PTU2N8 0/PTD2N8 0. Absolute Maximum Ratings Tc=25 unless other wise noted. Thermal Characteristics. Features. 600V N-Channel MOSFET

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1 PTU2N8 0/PTD2N8 0 HIGH VOLTAGE N-Channel MOSFET 600V N-Channel MOSFET Features Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge :12 nc (Typ.) BVDSS=800V,ID=2A Lower R DS(on) : 6.3Ω 100% Avalanche Tested TO 252 TO 251 G Gate,D Drain,S Sourse Absolute Maximum Ratings Tc=25 unless other wise noted Symbol Parameter WGU/D2N8 0 Units S Drain-Sourse Voltage 800 V I D Drain Current -continuous (Tc=25 ) 2 A -continuous (Tc=100 ) 1.26 A Gate-Sourse Voltage ±30 V E AS Single Plused Avanche Energy (Note1) 180 mj I AR Avalanche Current (Note2) 2 A P D Power Dissipation (Tc=25 ) 50 W T J,T STG Operating and Storage Temperature Range -55 ~ +150 TL Maximum lead temperature for soldering purpose,1/8 from case for 5 seconds 300 Thermal Characteristics Symbol Parameter Typ Max Units R θjc Thermal Resistance,Junction to Case /W R θca Thermal Resistance,Junction to Ambient* /W R θja Thermal Resistance,Junction to Ambient /W *When mounted on the minimum pad size recommended (PCB mounted) - 1 -

2 Electrical Characteristics Tc=25 unless other wise noted HIGH VOLTAGE N-Channel MOSFET Symbol Parameter Test Condition Min. Typ. Max Units Off Characteristics BS Drain-Sourse Breakdown Voltage ID=250μA,VGS= V BS / Breakdown Voltage Temperature I D =250μA,Reference TJ Conficient to V/ IDSS Zero Gate Voltage Drain Current Vds=800V, Vgs=0V μa Vds=640V, Tc= μa IGSSF Gate-body leakage Current, Vgs=+30V, Vds=0V na Forward IGSSR Gate-body leakage Current, Reverse Vgs=-30V, Vds=0V na On Characteristics (th) Date Threshold Voltage Id=250uA,Vds=Vgs V R DS(on) Static Drain-Sourse Id=1.0A,Vgs=10V Ω On-Resistance Dynamic Characteristics Ciss Input Capacitance pf VDS=25V,VGS=0, Coss Output Capacitance pf f=1.0mhz Crss Reverse Transfer Capacitance pf Switching Characteristics Td(on) Turn-On Delay Time ns Tr Turn-On Rise Time VDD=300V,ID=2A, ns Td(off) Turn-Off Delay Time RG=25Ω (Note 3,4) ns Tf Turn-Off Fall Time ns Qg Total Gate Charge nc VDS=640,VGS=10V, Qgs Gate-Sourse Charge nc ID=2A (Note 3,4) Qgd Gate-Drain Charge nc Drain-Sourse Diode Characteristics and Maximum Ratings I S Maximun Continuous Drain-Sourse Diode Forward Current A I SM Maximun Plused Drain-Sourse DiodeForwad Current A V SD Drain-Sourse Diode Forward Id=2A V Voltage trr Reverse Recovery Time I S =2A, =0V ns Qrr Reverse Recovery Charge di F /dt=100a/μs (Note3) μc *Notes 1, L=55mH, IAS=2A, VDD=50V, RG=25Ω, Starting TJ =25 C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width 300μs, Duty Cycle 2% 4, Essentially Independent of Operating Temperature - 2 -

3 Typical Characteristics I D, Drain Current [A] Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V μs Pulse Test 2. T C = 25 I D, Drain Current [A] o C 25 o C -55 o C 1. = 50V μs Pulse Test , Drain-Source Voltage [V] , Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 12 R DS(ON) [Ω ], Drain-Source On-Resistance = 20V = 10V Note : T J = I D, Drain Current [A] I DR, Reverse Drain Current [A] = 0V μs Pulse Test V SD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd = 160V = 400V Capacitance [pf] C iss C oss C rss 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] = 640V Note : I D = 2.4A , Drain-Source Voltage [V] Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics - 3 -

4 Typical Characteristics (Continued) BS, (Normalized) Drain-Source Breakdown Voltage = 0 V 2. I D = 250 μa R DS(ON), (Normalized) Drain-Source On-Resistance = 10 V 2. I D = 1.2 A T J, Junction Temperature [ o C] T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature I D, Drain Current [A] Operation in This Area is Limited by R DS(on) 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 10 ms DC 10μs 100μs 1 ms , Drain-Source Voltage [V] I D, Drain Current [A] T C, Case Temperature [ ] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature Z θ JC (t), Thermal Response D= N otes : Z θ JC (t) = 2.5 /W M ax. 2. D uty Factor, D =t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) single pulse P DM t 1 t t 1, Square W ave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve - 4 -

5 Gate Charge Test Circuit & Waveform 12V 200nF 50KΩ 300nF Same Type as DUT 10V Q g Q gs Q gd 3mA DUT Charge Resistive Switching Test Circuit & Waveforms R L 90% R G 10V DUT 10% t d(on) t r t d(off) tf t on t off Unclamped Inductive Switching Test Circuit & Waveforms L 1 E AS = LI 2 AS BS BS - I D BS I AS R G I D (t) 10V DUT (t) t p t p Time - 5 -

6 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + _ I SD L Driver R G Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = Gate Pulse Period 10V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD Body Diode Forward Voltage Drop - 6 -

7 Package Dimension TO ± ±0.30 (0.50) (4.34) (0.50) 0.70 ± ± ± ± ±0.20 MAX TYP [2.30±0.20] 2.70 ± ± ± ± TYP [2.30±0.20] 6.10 ± ± ± ± ± ±0.20 (5.34) (5.04) (1.50) (2XR0.25) (0.70) MIN ± ± ±0.20 (0.10) (3.05) (0.90) (1.00) 0.76 ±

8 Package Dimension TO ± ± ±0.20 (0.50) (4.34) (0.50) 0.50 ± ± ± ± ±0.20 MAX ± ± ± ± TYP [2.30±0.20] 2.30TYP [2.30±0.20] 0.50 ±