MCC. 2N5401 )HDWXUHV. PNP Silicon Amplifier Transistor 625mW 0HFKDQLFDO'DWD TO-92

Size: px
Start display at page:

Download "MCC. 2N5401 )HDWXUHV. PNP Silicon Amplifier Transistor 625mW 0HFKDQLFDO'DWD TO-92"

Transcription

1 omponents Marilla Street Chatsworth!"# $%!"# 2N5401 )HDWXUHV Through Hole Package 1 o C Junction Temperature Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Halogen free available upon request by adding suffix "-HF" 0HFKDQLFDO'DWD Case: TO-92, Molded Plastic Marking: 2N5401 PNP Silicon Amplifier Transistor 625mW TO-92 A E B 0D[LPXP 5DWLQJV # 4 & 8QOHVV 2WKHUZLVH 6SHFLILHG Charateristic Symbol Value Unit Collector-Emitter Voltage V CEO 1 V Collector-Base Voltage V CBO 160 V Emitter-Base Voltage V EBO 5.0 V Collector Current(DC) I C 600 ma Power Dissipation@T A =25 o C Derate above 25: Power Dissipation@T C =25 o C Derate above 25: Maximum Thermal Resistance, Junction to Ambient Air Maximum Thermal Resistance, Junction to Case P d P d mw mw/ o C W mw/ o C R,-$ 200 o C/W R,-& 83.3 o C/W Operating & Storage Temperature T j,t STG -55~1 o C G D E BC INCHES MM DIM MIN MAX MIN MAX NOTE A B C D E G Straight Lead Bent Lead * For ammo packing detailed specification, click here to visit our website of product packaging for details. C STRAIGHT LEAD BULK PACK DIMENSIONS E B C BENT LEAD AMMO PACK 1 of 5

2 ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS Collector Emitter Breakdown Voltage(1) (IC = 1.0 madc, IB = 0) Characteristic Symbol Min Max Unit V(BR)CEO 1 Collector Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 160 Emitter Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 120, IE = 0) (VCB = 120, IE = 0, TA = 100 C) Emitter Cutoff Current (VEB = 3.0, IC = 0) ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 madc, VCE = 5.0 ) (IC = 10 madc, VCE = 5.0 ) (IC = madc, VCE = 5.0 ) Collector Emitter Saturation Voltage (IC = 10 madc, IB = 1.0 madc) (IC = madc, IB = 5.0 madc) Base Emitter Saturation Voltage (IC = 10 madc, IB = 1.0 madc) (IC = madc, IB = 5.0 madc) SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product (IC = 10 madc, VCE = 10, f = 100 MHz) Output Capacitance (VCB = 10, IE = 0, f = 1.0 MHz) Small Signal Current Gain (IC = 1.0 madc, VCE = 10, f = 1.0 khz) Noise Figure (IC = 2 µadc, VCE = 5.0, RS = 1.0 kω, f = 1.0 khz) V(BR)EBO 5.0 ICBO IEBO nadc hfe VCE(sat) VBE(sat) ft MHz Cobo 6.0 pf hfe NF 8.0 db 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. 2 of 5

3 Figure 1. DC Current Gain Figure 2. Collector Saturation Region µ Figure 3. Collector Cut Off Region 3 of 5

4 Figure 4. On Voltages θ θ θ Figure 5. Temperature Coefficients µ µ Values Shown are for 10 ma Figure 6. Switching Time Test Circuit Figure 7. Capacitances Figure 8. Turn On Time Figure 9. Turn Off Time 4 of 5

5 Ordering Information : Device Part Number-AP Part Number-BP Note : Adding "-HF" suffix for halogen free, eg. Part Number-AP-HF Packing Ammo Packing: 20Kpcs/Carton Bulk: 100Kpcs/Carton ***IMPORTANT NOTICE*** Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Corp. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights,nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Corp. and all the companies whose products are represented on our website, harmless against all damages. ***LIFE SUPPORT*** 's products are not authorized for use as critical components in life support devices or systems without the express written approval of Corporation. ***CUSTOMER AWARENESS*** Counterfeiting of semiconductor parts is a growing problem in the industry. () is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. strongly encourages customers to purchase parts either directly from or from Authorized Distributors who are listed by country on our web page cited below. Products customers buy either from directly or from Authorized Distributors are genuine parts, have full traceability, meet 's quality standards for handling and storage. will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 5 of 5

MCC BC558A/B/C. Features. PNP Silicon Amplifier Transistor 625mW

MCC BC558A/B/C.   Features. PNP Silicon Amplifier Transistor 625mW omponents 2736 Marilla Street Chatsworth!"# $%!"# BC556A/B/C BC557A/B/C A/B/C Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) 15 o C Junction Temperature

More information

MCC. MMDT3904V

MCC.   MMDT3904V Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epitaxial Die Construction Ideal for

More information

MCC. BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW. Features. NPN General Purpose Transistors. Maximum Ratings SOT-323

MCC.   BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW. Features. NPN General Purpose Transistors. Maximum Ratings SOT-323 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low current (max. 100mA) Low voltage (max. 65V) Epoxy meets UL 94 V-0 flammability rating Moisure

More information

2N5400 2N5401. PNP Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N5400 2N5401. PNP Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 2N540 Unit Collector Emitter Voltage VCEO Collector

More information

MCC. P6KE6.8 THRU. Features. Maximum Ratings APPLICATION DO WATTS TRANSIENT VOLTAGE SUPPRESSOR 6.

MCC.  P6KE6.8 THRU. Features. Maximum Ratings APPLICATION DO WATTS TRANSIENT VOLTAGE SUPPRESSOR 6. Features Epoxy meets UL 94 V- flammability rating Moisture Sensitivity Level 1 omponents 2736 Marilla Street Chatsworth!"# $%!"# and suffix"c" designates bidirectional type Lead Free Finish/Rohs Compliant

More information

2N5550 2N5551. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N5550 2N5551. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 40 60 Collector

More information

MCC. SS220-L THRU. Features. 2 Amp Schottky Rectifier 20 to 200 Volts DO-214AC (SMA) (LEAD FRAME) Maximum Ratings

MCC.  SS220-L THRU. Features. 2 Amp Schottky Rectifier 20 to 200 Volts DO-214AC (SMA) (LEAD FRAME) Maximum Ratings Features Guard Ring Protection Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates Compliant. See ordering information) Low Forward High Current Capability Halogen free available upon request

More information

NPN MPS650 PNP MPS750 MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) OFF CHARACTERISTICS

NPN MPS650 PNP MPS750 MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) OFF CHARACTERISTICS MAXIMUM RATINGS Rating Symbol MPS650 MPS750 MPS651 MPS751 Collector Emitter Voltage VCE 40 60 Vdc Collector Base Voltage VCB 60 80 Vdc Emitter Base Voltage VEB 5.0 Vdc Collector Current Continuous IC 2.0

More information

M C C 3EZ5.1D5 THRU 3EZ75D5. Features. 3 W Glass Passivated Junction Silicon Zener Diode Volts. Mechanical Data DO-15

M C C 3EZ5.1D5 THRU 3EZ75D5.   Features. 3 W Glass Passivated Junction Silicon Zener Diode Volts. Mechanical Data DO-15 Features Low Profile Package Glass Passivated Junction Excellent Clamping Capability Lead Free Finish/RoHS Compliant(Note C)("P" Suffix Designates Compliant. See Ordering Information) Halogen free available

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 3 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 3 5 Vdc Collector Base Voltage VCBO 4 3 Vdc

More information

M C C. SMCJ1.5KE6.8(C)A THRU SMCJ1.5KE550(C)A. Features. Transient Voltage Suppressor 6.8 to 550 Volts 1500 Watt.

M C C.  SMCJ1.5KE6.8(C)A THRU SMCJ1.5KE550(C)A. Features. Transient Voltage Suppressor 6.8 to 550 Volts 1500 Watt. omponents 20736 Marilla Street Chatsworth!"# $%!"# SMCJ1.5KE6.8(C)A THRU SMCJ1.5KE550(C)A Features For surface mount applicationsin in order tooptimize board space Lead Free Finish/Rohs Compliant (Note1)

More information

MCC. P6KE6.8 THRU P6KE540(C)A. Features. Maximum Ratings APPLICATION DO WATTS TRANSIENT VOLTAGE SUPPRESSOR 6.

MCC.  P6KE6.8 THRU P6KE540(C)A. Features. Maximum Ratings APPLICATION DO WATTS TRANSIENT VOLTAGE SUPPRESSOR 6. Features omponents 2736 Marilla Street Chatsworth!"# $%!"# Economical series Available in both unidirectional and bidirectionalconstruction and suffix"c" designates bidirectional type Lead Free Finish/Rohs

More information

omponents Marilla Street Chatsworth nadc Vdc ms

omponents Marilla Street Chatsworth nadc Vdc ms Features Symbol ating ating Unit V DS Drain -source Voltage 60 V V GS Gate -source Voltage ±20 V I D Drain Current 115 ma P D Total Power Dissipation 200 mw JA Thermal esistance Junction to Ambient 625

More information

MPS2222 MPS2222A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

MPS2222 MPS2222A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 3 4 Collector Base Voltage

More information

100 Vdc Collector Base Voltage Emitter Base Voltage Collector Current Continuous. Adc Peak. Watts Derate above 25 C. Watts 25 C

100 Vdc Collector Base Voltage Emitter Base Voltage Collector Current Continuous. Adc Peak. Watts Derate above 25 C. Watts 25 C ... designed for low power audio amplifier and low current, high speed switching applications. High Collector Emitter Sustaining Voltage VCEO(sus) = 100 (Min) MJE243, MJE253 High DC Current Gain @ IC =

More information

Four Transistors Equal Power Each. Watts mw/ C Watts mw/ C TJ, Tstg 55 to +150 C. Characteristic Symbol Min Max Unit

Four Transistors Equal Power Each. Watts mw/ C Watts mw/ C TJ, Tstg 55 to +150 C. Characteristic Symbol Min Max Unit PNP/NPN Silicon Voltage and current are negative for PNP transistors MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCB 40 Vdc Emitter Base Voltage

More information

M C C. Revision: B 2016/10/10 MCQ4503 SOP-8. Features Halogen free available upon request by adding suffix "-HF"

M C C.   Revision: B 2016/10/10 MCQ4503 SOP-8. Features Halogen free available upon request by adding suffix -HF omponents 736 Marilla Street Chatsworth!"# $%!"# MCQ43 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/ohs Compliant ("P"Suffix designates ohs Compliant. See ordering

More information

PNP Silicon. MAXIMUM RATINGS MARKING DIAGRAMS. THERMAL CHARACTERISTICS (Note 1.) ORDERING INFORMATION

PNP Silicon.  MAXIMUM RATINGS MARKING DIAGRAMS. THERMAL CHARACTERISTICS (Note 1.) ORDERING INFORMATION Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 40 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous

More information

MMBT3906. PNP General Purpose Amplifier

MMBT3906. PNP General Purpose Amplifier Features Collector current capability IC = -200 ma Collector-emitter voltage VCEO = -40 V RoHS compliant package Application General switching and amplification Mechanical Data Case outline: SOT-23 Packing

More information

NPN Silicon ON Semiconductor Preferred Device

NPN Silicon ON Semiconductor Preferred Device NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage VEBO 6.0 Vdc Collector

More information

NPN Silicon. MAXIMUM RATINGS MARKING DIAGRAMS. THERMAL CHARACTERISTICS (Note 1.) ORDERING INFORMATION

NPN Silicon.  MAXIMUM RATINGS MARKING DIAGRAMS. THERMAL CHARACTERISTICS (Note 1.) ORDERING INFORMATION is a Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 60 Vdc EmitterBase Voltage VEBO 6.0 Vdc Collector Current Continuous

More information

1 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS 30 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS (2)

1 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS 30 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS (2) ...designed for driver circuits, switching, and amplifier applications. These high performance plastic devices feature: Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp Excellent Power Dissipation

More information

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Figure 1. Power Derating BD787

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Figure 1. Power Derating BD787 ... designed for lower power audio amplifier and low current, high speed switching applications. Low Collector Emitter Sustaining Voltage VCEO(sus) 60 Vdc (Min) BD787, BD788 High Current Gain Bandwidth

More information

MJE15028 MJE AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON VOLTS 50 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS

MJE15028 MJE AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON VOLTS 50 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS ... designed for use as high frequency drivers in audio amplifiers. DC Current Gain Specified to 4.0 Amperes hfe = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage

More information

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS.  THERMAL CHARACTERISTICS Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO dc Collector Base oltage CBO dc Emitter Base oltage EBO 4. dc Collector Current Continuous I C 6 madc

More information

Micro Commercial Components Marilla Street, Chatsworth, CA91311 Tel: Fax: Process Change Notification.

Micro Commercial Components Marilla Street, Chatsworth, CA91311 Tel: Fax: Process Change Notification. M C C 076 Marilla Street, Chatsworth, CA9 Tel:88-70-49 ax:88-70-499 Process Change Notification Jan- st -0 Subject : MCC Process Change Notification#PCN_00 Title: MCC revise the pn# designation for MMBD50A~MMBD505A

More information

COLLECTOR BASE EMITTER. mw mw/ C PD PD Watt. Characteristic Symbol Min Typ Max Unit V(BR)CEO BC338 V(BR)CES BC338. V(BR)EBO 5.

COLLECTOR BASE EMITTER. mw mw/ C PD PD Watt. Characteristic Symbol Min Typ Max Unit V(BR)CEO BC338 V(BR)CES BC338. V(BR)EBO 5. SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 45 25 Vdc Collector Base Voltage VCBO 5 Vdc

More information

2N5194 2N for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192

2N5194 2N for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 ... for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 ÎÎ *MAXIMUM RATINGS ÎÎ Rating ÎÎ Symbol Î 2N5194 Î Unit ÎÎ Collector Emitter Voltage

More information

General Purpose Transistors

General Purpose Transistors General Purpose Transistors PNP Silicon FEATURE Collector current capability I C = -5 ma. LBC87-6LTG LBC87-25LTG LBC87-4LTG Collector-emitter voltage V CEO (max) = -45 V. General purpose switching and

More information

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 546 547 548 Unit Collector Emitter oltage CEO 65 45 dc Collector Base oltage CBO

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE243/D... designed for low power audio amplifier and low current, high speed switching applications. High Collector Emitter Sustaining Voltage VCEO(sus)

More information

M C C. Revision: A 2016/02/07 MCMNP517 DFN2020-6U

M C C.  Revision: A 2016/02/07 MCMNP517 DFN2020-6U omponents 2736 Marilla Street Chatsworth!"# $%!"# MCMNP517 Features Halogen free available upon request by adding suffix "-HF" Super High Density Cell Design for Extremely Low DS(ON) Lead Free Finish/ohs

More information

Darlington Amplifier Transistor

Darlington Amplifier Transistor We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping MMBTA13LT1 1M 3000/Tape & Reel MMBTA14LT1 1N 3000/Tape & Reel MAXIMUM RATINGS Rating

More information

The 2SC4177 is available in SC-70 Package High DC Current Gain Complementary to 2SA1611 High Voltage Available in SC-70 Package

The 2SC4177 is available in SC-70 Package High DC Current Gain Complementary to 2SA1611 High Voltage Available in SC-70 Package DESCRIPTION FEATURES The is available in SC-70 Package High DC Current Gain Complementary to 2SA1611 High Voltage Available in SC-70 Package ORDERING INFORMATION APPLICATIONS Package Type SC-70 Part Number

More information

2N2369 2N2369A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N2369 2N2369A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS SEMICONDUCTOR TECHNICAL DATA Order this document by N69/D NPN Silicon COLLECTOR *Motorola Preferred Device BASE EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 5 Vdc Collector

More information

NPN Silicon MAXIMUM RATINGS THERMAL CHARACTERISTICS DEVICE MARKING. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS

NPN Silicon MAXIMUM RATINGS THERMAL CHARACTERISTICS DEVICE MARKING. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 45 V Collector Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 500 madc THERMAL

More information

PD Characteristic Symbol Min Typ Max Unit. V(BR)CEO 15 Vdc. V(BR)CBO 20 Vdc. V(BR)EBO 3.0 Vdc. ICBO 100 nadc. ft 4.5 GHz. Ccb

PD Characteristic Symbol Min Typ Max Unit. V(BR)CEO 15 Vdc. V(BR)CBO 20 Vdc. V(BR)EBO 3.0 Vdc. ICBO 100 nadc. ft 4.5 GHz. Ccb SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The transistor uses the same state of the art microwave transistor chip which features fine line geometry, ion implanted arsenic emitters

More information

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558 SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base

More information

30A02CH. Bipolar Transistor 30V, 0.7A, Low VCE(sat) PNP Single CPH3. Applications. Features. Specifications

30A02CH. Bipolar Transistor 30V, 0.7A, Low VCE(sat) PNP Single CPH3. Applications. Features. Specifications Ordering number : EN8A ACH Bipolar Transistor V,.A, Low VCE(sat) PNP Single CPH http://onsemi.com Applications Low-frequency Amplifier, high-speed switching, small motor drive Features Large current capacitance

More information

MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features.   MAXIMUM RATINGS THERMAL CHARACTERISTICS General Purpose Transistor NPN Silicon Features Pb Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 25 Vdc Collector Base Voltage V CBO 25 Vdc Emitter

More information

Micro Commercial Components MCP140N10Y N-Channel Enhancement Mode Field Effect Transistor TO-220 Symbol Parameter Rating Unit 1 2 3

Micro Commercial Components MCP140N10Y N-Channel Enhancement Mode Field Effect Transistor TO-220 Symbol Parameter Rating Unit 1 2 3 omponents 2736 Marilla Street Chatsworth!"# $%!"# MCP4NY Features Trench Power MV MOSFET technology Low DS(ON) Halogen free available upon request by adding suffix "-HF" Low Gate Charge Optimized for fast-switching

More information

TIP120, TIP121, TIP122,

TIP120, TIP121, TIP122, ... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 madc VCEO(sus) = 60 Vdc

More information

DATA SHEET AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

DATA SHEET AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DATA SHEET SILICON TRANSISTOR SC6 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES High DC Current Gain: hfe = TYP. (VCE = 6. V, IC =. ma) High Voltage: VCEO

More information

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 546 BC 547 BC 548 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base

More information

C 2 B 1 E 1 E 2 B 2 C 1. Top View

C 2 B 1 E 1 E 2 B 2 C 1. Top View MMDT446 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Complementary Pair One 424-Type NPN One 426-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification

More information

BASE 2N2906A 2N2907,A N2904A 2N2905,A P D P D mw mw/ C Watts mw/ C T J, T stg 65 to +200 C

BASE 2N2906A 2N2907,A N2904A 2N2905,A P D P D mw mw/ C Watts mw/ C T J, T stg 65 to +200 C SEMICONDUCTOR TECHNICAL DATA Order this document by N94A/D PNP Silicon Annular Hermetic Transistors Designed for high speed switching circuits, DC to VHF amplifier applications and complementary circuitry.

More information

Table 1: Device summary Order code Marking Package Packing 2STR SOT-23 Tape and reel

Table 1: Device summary Order code Marking Package Packing 2STR SOT-23 Tape and reel Low voltage fast-switching PNP power transistor Datasheet - production data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23

More information

MPSA70. Amplifier Transistor. PNP Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

MPSA70. Amplifier Transistor. PNP Silicon. Pb Free Package is Available* Features.   MAXIMUM RATINGS THERMAL CHARACTERISTICS Amplifier Transistor PNP Silicon Features Pb Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Emitter Base Voltage V EBO 4. Vdc Collector Current

More information

2N5400, 2N5401. PNP Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS

2N5400, 2N5401. PNP Silicon. Pb Free Packages are Available* Features.   MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS Preferred Device Amplifier Transistors PNP Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol 2N5400 Unit Collector Emitter Voltage V CEO 1 1 Collector Base Voltage V CBO 1 160

More information

2SA608N/2SC536N. Bipolar Transistor. ( )50V, ( )150mA, Low VCE(sat) (PNP)NPN Single NPA-WA. Applicaitons. Features. Specifications ( ) : 2SA608N

2SA608N/2SC536N. Bipolar Transistor. ( )50V, ( )150mA, Low VCE(sat) (PNP)NPN Single NPA-WA. Applicaitons. Features. Specifications ( ) : 2SA608N Ordering number : EN64B SA68N/SC6N Bipolar Transistor ( )V, ( )ma, Low VCE(sat) (PNP)NPN Single -WA http://onsemi.com Applicaitons Capable of being used in the low frequency to high frequency range Features

More information

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558 SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base

More information

Applications Q2 E2. Device Symbol. Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2063E6TA ,000

Applications Q2 E2. Device Symbol. Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2063E6TA ,000 YM ADVANCE INFORMATION 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features NPN + PNP Combination BV CEO > 40 (-40)V BV ECO > 6 (-3)V M = 9 (-9)A Peak Pulse Current V CE(sat) < 60 (-90)mV @ 1A R

More information

MMBT5087L. Low Noise Transistor. PNP Silicon

MMBT5087L. Low Noise Transistor. PNP Silicon Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable These Devices are PbFree,

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJL3281A/D The MJL3281A and MJL132A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. Designed

More information

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter

More information

M C C. MCAC48N10Y. Features. N-Channel Power MOSFET DFN5060. C Unless Otherwise Specified. Micro Commercial Components

M C C.   MCAC48N10Y. Features. N-Channel Power MOSFET DFN5060. C Unless Otherwise Specified. Micro Commercial Components omponents 736 Marilla treet Chatsworth!"# $%!"# MCC48NY Features Trench Power MV MOFET technology Very low on-resistance (ON) Halogen free available upon request by adding suffix "-HF" Epoxy meets UL 94

More information

15C01M. Bipolar Transistor 15V, 0.7A, Low VCE(sat) NPN Single MCP. Applications. Features. Specifications. Low-frequency Amplifier, muting circuit

15C01M. Bipolar Transistor 15V, 0.7A, Low VCE(sat) NPN Single MCP. Applications. Features. Specifications. Low-frequency Amplifier, muting circuit Ordering number : ENA 1C1M Bipolar Transistor 1V,.A, Low VCE(sat) NPN Single MCP http://onsemi.com Applications Low-frequency Amplifier, muting circuit Features Large current capacity Low collector-to-emitter

More information

BC327 PNP Epitaxial Silicon Transistor

BC327 PNP Epitaxial Silicon Transistor BC327 PNP Epitaxial Silicon Transistor Features Switching and Amplifier Applications Suitable for AF-Driver Stages and Low-Power Output Stages Complement to BC337 / BC338 October 2014 1 TO-92 1. Collector

More information

Collector Dissipation Tc=25 C 30 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C

Collector Dissipation Tc=25 C 30 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Ordering number : ENA66B SA1 Bipolar Transistor V, A, Low VCE(sat) PNP TO-F-SG http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT processes Low collector-to-emitter

More information

2N5883 2N5884 SEMICONDUCTOR TECHNICAL DATA

2N5883 2N5884 SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5883/D... designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage VCE(sat) = 1. Vdc, (max)

More information

M C C. MCAC80N06Y. Features. N-Channel Power MOSFET DFN5060. Maximum 25 O. C Unless Otherwise Specified

M C C.  MCAC80N06Y. Features. N-Channel Power MOSFET DFN5060. Maximum 25 O. C Unless Otherwise Specified Features omponents 20736 Marilla treet Chatsworth!"# $%!"# Trench Power MV MOFET technology Very low on-resistance (ON) Halogen free available upon request by adding suffix "-HF" Epoxy meets UL 94 V-0

More information

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed

More information

2N6667, 2N6668. Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, V, 65 W

2N6667, 2N6668. Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, V, 65 W Darlington Silicon Power Transistors Designed for general purpose amplifier and low speed switching applications. High DC Current Gain h FE = 500 (Typ) @ I C =.0 Adc Collector Emitter Sustaining Voltage

More information

Small Signal General Purpose Transistors (PNP) BC556/BC557/BC558. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise)

Small Signal General Purpose Transistors (PNP) BC556/BC557/BC558. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise) Small Signal General Purpose Transistors (PNP) Small Signal General Purpose Transistors (PNP) Features PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications RoHS compliance Mechanical

More information

BC857BTT1G. General Purpose Transistor. PNP Silicon

BC857BTT1G. General Purpose Transistor. PNP Silicon General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.

More information

BC517G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

BC517G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features.  MAXIMUM RATINGS THERMAL CHARACTERISTICS Darlington Transistors NPN Silicon Features Pb Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CES 30 Collector Base Voltage V CB 40 Collector

More information

500 mw When mounted on ceramic substrate (250mm 2 0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C

500 mw When mounted on ceramic substrate (250mm 2 0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Ordering number : ENC SA1416/SC646 Bipolar Transistor ( )1V, ( )1A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJL32A/D The MJL32A and MJL32A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. Designed for

More information

P D P D mw mw/ C Watts mw/ C T J, T stg 55 to +150 C (1) 200 C/W. Characteristic Symbol Min Typ Max Unit.

P D P D mw mw/ C Watts mw/ C T J, T stg 55 to +150 C (1) 200 C/W. Characteristic Symbol Min Typ Max Unit. NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45 Vdc Emitter Base Voltage V EBO 6.5 Vdc Collector

More information

DPAK For Surface Mount Applications

DPAK For Surface Mount Applications SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44H/D DPAK For Surface Mount Applications... for general purpose power and switching such as output or driver stages in applications such as switching

More information

MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon

MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon MMBT2222AWTG, SMMBT2222AWTG General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC7 package which is designed

More information

(-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA. Large current capacity High-speed switching

(-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA. Large current capacity High-speed switching Ordering number : EN8A SA169/SC61 Bipolar Transistor (-)V, (-)1A, Low VCE(sat), (PNP)NPN Single TP/TP-FA http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT

More information

MJD47 MJD50. DPAK For Surface Mount Applications SEMICONDUCTOR TECHNICAL DATA NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS

MJD47 MJD50. DPAK For Surface Mount Applications SEMICONDUCTOR TECHNICAL DATA NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS SEMICONDUCTOR TECHNICAL DATA Order this document by MJD47/D DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.

More information

MUN5311DW1T1G Series.

MUN5311DW1T1G Series. MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP47/D... designed for line operated audio output amplifier, Switchmode power supply drivers and other switching applications. 25 V to 4 V (Min) VCEO(sus)

More information

Relay drivers, high-speed inverters, converters, and other general high-current switching applications

Relay drivers, high-speed inverters, converters, and other general high-current switching applications Ordering number : EN8C SB/SD8 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single TP/TP-FA http://onsemi.com Applications Relay drivers, high-speed inverters, converters, and other general high-current

More information

MCH6541. Bipolar Transistor. ( )30V, ( )3A, Low VCE(sat) Complementary Dual MCPH6

MCH6541. Bipolar Transistor. ( )30V, ( )3A, Low VCE(sat) Complementary Dual MCPH6 Ordering number : EN8949A MCH641 Bipolar Transistor ( )V, ( )A, Low VCE(sat) Complementary Dual MCPH6 http://onsemi.com Applicaitons MOSFET gate drivers, relay drivers, lamp drivers, motor drivers Features

More information

DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR PINS MINI MOLD SILICON TRANSISTOR SC957 FEATURES Low Noise, High Gain Low Voltage Operation Low Feedback Capacitance Cre =

More information

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount

More information

M C C. MT200CB18T2 MT200CB16T Amp THYRISTOR/DIODE. Features. MODULE 800~1800 Volts. Applications. Circuit

M C C.   MT200CB18T2 MT200CB16T Amp THYRISTOR/DIODE. Features. MODULE 800~1800 Volts. Applications. Circuit Features pplications omponents 2736 Marilla Street Chatsworth!"# $%!"# Lead Free Finish/RoHS Compliant (NOTE 1)("P" Suffix designates RoHS Compliant. See ordering information) International standard package

More information

BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1 Series. General Purpose Transistors. PNP Silicon

BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1 Series. General Purpose Transistors. PNP Silicon BC856BWT1, SBC856BWT1, BC857BWT1, SBC857BWT1, BC858AWT1 General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE573/D... designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. 3 V to 4 V (Min) VCEO(sus)

More information

TIP41A TIP41B TIP41C SEMICONDUCTOR TECHNICAL DATA

TIP41A TIP41B TIP41C SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP41A/D... designed for use in general purpose amplifier and switching applications. Collector Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @

More information

2SD1012. Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single SPA. Specifications. Absolute Maximum Ratings at Ta=25 C

2SD1012. Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single SPA. Specifications. Absolute Maximum Ratings at Ta=25 C Ordering number : EN066F SD1 Bipolar Transistor 1V, 0.A, Low VCE(sat), NPN Single SPA http://onsemi.com Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Collector-to-Base

More information

2SA1418/2SC3648. Bipolar Transistor. ( )160V, ( )0.7A, Low VCE(sat), (PNP)NPN Single PCP. Applicaitons Color TV audio output, inverter

2SA1418/2SC3648. Bipolar Transistor. ( )160V, ( )0.7A, Low VCE(sat), (PNP)NPN Single PCP. Applicaitons Color TV audio output, inverter Ordering number : EN188C SA1418/SC648 Bipolar Transistor ( )16V, ( ).A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons Color TV audio output, inverter Features Adoption of FBET, MBIT

More information

BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor

BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor Features Switching and Amplifier High-Voltage: BC556, V CEO = -65 V Low-Noise: BC559, BC560 Complement to BC546, BC547, BC548, BC549,

More information

High-speed switching Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm) High allowable power dissipation

High-speed switching Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm) High allowable power dissipation Ordering number : EN811A MCH14/MCH4 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single MCPH http://onsemi.com Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption

More information

MMBT2222L, MMBT2222AL, SMMBT2222AL. General Purpose Transistors. NPN Silicon

MMBT2222L, MMBT2222AL, SMMBT2222AL. General Purpose Transistors. NPN Silicon L, AL, SAL General Purpose Transistors NPN Silicon Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications

More information

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series. Dual General Purpose Transistors PNP Duals

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series. Dual General Purpose Transistors PNP Duals BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications.

More information

Relay drivers, high-speed inverters, converters, and other general high-current switching applications

Relay drivers, high-speed inverters, converters, and other general high-current switching applications Ordering number : EN9C SB11/SD181 Bipolar Transistor ( )1V, ( )A, Low VCE(sat) (PNP)NPN Single TP/TP-FA http://onsemi.com Applications Relay drivers, high-speed inverters, converters, and other general

More information

KSD1616A NPN Epitaxial Silicon Transistor

KSD1616A NPN Epitaxial Silicon Transistor KSD66A NPN Epitaxial Silicon Transistor Features Audio Frequency Power Amplifier and Medium Speed Switching Complement to KSB6 / KSB6A February 205 TO-92. Emitter 2. Collector 3. Base KSD66A NPN Epitaxial

More information

M C C. MT110C08T1 MT110C12T1 MT110C16T1 MT110C18T Amp THYRISTOR MODULE. Features. 800~1800 Volts. Applications.

M C C.  MT110C08T1 MT110C12T1 MT110C16T1 MT110C18T Amp THYRISTOR MODULE. Features. 800~1800 Volts. Applications. Features pplications omponents 2736 Marilla Street Chatsworth!"# $%!"# Lead Free Finish/RoHS Compliant (NOTE 1)("P" Suffix designates RoHS Compliant. See ordering information) International standard package

More information

(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP

(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Ordering number : EN6D SA141/SC64 Bipolar Transistor (-)1V, (-)A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by /D... for use as output devices in complementary general purpose amplifier applications. High DC Current Gain hfe = 6000 (Typ) @ IC = 3.0 Adc Monolithic

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N355/D... designed for general purpose switching and amplifier applications. DC Current Gain hfe = 7 @ IC = 4 Adc Collector Emitter Saturation Voltage

More information

2STR1160. Low voltage fast-switching NPN power transistor. Features. Description. Applications

2STR1160. Low voltage fast-switching NPN power transistor. Features. Description. Applications Low voltage fast-switching NPN power transistor Datasheet - production data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23

More information

General Purpose Transistor

General Purpose Transistor NPN Silicon RoHS product for packing code suffix "G", Halogen free product for packing code suffix "H". MAXIMUM RATINGS Rating Symbol 2222 2222A Unit Collector Emitter Voltage O 3 4 Vdc SOT 23 Collector

More information

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. CollectorEmitter

More information

POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS

POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS The BUH50 has an application specific state of art die designed for use in 50 Watts HALOGEN electronic transformers and SWITCHMODE applications. This high voltage/high speed transistor exhibits the following

More information

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Preferred Devices PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias

More information