TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS

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1 , Rugged Triple-Diffused Planar Construction 4 A Continuous Collector Current Operating Characteristics Fully Guaranteed at 0 C 1200 olt Blocking Capability 75 W at 25 C Case Temperature B C E TO-220 PACKAGE (TOP IEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25 C case temperature (unless otherwise noted) Collector-base voltage (I E = 0) voltage ( BE = 0) NOTE 1: This value applies for ms, duty cycle 2%. RATING SYMBOL ALUE UNIT CBO CES voltage ( 0) 0 CEO 5 Emitter-base voltage EBO Continuous collector current 4 A Peak collector current (see Note 1) M 8 A Continuous device dissipation at (or below) 25 C case temperature P tot 75 W Operating junction temperature range T j -65 to +1 C Storage temperature range T stg -65 to +1 C MAY REISED SEPTEMBER

2 , electrical characteristics at 25 C case temperature (unless otherwise noted) PARAMETER TESONDITIONS MIN TYP MAX UNIT 0 CEO(sus) I sustaining voltage C = ma L = 25 mh (see Note 2) 5 ES EO I EBO h FE CE(sat) BE(sat) cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio saturation voltage Base-emitter saturation voltage CE = 10 CE = 1200 CE = 10 CE = 1200 CE = 0 CE = 5 BE =0 BE =0 BE =0 BE =0 0 0 = 0 C = 0 C EB = =0 1 ma CE = 5 = 0.5 A (see Notes 3 and 4) A 0.4 A = = = = = = 2A 2A 3 A (see Notes 3 and 4) = 0 C (see Notes 3 and 4) = 0 C Current gain f t bandwidth product CE = = 0.5 A f = 1 MHz 12 MHz C ob Output capacitance CB = 20 I E = 0 f = 0.1 MHz 1 pf NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, = 300 µs, duty cycle 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts µa µa thermal characteristics PARAMETER MIN TYP MAX UNIT R θjc Junction to case thermal resistance 1.56 C/W inductive-load-switching characteristics at 25 C case temperature (unless otherwise noted) PARAMETER TESONDITIONS MIN TYP MAX UNIT t sv oltage storage time 2.5 µs t rv oltage rise time 300 ns = 3 A t fi Current fall time I BE(off) = -5 B(on) = (see Figures 1 and 2) 2 ns t ti Current tail time 1 ns t xo Cross over time 400 ns t sv oltage storage time 3 µs t rv oltage rise time 0 ns = 3 A (on) = t fi Current fall time (see Figures 1 and 2) 2 ns BE(off) = -5 = 0 C t ti Current tail time 1 ns t xo Cross over time 7 ns oltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 MAY REISED SEPTEMBER 2002

3 , PARAMETER MEASUREMENT 33 Ω +5 D45H11 Gen 68 Ω 1 pf Ω 2N2222 RB (on) 0.02 µf TUT 180 µh v cc clamp = Ω 5X 2N2904 Adjusw to obtain For < 6 A CC = For 6 A CC = 0 47 Ω 0 Ω D44H11 BE(off) Figure 1. Inductive-Load Switching Test Circuit (on) A (90%) A - B = t sv Base Current B - C = t rv D - E = t fi E - F = t ti B - E = t xo C 90% CE B % Collector oltage D (90%) E (%) (on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, R in > Ω, C in < 11.5 pf. B. Resistors must be noninductive types. Figure 2. Inductive-Load Switching Waveforms MAY REISED SEPTEMBER

4 , TYPICAL CHARACTERISTICS h FE - Typical DC Current Gain 0 TYPICAL DC CURRENT GAIN COLLECTOR CURRENT TCP741AA = 125 C = -65 C CE = 5 CE(sat) - Collector-Emitter Saturation oltage - COLLECTOR-EMITTER SATURATION OLTAGE BASE CURRENT TCP741AB = 0 C = 4 A = 3 A = 2 A = 1 A Collector Current - A Base Current - A Figure 3. Figure 4. BE(sat) - Base-Emitter Saturation oltage BASE-EMITTER SATURATION OLTAGE BASE CURRENT TCP741AC = 4 A 0 85 = 3 A = 2 A = 1 A Base Current - A ES - Collector Cut-off Current - µa 0 1 COLLECTOR CUT-OFF CURRENT CASE TEMPERATURE CE = 1200 CE = 10 TCP741AO Case Temperature - C Figure 5. Figure 6. 4 MAY REISED SEPTEMBER 2002

5 , MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA SAP741AF - Collector Current - A 0.1 = µs = 0 µs = 1 ms = ms DC Operation 0 00 CE - Collector-Emitter oltage - Figure 7. THERMAL Z θjc /R θjc - Normalised Transient Thermal Impedance THERMAL RESPONSE JUNCTION TO CASE POWER PULSE DURATION 0 1 % 20% % 5% 0% duty cycle = t1/t2 Read time at end of t1, T J(max) - = P D(peak) t1 - Power Pulse Duration - s Figure 8. t1 t2 Z ( θjc R θjc ) TCP741AM R θjc(max) MAY REISED SEPTEMBER