M C C. MCAC80N06Y. Features. N-Channel Power MOSFET DFN5060. Maximum 25 O. C Unless Otherwise Specified
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1 Features omponents Marilla treet Chatsworth!"# $%!"# Trench Power MV MOFET technology Very low on-resistance (ON) Halogen free available upon request by adding suffix "-HF" Epoxy meets UL 94 V-0 flammability rating Moisture ensitivity Level 1 Maximum 25 O C Unless Otherwise pecified ymbol Parameter ating Unit V rain-source Voltage 60 V I rain Current-Continuous T C = 25 C 80 A (Note 7) T C = 0 C 58 I M Pulsed rain Current (Note 3) 320 A MCAC80N06Y N-Channel Power MOFET FN5060 thja thjc Maximum Junction to Ambient t s(note1) teady-tate(note1,4) Maximum Junction to Case teady-tate C/W C/W B A H V ate-source Voltage ±20 V P M Maximum Power issipation (Note 1) T c = 25 C 85 T c = 0 C E A ingle pulse avalanche energy (Note 3) T J Operating Junction Temperature -55 to +150 T T torage Temperature -55 to +150 W mj C C N E J F C K EQUIVALENT CICUIT L M Top View Pin1 Bottom View Pin1 imensions INCHE MM IM MIN MAX MIN MAX A B 0.0EF EF. C E F H K J L M N NOTE 1 of 5 evision: A
2 ELECTICAL CHAACTEITIC(T a =25 unless otherwise specified) M C C ymbol Parameter Conditions Min Typ Max Units TATIC PAAMETE BV rain-ource Breakdown Voltage I =250 A, V =0V V I T J =55 C 5 I ate-body leakage current V =0V, V =±20V ±0 na V (th) ate Threshold Voltage V =V, I =250 A V (ON) Zero ate Voltage rain Current tatic rain-ource On-esistance V =60V, V =0V V =V, g F iode Forward Voltage V =5V, 30 V iode Forward Voltage I =40A,V =0V V I Maximum Body-iode Continuous Current (Note 7) 80 A YNAMIC PAAMETE C iss Input Capacitance 3980 pf C oss Output Capacitance V =0V, V =30V, f=1mhz 690 pf C rss everse Transfer Capacitance 24 pf g ate resistance V =0V, V =0V, f=1mhz 2.5 WITCHIN PAAMETE Q g (V) Total ate Charge 67 nc Q g (4.5V) Total ate Charge 32 nc V =V, V =30V, Q gs ate ource Charge 12 nc Q gd ate rain Charge 8.5 nc t (on) Turn-on elay Time 15 ns t r Turn-on ise Time V =V, V =15V, L =2.5Ω, 8 ns t (off) Turn-off elay Time EN =3Ω 48 ns t f Turn-off Fall Time 12 ns t rr Body iode everse ecovery Time I F =Is,di/dt=500A/us 48 ns Q rr Body iode everse ecovery charge I F =Is,di/dt=500A/us 60 nc Note: V =4.5V, 1. The value of θja is measured with the device mounted on 1in2 F 4 board with 2oz. Copper, in a still air environment with TA =25 C. The Power dissipation PM is based on θja t s and the maximum allowed junction temperature of 150 C. The value in any given application depends on the user's specific board design. 2. The power dissipation P is based on TJ(MAX)=175 C, using junction tocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 3. ingle pulse width limited by junction temperature TJ(MAX)=175 C. 4. The θja is the sum of the thermal impedance from junction to case θjc and case to ambient. 5. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. 6. These curves are based on the junction to case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175 C. The OA curve provides a single pulse rating. 7. The maximum current rating is package limited. A m m evision: A 2 of 5
3 Typical Electrical and Thermal Characteristics M C C Fig 1: Output Characteristics Fig 2: Transfer Characteristics V =5V 60 I (A) I (A) C 25 C 0 V (V) V (V) Fig 4: Capacitance Characteristics 000 Ciss C - Capacitance (PF) 00 0 Coss V =0V f=1mhz Crss V (V) Fig 5: ds(on) vs. Temperature Fig 6: ate Charge Characteristics V =30V (on) _Normalized V =V V =4.5V V (V) Tj - Junction Temperature ( C) Qg (nc) evision: A 3 of 5
4 Typical Electrical and Thermal Characteristics Fig 7: Body-diode Forward Characteristics Fig 8: rain Current erating I - iode Current(A) C 25 C I- rain Current (A) V - iode Forward Voltage(V) TJ-Junction Temperature ( ) Fig 9: Power issipation Fig : afe Operation Area P tot (W) T A - Case Temp erature ( C) Vds rain -ource Voltage (V) r(t),normalized Effective Transient Thermal Impedance I- rain Current (A) evision: A quare Wave Pluse uration(sec) Fig 1 1: Normalized Maximum Transient Thermal Impedance 4 of 5
5 Ordering Information : evice Packing Part Number-TP Tape&eel:5Kpcs/eel Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF ***IMPOTANT NOTICE*** Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Corp. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights,nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Corp. and all the companies whose products are represented on our website, harmless against all damages. ***LIFE UPPOT*** MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Corporation. ***CUTOME AWAENE*** Counterfeiting of semiconductor parts is a growing problem in the industry. (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC istributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC istributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized ources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. evision: A 5 of 5
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More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 2.6mΩ (< 2.4mΩ ) R DS(ON) (at V GS =6V) < 3.2mΩ (< 3.0mΩ ) 100% UIS Tested 100% R g Tested TO-263
75V NChannel MOSFET eneral escription The uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power
More informationAdvanced Power Electronics Corp.
AP37GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -.A SS escription Advanced Power
More informationWPM3028 WPM3028. Descriptions. Features. Applications. Order information. Typical R DS(on) (mω) V GS =-10V V GS =-5V -30
WPM32 WPM32 Single P-Channel, -3V, -11.5A, Power MOSFET Http://www.sh-willsemi.com V DS (V) Typical R DS(on) (mω) -3 11@ =-1V 15 @ =-5V S S S G Descriptions The WPM32 is P-Channel enhancement MOS Field
More informationG S. Drain-Source Voltage 30 V Gate-Source Voltage ± 8 V at T = 70 C Continuous Drain Current 3. P D at T A =25 C Total Power Dissipation 1.
AP236AGN-HF-3 N-channel Enhancement-mode Power MOSFET Supports 2.5V Gate rive Lower On-resistance Surface-Mount evice R S(ON) 35mΩ RoHS-compliant, Halogen-free G S I 5A BV SS 3V escription Advanced Power
More informationP-Channel 60-V (D-S) MOSFET
AMP6-6B P-Channel 6-V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) -6 PRODUCT SUMMARY r DS(on) (mω) 6 @ V GS = -V 7 @ V GS = -4.5V ID(A)
More informationZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET
A Product Line of Diodes Incorporated ZXMCA86N8 0V SO8 Complementary Dual enhancement mode MOSFET Summary Device V (BR)DSS (V) Q G (nc) R DS(on) (Ω) (A) T A = 25 C Q 0 9.2 0.230 @ = V 2. 0.300 @ =.9 Q2-0
More informationAO4423/AO4423L 30V P-Channel MOSFET
AO3/AO3L 3V PChannel MOFET General escription The AO3/AO3L uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge with a 5V gate rating. This device is suitable for use
More informationFDS8949 Dual N-Channel Logic Level PowerTrench MOSFET
FDS899 Dual N-Channel Logic Level PowerTrench MOSFET V, 6A, 9mΩ Features Max r DS(on) = 9mΩ at V GS = V Max r DS(on) = 36mΩ at V GS =.5V Low gate charge High performance trench technology for extremely
More informationV DS. ESD Protected 100% UIS Tested 100% R g Tested
3V NChannel MOFET General escription The AO4468 combines advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). This device is ideal for load switch and battery
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 6.0mΩ (< 5.7mΩ ) R DS(ON) (at V GS =6V) < 7.9mΩ (< 7.6mΩ ) 100% UIS Tested 100% R g Tested G S G
AOT86L/AOB86L 8V NChannel MOSFET eneral escription The AOT86L/AOB86L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction
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AO47 PChannel Enhancement Mode Field Effect Transistor General escription The AO47 uses advanced trench technology to provide excellent R S(ON), low gate charge and low gate resistance. With the excellent
More informationMCC BC558A/B/C. Features. PNP Silicon Amplifier Transistor 625mW
omponents 2736 Marilla Street Chatsworth!"# $%!"# BC556A/B/C BC557A/B/C A/B/C Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) 15 o C Junction Temperature
More informationAM4825P. Analog Power P-Channel 30-V (D-S) MOSFET THERMAL RESISTANCE RATINGS. Symbol Maximum Units
P-Channel 3-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications
More informationMDQ18N50G N-Channel MOSFET 500V, 20.0A, 0.27Ω
MDQ18N5 N-Channel MOFET 5V MDQ18N5 N-Channel MOFET 5V, 2.A,.27Ω. eneral Description These N-channel MOFET are produced using advanced MagnaChip s MOFET Technology, which provides low onstate resistance,
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON emiconductor, please visit our website at www.onsemi.com ON emiconductor and the ON emiconductor logo are trademarks of emiconductor Components Industries, LLC dba
More informationN-Channel 100-V (D-S) MOSFET
AM744NA N-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) PRODUCT SUMMARY r DS(on) (mω) 5 @ V GS = V 7 @ V GS = 4.5V ID (A) 5 4 Typical
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON emiconductor, please visit our website at www.onsemi.com ON emiconductor and the ON emiconductor logo are trademarks of emiconductor Components Industries, LLC dba
More informationAO V P-Channel MOSFET V DS. -60V I D (at V GS =-10V) -4A R DS(ON) (at V GS = -4.5V)
6V PChannel MOFET General escription The AO4441 uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge. This device is suitable for use as a load switch or in PWM applications.
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ECRIPTION The MC4866 is the N-Channel enhancement mode power field effect transistors are using trench MO technology. This advanced technology has been especially tailored to minimize on-state resistance,
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N-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is ESD protected and
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AON74 3V PChannel MOFET General escription The AON74 uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge with a 5V gate rating. This device is suitable for use as
More informationGreen. Features. Equivalent Circuit. Top View Pin Out Configuration. Part Number Case Packaging DMTH10H005SCT TO220AB 50 Pieces/Tube
Green V +75 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary R DS(ON) I D T C = +25 C V 5mΩ @V GS = V 4A BV DSS Description This new generation MOSFET features low on-resistance and fast switching,
More informationMCC. 2N5401 )HDWXUHV. PNP Silicon Amplifier Transistor 625mW 0HFKDQLFDO'DWD TO-92
omponents 20736 Marilla Street Chatsworth!"# $%!"# 2N5401 )HDWXUHV Through Hole Package 1 o C Junction Temperature Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)
More informationSymbol. Maximum Drain-Source Voltage 600 Gate-Source Voltage Continuous Drain Current A,F Pulsed Drain Current B Peak diode recovery dv/dt V DS V GS
6,.34A NChannel MOFET eneral escription The is fabricated using an advanced high voltage MOFET process that is designed to deliver high levels of performance and robustness in popular ACC applications.
More informationSMC4860NA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 30V, ID = 50A APPLICATIONS PART NUMBER INFORMATION
MC86NA ingle N-Channel MOFET DECRIPTION MC86 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize
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100V P-Channel Enhancement Mode MOSFET Voltage -100 V Current -2.6 A Features SOT-223 R DS(ON), V GS @-10V,I D @-2.6A
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NChannel Enhancement Mode Field Effect Transistor General escription The AO4468 uses advanced trench technology to provide excellent R (ON) and low gate charge. This device is suitable for use as a load
More informationFEATURES. Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ± 25
N-Channel Reduced Q g, Fast witching MOFET i48by PROUCT UMMARY V (V) R (on) (Ω) I (A).8 at V G = V 9 3.3 at V G = 4. V 7 FEATURE Halogen-free According to IEC 649-- Available TrenchFET Power MOFET High-Efficient
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A Product Line of Diodes Incorporated ZXMHC0A07N8 00V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 00V 2.9nC 0.70Ω @ = 0V.0A 0.90Ω @ = 6.0V
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