TA = 25 C unless otherwise noted. Symbol Parameter Value Units
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1 BV26 BV26 E SOT-23 Mark: FD B PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 8 ma. Sourced from Process 61. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol Parameter Value Units V EO ollector-emitter Voltage 3 V V BO ollector-base Voltage 4 V V EBO Emitter-Base Voltage 1 V I ollector urrent - ontinuous 1.2 A T J, T stg Operating and Storage Junction Temperature Range -55 to *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 15 degrees. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal haracteristics TA = 25 unless otherwise noted Symbol haracteristic Max Units *BV26 P D Total Device Dissipation Derate above mw mw/ R θja Thermal Resistance, Junction to Ambient 357 /W *Device mounted on FR-4 PB 4 mm X 4 mm X 1.5 mm Fairchild Semiconductor orporation
2 Electrical haracteristics TA = 25 unless otherwise noted PNP Darlington Transistor (continued) Symbol Parameter Test onditions Min Typ Max Units BV26 OFF HARATERISTIS V (BR)EO ollector-emitter Breakdown Voltage I = 1 ma, I B = 3 V V (BR)BO ollector-base Breakdown Voltage I = 1 µa, I E = 4 V V (BR)EBO Emitter-Base Breakdown Voltage I E = 1 na, I = 1 V I BO ollector-utoff urrent V B = 3 V, I E =.1 µa I EBO Emitter-utoff urrent V EB = 1 V, I =.1 µa ON HARATERISTIS h FE D urrent Gain I = 1. ma, V E = 5. V I = 1 ma, V E = 5. V 4, 1, I = 1 ma, V E = 5. V 2, V E(sat) ollector-emitter Saturation Voltage I = 1 ma, I B =.1 ma 1. V V BE(sat) Base-Emitter Saturation Voltage I = 1 ma, I B =.1 ma 1.5 V SMALL SIGNAL HARATERISTIS f T urrent Gain - Bandwidth Product I = 3 ma, V E = 5. V, 22 MHz f = 1 MHz ollector apacitance V B = 3 V, I E =, f = 1. MHz 3.5 pf NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. Typical haracteristics h - TYPIAL PULSED URRENT GAIN (K) FE Typical Pulsed urrent Gain vs ollector urrent V E = 5V I - OLLETOR URRENT (A) V - OLLETOR EMITTER VOLTAGE (V) ESAT ollector-emitter Saturation Voltage vs ollector urrent β = I - OLLETOR URRENT (A)
3 PNP Darlington Transistor (continued) BV26 Typical haracteristics (continued) V - BASE EMITTER VOLTAGE (V) BESAT Base-Emitter Saturation Voltage vs ollector urrent β = I - OLLETOR URRENT (A) V - BASE EMITTER ON VOLTAGE (V) BE( ON) Base Emitter ON Voltage vs ollector urrent I - OLLETOR URRENT (A) V E = 5V I - OLLETOR URRENT (na) BO V ollector-utoff urrent vs Ambient Temperature B = 15V T A- AMBIENT TEMPERATURE ( ) APAITANE (pf) Input and Output apacitance vs Reverse Bias Voltage f = 1. MHz ib ob REVERSE VOLTAGE (V) 3 35 Power Dissipation vs Ambient Temperature P - POWER DISSIPATION (mw) D SOT o TEMPERATURE ( )
4 SOT-23 Tape and Reel Data SOT-23 Packaging onfiguration: Figure 1. ustomized Label Human Readable Label Antistatic over Tape Embossed arrier Tape Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3, units per 7" or 177cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 1, units per 13" or 33cm diameter reel. This and some other options are described in the Packaging Information table. These full reels are individually labeled and placed inside a standard intermediate made of recyclable corrugated brown paper with a Fairchild logo printing. One pizza box contains eight reels maximum. And these intermediate boxes are placed inside a labeled shipping box which comes in different sizes depending on the number of parts shipped. 3P 3P 3P 3P SOT-23 Packaging Information Packaging Option Standard (no flow code) D87Z Packaging type TNR TNR Qty per Reel/Tube/Bag 3, 1, Reel Size 7" Dia 13" Box Dimension (mm) 187x17x x343x64 Max qty per Box 24, 3, Weight per unit (gm) Weight per Reel (kg) mm x 342mm x 64mm Intermediate box for L87Z Option SOT-23 Unit Orientation Human Readable Label Note/omments Human Readable Label sample SOT-23 Tape Leader and Trailer onfiguration: Figure 2. Human readable Label 187mm x 17mm x 183mm Intermediate Box for Standard Option arrier Tape over Tape Trailer Tape 3mm minimum or 75 empty pockets omponents Leader Tape 5mm minimum or 125 empty pockets 2 Fairchild Semiconductor International September 1999, Rev.
5 SOT-23 Tape and Reel Data, continued SOT-23 Embossed arrier Tape onfiguration: Figure 3. T P P2 D D1 E1 B Wc F E2 W Tc K P1 A User Direction of Feed Dimensions are in millimeter Pkg type A B W D D1 E1 E2 F P1 P K T Wc Tc SOT-23 (8mm) / / / / / / min 3.5 +/ / / / / / /-.2 Notes: A, B, and K dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and ). 2 deg maximum.5mm maximum B Typical component cavity center line.5mm maximum 2 deg maximum component rotation Sketch A (Side or Front Sectional View) omponent Rotation SOT-23 Reel onfiguration: Figure 4. A Sketch B (Top View) omponent Rotation Typical component center line Sketch (Top View) omponent lateral movement W1 Measured at Hub Dim A Max Dim A max Dim N 7" Diameter Option See detail AA B Min Dim See detail AA W3 Dim D min 13" Diameter Option W2 max Measured at Hub DETAIL AA Tape Size Reel Option Dimensions are in inches and millimeters Dim A Dim B Dim Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) 8mm 7" Dia / / / / mm 13" Dia / / / / September 1999, Rev.
6 SOT-23 Package Dimensions SOT-23 (FS PKG ode 49) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram):.82 2 Fairchild Semiconductor International September 1998, Rev. A1
7 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. AEx Bottomless oolfet ROSSVOLT DOME E 2 MOS TM EnSigna TM FAT FAT Quiet Series FAST DISLAIMER LIFE SUPPORT POLIY FAIRHILD S PRODUTS ARE NOT AUTHORIZED FOR USE AS RITIAL OMPONENTS IN LIFE SUPPORT DEVIES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRHILD SEMIONDUTOR ORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUT STATUS DEFINITIONS Definition of Terms FASTr GlobalOptoisolator GTO HiSe ISOPLANAR MIROWIRE OPTOLOGI OPTOPLANAR PAMAN POP PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITHER SMART START SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UH VX FAIRHILD SEMIONDUTOR RESERVES THE RIGHT TO MAKE HANGES WITHOUT FURTHER NOTIE TO ANY PRODUTS HEREIN TO IMPROVE RELIABILITY, FUNTION OR DESIGN. FAIRHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLIATION OR USE OF ANY PRODUT OR IRUIT DESRIBED HEREIN; NEITHER DOES IT ONVEY ANY LIENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G
TA = 25 C unless otherwise noted. Symbol Parameter Value Units
BP52 BP52 SOT-223 B E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1. A. Sourced from Process
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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MPSH81 MMBTH81 MPSH81 / MMBTH81 E E B TO-92 SOT-23 Mark: 3D B PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mhz with collector currents in the 1.0 ma
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KSA03 KSA03 Color TV Audio Output Color TV Vertical Deflection Output TO-92L. Emitter 2. Collector 3. Base PNP EPITAXIAL SILICON TRANSISTOR Absolute Maximum Ratings T a =25 C unless otherwise noted Symbol
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High Voltage and High Reliability High Speed Switching Wide SOA TO-220.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings =25 C unless otherwise noted Symbol Parameter Value Units
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KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier Collector Current : I C = -A Collector Power Dissipation : P C = 2W Marking 7 9 8 P Y W W July 2005 SOT-89. Base 2. Collector 3.
More informationKSP13/14. V CE =5V, I C =10mA
KSP3/4 KSP3/4 Darlington Transistor Collector-Emitter Voltage: V CES =30V Collector Power Dissipation: P C (max)=625mw TO-92. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute
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Audio Frequency Power Amplifier Complement to KSD47A Collector Current : I C = -A Collector Power Dissipation : P C = 800mW Suffix -C means Center Collector (. Emitter 2. Collector 3. Base) TO-92. Emitter
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Low Frequency Amplifier Complement to KSC815 Collector-Base Voltage: V CBO = -60V Collector Power Dissipation: P C = 400mW Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1.
More informationKSC1845. h FE2 V CE =6V, I C =1mA. Classification P F E U h FE2 200 ~ ~ ~ ~ 1200
KSC845 KSC845 Audio Frequency Low Noise Amplifier Complement to KSA992 TO-92. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a =25 C unless otherwise noted Symbol
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KSP KSP VHF/UHF transistor NPN Epitaxial Silicon Transistor TO-9. Base. Emitter. Collector Absolute Maximum Ratings T a =5 C unless otherwise noted Symbol Parameter Value Units V CBO Collector-Base Voltage
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High Voltage Switching Low Power Switching Regulator DC-DC Converter High Breakdown Voltage Low Collector Saturation Voltage High Speed Switching 1 TO-126 1. Emitter 2.Collector 3.Base PNP Silicon Transistor
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KSE3006/3007 High oltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control KSE3006/3007 TO-220.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum
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More informationDistributed by: www.jameco.com -8-8-4242 The content and copyrights of the attached material are the property of its owner. Connection Diagram 448 448SE SOT-2 2 5H MARKING MMBD448 5H MMBD448CA MMBD448CC
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KSE3008/3009 High oltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control KSE3008/3009 TO-220.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum
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D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to
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