General Purpose Transistor

Transcription

1 NPN Silicon RoHS product for packing code suffix "G", Halogen free product for packing code suffix "H". MAXIMUM RATINGS Rating Symbol A Unit Collector Emitter Voltage O 3 4 Vdc SOT 23 Collector Base Voltage V CBO 6 75 Vdc Emitter Base Voltage V EBO Vdc Collector Current Continuous 6 6 madc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR 5 Board, (1) P D 225 mw T A Derate above 25 C 1.8 mw/ C Thermal Resistance, Junction to Ambient R θja 556 C/W Total Device Dissipation P D 3 mw Alumina Substrate, (2) T A Derate above 25 C 2.4 mw/ C Thermal Resistance, Junction to Ambient R θja 417 C/W Junction and Storage Temperature, T stg 55 to +15 C 1 BASE 3 COLLECTOR 2 EMITTER ORDERING INFORMATION Device Marking Shipping MMBT2222LT1 M1B 3/Tape & Reel MMBT2222ALT1 1P 3/Tape & Reel DEVICE MARKING MMBT2222LT1= M1B ; MMBT2222ALT1 = 1P ELECTRICAL CHARACTERISTICS (T A unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage MMBT2222 V (BR)CEO 3 Vdc ( = madc, I B = ) MMBT2222A 4 Collector Base Breakdown Voltage MMBT2222 V (BR)CBO 6 Vdc ( = µadc, I E = ) MMBT2222A 75 Emitter Base Breakdown Voltage MMBT2222 V (BR)EBO 5. Vdc (I E = µadc, = ) MMBT2222A 6. Collector Cutoff Current MMBT2222A EX nadc ( = 6 Vdc, I EB(off) = 3.Vdc) Collector Cutoff Current BO µadc (V CB = 5 Vdc, I E = ) MMBT (V CB = 6 Vdc, I E = ) MMBT2222A.1 (V CB = 5 Vdc, I E =, T A = 125 C) MMBT2222 (V CB = 6 Vdc, I E =, T A = 125 C) MMBT2222A Emitter Cutoff Current (V EB = 3. Vdc, = ) MMBT2222A I EBO nadc Base Cutoff Current ( = 6 Vdc, V EB(off) = 3. Vdc) MMBT2222A I BL 2 nadc 1. FR 5 = 1. x.75 x.62 in. 2. Alumina =.4 x.3 x.24 in. 99.5% alumina.

2 ELECTRICAL CHARACTERISTICS (T A unless otherwise noted) (Continued) ON CHARACTERISTICS Characteristic Symbol Min Max Unit DC Current Gain h FE ( =.1 madc, = Vdc) 35 ( = 1. madc, = Vdc) 5 ( = madc, = Vdc) 75 ( = madc, = Vdc,T A = 55 C ) MMBT2222A only 35 ( = 15 madc, = Vdc) (3) 3 ( = 15 madc, = 1. Vdc) (3) 5 ( = 5 madc, = Vdc)(3) MMBT MMBT2222A 4 Collector Emitter Saturation Voltage(3) (sat) Vdc ( = 15 madc, I B = 15 madc) MMBT MMBT2222A.3 ( = 5mAdc, I B = 5 madc) MMBT MMBT2222A 1. Base Emitter Saturation Voltage V BE(sat) Vdc ( = 15 madc, I B = 15 madc) MMBT MMBT2222A ( = 5 madc, I B = 5 madc) MMBT SMALL SIGNAL CHARACTERISTICS MMBT2222A 2. Current Gain Bandwidth Product(4) MMBT2222 f T 25 MHz ( = 2mAdc, = 2Vdc, f = MHz) MMBT2222A 3 Output Capacitance(V CB = Vdc, I E =, f = 1. MHz) C obo 8. pf Input Capacitance MMBT2222 C ibo 3 pf (V EB =.5 Vdc, =, f = 1. MHz) MMBT2222A 25 Input Impedance( = Vdc, = 1. madc, f = 1. khz) MMBT2222A h ie kω ( = Vdc, = madc, f = 1. khz) MMBT2222A Voltage Feedback Ratio( = Vdc, = 1.mAdc, f =1.kHz) MMBT2222A h re - 8. X 4 ( = Vdc, = madc, f = 1. khz) MMBT2222A 4. Small Signal Current Gain( =Vdc, =1.mAdc, f=1.khz) MMBT2222A h fe 5 3 ( = Vdc, = madc, f = 1. khz) MMBT2222A Output Admittance( = Vdc, = 1. madc,f =1. khz) MMBT2222A h oe µmhos ( = Vdc, = madc, f = 1. khz) MMBT2222A 25 2 Curren Base Time Comstant (V CB = 2 Vdc, I E = 2 madc, f = 31.8 MHz) MMBT2222A rb, C C 15 ps Noise Figure( =Vdc, =µadc, R S =1.kΩ, f =1.kHz) MMBT2222A NF 4. db SWITCHING CHARACTERISTICS Delay Time (V CC = 3 Vdc, V EB(off) =.5 Vdc t d Rise Time = 15 madc, I B1 = 15 madc) t r 25 ns Storage Time (V CC = 3 Vdc, = 15 madc t s 225 ns Fall Time I B1 = I B2 = 15 madc) t f 6 3. Pulse Test: Pulse Width <3 µs, Duty Cycle <2.%. 4.f T is defined as the frequency at which h fe extrapolates to unity.

3 SWITCHING TIME EQUIVALENT TEST CIRCUITS +3 V 1. to µs, 1. to µs, V DUTY CYCLE ~ 2% + 16 V DUTY CYCLE ~ 2% 1. k 1. k C S * < pf 14 V 2.V <2. ns < 2 ns 1N V 2 C S *< pf 4. V Scope rise time < 4.ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn On Time Figure 2. Turn Off Time h FE, DC CURRENT GAIN = V =1. V = +125 C +25 C 55 C k, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain ma 5mA ma.4 =1. ma I B, BASE CURRENT (ma) Figure 4. Collector Saturation Region

4 t, TIME (ns) /I B = t CC = 3V t EB(off) = 2.V t EB(off) = t, RISE TIME (ns) t s = t s 1/8 t f t f V CC = 3V / I B = I B1 = I B Figure 5. Turn On Time Figure 6. Turn - Off Time NF, NOISE FIGURE (db) = 1. ma, R S = 15 Ω = 5 µa, R S = 2 Ω = µa, R S = 2. kω = 5 µa, R S = 4. kω R S = OPTIMUM RS = SOURCE RS = RESISTANCE NF, NOISE FIGURE (db) f = 1. khz =5 µa µa 5 µa 1. ma f, FREQUENCY (khz) Figure 7. Frequency Effects k 2.k 5.k k 2k 5k k R S, SOURCE RESISTANCE (kω) Figure 8. Source Resistance Effects CAPACITANCE (pf) 3 2 C eb C cb REVERSE VOLTAGE (VOLTS) Figure 9. Capacitance f T,CURRENT GAIN BANDWIDTH PRODUCT (MHz) 5 = 2 V Figure. Current Gain Bandwidth Product

5 +.5.8 R θvc for (sat) V, VOLTAGE ( VOLTS ) V /I B = 1. V.6 V = V.4.2 /I B = k COEFFICIENT (mv/ C) R θvb for V BE Figure 11. On Voltages Figure 12. Temperature Coefficients

6 SOT-23.63(1.6).47(1.2).122(3.).6(2.7).6(.15)MIN..1(2.8).83(2.).8(2.4).7(1.78).8(.2).3(.8).4(.)MAX..2(.5).12(.3).55(1.4).35(.89) Dimensions in inches and (millimeters)

7 Ordering Information: Device PN Packing Part Number G (1) WS Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix G ;Halogen free product for packing code suffix H ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life saving implant or other applications intended for life sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures.