TO-92 SOT-23 Mark: 2A. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

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Bryan Norman
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2N396 / MMBT396 / MMPQ396 / PZT396 N Discrete POWER & Signal Technologies 2N396 MMBT396 E B E TO-92 SOT-23 Mark: 2A B MMPQ396 PZT396 E B E B E B E B

1 2N396 / MMBT396 / MMPQ396 / PZT396 N Discrete POWER & Signal Technologies 2N396 MMBT396 E B E TO-92 SOT-23 Mark: 2A B MMPQ396 PZT396 E B E B E B E B SOI-6 SOT-223 B E This device is designed for general purpose amplifier and switching applications at collector currents of µa to ma. Sourced from Process 66. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol Parameter alue Units EO ollector-emitter oltage 4 BO ollector-base oltage 4 EBO Emitter-Base oltage 5. I ollector urrent - ontinuous 2 ma T J, T stg Operating and Storage Junction Temperature Range -55 to +5 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : ) These ratings are based on a maximum junction temperature of 5 degrees. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

2 2N396 / MMBT396 / MMPQ396 / PZT396 Electrical haracteristics TA = 25 unless otherwise noted Symbol Parameter Test onditions Min Max Units OFF HARATERISTIS (BR)EO ollector-emitter Breakdown oltage* I =. ma, I B = 4 (BR)BO ollector-base Breakdown oltage I = µa, I E = 4 (BR)EBO Emitter-Base Breakdown oltage I E = µa, I = 5. I BL Base utoff urrent E = 3, BE = 3. 5 na I EX ollector utoff urrent E = 3, BE = 3. 5 na ON HARATERISTIS h FE D urrent Gain * I =. ma, E =. I =. ma, E =. I = ma, E =. I = 5 ma, E =. I = ma, E =. E(sat) ollector-emitter Saturation oltage I = ma, I B =. ma I = 5 ma, I B = 5. ma BE(sat) Base-Emitter Saturation oltage I = ma, I B =. ma I = 5 ma, I B = 5. ma SMALL SIGNAL HARATERISTIS f T urrent Gain - Bandwidth Product I = ma, E = 2, f = MHz obo Output apacitance B = 5., I E =, f = khz ibo Input apacitance EB =.5, I =, f = khz NF Noise Figure (except MMPQ396) I = µa, E = 5., R S =.kω, f= Hz to 5.7 khz 25 MHz 4.5 pf. pf 4. db SWITHING HARATERISTIS (except MMPQ396) t d Delay Time = 3., BE =.5, 35 ns t r Rise Time I = ma, I B =. ma 35 ns t s Storage Time = 3., I = ma 225 ns t f Fall Time I B = I B2 =. ma 75 ns *Pulse Test: Pulse Width 3 µs, Duty ycle 2.% Spice Model PNP (Is=.4f Xti=3 Eg=. af=8.7 Bf=8.7 Ne=.5 Ise= Ikf=8m Xtb=.5 Br=4.977 Nc=2 Isc= Ikr= Rc=2.5 jc=9.728p Mjc=.5776 jc=.75 Fc=.5 je=8.63p Mje=.3677 je=.75 Tr=33.42n Tf=79.3p Itf=.4 tf=4 Xtf=6 Rb=)

3 2N396 / MMBT396 / MMPQ396 / PZT396 Thermal haracteristics TA = 25 unless otherwise noted Symbol haracteristic Max Units 2N396 *PZT396 P D Total Device Dissipation Derate above , 8. mw mw/ R q J Thermal Resistance, Junction to ase 83.3 /W R q JA Thermal Resistance, Junction to Ambient 2 25 /W Symbol haracteristic Max Units P D R q JA Total Device Dissipation Derate above 25 Thermal Resistance, Junction to Ambient Effective 4 Die Each Die **MMBT *Device mounted on FR-4 PB 36 mm X 8 mm X.5 mm; mounting pad for the collector lead min. 6 cm 2. **Device mounted on FR-4 PB.6" X.6" X.6." MMPQ396, mw mw/ /W /W /W Typical haracteristics h - TYPIAL PULSED URRENT GAIN FE Typical Pulsed urrent Gain vs ollector urrent ce = I - OLLETOR URRENT (ma) ESAT ollector-emitter Saturation oltage vs ollector urrent β = 25 º 25-4 º 2 I - OLLETOR URRENT (ma) - BASE EMITTER OLTAGE () BESAT Base-Emitter Saturation oltage vs ollector urrent β = - 4 º º 2 I - OLLETOR URRENT (ma) - BASE EMITTER ON OLTAGE () BEON Base Emitter ON oltage vs ollector urrent - 4 º º E =. 25 I - OLLETOR URRENT (ma)

4 2N396 / MMBT396 / MMPQ396 / PZT396 Typical haracteristics I - OLLETOR URRENT (na) BO. ollector-utoff urrent vs. Ambient Temperature = 25 B T A- AMBIENT TEMPERATURE ( ) º APAITANE (pf) ommon-base Open ircuit Input and Output apacitance vs Reverse Bias oltage obo ibo. REERSE BIAS OLTAGE () NF - NOISE FIGURE (db) Noise Figure vs Frequency = 5. E I = µa, R S = 2 Ω I =. ma, R = 2 Ω S I = µa, R = 2. k Ω S. f - FREQUENY (khz) NF - NOISE FIGURE (db) Noise Figure vs Source Resistance I =. ma I = µa E= 5. f =. khz. R S - SOURE RESISTANE ( kω) 5 Switching Times vs ollector urrent 5 Turn On and Turn Off Times vs ollector urrent TIME (ns) t r I c I B= I B2= t d I - OLLETOR URRENT (ma) t s t f TIME (ns) I c t on I B = =.5 BE(OFF) I c t off I B= I B2= t off t on I - OLLETOR URRENT (ma)

5 2N396 / MMBT396 / MMPQ396 / PZT396 Typical haracteristics Power Dissipation vs Ambient Temperature P - POWER DISSIPATION (W) D TO-92 SOT-23 SOT o TEMPERATURE ( )

MMBT2907A. SOT-23 Mark: 2F. SOT-6 Mark:.2B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

MMBT2907A. SOT-23 Mark: 2F. SOT-6 Mark:.2B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units B E PN297A TO-92 MMPQ297 E B E B E B E B SOI-6 MMBT297A This device is designed for use as a general purpose amplifier and switch requiring collector currents to 5 ma. Sourced from Process 63. SOT-23 Mark: