SMC V N-Channel MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION PART NUMBER INFORMATION

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1 ECRIPTION The MC4866 is the N-Channel enhancement mode power field effect transistors are using trench MO technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior witching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications MC4866PC-TRG ROH Compliant This is Halogen Free MC V N-Channel MOFET FEATURE 30V / 45A R (ON) = 7.5mΩ(typ.)@VG = 10V R (ON) = 9.5mΩ(typ.)@VG = 4.5V Fast switch Low gate charge Improved dv/dt capability High power and current handlingcapability 100% EA Guaranteed APPLICATION High Frequency C/C convertersportabl POL Applications PIN CONFIGURATION PIN1 G PIN1 G FN3.3X3.3A-8 Top View PART NUMBER INFORMATION MC 4866 PC - TR G a b c d e a : Company name. b : Product erial number. c : Package code d : Handling code e : Green produce code 1

2 ORERING INFORMATION Part Number Package Code Handling Code hipping MC4866PC-TRG PC : FN3.3X3.3A-8 TR : Tape&Reel 3K/Reel FN3.3X3.3A-8 : Only available in tape and reel packaging. ABOLUTE MAXIMUM RATING (TC = 25 C Unless otherwise noted ) ymbol Parameter Typical Unit V rain-ource Voltage 30 V VG Gate-ource Voltage ±20 V I Continuous rain Current A TC=25 C 45 TC=100 C 28 A IM Pulsed rain Current A 90 A EA ingle Pulse Avalanche energy L=0.1mH B 47 mj IA Avalanche Current B 32 A Power issipation F TC=25 C 29 W P Power issipation A urface mounted TC=25 C 3.0 TC=100 C 1.5 W TJ Operation Junction Temperature -55/150 C TTG torage Temperature Range -55/150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL ATA ymbol Parameter Typ Max Unit RθJA Thermal Resistance-Junction to Ambient A teady-tate - 60 C/W RθJL Thermal Resistance Junction to Lead A teady-tate C/W 2

3 ELECTRICAL CHARACTERITIC(TJ = 25 C Unless otherwise noted ) ymbol Parameter Condition Min Typ Max Unit tatic Parameters BV rain-ource Breakdown Voltage VG =0V,I =250μA 30 V VG(th) Gate Threshold Voltage V =VG,I =250μA V IG Gate Leakage Current V =0V,VG=±20V ±100 na I Zero Gate Voltage rain Current V =30V,VG =0V TJ =25 C V =24V,VG =0V, TJ =125 C 10 1 μa R(ON) rain-source On-Resistance VG =10V,I=24A VG =4.5V, I=16A mω Gfs Forward Transconductance V =10V,I =8A 9.7 ource-rain oide V iode Forward Voltage B I=1A,VG=0V V I Continuous ource Current 20 A ynamic Parameters Qg Total Gate Charge 7.8 Qgs Gate-ource Charge V =15V,VG =4.5V I =20A.1.4 Qgd Gate-rain Charge 4.4 Ciss Input Capacitance 720 Coss Output Capacitance V =25V,VG =0V f =1MHZ 158 Crss Reverse Transfer Capacitance 72 nc pf Note: RG Gate Resistance VG=0V, V=0V, F=1MHZ 2.5 Ω 4.8 Turn-On Time E tr V=15V, VGEN=10V, RG=3.3Ω, Turn-Off Time E tf 8.1 td(on) td(off) A. urface mounted on FR-4 board using 1 sq in pad, 1 oz Cu. B. The EA data shows Max. rating. The test condition is V=25V,VG=10V,L=0.1mH,IA=30A,RG=25Ω,tarting TJ=25 C. C. UI tested and pulse width limited by maximum junction temperature 150 C (initial temperature TJ=25 C).. The data tested by pulsed, pulse width 300u, duty cycle 2% E. Pulsed width limited by maximum junction temperature. F. The power dissipation P is based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful in setting the upper. n The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3

4 TYPICAL CHARACTERITIC 4

5 TYPICAL CHARACTERITIC t1 T2 uty Cycle, =t1/t2 witching Time Waveform Gate Chrge Waveform Ton Toff VG Td(on) Tr Td(off ) Tf 10V Qg VG 10% Qgs Qgd 90% V Charge 5

6 FN3.3X3.3A-8 PACKAGE IMENION ymbol imensions In Millimeters imensions In Inches Min. Max. Min. Max. A A REF REF. A2 0~0.05 0~ E E E b e L L L2 0~0.1 0~0.004 L3 0~0.1 0~0.004 H Ɵ