N Channel Enhancement Mode Silicon Gate

Transcription

1 SEMIONDUTOR TEHNIAL DATA Order this document by MGPN6ED/D N hannel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co packaged with a soft recovery ultra fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Its new 6 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. o packaged IGBTs save space, reduce assembly time and cost. This new E series introduces an energy efficient, ESD protected, and rugged short circuit device. Industry Standard TO 22 Package High Speed: Eoff = 6 J per Amp typical at 2 High Voltage Short ircuit apability s minimum at 2, 4 V Low On Voltage 2. V typical at. A Soft Recovery Free Wheeling Diode is included in the Package Robust High Voltage Termination ESD Protection Gate Emitter Zener Diodes G E IGBT & DIODE IN TO VOLTS SHORT IRUIT RATED LOW ON VOLTAGE G E ASE 22A 9 STYLE 9 TO 22AB MAXIMUM RATINGS (TJ = 2 unless otherwise noted) Rating Symbol Value Unit ollector Emitter Voltage VES 6 ollector Gate Voltage (RGE =. MΩ) VGR 6 Gate Emitter Voltage ontinuous VGE ± 2 ollector urrent T = 2 T = 9 Repetitive Pulsed urrent () Total Power T = 2 Derate above 2 I2 I9 IM 22 PD Operating and Storage Junction Temperature Range TJ, Tstg to Adc Apk Watts W/ Short ircuit Withstand Time (V = 4, dc,, RG = 2 Ω) tsc s Thermal Resistance Junction to ase IGBT Junction to ase Diode Junction to Ambient RθJ RθJ RθJA Maximum Lead Temperature for Soldering Purposes, / from case for seconds TL 26 Mounting Torque, 6 32 or M3 screw lbfin (.3 Nm) () Pulse width is limited by maximum junction temperature. Repetitive rating. Designer s Data for Worst ase onditions The Designer s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate worst case design. Designer s is a trademark of Motorola, Inc. /W Motorola, Inc. IGBT 99Device Data

2 ELETRIAL HARATERISTIS (TJ = 2 unless otherwise noted) haracteristic Symbol Min Typ Max Unit OFF HARATERISTIS ollector to Emitter Breakdown Voltage (VGE =, I = 2 µadc) Temperature oefficient (Positive) Zero Gate Voltage ollector urrent (VE = 6, VGE = ) (VE = 6, VGE =, ) V(BR)ES Gate Body Leakage urrent (VGE = ± 2, VE = ) IGES µadc ON HARATERISTIS () ollector to Emitter On State Voltage (dc, I = 4. Adc) (dc, I = 4. Adc, ) (dc, I =. Adc) Gate Threshold Voltage (VE = VGE, I =. madc) Threshold Temperature oefficient (Negative) IES VE(on) VGE(th) Forward Transconductance (VE =, I =. Adc) gfe 3. Mhos mv/ µadc mv/ DYNAMI HARATERISTIS Input apacitance Output apacitance Transfer apacitance (VE = 2, VGE =, f =. MHz) ies 779 pf oes res 3 SWITHING HARATERISTIS () Turn On Delay Time td(on) 46 ns Rise Time tr 34 Turn Off Delay Time (V = 36, I =. Adc, td(off) 2 Fall Time dc, L = 3 H, tf 226 RG = 2 Ω) Turn Off Switching Loss Energy losses include tail Eoff.32.4 mj Turn On Switching Loss Eon. Total Switching Loss Ets.43 Turn On Delay Time td(on) 42 ns Rise Time tr 26 Turn Off Delay Time (V = 36, I =. Adc, td(off) 24 Fall Time dc, L = 3 H 2 ) tf 22 RG = 2 Ω, TJ = Turn Off Switching Loss Energy losses include tail Eoff.4 mj Turn On Switching Loss Eon.6 Total Switching Loss Ets.64 Gate harge DIODE HARATERISTIS Diode Forward Voltage Drop (IE = 3.2 Adc) (IE = 3.2 Adc, ) (IE = 6. Adc) (V = 36, I =. Adc, dc) QT 39.2 n Q.7 Q2 7.4 () Pulse Test: Pulse Width 3 µs, Duty ycle 2%. (continued) VFE Motorola IGBT Device Data

3 I ELETRIAL HARATERISTIS continued (TJ = 2 unless otherwise noted) haracteristic Symbol Min Typ Max Unit DIODE HARATERISTIS continued Reverse Recovery Time trr 7 ns (IF =. Adc, VR R = 36, ta dif/dt = 2 A/µs) tb 39 Reverse Recovery Stored harge QRR 7 µ Reverse Recovery Time trr 9 ns (IF =. Adc, VR R = 36, ta 2 dif/dt = 2 A/µs, ) tb 63 Reverse Recovery Stored harge QRR 27 µ INTERNAL PAKAGE INDUTANE Internal Emitter Inductance (Measured from the emitter lead.2 from package to emitter bond pad) LE 7. nh I, OLLETOR URRENT (AMPS) 2 2 TJ = 2 2 V 7. V V 2. V VGE = V I, OLLETOR URRENT (AMPS) V 7. V V 2. V VGE = V Figure. Output haracteristics Figure 2. Output haracteristics, OLLETOR URRENT (AMPS) VE = V s PULSE WIDTH 2 V E, OLLETOR TO EMITTER VOLTAGE (VOLTS) s PULSE WIDTH I =. A VGE, GATE TO EMITTER VOLTAGE (VOLTS) TJ, JUNTION TEMPERATURE ( ) 6. A 4. A Figure 3. Transfer haracteristics Figure 4. ollector To Emitter Saturation Voltage versus Junction Temperature Motorola IGBT Device Data 3

4 , APAITANE (pf) 6 res oes ies TJ = 2 VGE = V V GE, GATE TO EMITTER VOLTAGE (VOLTS) Qg, TOTAL GATE HARGE (n) Q Q2 QT TJ = 2 V = 3 V I =. A Figure. apacitance Variation Figure 6. Gate To Emitter Voltage versus Total harge, TOTAL ENERGY LOSSES (mj) E TS E TS, TOTAL ENERGY LOSSES (mj) VDD = 36 V I =. A 6. A 4. A RG, GATE RESISTANE (OHMS) TJ, JUNTION TEMPERATURE ( ) Figure 7. Total Energy Losses versus Gate Resistance V = 36 V RG = 2 E off, TURN OFF ENERGY LOSSES (mj) E TS, TOTAL ENERGY LOSSES (mj) V = 36 V RG = 2 I =. A 6. A Figure. Total Energy Losses versus Junction Temperature I, OLLETOR URRENT (AMPS) RG, GATE RESISTANE (OHMS) VDD = 36 V I =. A 6. A 4. A 4. A Figure 9. Total Energy Losses versus ollector urrent Figure. Turn Off Losses versus Gate Resistance 4 Motorola IGBT Device Data

5 E off, TURN OFF ENERGY LOSSES (mj) V = 36 V RG = I =. A 7 2 TJ, JUNTION TEMPERATURE ( ) 6. A 4. A E off, TURN OFF ENERGY LOSSES (mj) V = 36 V RG = I, OLLETOR URRENT (AMPS) Figure. Turn Off Losses versus Junction Temperature Figure 2. Turn Off Losses versus ollector urrent I F, INSTANTANEOUS FORWARD URRENT (AMPS) 2 I, OLLETOR URRENT (AMPS) RGE = VFE, EMITTER TO OLLETOR VOLTAGE (VOLTS) Figure 3. Forward haracteristics versus urrent Figure 4. Reverse Biased Safe Operating Area Motorola IGBT Device Data

6 PAKAGE DIMENSIONS H Q Z L V G B N D A K F T U S R J T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANING PER ANSI Y4.M, ONTROLLING DIMENSION: INH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INHES MILLIMETERS DIM MIN MAX MIN MAX A B D F G H J K L N Q R S T U V.4. Z. 2.4 ASE 22A 9 TO 22AB ISSUE Z STYLE 9: PIN. GATE 2. OLLETOR 3. EMITTER 4. OLLETOR 6 MGPN6ED/D Motorola IGBT Device Data