TA = 25 C unless otherwise noted. Symbol Parameter Value Units

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1 2N425 2N425 B E TO-92 This device is designed for use as general purpose amplifiers and switches requiring collector currents of µa to ma. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol Parameter Value Units VEO ollector-emitter Voltage 3 V VBO ollector-base Voltage 3 V VEBO Emitter-Base Voltage 4. V I ollector urrent - ontinuous 2 ma TJ, Tstg Operating and Storage Junction Temperature Range -55 to +5 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: ) These ratings are based on a maximum junction temperature of 5 degrees. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal haracteristics TA = 25 unless otherwise noted Symbol haracteristic Max Units 2N425 P D Total Device Dissipation Derate above mw mw/ RθJ Thermal Resistance, Junction to ase 83.3 /W RθJA Thermal Resistance, Junction to Ambient 2 /W 2 Fairchild Semiconductor orporation 2N425, Rev A

2 Electrical haracteristics TA = 25 unless otherwise noted Symbol Parameter Test onditions Min Max Units 2N425 OFF HARATERISTIS V (BR)EO ollector-emitter Breakdown Voltage* I =. ma, I B = 3 V V(BR)BO ollector-base Breakdown Voltage I = µa, I E = 3 V V(BR)EBO Emitter-Base Breakdown Voltage IE = µa, I = 4. V I BO ollector-utoff urrent V B = 2 V, I E = 5 na IEBO Emitter-utoff urrent VEB = 3. V, I = 5 na ON HARATERISTIS* h FE D urrent Gain V E =. V, I = 2. ma VE =. V, I = 5 ma VE(sat) ollector-emitter Saturation Voltage I = 5 ma, IB = 5. ma.4 V VBE(sat) Base-Emitter Saturation Voltage I = 5 ma, IB = 5. ma.95 V SMALL SIGNAL HARATERISTIS ob Output apacitance V B = 5. V, f = khz 4.5 pf ib Input apacitance VBE =.5 V, f = khz pf hfe Small-Signal urrent Gain I = 2. ma, VE = V, f =. khz I = ma, VE = 2 V, f = MHz NF Noise Figure VE = 5. V, I = µa, RS =. kω, f = Hz to 5.7 khz, *Pulse Test: Pulse Width 3 µs, Duty ycle 2.% db

3 Typical haracteristics 2N425 h - TYPIAL PULSED URRENT GAIN FE Typical Pulsed urrent Gain vs ollector urrent I - OLLETOR URRENT (ma) V =.V E V - OLLETOR EMITTER VOLTAGE (V) ESAT ollector-emitter Saturation Voltage vs ollector urrent β = 2 I - OLLETOR URRENT (ma) V - BASE EMITTER VOLTAGE (V) BESAT Base-Emitter Saturation Voltage vs ollector urrent β = 2 I - OLLETOR URRENT (ma) V - BASE EMITTER ON VOLTAGE (V) BE( ON) Base Emitter ON Voltage vs ollector urrent I - OLLETOR URRENT (ma) V E = V I - OLLETOR URRENT (na) BO. ollector-utoff urrent vs Ambient Temperature V = 25V B T A - AMBIENT TEMPERATURE ( ) APAITANE (pf) ommon-base Open ircuit Input and Output apacitance vs Reverse Bias Voltage obo ibo. REVERSE BIAS VOLTAGE (V)

4 2N425 Typical haracteristics NF - NOISE FIGURE (db) Noise Figure vs Frequency V = 5.V E I = µa, R S = 2Ω I =. ma, R = 2Ω S I = µa, R = 2. kω S. f - FREQUENY (khz) NF - NOISE FIGURE (db) Noise Figure vs Source Resistance I =. ma V E = 5.V f =. khz I = µa. R S - SOURE RESISTANE ( kω ) 5 Switching Times vs ollector urrent 5 Turn On and Turn Off Times vs ollector urrent t s t off TIME (ns) I c I B= I B2= t f t r TIME (ns) I c t on I B = V =.5V BE(OFF) I c t off I B= I B2= t on t d I - OLLETOR URRENT (ma) I - OLLETOR URRENT (ma) Power Dissipation vs Ambient Temperature P - POWER DISSIPATION (W) D TO-92 SOT-23 SOT o TEMPERATURE ( )

5 µ Ω Typical haracteristics 2N425 h - VOLTAGE FEEDBAK RATIO (x ) _ 4 re Voltage Feedback Ratio. I - OLLETOR URRENT (ma) h - INPUT IMPEDANE (k ) ie Input Impedance V E = V f =. khz.. I - OLLETOR URRENT (ma) h - OUTPUT ADMITTANE ( mhos) oe Output Admittance V E = V f =. khz. I - OLLETOR URRENT (ma) h - URRENT GAIN fe urrent Gain V E = V f =. khz. I - OLLETOR URRENT (ma)

6 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. AEx Bottomless oolfet ROSSVOLT DOME E 2 MOS TM EnSigna TM FAT FAT Quiet Series FAST DISLAIMER LIFE SUPPORT POLIY FAIRHILD S PRODUTS ARE NOT AUTHORIZED FOR USE AS RITIAL OMPONENTS IN LIFE SUPPORT DEVIES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRHILD SEMIONDUTOR ORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUT STATUS DEFINITIONS Definition of Terms FASTr GlobalOptoisolator GTO HiSe ISOPLANAR MIROWIRE OPTOLOGI OPTOPLANAR PAMAN POP PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITHER SMART START SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UH VX FAIRHILD SEMIONDUTOR RESERVES THE RIGHT TO MAKE HANGES WITHOUT FURTHER NOTIE TO ANY PRODUTS HEREIN TO IMPROVE RELIABILITY, FUNTION OR DESIGN. FAIRHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLIATION OR USE OF ANY PRODUT OR IRUIT DESRIBED HEREIN; NEITHER DOES IT ONVEY ANY LIENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G

TO-92 SOT-23 Mark: ZF. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TO-92 SOT-23 Mark: ZF. TA = 25 C unless otherwise noted. Symbol Parameter Value Units 2N426 MMBT426 2N426 / MMBT426 B E TO-92 SOT-23 Mark: ZF B E This device is designed for general purpose amplifier and switching applications at collector currents to µa as a switch and to ma as an amplifier.