NCP803. Very Low Supply Current 3 Pin Microprocessor Reset Monitor
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1 ery Low Supply Current Pin Microprocessor Reset Monitor The NCP8 is a costeffective system supervisor circuit designed to monitor in digital systems and provide a reset signal to the host processor when necessary. No external components are required. The reset output is driven active within 1 sec of falling through the reset voltage threshold. Reset is maintained active for a minimum of 14 msec after rises above the reset threshold. The NCP8 has an open drain activelow RESET output. The output of the NCP8 is guaranteed valid down to = 1. and is available in a SOT2 package. The NCP8 is optimized to reject fast transient glitches on the line. Low supply current of 1. A ( =.2 ) make this device suitable for battery powered applications. Features Precision Monitor for 2.5,.,., and 5. Supplies Precision Monitoring oltages from 1.6 to 4.9 Available in 1 m Steps 14 msec Guaranteed Minimum RESET Output Duration RESET Output Guaranteed to = 1. Low 1. µa Supply Current Transient Immunity Small SOT2 Package No External Components Wide Operating Temperature: 4 C to 15 C PbFree Packages are Available Typical Applications Computers Embedded Systems Battery Powered Equipment Critical µp Power Supply Monitoring 1 2 xxx M RESET SOT2 (TO26) CASE 18 PIN CONFIGURATION 1 2 ORDERING INFORMATION Device Package Shipping NCP8SNxxxT1 SOT2 /Tape & Reel SOT2 (Top iew) NOTE: SOT2 is equivalent to JEDEC (TO26) NCP8SNxxxT1G MARKING DIAGRAM xxxm 1 2 = Specific Device Code = Date Code = PbFree Package SOT2 (PbFree) /Tape & Reel NCP8SNxxxT SOT2 1/Tape & Reel R pullup NCP8SNxxxTG SOT2 (PbFree) 1/Tape & Reel C = 1 nf NCP8 RESET µp RESET For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD811/D. NOTE: The xxx denotes a suffix for cc voltage threshold options see page 5 for more details. Figure 1. Typical Application Diagram *The T suffix refers to a 1 inch reel. DEICE MARKING INFORMATION See general marking information in the device marking section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 25 April, 25 Rev. 5 1 Publication Order Number: NCP8/D
2 PIN DESCRIPTION Pin No. Symbol Description ÁÁÁÁ 1 ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Ground ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ 2 RESET ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ RESET output remains low while is below the reset voltage threshold, and for 24 msec (typ.) ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ after rises above reset threshold. ÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Supply oltage: C = 1 nf is recommended as a bypass capacitor between and. ABSOLUTE MAXIMUM RATINGS (Note 1) Rating Symbol alue Unit Supply oltage ( to ) 6. RESET. to ( +.) Input Current, 2 ma Output Current, RESET 2 ma d/dt ( ) 1 /µsec Thermal Resistance, Junction to Air R JA 491 C/W Operating Temperature Range T A 4 to +15 C Storage Temperature Range T stg 65 to +15 C Lead Temperature (Soldering, 1 Seconds) T sol +26 C Latchup performance: Negative I Latchup 15 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. This device series contains ESD protection and exceeds the following tests: Human Body Model 4 per MILSTD88, Method 15. Machine Model Method The maximum package power dissipation limit must not be exceeded. PD T J(max) TA with T J(max) = 15 C R JA ma 2
3 ELECTRICAL CHARACTERISTICS T A = 4 C to +15 C unless otherwise noted. Typical values are at. (Note ) Characteristic Symbol Min Typ Max Unit Range T A = C to +7 C T A = 4 C to +15 C Supply Current =. T A = 4 C to +85 C T A = 85 C to +15 C = 5.5 T A = 4 C to +85 C T A = 85 C to +15 C Reset Threshold (Note 4) I CC TH µa NCP8SN46 T A = 4 C to +85 C NCP8SN48 T A = 4 C to +85 C NCP8SN8 T A = 4 C to +85 C NCP8SN29 T A = 4 C to +85 C NCP8SN26 T A = 4 C to +85 C NCP8SN22 T A = 4 C to +85 C NCP8SN16 T A = 4 C to +85 C Reset Temperature Coefficient ppm/ C to Reset Delay = TH to ( TH 1 m) 1 µsec Reset Active Timeout Period msec RESET Output oltage Low = TH TH 2., I SINK =.5 ma 2.1 TH 4., I SINK = ma 4.1 TH 4.9, I SINK =.2 ma OL. RESET Leakage Current TH, RESET Deasserted I LEAK 1 µa. Production testing done at T A = 25 C, over temperature limits guaranteed by design. 4. Contact your ON Semiconductor sales representative for other threshold voltage options.
4 TYPICAL CHARACTERISTICS SUPPLY CURRENT ( A) TH = C 85 C 25 C C 4 C SUPPLY CURRENT ( A) TH =.8 15 C 85 C 25 C C 4 C SUPPLY OLTAGE () Figure 2. Supply Current vs. Supply oltage SUPPLY OLTAGE () Figure. Supply Current vs. Supply oltage SUPPLY CURRENT ( A) TH = 4.9 C 15 C 85 C 25 C 4 C NORMALIZED TH OLTAGE TH =.8 TH = TH = SUPPLY OLTAGE () Figure 4. Supply Current vs. Supply oltage TEMPERATURE ( C) Figure 5. Normalized Reset Threshold oltage vs. Temperature POWERUP RESET TIMEOUT (ms) TH = 4.9 TH =.8 TH = POWERDOWN RESET TIMEOUT ( S) 5 TH = TH =.8 5 TH = TEMPERATURE ( C) Figure 6. Powerup Reset Timeout vs. Temperature TEMPERATURE ( C) Figure 7. Powerdown Reset Timeout vs. Temperature (Overdrive = 2 m) 4
5 TAPING FORM Component Taping Orientation for L SOT2 (JEDEC26) Devices USER DIRECTION OF FEED DEICE MARKING PIN 1 Standard Reel Component Orientation (Mark Right Side Up) Tape & Reel Specifications Table Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size SOT2 8 mm 4 mm 7 inches SOT2 8 mm 4 mm 1 1 inches MARKING AND THRESHOLD INFORMATION ON Semiconductor ctor Part # TH * Marking (Note 5) NCP8SN16T1 1.6 SCQM NCP8SN16T1G 1.6 SCQM NCP8SN22T1 2.2 SQRM NCP8SN22T1G 2.2 SQRM NCP8SN26T1 2.6 SQCM NCP8SN26T1G 2.6 SQCM NCP8SN29T1 2.9 SQDM NCP8SN29T1G 2.9 SQDM NCP8SN29T 2.9 SQDM NCP8SN29TG 2.9 SQDM NCP8SN8T1.8 SQEM NCP8SN8T1G.8 SQEM NCP8SN48T1 4.8 SQFM NCP8SN48T1G 4.8 SQFM NCP8SN46T1 4.6 SQGM NCP8SN46T1G 4.6 SQGM NOTE: The G suffix indicates PbFree package available. *Contact your ON Semiconductor sales representative for other threshold voltage options. 5. M = Monthly Date Code 5
6 PACKAGE DIMENSIONS SOT2 (TO26) CASE 188 ISSUE AL A L 1 2 B S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL THRU 7 AND 9 OBSOLETE, NEW STANDARD 188. D G H C K J INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D G H J K L S STYLE 8: PIN 1. ANODE 2. NO CONNECTION. CATHODE SOLDERING FOOTPRINT* SCALE 1:1 mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6112, Phoenix, Arizona USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan 1551 Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. NCP8/D
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3-Pin Microprocessor Power Supply Supervisors Description The CAX83, CAX89, and CAX81 are supervisory circuits that monitor power supplies in digital systems. The CAX83, CAX89, and CAX81 are direct replacements
MBR120LSFT3G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS
MBR12LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction
MBR735, MBR745. SWITCHMODE Power Rectifiers. SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS
MBR735, MBR75 SWITCHMODE Power Rectifiers Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature PbFree Packages are Available*
BS107, BS107A. Small Signal MOSFET 250 mamps, 200 Volts N Channel TO ma, 200 V R DS(on) = 14 (BS107) R DS(on) = 6.
Preferred Device Small Signal MOSFET 250 mamps, 200 Volts NChannel Features PbFree Package is Available* 250 ma, 200 V R DS(on) = 14 (BS107) R DS(on) = 6.4 (BS107A) MAXIMUM RATINGS Rating Symbol Value
NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723
NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23
NTRP, NTRVP Trench Power MOSFET V, Single P Channel, SOT Features Leading V Trench for Low R DS(on). V Rated for Low Voltage Gate Drive SOT Surface Mount for Small Footprint NTRV Prefix for Automotive
1PMT5.0AT1/T3 Series. Zener Transient Voltage Suppressor POWERMITE Package
Zener Transient Voltage Suppressor Package The is designed to protect voltage sensitive components from high voltage, high energy transients. Excellent clamping capability, high surge capability, low Zener
MUN5311DW1T1G Series.
MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single
NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23
NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint
MBR120VLSFT3G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS
MBR12VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
BAV70DXV6T1, BAV70DXV6T5 Preferred Device. Monolithic Dual Switching Diode Common Cathode. Lead-Free Solder Plating.
BAV70DXV6T1, BAV70DXV6T5 Preferred Device Monolithic Dual Switching Diode Common Cathode LeadFree Solder Plating MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage V R 70 Vdc Forward
NB3N502/D. 14 MHz to 190 MHz PLL Clock Multiplier
4 MHz to 90 MHz PLL Clock Multiplier Description The NB3N502 is a clock multiplier device that generates a low jitter, TTL/CMOS level output clock which is a precise multiple of the external input reference
BC517G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Darlington Transistors NPN Silicon Features Pb Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CES 30 Collector Base Voltage V CB 40 Collector
NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m
Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package
NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
NSQA6V8AW5T2 Series Transient Voltage Suppressor
Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.
MMSZxxxET1G Series, SZMMSZxxxET1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZxxxETG Series, SZMMSZxxxETG Series Zener Voltage Regulators mw SOD Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD package. These devices
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
MBRS320T3, MBRS330T3, MBRS340T3. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry
NCP ma, 10 V, Low Dropout Regulator
15 ma, 1 V, Low Dropout Regulator The is a CMOS Linear voltage regulator with 15 ma output current capability. The device is capable of operating with input voltages up to 1 V, with high output voltage
NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8
NTMDN Power MOSFET 3 V, 7. A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual
NCP5426. LDO Regulator/Vibration Motor Driver
LDO Regulator/Vibration Motor Driver The NCP5426 series of fixed output, 15 ma low dropout linear regulators are designed to be an economical solution for a variety of applications. Each device contains
MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network
MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device
1SMA59xxBT3 Series, SZ1SMA59xxBT3G Series. 1.5 Watt Plastic Surface Mount Zener Voltage Regulators
59xxBT3 Series, SZ59xxBT3G Series.5 Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of.5 Watt Zener Diodes offers the following advantages. Features Standard Zener Breakdown
NSS12200WT1G. 12 V, 2 A, Low V CE(sat) PNP Transistor. 12 VOLTS 2.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 163 m
NSS22WTG 2, 2 A, Low CE(sat) PNP Transistor ON Semiconductor s e 2 PowerEdge family of low CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( CE(sat) ) and
NCP A, Low Dropout Linear Regulator with Enhanced ESD Protection
3.0 A, Low Dropout Linear Regulator with Enhanced ESD Protection The NCP5667 is a high performance, low dropout linear regulator designed for high power applications that require up to 3.0 A current. A
NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m
Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)
2N5400, 2N5401. PNP Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS
Preferred Device Amplifier Transistors PNP Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol 2N5400 Unit Collector Emitter Voltage V CEO 1 1 Collector Base Voltage V CBO 1 160
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) Darlington Complementary Silicon Power Transistors
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching
NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
1N5908RL4G Watt Mosorb Zener Transient Voltage Suppressors. Unidirectional*
Preferred Device 5 Watt Mosorb Zener Transient oltage Suppressors Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high-energy transients. They have
NGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4.
NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection
NL27WZ17. Dual Non-Inverting Schmitt Trigger Buffer
Dual Non-Inverting Schmitt Trigger Buffer The N7WZ7 is a high performance dual buffer operating from a to supply. At =, high impedance TT compatible inputs significantly reduce current loading to input