Bias Resistor Transistor
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- Shon Oliver
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1 SEMICONDUCTOR TECHNICAL DATA DTC ~ 8 DTC ~ / /7 DTC / Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT- package which is designed for low power surface mount applications. SOT (TO 6AB) Simplifies Circuit Design Reduces Board Space and Component Count The SOT- package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. PIN BASE (INPUT) R R PIN COLLECTOR (OUTPUT) PIN EMITTER (GROUND) MAXIMUM RATINGS (T A = unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage V CBO Vdc Collector-Emitter Voltage V CEO Vdc Collector Current I C madc Total Power T A = (Note.) Derate above P D 6. mw C/W DEVICE MARKING AND RESISTOR VALUES DTC Device Marking R(K) R(K) A8J.7.7 Shipping /Tape & Reel DTC A8A DTC A8B DTC A8C 7 7 DTC A8M. 7 DTC6 A8K.7 7 DTC7 A8D 7 DTC8 A8L 7 DTC A8F.7 DTC A8E DTC A8U /Tape & Reel /Tape & Reel /Tape & Reel /Tape & Reel /Tape & Reel /Tape & Reel /Tape & Reel /Tape & Reel /Tape & Reel /Tape & Reel DTC A8T 7 /Tape & Reel DTC7 A8H.. DTC A8G.. DTC A8R.. Device mounted on a FR- glass epoxy printed circuit board using the minimum recommended footprint. /Tape & Reel /Tape & Reel /Tape & Reel Revision No : /6
2 DTC ~ 8, DTC ~ / /7, DTC / THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance Junction-to-Ambient (Note.) R θja 8 C/W Operating and Storage Temperature Range T J, T stg to + C Maximum Temperature for Soldering Purposes, Time in Solder Bath T L 6 C Sec ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted) OFF CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (V CB = V, I E = ) I CBO nadc Collector-Emitter Cutoff Current (V CE = V, I B = ) I CEO nadc Emitter-Base Cutoff Current (V EB = 6. V, I C =) DTC I EBO. DTC. DTC. DTC. DTC. DTC6.8 DTC7. DTC8. DTC.9 DTC.9 DTC. DTC. DTC7. DTC. DTC. Collector-Base Breakdown Voltage (I C = µa, I E = ) V (BR)CBO Vdc Collector-Emitter Breakdown Voltage (Note.), (I C =. ma, I B = ) V (BR)CEO Vdc ON CHARACTERISTICS DC Current Gain (V CE = V, I C =.ma) Collector-Emitter Saturation Voltage (I C = ma, I B =. ma) (I C = ma, I B = ma) DTC7 / DTC (I C = ma, I B = ma) DTC / DTC / DTC6 / DTC8 / DTC / DTC / DTC / DTC DTC h FE DTC 6 DTC 6 DTC 8 DTC 8 DTC6 8 DTC7 8 DTC8 8 DTC 6 DTC 6 DTC 6 DTC 6 DTC7 8. DTC.. DTC 6 madc V CE(sat). Vdc. Pulse Test: Pulse Width < µs, Duty Cycle <.% Revision No : /6
3 DTC ~ 8, DTC ~ / /7, DTC / ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted) ON CHARACTERISTICS (Note.) Output Voltage (on) (V CC =. V, V B =.V, R L =.KΩ) (V CC =. V, V B =.V, R L =.KΩ) (V CC =. V, V B =.V, R L =.KΩ) Input Resistor Characteristic Symbol Min Typ Max Unit Output Voltage (off) (V CC =. V, V B =.V, R L =.KΩ) (V CC =. V, V B =.V, R L =.KΩ) DTC (V CC =. V, V B =.V, R L =.KΩ) DTC DTC6 DTC DTC DTC V OL. DTC. DTC. DTC. DTC6. DTC7. DTC8. DTC. DTC. DTC7. DTC. DTC. DTC. DTC DTC. Vdc V OH.9 Vdc Resistor Ratio DTC / DTC / DTC7 R/R.8. DTC / DTC / DTC.8. DTC.8.7 DTC6.. DTC7.7. DTC8.8.7 DTC / DTC / DTC DTC / DTC. Pulse Test: Pulse Width < µs, Duty Cycle <.%. DTC R DTC 7. DTC. 8.6 DTC DTC...86 DTC DTC7 7. DTC DTC DTC 7. DTC 7 DTC DTC7...9 DTC.7.. DTC KΩ Revision No : /6
4 DTC ~ 8, DTC ~ / /7, DTC / DTC I C /I B = V CE = V VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS).. T A = hfe, DC CURRENT GAIN T A = Figure. V CE(sat) vs. I C Figure. DC Current Gain Cob, CAPACITANCE (pf) 6 f = MHz IE = A TA = IC, COLLECTOR CURRENT (ma). TA = V O = V 6. 6 V IN, INPUT VOLTAGE (VOLTS) 8 Figure. Output Capacitance Figure. Output Current vs. Input Voltage VIN, INPUT VOLTAGE (VOLTS) V O =. V T A =. Figure 6. Output Voltage vs. Input Current Revision No : /6
5 DTC ~ 8, DTC ~ / /7, DTC / DTC PD, POWER DISSIPATION (MILLIWATTS) R θja = 6/W T A, AMBIENT TEMPERATURE ( C) Figure. Derating Curve VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS).. I C /I B =. 6 8 Figure. V CE(sat) vs. I C T A = hfe, DC CURRENT GAIN (NORMALIZED) V CE = V T A = Cob, CAPACITANCE (pf) f = MHz l E = A T A = Figure. DC Current Gain Figure. Output Capcitance.. T A = V O = V VIN, INPUT VOLTAGE (VOLTS) V O =. V T A = V IN, INPUT VOLTAGE (VOLTS) Figure. Output Current vs. Input Voltage. Figure 6. Input Voltage vs. Output Current Revision No : /6
6 DTC ~ 8, DTC ~ / /7, DTC / DTC VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)... I C /I B = T A = 6 8 hfe, DC CURRENT GAIN (NORMALIZED) V CE = V T A = Figure 7. V CE(sat) vs. I C Figure 8. DC Current Gain Cob, CAPACITANCE (pf) f = MHz l E = A T A =... T A = V O = V 6 8 V IN, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure. Output Current vs. Input Voltage VIN, INPUT VOLTAGE (VOLTS) V O =. V T A =. Figure. Input Voltage vs. Output Current Revision No : 6/6
7 DTC ~ 8, DTC ~ / / 7, DTC / DTC VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS). I C /I B = T A =. 6 8 hfe, DC CURRENT GAIN (NORMALIZED) V CE = V T A = Figure. V CE(sat) vs. I C Figure. DC Current Gain Cob, CAPACITANCE (pf) f = MHz l E = A T A = IC, COLLECTOR CURRENT (ma) T A =.. V O = V. 6 8 V IN, INPUT VOLTAGE (VOLTS) Figure. Output Capacitance Figure. Output Current vs. Input Voltage VIN, INPUT VOLTAGE (VOLTS) V O =. V T A =. Figure 6. Input Voltage vs. Output Current Revision No : 7/6
8 DTC ~ 8, DTC ~ / /7, DTC / DTC6 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS).. I C /I B = T A = hfe, DC CURRENT GAIN T A = V CE = V Figure 7. V CE(sat) vs. I C Figure 8. DC Current Gain Cob, CAPACITANCE (pf).... f = MHz I E = A T A = IC, COLLECTOR CURRENT (ma).. 6 T A = V O = V 6 V IN, INPUT VOLTAGE (VOLTS) 8 Figure 9. Output Capacitance Figure. Output Current vs. Input Voltage V O =. V VIN, INPUT VOLTAGE (VOLTS) T A =. 6 8 Figure. Input Voltage vs. Output Current Revision No : 8/6
9 DTC ~ 8, DTC ~ / /7, DTC / DTC7 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS).. I C /I B = T A =. 6 8 hfe, DC CURRENT GAIN (NORMALIZED) V CE = T A = Figure 7. VCE(sat) vs. IC Figure 8. DC Current Gain Cob, CAPACITANCE (pf).... f = MHz l E = A T A = IC, COLLECTOR CURRENT (ma) T A = V O = V 6 8 Figure 9. Output Capacitance 6 8 V IN, INPUT VOLTAGE (VOLTS) Figure. Output Current vs. Input Voltage V O =. V T A = VIN, INPUT VOLTAGE (VOLTS). Figure. Input Voltage vs. Output Current Revision No : 9/6
10 DTC ~ 8, DTC ~ / /7, DTC / DTC V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = - h FE, DC CURRENT GAIN T A = - V CE = V Figure 7. V CE(sat) versus I C Figure 8. DC Current Gain C ob, CAPACITANCE (pf)..... f = MHz I E = V T A =.. T A = - V O = V. V in, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure. Output Current versus Input Voltage V in, INPUT VOLTAGE (VOLTS) T A = - V O =. V. Figure. Input Voltage versus Output Current Revision No : /6
11 DTC ~ 8, DTC ~ / /7, DTC / DTC V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = - h FE, DC CURRENT GAIN T A = - V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain. C ob, CAPACITANCE (pf).... f = MHz I E = V T A =.. T A = - V O = V. V in, INPUT VOLTAGE (VOLTS) Figure. Output Capacitance Figure. Output Current versus Input Voltage V in, INPUT VOLTAGE (VOLTS) T A = - V O =. V. Figure 6. Input Voltage versus Output Current Revision No : /6
12 DTC ~ 8, DTC ~ / /7, DTC / DTC7 V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = - h FE, DC CURRENT GAIN T A = - V CE = V Figure 7. V CE(sat) versus I C Figure 8. DC Current Gain. C ob, CAPACITANCE (pf).... f = MHz I E = V T A =.. T A = - V O = V V in, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure. Output Current versus Input Voltage V in, INPUT VOLTAGE (VOLTS) T A = - V O =. V. Figure. Input Voltage versus Output Current Revision No : /6
13 DTC ~ 8, DTC ~ / /7, DTC / DTC8 INPUT VOLTAGE : VI(on) (V) m m Ta= C C m µ µ µ m m m m m m m OUTPUT CURRENT : IO (A) VO=.V Fig. Input voltage vs. output current (ON characteristics) OUTPUT CURRENT : Io (A) m m m m µ µ µ µ µ µ µ VCC=V Ta= C C µ µ INPUT VOLTAGE : VI(off) (V) Fig. Output current vs. input voltage (OFF characteristics) DC CURRENT GAIN : GI k Ta= C C VO=V µ µ µ m m m m m m m OUTPUT CURRENT : IO (A) Fig. DC current gain vs. output current OUTPUT VOLTAGE : VO(on) (V) m m m m m m m Ta= C C lo/li= m m µ µ µ m m m m m m m OUTPUT CURRENT : IO (A) Fig. Output voltage vs. output current Revision No : /6
14 DTC ~ 8, DTC ~ / /7, DTC / DTC V CE(sat), COLLECTOR VOLTAGE (VOLTS) I C /I B =... - h FE, DC CURRENT GAIN T A = - V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain C ob, CAPACITANCE (pf)..... f = MHz I E = V T A =.. T A = - V O = V V in, INPUT VOLTAGE (VOLTS) Figure. Output Capacitance Figure. Output Current versus Input Voltage V in, INPUT VOLTAGE (VOLTS) T A = - V O =. V. Figure 6. Input Voltage versus Output Current Revision No : /6
15 DTC ~ 8, DTC ~ / /7, DTC / TYPICAL APPLICATIONS FOR NPN BRTs µ Figure. Level Shifter: Connects or Volt Circuits to Logic Figure. Open Collector Inverter: Inverts the Input Signal Figure. Inexpensive, Unregulated Current Source Revision No : /6
16 DTC ~ 8, DTC ~ / /7, DTC / SOT- V D A L G H B C S K J NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 98.. CONTROLLING DIMENSION: INCH. DIM A B C D G H J K L S V INCHES MIN MAX MILLIMETERS MIN MAX inches mm Revision No : 6/6
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UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 5mA. SOT-89 *Pb-free plating
ZXT11N20DF SUMMARY V CEO =20V; R SAT = 2.5A. = 40m ;I C SOT23. SuperSOT4 20V NPN SILICON LOW SATURATION TRANSISTOR
ZXT11N20DF SuperSOT4 20V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY V CEO =20V; R SAT = 40m ;I C = 2.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix
Darlington Amplifier Transistor
We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping MMBTA13LT1 1M 3000/Tape & Reel MMBTA14LT1 1N 3000/Tape & Reel MAXIMUM RATINGS Rating
BCP53 Series. PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS
PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT package which is designed for medium power surface
LM3046 Transistor Array
Transistor Array General Description The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentiallyconnected
MPSA44. High Voltage Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
Preferred Device High Voltage Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO Vdc Collector Base Voltage V CBO 5
UNISONIC TECHNOLOGIES CO., LTD MPSA92/93
UNISONIC TECHNOLOGIES CO., LTD /93 HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The /93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * High
MMBT3906TT1G. General Purpose Transistors. PNP Silicon GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
General Purpose Transistors PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT46/SC75 package which is designed for low power surface mount applications.
UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2N441 NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N441 is designed for use as a medium power amplifier and switch requiring collector currents up to 5mA. ORDERING
MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO dc Collector Base oltage CBO dc Emitter Base oltage EBO 4. dc Collector Current Continuous I C 6 madc
MJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
BCR129 BCR129S BCR129W
BCR9... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω) BCR9S: Two internally isolated transistors with good matching in one
ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: V CEO. = 1A; h FE =60V; I C = PNP: V CEO =
DUAL 6 NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: CEO =6; I C = ; h FE =1-3 PNP: CEO =-6; I C = -; h FE =1-3 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6
Type Marking Pin Configuration Package BCR112 BCR112W 1=B 1=B 2=E 2=E 3=C 3=C
BCR... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =4.7kΩ, R =4.7kΩ) Pbfree (RoHS compliant) package Qualified according AEC
BASE 2N2906A 2N2907,A N2904A 2N2905,A P D P D mw mw/ C Watts mw/ C T J, T stg 65 to +200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by N94A/D PNP Silicon Annular Hermetic Transistors Designed for high speed switching circuits, DC to VHF amplifier applications and complementary circuitry.
UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive
SOT-23 Mark: 1S. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
C B E PN2369A TO-92 MMBT2369A C SOT-23 Mark: S B E Discrete POWER & Signal Technologies MMPQ2369 E B E B E B E B SOIC-6 C C C C C C C C This device is designed for high speed saturation switching at collector
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD PNP PLANAR SILICON TRANSISTOR FEATURES SOT-89 * Low collector-to-emitter saturation voltage: V CE(SAT) =-0.4V max/i C =-A, I B =-0.A TO- TO-6 ORDERING INFORMATION Ordering
2N6667, 2N6668. Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, V, 65 W
Darlington Silicon Power Transistors Designed for general purpose amplifier and low speed switching applications. High DC Current Gain h FE = 500 (Typ) @ I C =.0 Adc Collector Emitter Sustaining Voltage
MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
General Purpose Transistor NPN Silicon Features Pb Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 25 Vdc Collector Base Voltage V CBO 25 Vdc Emitter
MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon
MMBT2222AWTG, SMMBT2222AWTG General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC7 package which is designed
BC857BTT1G. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.
NSS1C201L, NSV1C201L. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS NPN LOW V CE(sat) TRANSISTOR
NSSCL, NSVCL V,. A, Low V CE(sat) NPN Transistor ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat)
MPSA18G. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS
Preferred Device Low Noise Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45
NPN Silicon Planar High Voltage Transistor
NPN Silicon Planar High Voltage Transistor FEATURES High BV CEO, BV CBO High current gain Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21
BCR Type Marking Pin Configuration Package BCR133 BCR133S BCR133W Pb-containing package may be available upon special request C 3
BCR... NPN Silicon Digital Transistor Switching in circuit, inverter, interface circuit, drive circuit Built in bias resistor (R = kω, R = kω) BCRS: Two internally isolated transistors with good matching
NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
C 2 B 1 E 1 E 2 B 2 C 1. Top View
MMDT446 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Complementary Pair One 424-Type NPN One 426-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification
BDW42 NPN, BDW46, BDW47 PNP. Darlington Complementary Silicon Power Transistors
BDW42 NPN,, BDW47 PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium power silicon NPN and PNP Darlington transistors are designed
MJ21195 PNP MJ21196 NPN
MJ21195 PNP MJ21196 NPN Preferred Devices Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
TIP2955 PNP SILICON POWER TRANSISTOR
Designed for Complementary Use with the TIP3055 Series 90 W at 5 C Case Temperature 15 A Continuous Collector Current Customer-Specified Selections Available B C SOT-93 PACKAGE (TOP VIEW) 1 E 3 Pin is
TIP47G, TIP48G, TIP50G. High Voltage NPN Silicon Power Transistors 1.0 AMPERE POWER TRANSISTORS NPN SILICON VOLTS 40 WATTS
TIP7G, TIP8G, TIP5G High oltage NPN Silicon Power Transistors This series is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features
MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
MMBT2222L, MMBT2222AL, SMMBT2222AL. General Purpose Transistors. NPN Silicon
L, AL, SAL General Purpose Transistors NPN Silicon Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications
COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS = -1.25A;
COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: V CEO =15V; V CE(sat) =.1V; I C = 1.5A; PNP: V CEO =-12V; V CE(sat) =-.1V; I C = -1.25A; DESCRIPTION This new combination device comprises
ZXT12N50DX. SuperSOT4 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY V CEO =50V; R SAT = 3A MSOP8
ZXT12N50DX SuperSOT4 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY V CEO =50V; R SAT = 45m ;I C = 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the
ZXTDE4M832. MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION
MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LO SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor V CEO = 80V; R SAT = 68m ; C = 3.5A PNP Transistor V CEO = -70V; R SAT = 117m ;
An Introduction to the SM-8 Package
An Introduction to the SM-8 Package Mike Townson Introduction Over recent years the benefits for companies to move to surface mount technology has lead to significant growth in the component industry.
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors Designed for general purpose power amplifier and switching applications. Features 25 A Collector
NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω
NJX67PDR2G Complementary 3, 6. A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications
TIP120, 121, 122, 125, 126, 127
Features: Collector - emitter sustaining voltage - V CEO (sus) = 60 V (minimum) - TIP120, TIP125 80 V (minimum) - TIP121, TIP126 100 V (minimum) - TIP122, TIP127 Collector - emitter saturation voltage
PT23T5401 Transistor. Feature. Mechanical Characteristics. Absolute maximum Top View. Parameter Symbol Value Units
PT23T54 Transistor Feature 3 - Collector PNP epitaxial planar silicon transistor - Base Top View 2 - Emitter Mechanical Characteristics Lead finish:% matte Sn(Tin) Mounting position: Any Qualified max
BC489, A, B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS
High Current Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 80 Vdc Collector Base Voltage V CBO 80 Vdc Collector
MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V
Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.