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high

More information

MBRD620CTG Series, NRVBD640CTG Series. Switch Mode Power Rectifiers. DPAK 3 Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES, VOLTS

MBRD620CTG Series, NRVBD640CTG Series. Switch Mode Power Rectifiers. DPAK 3 Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES, VOLTS MBRD62CTG Series, NRVBD64CTG Series Switch Mode Power Rectifiers DPK 3 Surface Mount Package These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling

More information

MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors

MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors MJD4, NJMJD4T4G (NPN), MJD, NJMJDT4G (PNP) High oltage Power Transistors for Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching

More information

NSS12100UW3TCG. 12 V, 1 A, Low V CE(sat) PNP Transistor. 12 VOLTS, 1.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 400 m

NSS12100UW3TCG. 12 V, 1 A, Low V CE(sat) PNP Transistor. 12 VOLTS, 1.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 400 m NSSUWTG, A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high current

More information

NJT4031N, NJV4031NT1G, NJT4031NT3G. Bipolar Power Transistors. NPN Silicon NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS

NJT4031N, NJV4031NT1G, NJT4031NT3G. Bipolar Power Transistors. NPN Silicon NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS NJTN, NJVNTG, NJVNTG Bipolar Power Transistors NPN Silicon Features Epoxy Meets UL 9, V @.5 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ

More information

NSS20601CF8T1G 20 V, 8.0 A, Low V CE(sat) NPN Transistor

NSS20601CF8T1G 20 V, 8.0 A, Low V CE(sat) NPN Transistor NSSF8TG V, 8. A, Low V E(sat) NPN Transistor ON Semiconductor's e PowerEdge family of low V E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V E(sat) ) and

More information

BC857BTT1G. General Purpose Transistor. PNP Silicon

BC857BTT1G. General Purpose Transistor. PNP Silicon General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.

More information

MBRS260T3G NRVBS260T3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS

MBRS260T3G NRVBS260T3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS MBRS60T3G, NRVBS60T3G Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction

More information

NSS35200CF8T1G. 35 V, 7 A, Low V CE(sat) PNP Transistor. 35 VOLTS 7.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 78 m

NSS35200CF8T1G. 35 V, 7 A, Low V CE(sat) PNP Transistor. 35 VOLTS 7.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 78 m NSSF8T1G V, 7 A, Low V E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low V E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V E(sat) ) and

More information

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed

More information

BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1 Series. General Purpose Transistors. PNP Silicon

BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1 Series. General Purpose Transistors. PNP Silicon BC856BWT1, SBC856BWT1, BC857BWT1, SBC857BWT1, BC858AWT1 General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2

More information

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter

More information

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching

More information

BC856ALT1G Series. General Purpose Transistors. PNP Silicon

BC856ALT1G Series. General Purpose Transistors. PNP Silicon General Purpose Transistors PNP Silicon Features S and NS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices

More information

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount

More information

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series. Dual General Purpose Transistors PNP Duals

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series. Dual General Purpose Transistors PNP Duals BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications.

More information

MBRS2H100T3G NBRS2H100T3G, MBRA2H100T3G NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package

MBRS2H100T3G NBRS2H100T3G, MBRA2H100T3G NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package MBRS2HT3G, NBRS2HT3G, MBR2HT3G, NRVB2HT3G, Surface Mount Schottky Power Rectifier SM/ Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier.

More information

MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS

MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS MJE1502 (NPN), MJE150 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as highfrequency drivers in audio amplifiers. Features High DC Current Gain High Current Gain Bandwidth Product

More information

MBRA130LT3G NRVBA130LT3G. Surface Mount Schottky Power Rectifier. SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS

MBRA130LT3G NRVBA130LT3G. Surface Mount Schottky Power Rectifier. SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS MBR13LT3G, NRVB13LT3G Surface Mount Schottky Power Rectifier SM Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial

More information

MBRA140T3G NRVBA140T3G. Surface Mount Schottky Power Rectifier. SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.

MBRA140T3G NRVBA140T3G. Surface Mount Schottky Power Rectifier. SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1. MBR14T3G, NRVB14T3G Surface Mount Schottky Power Rectifier SM Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art

More information

MJD44H11 (NPN) MJD45H11 (PNP)

MJD44H11 (NPN) MJD45H11 (PNP) MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such

More information

MBRS240LT3G NRVBS240LT3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 40 VOLTS

MBRS240LT3G NRVBS240LT3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 40 VOLTS MBRS24LT3G, NRVBS24LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial

More information

MJD200 (NPN), MJD210 (PNP) Complementary Plastic Power Transistors. NPN/PNP Silicon DPAK For Surface Mount Applications

MJD200 (NPN), MJD210 (PNP) Complementary Plastic Power Transistors. NPN/PNP Silicon DPAK For Surface Mount Applications MJD (NPN), MJD (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon For Surface Mount Applications Designed for low voltage, lowpower, highgain audio amplifier applications. Features High DC Current

More information

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3. Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3. Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k MUN, MMUNL, MUN5, DTCEE, DTCEM, NSBCEF Digital Transistors (BRT) R =. k, R =. k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single

More information

BC846, BC847, BC848. General Purpose Transistors. NPN Silicon

BC846, BC847, BC848. General Purpose Transistors. NPN Silicon General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT323 which is designed for low power surface mount applications.

More information

MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G. SWITCHMODE Power Rectifier ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS

MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G. SWITCHMODE Power Rectifier ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS MUR20CTRG, MURB20CTRG, NRVUB20CTRT4G SWITCHMODE Power Rectifier These state of the art devices are designed for use in negative switching power supplies, inverters and as free wheeling diodes. lso, used

More information

MSR860G, MSRF860G. Switch-mode Soft Recovery Power Rectifiers. Plastic TO 220 Package SOFT RECOVERY POWER RECTIFIER 8.0 AMPERES, 600 VOLTS

MSR860G, MSRF860G. Switch-mode Soft Recovery Power Rectifiers. Plastic TO 220 Package SOFT RECOVERY POWER RECTIFIER 8.0 AMPERES, 600 VOLTS MSRG, MSRFG Switch-mode Soft Recovery Power Rectifiers Plastic TO Package These state of the art devices are designed for use as free wheeling diodes in variable speed motor control applications and switching

More information

MBRB1045G MBRD1045G, SBRB1045G, SBRD81045T4G. SWITCHMODE Schottky Power Rectifier. Surface Mount Power Package

MBRB1045G MBRD1045G, SBRB1045G, SBRD81045T4G. SWITCHMODE Schottky Power Rectifier. Surface Mount Power Package MBRB5G, MBRD5G, SBRB5G, SBRD85TG Preferred Device SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal

More information

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface

More information

MJD (NPN) MJD (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC C/W Thermal Resistance, Junction

MJD (NPN) MJD (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC C/W Thermal Resistance, Junction MJD (NPN) MJD (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon For Surface Mount Applications Designed for low voltage, low power, high gain audio amplifier applications. Features Collector

More information

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for

More information

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current

More information

MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W

MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners

More information

MJE243G (NPN), MJE253G (PNP) Complementary Silicon Power Plastic Transistors 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS

MJE243G (NPN), MJE253G (PNP) Complementary Silicon Power Plastic Transistors 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS MJE24G (NPN), MJE25G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and lowcurrent, highspeed switching applications. Features High CollectorEmitter

More information

MURA105, SURA8105, MURA110, SURA8110. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS

MURA105, SURA8105, MURA110, SURA8110. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS MUR5, SUR85, MUR, SUR8 Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where

More information

MMBTA05L, MMBTA06L. Driver Transistors. NPN Silicon

MMBTA05L, MMBTA06L. Driver Transistors. NPN Silicon Driver Transistors NPN Silicon Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ0 Qualified and PPAP Capable These Devices are

More information

MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS

MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and

More information

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features High DC

More information

NJT4030P. Bipolar Power Transistors. PNP Silicon PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS

NJT4030P. Bipolar Power Transistors. PNP Silicon PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS Bipolar Power Transistors PNP Silicon Features Collector -Emitter Sustaining Voltage - V CEO(sus) =(Min)@I C =madc High DC Current Gain - h FE = (Min) @ I C =.Adc = (Min) @ I C =3.Adc Low Collector -Emitter

More information

MSR1560G, MSRF1560G SOFT RECOVERY POWER RECTIFIER 15 AMPERES, 600 VOLTS

MSR1560G, MSRF1560G SOFT RECOVERY POWER RECTIFIER 15 AMPERES, 600 VOLTS MSR56G, MSRF56G Switch-mode Soft Recovery Power Rectifier These state of the art devices are designed for boost converter or hard switched converter applications, especially for Power Factor Correction

More information

MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors DPAK For Surface Mount Applications

MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors DPAK For Surface Mount Applications MJD9, NJVMJD9T4G (PNP) MJD3, NJVMJD3T4G (NPN) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed

More information

MBR7030WTG. Switch Mode Power Rectifier SCHOTTKY BARRIER RECTIFIER 70 AMPERES, 30 VOLTS

MBR7030WTG. Switch Mode Power Rectifier SCHOTTKY BARRIER RECTIFIER 70 AMPERES, 30 VOLTS Switch Mode Power Rectifier The Switch Mode power rectifier, a state of the art device, employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features Dual Diode Construction;

More information

MJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS

MJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS MJ293 - PNP MJ294 - NPN Silicon Power Transistors The MJ293 (PNP) and MJ294 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners

More information

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications MJD, MJDC (NPN), MJD, MJDC (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface

More information

NSS40301MZ4. Bipolar Power Transistors 40 V, 3.0 A, Low V CE(sat) NPN Transistor NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS

NSS40301MZ4. Bipolar Power Transistors 40 V, 3.0 A, Low V CE(sat) NPN Transistor NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS NSS3MZ Bipolar Power Transistors V, 3. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage

More information

MJD122 (NPN) MJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications

MJD122 (NPN) MJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications MJD () MJD7 () Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount

More information

BC846BM3T5G. General Purpose Transistor. NPN Silicon

BC846BM3T5G. General Purpose Transistor. NPN Silicon General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter

More information

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors MJE1528, MJE15 (NPN), MJE1529, MJE151 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as highfrequency drivers in audio amplifiers. Features High Current Gain Bandwidth

More information

BCP53 Series. PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS

BCP53 Series. PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT package which is designed for medium power surface

More information

NJVMJD128T4G. NJVMJD128T4G (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications

NJVMJD128T4G. NJVMJD128T4G (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications MJD8TG, NJVMJD8TG (PNP) Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Monolithic Construction

More information

MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = k

MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = k MUN226, MMUN226L, MUN526, DTC4TE, DTC4TM, NSBC4TF Digital Transistors (BRT) R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace

More information

MMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon

MMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon MMBT648LTG, MMBT649LTG, NSVMMBT649LTG Amplifier Transistors NPN Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and

More information

BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series

BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed

More information

MURA215T3G SURA8215T3G MURA220T3G SURA8220T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 2 AMPERES, VOLTS

MURA215T3G SURA8215T3G MURA220T3G SURA8220T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 2 AMPERES, VOLTS MURTG, SUR8TG, MURTG, SUR8TG Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface

More information

NSS12200WT1G. 12 V, 2 A, Low V CE(sat) PNP Transistor. 12 VOLTS 2.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 163 m

NSS12200WT1G. 12 V, 2 A, Low V CE(sat) PNP Transistor. 12 VOLTS 2.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 163 m NSS22WTG 2, 2 A, Low CE(sat) PNP Transistor ON Semiconductor s e 2 PowerEdge family of low CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( CE(sat) ) and

More information

2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors

2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors 2N6487, 2N6488 (), 2N649, 2N6491 () Complementary Silicon Plastic Power Transistors These devices are designed for use in generalpurpose amplifier and switching applications. Features High DC Current Gain

More information

NSV1C301ET4G. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS 12.5 WATTS NPN LOW V CE(sat) TRANSISTOR

NSV1C301ET4G. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS 12.5 WATTS NPN LOW V CE(sat) TRANSISTOR NSSC3ET4G, 3. A, Low CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low CE(sat) transistors are surface mount devices featuring ultra low saturation voltage ( CE(sat) ) and high current

More information

MURA130T3G SURA8130T3G MURA140T3G SURA8140T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS

MURA130T3G SURA8130T3G MURA140T3G SURA8140T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS MURTG, SUR8TG, MURTG, SUR8TG Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface

More information

NPN - MPS8099; PNP - MPS8599. Amplifier Transistors. Voltage and Current are Negative for PNP Transistors. MAXIMUM RATINGS

NPN - MPS8099; PNP - MPS8599. Amplifier Transistors. Voltage and Current are Negative for PNP Transistors.  MAXIMUM RATINGS - MPS899; - MPS8599 Amplifier Transistors Voltage and Current are Negative for Transistors COLLECTOR 3 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 8 CollectorBase

More information

2N5194G, 2N5195G. Silicon PNP Power Transistors 4 AMPERE POWER TRANSISTORS PNP SILICON VOLTS

2N5194G, 2N5195G. Silicon PNP Power Transistors 4 AMPERE POWER TRANSISTORS PNP SILICON VOLTS , Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Features Complement to NPN 2N5191, 2N5192 These Devices are PbFree

More information

NSS60601MZ4. 60 V, 6.0 A, Low V CE(sat) NPN Transistor. 60 VOLTS, 6.0 AMPS 2.0 WATTS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 50 m

NSS60601MZ4. 60 V, 6.0 A, Low V CE(sat) NPN Transistor. 60 VOLTS, 6.0 AMPS 2.0 WATTS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 50 m NSS66MZ 6 V, 6. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (V CE(sat) ) and high

More information

MMBT5087L. Low Noise Transistor. PNP Silicon

MMBT5087L. Low Noise Transistor. PNP Silicon Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable These Devices are PbFree,

More information

NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω

NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω NJX67PDR2G Complementary 3, 6. A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications

More information

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site

More information

MJ21195G - PNP MJ21196G - NPN. Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON- POWER TRANSISTORS 250 VOLTS, 250 WATTS

MJ21195G - PNP MJ21196G - NPN. Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON- POWER TRANSISTORS 250 VOLTS, 250 WATTS MJ295G - PNP MJ296G - NPN Silicon Power Transistors The MJ295G and MJ296G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear

More information

MJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors

MJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors MJW3281A (NPN) MJW132A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW132A are PowerBase power transistors for high power audio, disk head positioners and other linear

More information

SNSS35200MR6T1G. 35 V, 5 A, Low V CE(sat) PNP Transistor. 35 VOLTS 5.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 100 m

SNSS35200MR6T1G. 35 V, 5 A, Low V CE(sat) PNP Transistor. 35 VOLTS 5.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 100 m 35 V, 5 A, Low V CE(sat) PNP Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat) ) and

More information

BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES

BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low

More information

MJD112 (NPN) MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications

MJD112 (NPN) MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications MJD (NPN) MJD7 (PNP) Complementary Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching

More information

Vdc. Vdc. W W/ C T J, T stg 65 to +200 C P D

Vdc. Vdc. W W/ C T J, T stg 65 to +200 C P D MJ141 (PNP), MJ142* (NPN), MJ143* (PNP) *Preferred Devices HighCurrent Complementary Silicon Power Transistors Designed for use in highpower amplifier and switching circuit applications. Features High

More information

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS Plastic Medium-Power Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500 (Typ) @ I C = 4.0 Adc CollectorEmitter

More information

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors

More information

MJE15034 NPN, MJE15035 PNP

MJE15034 NPN, MJE15035 PNP MJE153 NPN, MJE1535 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO22, NPN & PNP Devices Complementary silicon plastic power transistors are designed for use as highfrequency drivers

More information

MBR2045EMFST3G NRVB2045EMFST3G. Switch-mode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 45 VOLTS

MBR2045EMFST3G NRVB2045EMFST3G. Switch-mode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 45 VOLTS MBR045EMFS, NRVB045EMFS Switch-mode Power Rectifiers These state of the art devices have the following features: Features Low Power Loss / High Efficiency New Package Provides Capability of Inspection

More information

MUN5311DW1T1G Series.

MUN5311DW1T1G Series. MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single

More information

NJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

NJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS NJW21193G (PNP) NJW2119G (NPN) Silicon Power Transistors The NJW21193G and NJW2119G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners

More information

BC846ALT1G Series. General Purpose Transistors. NPN Silicon Features

BC846ALT1G Series. General Purpose Transistors. NPN Silicon Features BC846ALTG Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: ESD Rating Human Body Model: >4 V ESD Rating Machine Model: >4 V S and NSV Prefix for Automotive and Other

More information

MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon

MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon MMBT2222AWTG, SMMBT2222AWTG General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC7 package which is designed

More information

BC856ALT1 Series. PNP Silicon. Pb Free Packages are Available. Features. MAXIMUM RATINGS (T A = 25 C unless otherwise noted)

BC856ALT1 Series. PNP Silicon. Pb Free Packages are Available. Features.   MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit Collector-Emitter oltage BC856

More information

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L. General Purpose Transistors. NPN Silicon

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L. General Purpose Transistors. NPN Silicon BC87-6L, SBC87-6L, BC87-25L, SBC87-25L, BC87-4L, SBC87-4L General Purpose Transistors NPN Silicon Features S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change

More information

MJE243 - NPN, MJE253 - PNP

MJE243 - NPN, MJE253 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and lowcurrent, highspeed switching applications. Features High CollectorEmitter

More information

Adc. W W/ C T J, T stg 65 to C

Adc. W W/ C T J, T stg 65 to C Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for generalpurpose amplifier and low frequency switching applications. Features High DC Current Gain h FE =

More information

MM3Z2V4T1 SERIES. Zener Voltage Regulators. 200 mw SOD 323 Surface Mount

MM3Z2V4T1 SERIES. Zener Voltage Regulators. 200 mw SOD 323 Surface Mount Zener Voltage Regulators mw Surface Mount This series of Zener diodes is packaged in a surface mount package that has a power dissipation of mw. They are designed to provide voltage regulation protection

More information

BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) Darlington Complementary Silicon Power Transistors

BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) Darlington Complementary Silicon Power Transistors BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching

More information

MBRM130LT1G NRVBM130LT1G MBRM130LT3G. NRVBM130LT3G Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package

MBRM130LT1G NRVBM130LT1G MBRM130LT3G. NRVBM130LT3G Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package MBRM13LT1G, NRVBM13LT1G, MBRM13LT3G, NRVBM13LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial

More information

MBRM120LT1G NRVBM120LT1G MBRM120LT3G. NRVBM120LT3G Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package

MBRM120LT1G NRVBM120LT1G MBRM120LT3G. NRVBM120LT3G Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package MBRM12LT1G, NRVBM12LT1G, MBRM12LT3G, NRVBM12LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial

More information

NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G. 60 V, 6.0 A, Low V CE(sat) PNP Transistor

NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G. 60 V, 6.0 A, Low V CE(sat) PNP Transistor NSS66MZ, NSV66MZTG, NSV66MZT3G 6 V, 6. A, Low V CE(sat) PNP Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage

More information

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device

More information

MBR3045. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 45 VOLTS

MBR3045. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 45 VOLTS MBR5 SWITCHMODE Power Rectifier Features and Benefits Dual Diode Construction Terminals 1 and May Be Connected for Parallel Operation at Full Rating 5 Blocking oltage Total (15 Per Diode Leg) Low Forward

More information

NSS40201LT1G NSV40201LT1G. 40 V, 2.0 A, Low V CE(sat) NPN Transistor. 40 VOLTS, 2.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m

NSS40201LT1G NSV40201LT1G. 40 V, 2.0 A, Low V CE(sat) NPN Transistor. 40 VOLTS, 2.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m NSS42LTG, NSV42LTG 4 V, 2. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage

More information

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors EMCDXV5TG, EMCDXV5TG, EMCDXV5TG, EMC5DXV5TG Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor

More information

2N3055, MJ2955. Complementary Silicon Power Transistors 15 A POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 W

2N3055, MJ2955. Complementary Silicon Power Transistors 15 A POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 W N355, MJ955 Preferred Device Complementary Silicon Power Transistors...designed for generalpurpose switching and amplifier applications. DC Current Gain h FE = 7 @ I C = 4 Adc CollectorEmitter Saturation

More information

MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications

MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications MJD, NJVMJD (NPN), MJD7, NJVMJD7 (PNP) Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead

More information

NSS1C201L, NSV1C201L. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS NPN LOW V CE(sat) TRANSISTOR

NSS1C201L, NSV1C201L. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS NPN LOW V CE(sat) TRANSISTOR NSSCL, NSVCL V,. A, Low V CE(sat) NPN Transistor ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat)

More information