G : GATE S : SOURCE D : DRAIN. Symbol VDS VGS. Avalanche Current EAS EAR TSTG

Transcription

1 M25N3Q-HF N-hannel RoH evice Halogen Free Features - ingle rive Requirement..2(5.).5(4.7).(.25).7(.7) - Low On-resistance. - Fast witching haracteristic. - ynamic dv/dt rating..57(4.).5(3.).244(6.2).22(5.) - Repetitive valanche Rated. ircuit diagram.5(.27)..5(.27).6(.4) G G : GTE : OURE : RIN.6(.55).53(.35).2(.5).3(.33).(.25).4(.).69(.75).53(.35) imensions in inches and (millimeter) Maximum Ratings (at T=25 unless otherwise noted) Parameter ymbol alue Unit rain-source voltage 3 Gate-source voltage G ±2 ontinuous drain current T = 25, G = T =, G = I 25 6 Pulsed drain current (Note ) IM valanche urrent I 2 valanche L=.mH, I=2, =5 E 4 mj Repetitive valanche L=.5mH (Note 2) ER.3 mj Power dissipation T = 25 T = P 2.5 W Thermal resistance from junction to ambient (Note 3) RθJ 5 /W Thermal resistance from junction to case RθJ 25 /W Junction temperature TJ -55 to +5 torage temperature TTG -55 to +5 Notes:. Pulse width limited by maximum junction temperature. 2. uty cycle %. 3. urface mounted on in² copper pad of FR-4 board, 25 /W when mounted on minimum copper pad. omchip Technology O., LT. RE: Page

2 Electrical haracteristics (at T=25 unless otherwise noted) Parameter ymbol onditions Min Typ Max Unit tatic rain-source breakdown voltage (R) G=, I=25µ 3 Gate threshold voltage G(th) =G, I=25µ Gate-source leakage current IG G=±2 ± n Zero gate voltage drain current I =3, G= =3, G=, Tj=25 25 µ rain-source on-resistance (Note ) R(ON) G=, I= G=4.5, I= mω Forward transconductance (Note ) GF =5, I= 32 ynamic Input capacitance Output capacitance Reverse transfer capacitance iss 26 =5, G= oss rss f=mhz pf Turn-on delay time (Note & 2) td(on) 4.6 Rise time (Note & 2) Turn-off delay time (Note & 2) tr td(off) =5, I= G=, RG=2.7Ω ns Fall time (Note & 2) tf 4 Total gate charge ( Note & 2) Qg =5, I=, G= 4.6 Total gate charge (Note & 2) Gate-sour ce charge (Note & 2) Gate-drain charge (Note & 2) Qg =5, I=, G= Qgs =5, I= 6.4 Qgd G= 9.2 n Gate resistance Rg =, G= 5m, f=mhz ource-rain iode 2.5 Ω Forward d iode voltage (Note ) IF=I, G=.2 ontinuous source-drain diode current Pulse diode forward current (Note 3) I IM (Note ) 4 Reverse recovery time Reverse recovery charge trr Qrr IF=I, dif/dt=/µs 6.2 ns n Notes:. Pulse Test: Pulse width 3μs, duty cycle 2%. 2. Independent of operating temperature. 3. Pulse width limited by maximum junction temperature. omchip Technology O., LT. RE: Page 2

3 TYPIL RTING N HRTERITI URE ( M25N3Q-HF) Fig. - Typical Output haracteristics Fig.2 - tatic rain-ource On-tate Resistance vs. rain urrent 24 G=7,, 9, rain urrent, I () G=6 G=5 G=2 G=4 G=3 tatic rain-ource On-tate Resistance, R(ON) (mω) G = 4.5 G = rain to ource oltage, () rain urrent, I () Fig.3 - tatic rain-ource On-tate Resistance vs. Gate-ource oltage Fig.4 - apacitance vs. rain-ource oltage 9 I = tatic rain-ource On-tate Resistance, R(ON) (mω) apacitance, (pf) iss oss rss Gate-ource oltage, G () rain-ource oltage, () Fig.5 - Forward Transfer dmittance vs. rain urrent Fig.6 - Gate harge haracteristics Forward Transfer dmittance, GF ()... = Pulsed T=25.. Gate-ource oltage, G () =5 I= rain urrent, I () Total Gate harge, Qg (n) omchip Technology O., LT. RE: Page 3

4 Reel Taping pecification P P d T F E W P 2 W YMOL d ±. 5.2 ±. 2. ± ±.. ±.5 3. ± ±.4.25 ±.4.3 ± ± ±.2.52 ±. YMOL E F P P P W W.75 ±. 5.5 ±.5. ±. 4. ±. 2. ±.5.69 ±.4.27 ±.2.35 ±.4.57 ±.4.79 ± omchip Technology O., LT. RE: Page 4

5 Marking ode Part Number M25N3Q-HF Marking ode 4N3 4 N3 Pin Product type marking code uggested P Layout IZE E E tandard Packaging ase Type REEL ( pcs ) REEL PK Reel ize 2,5 3 omchip Technology O., LT. RE: Page 5