BUL791 NPN SILICON POWER TRANSISTOR

Transcription

1 Designed Specifically for High Frequency Electronic Ballasts up to 15 W h FE 6 to at = 1 V, Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature Tight and Reproducible Parametric Distributions B C E TO-0 PACKAGE (TOP VIEW) 1 3 Pin is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 5 C ambient temperature (unless otherwise noted ) RATING SYMBOL VALUE UNIT Collector-emitter voltage (V BE = 0) S 700 V Collector-base voltage (I E = 0) V CBO 700 V Collector-emitter voltage (I B = 0) O 400 V Emitter-base voltage V EBO 9 V Continuous collector current 4 A Peak collector current (see Note 1) M 8 A Peak collector current (see Note ) M 14 A Continuous base current I B.5 A Peak base current (see Note ) I BM 3.5 A Continuous device dissipation at (or below) 5 C case temperature P tot 75 W Operating junction temperature range T j -65 to +150 C Storage temperature range T stg -65 to +150 C NOTES: 1. This value applies for = ms, duty cycle %.. This value applies for = 300 µs, duty cycle %. 1

2 electrical characteristics at 5 C case temperature (unless otherwise noted) PARAMETER TESONDITIONS MIN TYP MAX UNIT O(sus) Collector-emitter sustaining voltage = 0 ma L = 5 mh (see Note 3) 400 V ES Collector-emitter =700 V V BE =0 cut-off current =700 V V BE =0 = 90 C 00 µa I EBO Emitter cut-off current V EB = 9 V =0 1 ma V BE(sat) Base-emitter I B = 400 ma (see Notes 4 and 5) saturation voltage I B = 400 ma = 90 C 0.86 V (sat) Collector-emitter I B = 400 ma (see Notes 4 and 5) saturation voltage I B = 400 ma = 90 C 0.3 V h FE = 1 V = ma 16.5 Forward current = 1 V 6 1 transfer ratio = 5 V = 8 A V FCB Collector-base forward bias diode voltage B = 60 ma 850 mv NOTES: 3. Inductive loop switching measurement. 4. These parameters must be measured using pulse techniques, = 300 µs, duty cycle %. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located within 3. mm from the device body. thermal characteristics PARAMETER MIN TYP MAX UNIT R θja Junction to free air thermal resistance 6.5 C/W R θjc Junction to case thermal resistance 1.66 C/W inductive-load switching characteristics at 5 C case temperature PARAMETER TESONDITIONS MIN TYP MAX UNIT Storage time. 3 µs = A = 400 ma V CC = 40 V Current fall time ns = 800 ma V CLAMP t xo Cross over time 300 ns Storage time = A = 400 ma V CC = 40 V 4 6 µs Current fall time = 50 ma V CLAMP ns resistive-load switching characteristics at 5 C case temperature PARAMETER TESONDITIONS MIN TYP MAX UNIT Storage time = A =400 ma. 3 µs Current fall time V CC =400 ma ns

3 TYPICAL CHARACTERISTICS h FE - Forward Current Transfer Ratio 30 FORWARD CURRENT TRANSFER RATIO L791CHF = 1 V = 5 V 0 (sat) - Collector-Emitter Saturation Voltage - V COLLECTOR-EMITTER SATURATION VOLTAGE I B = 90 C L791CVB Figure 1. Figure. /.5 V CC = 40 V V CLAMP L791CI1 t xo = 40 V, = 800 ma, V CLAMP, L791CI Figure 3. Figure 4. 3

4 TYPICAL CHARACTERISTICS / 8 V CC = 40 V V CLAMP L791CI = 40 V, = 50 ma, V CLAMP, L791CI Figure 5. Figure 6. RESISTIVE SWITCHING TIMES, V CC, L791CR1 RESISTIVE SWITCHING TIMES = 400 ma, L791CR Resistive Switching Time - µs Resistive Switching Time - µs Figure 7. Figure 8. 4

5 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA L791CFB = µs = 0 µs = 1 ms = ms DC Operation Collector-Emitter Voltage - V MAXIMUM REVERSE-BIAS SAFE OPERATING AREA L791CRB V BE(off) = -5 V Collector-Emitter Voltage - V Figure 9. Figure. 5