50 Vdc Collector-Base Voltage VCEO. 50 Vdc Collector Current-Continuous VCBO. THERMAL CHARACTERISTICS Characteristics Symbol Value Unit

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1 MMUN Series Bias Resistor Transistor NPN Silicon P b Lead(Pb)Free BASE COLLECTOR R R EMITTER SOT MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 5 Vdc CollectorBase Voltage VCBO 5 Vdc Collector CurrentContinuous IC madc THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Total Device Dissipation FR5 Board () T A = 5 C PD 46 mw Derate above 5 C.6 mw / C Thermal Resistance, Junction to Ambient () Junction and Storage,Temperature R θja TJ,Tstg to +5 C/W C. minimun pad Device Marking and Resistor Values Device Marking R(k) R(k) Device Marking R(k) R(k) MMUN MMUN MMUN MMUN4 MMUN5 MMUN6 MMUN MMUN A8A, 4 A8J A8B A8C, 6 A8D A8E A8F 4.7 MMUN4 A8K A8L A8M A8R A8U 4.7 A8G.. A8H / Rev.B 5Jan7

2 MMUN Series ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorBase Cutof f Current (VCB= 5 V, IE = ) ICBO nadc CollectorEmitter Cutoff Current (VCE= 5 V, IB = ) ICEO 5 nadc EmitterBase Cutoff Current (VEB= 6. V, IC = ) MMUN MMUN MMUN MMUN4 MMUN5 MMUN6 MMUN MMUN MMUN4 DC Current Gain (VCE= V, MMUN IC = 5. ma) h FE 5 MMUN 6 MMUN 8 MMUN4 8 MMUN5 6 MMUN6 6 MMUN. MMUN MMUN4 6 MMUN MMUN MMUN MMUN4 MMUN5 MMUN6 MMUN MMUN MMUN4 IEBO CollectorBase Breakdown Voltage (IC = ma, I E = ) V(BR)CBO 5 Vdc CollectorEmitter Breakdown Voltage (Note.) (I C =. ma, IB = ) ON CHARACTERISTICS (Note.) CollectorEmitter Saturation Voltage (IC = ma, IB =. ma) (IC = ma, I B = 5 ma) MMUN/MMUN (IC = ma, I B = ma) MMUN5/MMUN6/ /// Output Voltage (on) (VCC= 5. V, VB =.5 V, RL=. kω) (VCC= 5. V, VB =.5 V, RL =. k Ω) (VCC= 5. V, VB = 5. V, RL =. k Ω). Pulse Test: Pulse Width < ms, Duty Cycle <. %. V(BR)CEO madc 5 Vdc V CE(sat) 5 Vdc V OL Vdc

3 MMUN Series ELECTRICAL CHARACTERISTICS (TA = 5C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note ) (Continued) Output Voltage (off) (VCC = 5. V, VB =.5 V, RL =. k Ω) (VCC= 5. V, VB =.5 V, RL =. k Ω) MMUN (VCC= 5. V, VB = 5 V, RL =. k Ω) MMUN5 MMUN6 Input Resistor MMUN MMUN MMUN MMUN4 MMUN5 MMUN6 MMUN MMUN MMUN4 VOH 4.9 Vdc R k Ω Resistor Ratio MMUN/MMUN/MMUN MMUN4 MMUN5/MMUN6/ MMUN4 MMUN/MMUN/ R/R Pulse Test: Pulse Width < µs, Duty Cycle <.% TYPICAL ELECTRICAL CHARACTERISTICS MMUN PD, POWER DISSIP ATION (MILLIW ATTS) RθJA= 65 /W TA, AMBIENT TEMPERATURE (5 ) Figure. Derating Curve VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS).. IC /IB = Figure. VCE(sat) vs. I C TA =

4 MMUN Series TYPICALELECTRICAL CHARACTERISTICS MMUN hfe, DC CURRENT GAIN (NORMALIZED) VCE = V TA = Figure. DC Current Gain Cob, CAPACITANCE (pf) 4 f = MHz le = A TA = 4 5 VR, REVERSE BIAS VOL TAGE (VOL TS) Figure 4. Output Capcitance.. TA = 5 VO = 5 V VO = V TA =. 4 V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) Figure 5. Output Current vs. Input Voltage.. IC/IB = Figure 7. VCE(sat) vs. I C TA = MMUN hfe, DC CURRENT GAIN (NORMALIZED). 4 5 IC, COLLECTOR CURRENT (ma) Figure 6. Input Voltage vs. Output Current VCE = V TA = IC, COLLECTOR CURRENT (ma ) Figure 8. DC Current Gain

5 MMUN Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN Cob, CAPACITANCE (pf) 4 f = MHz le = A TA = 5 4 VR, REVERSE BIAS VOL TAGE (VOLTS) 5... TA = VO = 5 V Figure 9. Output Capacitance Figure. Output Current vs. Input Voltage VO = V TA = 5 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS).. IC/IB = TA = Figure. VCE(sat) vs. I C 4 5 Figure. Input V oltage vs. Output Current MMUN hfe, DC CURRENT GAIN (NORMALIZED) VCE = V Figure. DC Current Gain TA =

6 MMUN Series Cob, CAPACITANCE (pf) VR, REVERSE BIAS VOL TAGE (VOL TS) Figure 4. Output Capacitance TYPICAL ELECTRICAL CHARACTERISTICS MMUN f = MHz le = A TA = C 55C TA = ±55C VO = 5 V Figure 5. Output Current vs. Input Voltage VO = V TA = 5 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS).. IC/IB = Figure 7. VCE(sat) vs. I C. 4 5 Figure 6. Input Voltage vs. Output Current TA = 5 MMUN4 hfe, DC CURRENT GAIN (NORMALIZED) VCE = Figure 8. DC Current Gain TA = 5

7 MMUN Series Cob, CAPACITANCE (pf) TYPICAL ELECTRICAL CHARACTERISTICS MMUN4 f = MHz le = A TA = TA = VO = 5 V VR, REVERSE BIAS VOL TAGE (VOLTS) Figure 9. Output Capacitance Figure. Output Current vs. Input V oltage VO = V TA =. 4 5 Figure. Input Voltage vs. Output Current VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOL TS).. IC/IB = TA = IC, COLLECTOR CURRENT (ma) Figure. V CE(sat) vs. IC 4 8 hfe, DC CURRENT GAIN VCE = V TA = IC, COLLECTOR CURRENT (ma) Figure. DC Current Gain

8 MMUN Series Cob, CAPACITANCE (pf) TYPICAL ELECTRICAL CHARACTERISTICS f = MHz IE = A TA =. TA = VO = 5 V VR, REVERSE BIAS VOL TAGE (VOL TS) Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage VO = V TA = 5. VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOL TS).. IC/IB = TA =. 7 7 Figure 6. Output Voltage vs. Input Current 7 hfe, DC CURRENT GAIN TA = VCE = V Figure 7. VCE(sat) vs. I C Figure 8. DC Current Gain

9 MMUN Series MMUN Series TYPICAL APPLICATIONS FOR NPN BRTs + V ISOLATED LOAD FROM µp OR OTHER LOGIC Figure. Level Shifter: Connects or 4 Volt Circuits to Logic + V VCC OUT IN LOAD Figure. Open Collector Inverter: Inverts the Input Signal Figure 4. Inexpensive, Unregulated Current Source

10 MMUN Series Dim A B C D E G H J K L M Min Max A B D E G M L H J TOP VIEW K C SOT SOT Package Outline Dimension

DATA SHEET P D * mw C/W. Packing. Packing SOT-23 SOT /Reel 3000/Reel SOT-23 SOT /Reel 3000/Reel SOT-23.

DATA SHEET P D * mw C/W. Packing. Packing SOT-23 SOT /Reel 3000/Reel SOT-23 SOT /Reel 3000/Reel SOT-23. DATA SHEET SEMICONDUCTOR NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor