M C C. Revision: A 2016/02/07 MCMNP517 DFN2020-6U

Transcription

1 omponents 2736 Marilla Street Chatsworth!"# $%!"# MCMNP517 Features Halogen free available upon request by adding suffix "-HF" Super High Density Cell Design for Extremely Low DS(ON) Lead Free Finish/ohs Compliant ("P"Suffix designates ohs Compliant. See ordering information) Epoxy meets UL 94 V- flammability rating Moisture Sensitivity Level 1 Marking:517 Maximum ratings ( unless otherwise noted) N and P-Channel Enhancement Mode Field Effect Transistor DFN22-6U Parameter Symbol N-Channel P-Channel Unit D C Drain-Source Voltage V DS Gate-Source Voltage ±12 ±12 Continuous Drain Current (NOTE1) V V A E A B Drain Current M A Continous Source-Drain Diode Current I S A L Thermal esistance from Junction to Ambient (NOTE1) θja 167 /W J K Operating Junction Temperature T J 15 Storage Temperature T STG -55 ~+15 F F G Notes : H 1.Surface mounted on F4 board using the minimum recommended pad size. Equivalent Circuit INCHES MM DIM MIN MAX MIN MAX A B.8EF..23EF. C.2..5 D E F G H J K L.26TYP. Dimensions.65TYP. NOTE evision: A 216/2/7 1 of 6

2 N-ch MOSFET ELECTICAL CHAACTEISTICS( unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit STATIC CHAACTEISTICS Drain-source breakdown voltage V(B)DSS VGS = V, ID =25µA 12 V Zero gate voltage drain current IDSS VDS =16V,VGS = V 1 µa Gate-body leakage current IGSS VGS =±12V, VDS = V ±1 na Gate threshold voltage (note 2) Drain-source on-resistance(note 2) Forward tranconductance(note 2) Diode forward voltage DYNAMIC CHAACTEISTICS (note 4) Input Capacitance VGS(th) VDS =, ID =25µA.5 1 V DS(on) VGS =1V, ID =6A 24 mω VGS =4.5V, ID =5A 27 mω VGS =2.5V, ID =4A 42 mω VGS =1.8V, ID =2A 74 mω gfs VDS =5V, ID =3.8A 4 S VSD C iss I S=1A, VGS = V 1 V 63 pf Output Capacitance C oss VDS =1V,VGS =V,f =1MHz 164 pf everse Transfer Capacitance C rss 137 pf SWITCHING CHAACTEISTICS (note 3,4) Turn-on delay time td(on) 5.5 ns Turn-on rise time tr =5V,V DS =1V, 14 ns Turn-off delay time td(off) GEN =6Ω, L =1.7Ω 29 ns Turn-off fall time tf 1.2 ns Total Gate Charge Q g 12 nc V DS =1V, =6A, Gate-Source Charge Q gs 1 nc =1V Gate-Drain Charge Q gd 2 nc 2 of 6 evision: A 216/2/7

3 P-ch MOSFET ELECTICAL CHAACTEISTICS( unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit STATIC CHAACTEISTICS Drain-source breakdown voltage V(B)DSS VGS = V, ID =-25µA -12 V Zero gate voltage drain current IDSS VDS =-8V,VGS = V -1 µa Gate-body leakage current IGSS VGS =±8V, VDS = V ±1 na Gate threshold voltage (note 2) Drain-source on-resistance(note 2) Forward tranconductance(note 2) Diode forward voltage DYNAMIC CHAACTEISTICS (note 4) Input Capacitance (th) VDS =, ID =-25µA V DS(on) VGS =-4.5V, ID =-3.5A 45 mω VGS =-2.5V, ID =-3A 6 mω VGS =-1.8V, ID =-2A 9 mω gfs VDS =-5V, ID =-4.1A 6 S VSD IS= -3.3A, VGS = V -1.2 V C iss 74 pf Output Capacitance C oss VDS =-4V,VGS =V,f =1MHz 29 pf everse Transfer Capacitance C rss 19 pf SWITCHING CHAACTEISTICS (note 3,4) Turn-on delay time td(on) 2 ns V GEN =-4.5V,V DD =-4V, Turn-on rise time tr 53 ns =-3.3A, G =1Ω, Turn-off delay time td(off) 48 ns L =1.2Ω Turn-off fall time tf 2 ns Total Gate Charge Q g 9 nc V DS =-4V, =-4.1A, Gate-Source Charge Q gs 1.2 nc =-2.5V Gate-Drain Charge Q gd 1.6 nc Notes : 2.Pulse Test:Pulse width=3us,duty cycle 2%. 3.Switching characteristics are independent of operating junction temperature. 4.Graranted by design,not subject to producting. evision: A 216/2/7 3 of 6

4 Typical Characteristics N-Channel MOS M C C Output Ch aracteristics Transfer Ch aracteristics 2 15 =4.5V 4V 3.5V 3V 2.5V 2V 2 15 V DS =5V 1 5 =1.5V DAIN TO SOUCE VOLTAGE V DS GATE TO SOUCE VOLTAGE DS(ON) DS(ON) 8 8 ON-ESISTANCE DS(ON) =1.8V =2.5V =4.5V =1V ON-ESISTANCE DS(ON) =6A GATE TO SOUCE VOLTAGE Threshol d Voltage I S V SD.9 1 THESHOLD VOLTAGE V TH.8.7 =25uA SOUCE CUENT I S JUNCTION TEMPEATUE T J ( ) 1E SOUCE TO DAIN VOLTAGE V SD evision: A 216/2/7 4 of 6

5 P-Channel MOS -16 Output Characteristics -5 M C C Transfer C haracteristics V DS =-3V = -4.5V -4V -3.5V -3V -2.5V =-2V =-1.5V -3-2 = DAIN TO SOUCE VOLTAGE V DS GATE TO SOUCE VOLTAGE DS(ON) DS(ON) 18 2 ON-ESISTANCE DS(ON) 12 6 VGS=-1.8V VGS=-2.5V ON-ESISTANCE DS(ON) =-3.3A =1 VGS=-4.5V GATE TO SOUCE VOLTAGE I S V SD Threshold Voltage SOUCE CUENT I S -1 =1 THESHOLD VOLTAGE V TH =-25uA SOUCE TO DAIN VOLTAGE V SD AMBIENT TEMPEATUE ( ) evision: A 5 of 6 216/2/7

6 Ordering Information : Device Packing Part Number-TP Tape&eel:3.Kpcs/eel Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF ***IMPOTANT NOTICE*** Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Corp. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights,nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Corp. and all the companies whose products are represented on our website, harmless against all damages. ***LIFE SUPPOT*** MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Corporation. ***CUSTOME AWAENESS*** Counterfeiting of semiconductor parts is a growing problem in the industry. (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. evision: A 216/2/7 6 of 6