B C. absolute maximum ratings at 25 C case temperature (unless otherwise noted) OBSOLETE

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1 ,,, 40 W at 25 C Case Temperature A Continuous Collector Current 2 A Peak Collector Current 20 mj Reverse-Energy Rating B C TO-220 PACKAGE (TOP IEW) 2 This series is obsolete and not recommended for new designs. E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25 C case temperature (unless otherwise noted) RATING SYMBOL ALUE UNIT Collector-base voltage (I E = 0) CBO Collector-emitter voltage (I B = 0) 300 CEO Emitter-base voltage EBO 5 Continuous collector current A Peak collector current (see Note ) ICM 2 A Continuous base current I B 0.6 A Continuous device dissipation at (or below) 25 C case temperature (see Note 2) Ptot 40 W Continuous device dissipation at (or below) 25 C free air temperature (see Note 3) Ptot 2 W Unclamped inductive load energy (see Note 4) ½LIC 2 20 mj Operating junction temperature range Tj -65 to +50 C Storage temperature range T stg -65 to +50 C Lead temperature 3.2 mm from case for 0 seconds TL 260 C NOTE : This value applies for ms, duty cycle 2%. 2. Derate linearly to 50 C case temperature at the rate of 0.32 W/ C. 3. Derate linearly to 50 C free air temperature at the rate of 6 mw/ C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mh, I B(on) = 0.4 A, R BE = 00 Ω, BE(off) = 0, R S = 0. Ω, CC = 20. DECEMBER 97 - REISED SEPTEMBER 2002

2 ,,, electrical characteristics at 25 C case temperature PARAMETER TESONDITIONS MIN TYP MAX UNIT 250 (BR)CEO Collector-emitter 300 I breakdown voltage C = 30 ma I B = 0 (see Note 5) CE = BE =0 ES Collector-emitter CE = BE =0 cut-off current CE =450 BE =0 ma CE =500 BE =0 CE =50 I B =0 EO Collector cut-off CE = 200 I B =0 current CE =250 I B =0 ma CE = 300 I B =0 I EBO Emitter cut-off current EB = 5 =0 ma h FE Forward current CE = 0 =0.3A (see Notes 5 and 6) transfer ratio CE = 0 = A 0 CE(sat) Collector-emitter saturation voltage I B = 0.2 A = A (see Notes 5 and 6) BE Base-emitter voltage CE = 0 = A (see Notes 5 and 6).5 h fe Small signal forward current transfer ratio CE = 0 = 0.2 A f = khz 25 h fe Small signal forward current transfer ratio CE = 0 = 0.2 A f = 2 MHz 5 NOTES: 5. These parameters must be measured using pulse techniques, = 300 µs, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. resistive-load-switching characteristics at 25 C case temperature PARAMETER TESONDITIONS MIN TYP MAX UNIT t on Turn on time = A I B(on) = 0. A I B(off) = -0. A 0.2 µs t off Turn off time BE(off) = -5 R L = 200 Ω (see Figures and 2) 2 µs oltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 DECEMBER 97 - REISED SEPTEMBER 2002

3 ,,, PARAMETER MEASUREMENT +25 T BD35 20 Ω 680 µ F 00 Ω 47 Ω 00 µf cc = CC Ω TUT = 20 µs Duty cycle = % = 5, Source Impedance = 50 Ω A - B = t d B - C = t r E - F = t f D - E = t s A - C = t on D - F = t off 00 Ω BD36 82 Ω 680 µ F Figure. Resistive-Load Switching Test Circuit I B B C 0% D 0% E F I B(on) 0% di B 2 A/µs dt A 0% 0% I B(off) Figure 2. Resistive-Load Switching Waveforms DECEMBER 97 - REISED SEPTEMBER

4 ,,, TYPICAL CHARACTERISTICS h FE - Typical DC Current Gain TYPICAL DC CURRENT GAIN CE = TCP770AA COLLECTOR-EMITTER SATURATION OLTAGE Figure 3. Figure 4. BE(sat) - Base-Emitter Saturation oltage - CE(sat) - Collector-Emitter Saturation oltage / I B = 5 BASE-EMITTER SATURATION OLTAGE CE = 0 TCP770AC TCP770AB Figure 5. 4 DECEMBER 97 - REISED SEPTEMBER 2002

5 ,,, MAXIMUM SAFE OPERATING REGIONS 0 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA SAP770AA 0 0. = 00 µs = 500 µs = ms DC Operation CE - Collector-Emitter oltage - Figure 6. DECEMBER 97 - REISED SEPTEMBER