N-Channel CICLON NexFET Power MOSFETs CSD16404Q5A

Transcription

1 Features Product ummary Ultra Low Qg & Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoH Compliant G 3 G 5 7 V 5 V Q g.5 nc Q gd.7 nc R (on) =.5V 5.7 mω =V. mω V th. V Halogen Free QFN 5mm x mm Plastic Package Top View Maximum Values (T A =5 o C unless otherwise stated) ymbol Parameter Value Units V rain to ource Voltage 5 V VG Gate to ource Voltage + / - V I Continuous rain Current, TC = 5 C A Continuous rain Current A IM Pulsed rain Current, TA = 5 C 35 A P Power issipation 3. W TJ, TTG Operating Junction and torage Temperature Range -55 to 5 C EA Avalanche Energy, single pulse I =A, L =.mh, RG = 5Ω mj. Rθja = C/W on in Cu ( oz.) on. thick FR PCB.. Pulse width 3 µs, duty cycle % R (ON) vs. R (on) - On Resistance (m Ω ) = A = 5ºC - Gate to ource Voltage (V) Gate Charge Gate Voltage (V) V =.5V = A Qg - Gate Charge (nc) Ordering Information Type Package Package Media Qty hip QFN 5X Plastic Package 3 inch reel 5 Tape and Reel

2 Electrical Characteristics (T A = 5 O C unless otherwise stated) ymbol Parameter Test Conditions Min Typ Max Units tatic Characteristics BV rain to ource Voltage VG = V, I = 5µA 5 V I rain to ource Leakage Current VG = V, V = V µa IG Gate to ource Leakage Current V = V, VG = +/-V na VG(th) Gate to ource Threshold Voltage V = VG, I = 5µA... V R(on) rain to ource On Resistance VG =.5V, I = A mω VG = V, I = A. 5. mω gfs Transconductance V = 5V, I = A 57 ynamic Characteristics CI Input Capacitance 9 pf CO Output Capacitance VG = V, V =.5V f = MHz 5 pf CR Reverse Transfer Capacitance pf Rg eries Gate Resistance. Ω Qg Gate Charge Total (.5V).5.5 nc Qgd Gate Charge Gate to rain.7 nc V =.5V, I = A Qgs Gate Charge Gate to ource 3. nc Qg(th) Gate Charge at Vth.5 nc QO Output Charge V = 3V, VG = V nc td(on) Turn On elay Time ns V =.5V tr Rise Time 5 ns VG =.5V I = A td(off) Turn Off elay Time ns RG =. Ω tf Fall Time 5 ns iode Characteristics V iode Forward Voltage I = A, VG = V.5. V Qrr Reverse Recovery Charge Vdd=3V, IF = A, di/dt = 3A/µs nc trr Reverse Recovery Time Vdd=3V, IF = A, di/dt = 3A/µs ns

3 Thermal Characteristics (T A = 5 O C unless otherwise stated) ymbol Parameter Min Typ Max Units Thermal Characteristics R θjc Thermal Resistance Junction to Case C/W R θja Thermal Resistance Junction to Ambient 3, 5 C/W 3. R θjc is determined with the device mounted on a in square oz. Cu pad on a.5x.5 in.in thick FR board. R θjc is guaranteed by design while R θca is determined by the user s board design.. evice mounted on FR Material with in of oz. Cu. Max Rθja =5 o C/W when mounted on in of oz. Cu. Max Rθja = o C/W when mounted on min pad area of oz. Cu. Zth JA Normalized thermal impedance ingle Pulse uty Cycle =t /t P t t Rth JA = 9 C/W (min Cu) T j = P * Zth JA * Rth JA.... Pulse duration (s) Figure : Transient Thermal Impedance

4 Typical MOFEharacteristics (T A = 5 o C unless otherwise stated) 5 5 V = 5V rain Current (A) 3 = V =.5V = 3.5V = 3.V =.5V rain Current (A) 3 = -55ºC = 5ºC V - rain to ource Voltage (V) Gate to ource Voltage (V) Figure : aturation Characteristics Figure 3: Transfer Characteristics V =.5V = A 3..5 = V, f = MHz Gate Voltage (V) Capacitance (nf)..5. C I = C G +C G C O =C +C G C R = C G Qg - Gate Charge (nc) Figure : Gate Charge V - rain to ource Voltage (V) Figure 5: Capacitance.5.3 = 5µA = A (th) - Threshold Voltage (V) Case temperature ( C) R (on) - On Resistance (m Ω ) = 5ºC - Gate to ource Voltage (V) Figure : Threshold Voltage vs. Temperature Figure 7: On Resistance vs. Gate Voltage

5 Typical MOFEharacteristics (T A = 5 o C unless otherwise stated) Normalized On Resistance = A = V Case temperature ( C) Figure : On Resistance vs. Temperature I - ource to rain Current (A).... = 5ºC..... V - ource to rain Voltage (V) Figure 9: Typical iode Forward Voltage - rain Current (A) µs ms Area limited ms by R (ON) ms. ingle pulse Rth JA =9 C/W (min Cu) C... V - rain Voltage (V) Figure : Maximum afe Operating Area I (AV) - Peak Avalanche Current (A) = 5ºC..... t AV - Time in Avalanche () Figure : ingle Pulse Unclamped Inductive witching - rain Current (A) Case Temperature ( o C) Figure : Maximum rain Current vs. Temperature

6 Package imensions MILLIMETER IM MIN NOM MAX A.9.. b c E E E e H..7 BC.5. K. L.5..7 L..3. α MILLIMETER INCHE IM Min Max Min Max F F F F F F F F F F F..5.7.

7 Q5A Tape and Reel Information Note:. PROCKET HOLE PITCH CUMULATIVE TOLERANCE +/-.. CAMBER NOT TO EXCEE mm IN mm, NONCUMULATIVE OVER 5mm 3. MATERIAL:BLACK TATIC IIPATIVE POLYTYRENE. ALL IMENION ARE IN mm (UNLE OTHERWIE PECIFIE) 5. A AN B MEAURE ON A PLANE.3mm ABOVE THE BOTTOM OF THE POCKET Package Marking Information Location: st Line C = Fixed Characters NNNNN = Product Code nd Line (ate Code) YY = Last digits of the Year WW = -digit Work Week C = Country of Origin > Philippines = P > Taiwan = T > China = C 3rd Line LLLLL= Last 5 digits of the Wafer Lot # C Y

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