Symbol Parameter TSB20N60S TSP20N60S TSF20N60S Unit 20* 20* I D -Continuous (TC = 100 ) 12*

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1 TSP20N60S,TSF20N60S, TSB20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ- FET is suitable for various AC/DC power conversion inswitching mode operation for higher efficiency. September, 2013 SJ-FET Features = 150 Typ. RDS(on) = 0.16Ω Ultra Low Gate Charge (typ. Qg = 63nC) 100% avalanche tested Rohs Compliant D2-PAK (TO-263) Absolute Maximum Ratings Symbol Parameter TSB20N60S TSP20N60S TSF20N60S Unit V DSS Drain-Source Voltage 600 V Drain Current -Continuous (TC = 25 ) 20* 20 20* I D -Continuous (TC = 100 ) 12* 12 12* A I DM Drain Current - Pulsed (Note 1) 60* 60 60* A V GSS Gate-Source voltage ±30 V E AS Single Pulsed Avalanche Energy (Note 2) 600 mj I AR Avalanche Current (Note 1) 20 A E AR Repetitive Avalanche Energy (Note 1) 20.5 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (TC = 25 ) -Derate above 25 T J, T STG Operating and Storage Temperature Range -55 to +150 T L Maximum Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds 300 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter TSB20N60S TSP20N60S TSF20N60S Unit R θjc Thermal Resistance, Junction-to-Case /W R θcs Thermal Resistance, Case-to-Sink Typ /W R θja Thermal Resistance, Junction-to-Ambient /W W W/

2 Symbol Parameter Conditions Min Typ Max Unit Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS IGTSF IGSSR On Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0V, ID = 250µA, TJ = V VGS = 0V, ID = 250µA, TJ = V ID = 250µA, Referenced to V/ VDS = 600V, VGS = 0V VDS =480V, TC = µa µa VGS = 30V, VDS = 0V na VGS = -30V, VDS = 0V na VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 10A Ω gfs Forward Transconductance VDS = 40V, ID =5A (Note 4) S Rg Gate Resistance F=1MHz, open drain Ω Dynamic Characteristics Ciss Electrical Characteristics TC = 25 unless otherwise noted Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz pf Coss Output Capacitance pf Crss Reverse Transfer Capacitance pf Switching Characteristics td(on) Turn-On Delay Time VDD = 400V, ID = 10A RG = ns tr Turn-On Rise Time 20Ω(Note 4, 5) ns td(off) Turn-Off Delay Time ns tf Turn-Off Fall Time ns Qg Total Gate Charge VDS = 480V, ID = 20A VGS = 10V (Note 4, 5) nc Qgs Gate-Source Charge nc Qgd Gate-Drain Charge nc Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current A ISM Maximum Pulsed Drain-Source Diode Forward Current A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 10A V trr Reverse Recovery Time VGS = 0V, IS = 10A dif/dt ns Qrr Reverse Recovery Charge =100A/µs (Note 4) µc Irrm Peak Reverse Recovery Current A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=10.5mH, I AS =10A, VDD=150V, Starting TJ=25 3. I SD 20A, di/dt 200A/us, V DD BV DSS, Starting TJ = Pulse Test: Pulse width 300us, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics

3 Typical Performance Characteristics Drain-source voltage VDS (V) Drain-source voltage VDS (V) Figure 1: On-Region C Figure 2: On-Region C On-Resistance(Ω) VGS (V) Figure 3: Transfer Charateristics ID (A) Figure 4: On-Resistance vs. Drain Current (ID) Temperature ( C) Figure 5: On-Resistance vs. Junction Temperature T J ( C) Figure 6: Break Down vs. Junction Temperature

4 Typical Performance Characteristics VSD (V) Figure 7: Body-Diode Characteristics Qg (nc) Figure 8: Gate-Charge Characteristics VDS (V) Figure 9: Capacitance Characteristics C=f(VDS), VGS=0V, f=1mhz VDS (V) Figure 10: C oss stored Energy VDS (V) Figure 11: Maximum Forward Biased Safe Operating Area Pulse Width (s) Figure 12: Single Pulse Power Rating Junction to Case

5 Typical Performance Characteristics Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance T CASE ( C) Figure 13: Avalanche energy T CASE ( C) Figure 14: Current De-rating

6 Typical Performance Characteristics Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-Ambient Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance

7

8 PKG TO-220F

9 PKG TO-263

10 PKG TO-220

Symbol Parameter TSB10N60S TSP10N60S TSF10N60S Unit V DSS Drain-Source Voltage 600 V Drain Current -Continuous (TC = 25 ) 9.5*

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