TA = 25 C unless otherwise noted. Symbol Parameter Value Units. V V V CBO Collector-Base Voltage 2N5088 2N5089
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1 B E 2N5088 2N5089 TO-92 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from µa to 50 ma. MMBT5088 MMBT5089 SOT-23 Mark: Q / R B E 2N5088 / MMBT5088 / 2N5089 / MMBT5089 Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol Parameter alue Units EO ollector-emitter oltage 2N5088 2N BO ollector-base oltage 2N5088 2N EBO Emitter-Base oltage 4.5 I ollector urrent - ontinuous 00 ma T J, T stg Operating and Storage Junction Temperature Range -55 to +50 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: ) These ratings are based on a maximum junction temperature of 50 degrees. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal haracteristics TA = 25 unless otherwise noted Symbol haracteristic Max Units 2N5088 2N5089 *MMBT5088 *MMBT5089 P D Total Device Dissipation Derate above mw mw/ R θj Thermal Resistance, Junction to ase 83.3 /W R θja Thermal Resistance, Junction to Ambient /W *Device mounted on FR-4 PB.6" X.6" X 0.06." 200 Fairchild Semiconductor orporation 2N5088/2N5089/MMBT5088/MMBT5089, Rev A
2 Electrical haracteristics OFF HARATERISTIS TA = 25 unless otherwise noted NPN General Purpose Amplifier (continued) Symbol Parameter Test onditions Min Max Units (BR)EO ollector-emitter Breakdown oltage* I =.0 ma, IB = (BR)BO ollector-base Breakdown oltage I = 00 µa, IE = IBO ollector utoff urrent B = 20, IE = B = 5, I E = I EBO Emitter utoff urrent EB = 3.0, I = 0 EB = 4.5, I = 0 ON HARATERISTIS hfe D urrent Gain I = 00 µa, E = I =.0 ma, E = I = 0 ma, E = 5.0 * E(sat) ollector-emitter Saturation oltage I = 0 ma, IB =.0 ma 0.5 BE(on) Base-Emitter On oltage I = 0 ma, E = na na na na 2N5088 / MMBT5088 / 2N5089 / MMBT5089 SMALL SIGNAL HARATERISTIS f T urrent Gain - Bandwidth Product I = 500 µa, E = 5.0 ma, f = 20 MHz 50 MHz cb ollector-base apacitance B = 5.0, I E = 0, f = 00 khz 4.0 pf eb Emitter-Base apacitance BE = 0.5, I = 0, f = 00 khz 0 pf h fe Small-Signal urrent Gain I =.0 ma, E = 5.0, 5088 f =.0 khz 5089 NF Noise Figure I = 00 µa, E = 5.0, 5088 R S = 0 kω, 5089 f = 0 Hz to 5.7 khz db db 3 *Pulse Test: Pulse Width 300 µs, Duty ycle 2.0% Spice Model NPN (Is=5.9f Xti=3 Eg=. af=62.37 Bf=.22K Ne=.394 Ise=5.9f Ikf=4.92m Xtb=.5 Br=.27 Nc=2 Isc=0 Ikr=0 Rc=.6 jc=4.07p Mjc=.374 jc=.75 Fc=.5 je=4.973p Mje=.446 je=.75 Tr=4.673n Tf=82.7p Itf=.35 tf=4 Xtf=7 Rb=0)
3 Typical haracteristics h - TYPIAL PULSED URRENT GAIN FE - OLLETOR-EMITTER OLTAGE () BESAT Typical Pulsed urrent Gain vs ollector urrent I - OLLETOR URRENT (ma) Base-Emitter Saturation oltage vs ollector urrent I - OLLETOR URRENT (ma) E = 5.0 β = 0 - OLLETOR-EMITTER OLTAGE () ESAT - BASE-EMITTER ON OLTAGE () BEON NPN General Purpose Amplifier (continued) ollector-emitter Saturation oltage vs ollector urrent β = I - OLLETOR URRENT (ma) Base-Emitter ON oltage vs ollector urrent I - OLLETOR URRENT (ma) E = 5.0 2N5088 / MMBT5088 / 2N5089 / MMBT5089 I - OLLETOR URRENT (na) BO 0 ollector-utoff urrent vs Ambient Temperature = 45 B T A- AMBIENT TEMPERATURE ( )
4 HARATERISTIS RELATIE TO ALUE AT T = 25 Typical haracteristics (continued) APAITANE (pf) A te Input and Output apacitance vs Reverse Bias oltage f =.0 MHz ob REERSE BIAS OLTAGE () Normalized ollector-utoff urrent vs Ambient Temperature T A - AMBIENT TEMPERATURE ( ) - OLLETOR OLTAGE () E NF - NOISE FIGURE (db) NPN General Purpose Amplifier (continued) ontours of onstant Gain Bandwidth Product (f T ) I - OLLETOR URRENT (ma) Wideband Noise Frequency vs Source Resistance E = MHz 50 MHz 25 MHz 00 MHz 75 MHz BANDWIDTH = 5.7 khz I = 00 µa I = 30 µa I = 0 µa 0,000 2,000 5,000 0,000 20,000 50,000 00,000 R S - SOURE RESISTANE ( Ω ) 2N5088 / MMBT5088 / 2N5089 / MMBT NF - NOISE FIGURE (db) Noise Figure vs Frequency I = 200 µa, R S = 0 kω I = 00 µa, R S = 0 kω I =.0 ma, R S = 500 Ω I =.0 ma, R S= 5.0 kω = 5.0 E f - FREQUENY (MHz) P - POWER DISSIPATION (mw) D SOT-23 Power Dissipation vs Ambient Temperature TO o TEMPERATURE ( )
5 Typical haracteristics (continued) R - SOURE RESISTANE ( Ω ) S R - SOURE RESISTANE ( Ω ) S 0,000 5,000 2,000,000 ontours of onstant Narrow Band Noise Figure 500 E = 5.0 f = 00 Hz 200 BANDWIDTH = 20 Hz 3.0 db 4.0 db 6.0 db 8.0 db 0 db 2 db 4 db ,000 I - OLLETOR URRENT ( µ A) ontours of onstant Narrow Band Noise Figure.0 db 2.0 db 3.0 db 4.0 db 500 E = 5.0 f = 0kHz 200 BANDWIDTH = 2.0kHz I - OLLETOR URRENT ( µ A) 6.0 db 8.0 db R - SOURE RESISTANE ( Ω ) S R - SOURE RESISTANE ( Ω ) S 0,000 5,000 2,000,000 ontours of onstant Narrow Band Noise Figure 500 E = 5.0 f =.0 khz BANDWIDTH 200 = 200 Hz 2.0 db 3.0 db 4.0 db 6.0 db 8.0 db ,000 I - OLLETOR URRENT ( µ A) NPN General Purpose Amplifier (continued) ontours of onstant Narrow Band Noise Figure 8.0 db 2.0 db 3.0 db 500 E = 5.0 f =.0 MHz 200 BANDWIDTH = 200kHz I - OLLETOR URRENT ( µ A) 4.0 db 7.0 db 5.0 db 6.0 db 2N5088 / MMBT5088 / 2N5089 / MMBT5089
6 Typical ommon Emitter haracteristics (f =.0 khz) HARATERISTIS RELATIE TO ALUE( =5) E Typical ommon Emitter haracteristics h re h oe h ie I =.0mA 0.9 f =.0kHz h fe T A = OLLETOR OLTAGE () E HARATERISTIS RELATIE TO ALUE(I =ma) Typical ommon Emitter haracteristics f =.0kHz h ie and h re h oe h fe h fe I - OLLETOR URRENT (ma) h ie h re h oe HARATERISTIS RELATIE TO ALUE(T =25 ) A h oe h ie NPN General Purpose Amplifier (continued) Typical ommon Emitter haracteristics E = 5.0 f =.0kHz I =.0mA h oe h fe h re h ie T J - JUNTION TEMPERATURE ( ) h re h fe h ie h re h fe h oe 2N5088 / MMBT5088 / 2N5089 / MMBT5089 3
7 TO-92 Tape and Reel Data TO-92 Packaging onfiguration: Figure.0 FSINT sample FAIRHILD SEMIONDUTOR ORPORATION HTB:B LOT: BK74B09 QTY: 0000 TAPE and REEL OPTION See Fig 2.0 for various Reeling Styles NSID: PN2222N SPE: D/: D9842 SPE RE: B2 FSINT QA RE: (FSINT) F63TNR sample LOT: BK74B09 QTY: 2000 FSID: PN222N SPE: D/: D9842 QTY: SPE RE: D/2: QTY2: PN: N/F: F (F63TNR)3 5 Reels per Intermediate Box F63TNR ustomized 375mm x 267mm x 375mm Intermediate Box ustomized TO-92 TNR/AMMO PAKING INFROMATION Packing Style Quantity EOL code Reel A 2,000 D26Z AMMO PAK OPTION See Fig 3.0 for 2 Ammo Pack Options E 2,000 D27Z Ammo M 2,000 D74Z P 2,000 D75Z Unit weight = 0.22 gm Reel weight with components =.04 kg Ammo weight with components =.02 kg Max quantity per intermediate box = 0,000 units 327mm x 58mm x 35mm Immediate Box ustomized 5 Ammo boxes per Intermediate Box F63TNR 333mm x 23mm x 83mm Intermediate Box FSINT ustomized (TO-92) BULK PAKING INFORMATION EOL ODE DESRIPTION LEADLIP DIMENSION QUANTITY J8Z TO-8 OPTION STD NO LEAD LIP 2.0 K / BOX J05Z TO-5 OPTION STD NO LEAD LIP.5 K / BOX NO EOL ODE L34Z TO-92 STANDARD STRAIGHT FOR: PKG 92, 94 (NON PROELETRON SERIES), 96 TO-92 STANDARD STRAIGHT FOR: PKG 94 (PROELETRON SERIES BXXX, BFXXX, BSRXXX), 97, 98 NO LEADLIP NO LEADLIP 2.0 K / BOX 2.0 K / BOX BULK OPTION See Bulk Packing Information table FSINT 2000 units per EO70 box for std option Anti-static Bubble Sheets 4mm x 02mm x 5mm Immediate Box 5 EO70 boxes per intermediate Box 530mm x 30mm x 83mm Intermediate box ustomized FSINT 0,000 units maximum per intermediate box for std option 200 Fairchild Semiconductor orporation March 200, Rev. B
8 TO-92 Tape and Reel Data, continued TO-92 Reeling Style onfiguration: Figure 2.0 Machine Option A (H) Machine Option E (J) Style A, D26Z, D70Z (s/h) Style E, D27Z, D7Z (s/h) TO-92 Radial Ammo Packaging onfiguration: Figure 3.0 FIRST WIRE OFF IS OLLETOR ADHESIE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP FIRST WIRE OFF IS EMITTER ADHESIE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM ORDER STYLE D74Z (M) ORDER STYLE D75Z (P) FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM FIRST WIRE OFF IS OLLETOR (ON PKG. 92) ADHESIE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP September 999, Rev. B
9 TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension onfiguration: Figure 4.0 P Pd Hd b Ha H HO L d L S W WO W2 t W t P F P2 DO ITEM DESRIPTION SYMBOL DIMENSION PO Base of Package to Lead Bend b (max) User Direction of Feed omponent Height Lead linch Height Ha HO (+/ ) (+/ ) omponent Base Height H (+/ ) omponent Alignment ( side/side ) Pd (max) omponent Alignment ( front/back ) Hd 0.03 (max) omponent Pitch P (+/ ) Feed Hole Pitch PO (+/ ) Hole enter to First Lead P 0.50 (+0.009, -0.00) Hole enter to omponent enter P (+/ ) Lead Spread F/F (+/- 0.00) Lead Thickness d 0.08 (+0.002, ) ut Lead Length L (max) Taped Lead Length L (+0.05, ) Taped Lead Thickness t (+/ ) arrier Tape Thickness t 0.02 (+/ ) TO-92 Reel onfiguration: Figure 5.0 arrier Tape Width Hold - down Tape Width Hold - down Tape position Feed Hole Position W WO W W (+0.020, -0.09) (+/- 0.02) (max) (+/ ) Sprocket Hole Diameter DO 0.57 (+0.008, ) Lead Spring Out S (max) Note : All dimensions are in inches. ELETROSTATI SENSITIE DEIES D4 D ITEM DESRIPTION SYSMBOL MINIMUM MAXIMUM F63TNR ustomized D2 Reel Diameter D Arbor Hole Diameter (Standard) D (Small Hole) D ore Diameter D Hub Recess Inner Diameter D Hub Recess Depth W W2 W W3 Flange to Flange Inner Width W Hub to Hub enter Width W Note: All dimensions are inches D3 July 999, Rev. A
10 TO-92 Package Dimensions TO-92 (FS PKG ode 92, 94, 96) : Scale : on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): Fairchild Semiconductor International January 2000, Rev. B
11 SOT-23 Tape and Reel Data SOT-23 Packaging onfiguration: Figure.0 ustomized Human Readable Antistatic over Tape Embossed arrier Tape Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 77cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 0,000 units per 3" or 330cm diameter reel. This and some other options are described in the Packaging Information table. These full reels are individually labeled and placed inside a standard intermediate made of recyclable corrugated brown paper with a Fairchild logo printing. One pizza box contains eight reels maximum. And these intermediate boxes are placed inside a labeled shipping box which comes in different sizes depending on the number of parts shipped. 3P 3P 3P 3P SOT-23 Packaging Information Packaging Option Standard (no flow code) D87Z Packaging type TNR TNR Qty per Reel/Tube/Bag 3,000 0,000 Reel Size 7" Dia 3" Box Dimension (mm) 87x07x83 343x343x64 Max qty per Box 24,000 30,000 Weight per unit (gm) Weight per Reel (kg) mm x 342mm x 64mm Intermediate box for L87Z Option SOT-23 Unit Orientation Human Readable Note/omments Human Readable sample SOT-23 Tape Leader and Trailer onfiguration: Figure 2.0 Human readable 87mm x 07mm x 83mm Intermediate Box for Standard Option arrier Tape over Tape Trailer Tape 300mm minimum or 75 empty pockets omponents Leader Tape 500mm minimum or 25 empty pockets 2000 Fairchild Semiconductor International September 999, Rev.
12 SOT-23 Tape and Reel Data, continued SOT-23 Embossed arrier Tape onfiguration: Figure 3.0 T P0 P2 D0 D E B0 Wc F E2 W Tc K0 P A0 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 W D0 D E E2 F P P0 K0 T Wc Tc SOT-23 (8mm) 3.5 +/ / / / / / min / / / / / / /-0.02 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-48 rotational and lateral movement requirements (see sketches A, B, and ). 20 deg maximum 0.5mm maximum B0 Typical component cavity center line 0.5mm maximum 20 deg maximum component rotation Sketch A (Side or Front Sectional iew) omponent Rotation SOT-23 Reel onfiguration: Figure 4.0 A0 Sketch B (Top iew) omponent Rotation Typical component center line Sketch (Top iew) omponent lateral movement W Measured at Hub Dim A Max Dim A max Dim N 7" Diameter Option See detail AA B Min Dim See detail AA W3 Dim D min 3" Diameter Option W2 max Measured at Hub DETAIL AA Tape Size Reel Option Dimensions are in inches and millimeters Dim A Dim B Dim Dim D Dim N Dim W Dim W2 Dim W3 (LSL-USL) 8mm 7" Dia / / / / mm 3" Dia / / / / September 999, Rev.
13 SOT-23 Package Dimensions SOT-23 (FS PKG ode 49) : Scale : on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): Fairchild Semiconductor International September 998, Rev. A
14 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. AEx Bottomless oolfet ROSSOLT DOME E 2 MOS TM EnSigna TM FAT FAT Quiet Series FAST DISLAIMER LIFE SUPPORT POLIY FAIRHILD S PRODUTS ARE NOT AUTHORIZED FOR USE AS RITIAL OMPONENTS IN LIFE SUPPORT DEIES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROAL OF FAIRHILD SEMIONDUTOR ORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUT STATUS DEFINITIONS Definition of Terms FASTr GlobalOptoisolator GTO HiSe ISOPLANAR MIROWIRE OPTOLOGI OPTOPLANAR PAMAN POP PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITHER SMART START SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UH X FAIRHILD SEMIONDUTOR RESERES THE RIGHT TO MAKE HANGES WITHOUT FURTHER NOTIE TO ANY PRODUTS HEREIN TO IMPROE RELIABILITY, FUNTION OR DESIGN. FAIRHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLIATION OR USE OF ANY PRODUT OR IRUIT DESRIBED HEREIN; NEITHER DOES IT ONEY ANY LIENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G
TA = 25 C unless otherwise noted. Symbol Parameter Value Units
BV26 BV26 E SOT-23 Mark: FD B PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 8 ma. Sourced from Process 61. Absolute Maximum Ratings*
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BP52 BP52 SOT-223 B E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1. A. Sourced from Process
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E SOT-23 Mark: ED B This device is designed for general purpose amplifier applications at collector currents to 5 ma. Sourced from Process 19. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol
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TN6717A NZT6717 TN6717A / NZT6717 B E TO-226 SOT-223 B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0
More informationTO-92 SOT-23 Mark: ZF. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N426 MMBT426 2N426 / MMBT426 B E TO-92 SOT-23 Mark: ZF B E This device is designed for general purpose amplifier and switching applications at collector currents to µa as a switch and to ma as an amplifier.
More informationSOT-23 Mark: 2A. = 25 C unless otherwise noted T A. Symbol Parameter Value Units
B E 2N3906 TO-92 MMBT3906 SOT-23 Mark: 2A B E PZT3906 B SOT-223 E 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units. V V V CBO Collector-Base Voltage 2N5088 2N5089
B E N588 N589 TO-9 This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from µa to 5 ma. MMBT588 MMBT589 OT- Mark: Q / R B E Absolute Maximum Ratings*
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N425 2N425 B E TO-92 This device is designed for use as general purpose amplifiers and switches requiring collector currents of µa to ma. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol
More informationBC547 BC547A BC547B BC547C
BC547 BC547A BC547B BC547C BC547 / BC547A / BC547B / BC547C E B C TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
Discrete POWER & Signal Technologies C B E TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 ma. Sourced
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Discrete POWER & Signal Technologies C B E TO-92 NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 ma. Sourced from Process 21. See PN2369A
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
PN3563 PN3563 C B E TO-92 NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 ma to 30 ma range. Sourced from Process 43. See
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
Discrete POWER & Signal Technologies C B E TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05.
More informationE C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N441 MMBT441 2N441 / MMBT441 E B E TO-92 SOT-23 Mark: 2X B NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 5 ma.
More informationTO-92 SOT-23 Mark: 3R. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N5771 MMBT5771 C 2N5771 / MMBT5771 C B E TO-92 SOT-23 Mark: 3R B E PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 ma. Sourced from
More informationSuperSOT-3 Mark: 3SS. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
C B E MPSA28 TO-92 MMBTA28 C SuperSOT-3 Mark: 3SS B E PZTA28 C C B SOT-223 E MPSA28 / MMBTA28 / PZTA28 NPN Darlington Transistor This device is designed for applications requiring extremely high current
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C B E PN2 PN2A TO-92 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 3 ma. Sourced from Process 68. MMBT2 MMBT2A C SOT-23 Mark:
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G S D J201 J202 TO-92 N-Channel General Purpose Amplifier MMBFJ201 MMBFJ202 G SOT-23 Mark: 62P / 62Q D S NOTE: Source & Drain are interchangeable J201 / J202 / MMBFJ201 / MMBFJ202 This device is designed
More informationE C B E. TO-92 SOT-23 Mark: 2T. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N443 MMBT443 C 2N443 / MMBT443 E C B E TO-92 SOT-23 Mark: 2T B PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 5
More informationDistributed by: www.jameco.com -8-83-4242 The content and copyrights of the attached material are the property of its owner. PN2222A MMBT2222A PZT2222A EB E TO-92 SOT-23 B SOT-223 Mark:P B E NPN General
More informationE C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N441 MMBT441 C 2N441 / MMBT441 E C B E TO-92 SOT-23 Mark: 2X B NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 5
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PN918 MMBT918 PN918 / MMBT918 C C B E TO-92 SOT-23 Mark: 3B B E NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1. ma to 3
More informationSOT-23 Mark: 1D. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
C B E MPSA42 TO-92 MMBTA42 C SOT-23 Mark: 1D B E PZTA42 C C B SOT-223 E MPSA42 / MMBTA42 / PZTA42 NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT
More informationElectrical haracteristics OFF HARATERISTIS TA = 25 unless otherwise noted PNP RF Transistor (continued) Symbol Parameter Test onditions Min Max Units
MPSH81 MMBTH81 MPSH81 / MMBTH81 E E B TO-92 SOT-23 Mark: 3D B PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mhz with collector currents in the 1.0 ma
More informationDistributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. PN4355 MMBT4355 C PN4355 / MMBT4355 E C B E TO-92 SOT-23 Mark: 81 B PNP
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C B E MPSA42 TO-92 MMBTA42 C SOT-23 Mark: 1D B E PZTA42 C C B SOT-223 E MPSA42 / MMBTA42 / PZTA42 NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
PN5432 PN PN PN5432 / PN / PN G S D TO-92 N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 58. See J108
More informationTYPE NPN PNP. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
E B E B E B E B 4 3 3 4 2 1 2 1 C C C C C C C C 4 2 3 3 4 2 1 1 SOIC-16 TRANSISTOR OR TYPE C 1 B 1 E 1 & C 2 B 2 E 2 C 3 B 3 E 3 & C 4 B 4 E 4 NPN PNP Quad NPN & PNP General Purpose Amplifier These complimentary
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MPS5179 C TO-92 B E MMBT5179 C SOT-23 Mark: 3C B E C E B PN5179 TO-92 MPS5179 / MMBT5179 / PN5179 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents
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G S D J309 J310 TO-92 N-Channel RF Amplifier MMBFJ309 MMBFJ310 G SOT-23 Mark: 6U / 6T D S NOTE: Source & Drain are interchangeable J309 / J310 / MMBFJ309 / MMBFJ310 This device is designed for VHF/UHF
More informationTO-92 SOT-23 Mark: 2A. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N396 / MMBT396 / MMPQ396 / PZT396 N Discrete POWER & Signal Technologies 2N396 MMBT396 E B E TO-92 SOT-23 Mark: 2A B MMPQ396 PZT396 E B E B E B E B SOI-6 SOT-223 B E This device is designed for general
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More information2N5210/MMBT5210 B E. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
N5/MMBT5 This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from µa to 5 ma. N5/MMBT5 BE TO-9 B E OT- Mark: M Absolute Maximum Ratings* TA =
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More informationE C E B. TO-92 SOT-23 Mark: 3D. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
MPSH81 MMBTH81 C MPSH81 / MMBTH81 E C E B TO-92 SOT-23 Mark: 3D B PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mhz with collector currents in the 1.0
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
G S D J111 J112 J113 N-Channel Switch TO-92 This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 1. Absolute Maximum
More information参考資料 E C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N44 MMBT44 2N44 / MMBT44 E B E TO-92 SOT-23 Mark: 2X B NPN General Pupse Amplifier This device is designed fr use as a medium pwer amplifier and switch requiring cllectr currents up t 5 ma. Abslute Maximum
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More informationTO-92 SOT-23 Mark: ZC. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
N MMBT N / MMBT B E TO-9 SOT-3 Mark: Z B E This device is designed as a general purpse amplifier and switch. The useful dynamic range extends t ma as a switch and t MHz as an amplifier. Abslute Maximum
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B E PN2222A TO-92 MMBT2222A This device is fr use as a medium pwer amplifier and switch requiring cllectr currents up t 5 ma. Surced frm Prcess 9. SOT-23 Mark: P B E PZT2222A E B SOT-223 Abslute Maximum
More informationTO-92 SOT-23 Mark: 83. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N44 MMBT44 2N44 / MMBT44 B E TO-92 SOT-23 Mark: 83 B E This device is designed for use as general purpose amplifiers and switches requiring collector currents to 5 ma. Absolute Maximum Ratings* TA = 25
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MPSH MMBTH MPSH / MMBTH E B TO-92 SOT-2 Mark: G B E This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the µa to ma range to MHz, and low frequency
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SEMIONDUTOR TEHNIAL DATA Order this document by 2N393/D NPN Silicon *Motorola Preferred Device OLLETOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Value Unit ollector Emitter Voltage VEO 4 Vdc ollector
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PN2222A TO-92 MMPQ2222 SOI-6 MMT2222A SOT-23 Mark: P PZT2222A SOT-223 NMT2222 SOT-6 Mark:. 2 Discrete POWR & Signal Technologies 2 2 This device is for use as a medium power amplifier and switch requiring
More informationDistributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. G S D 2N5457 2N5458 2N5459 TO-92 This device is a low level audio amplifier
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FDS776A N-Channel Logic Level PowerTrench MOSFET February 2 PRELIMINARY FDS776A General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process
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