BS270 N-Channel Enhancement Mode Field Effect Transistor

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April 995 BS70 N-Channel Enhancement Mode Field Effect Transistor General escription Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary,

They can be used in most applications requiring up to 500mA C.

1 April 995 BS70 N-Channel Enhancement Mode Field Effect Transistor General escription Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, MOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA C. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. 400mA, 60V. R S(ON) = V GS = 0V. High density cell design for low R S(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. G S Absolute Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter BS70 Units V SS rain-source Voltage 60 V V GR rain-gate Voltage (R GS < MΩ) 60 V V GSS Gate-Source Voltage - Continuous ±0 V - Non Repetitive (tp < 50µs) ±40 I rain Current - Continuous 400 ma - Pulsed 000 P Maximum Power issipation 65 mw erate Above 5 C 5 mw/ C T J,T STG Operating and Storage Temperature Range -55 to 50 C T L Maximum Lead Temperature for Soldering Purposes, /6" from Case for 0 Seconds THERMAL CHARACTERISTICS 300 C R θja Thermal Resistacne, Junction-to-Ambient 00 C/W 997 Fairchild Semiconductor Corporation BS70.SAM

2 Electrical Characteristics (T A = 5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV SS rain-source Breakdown Voltage V GS = 0 V, I = 0 µa 60 V I SS Zero Gate Voltage rain Current V S = 60 V, V GS = 0 V µa T J = 5 o C 500 µa I GSSF Gate - Body Leakage, Forward V GS = 0 V, V S = 0 V 0 na I GSSF Gate - Body Leakage, Reverse V GS = -0 V, V S = 0 V -0 na ON CHARACTERISTICS (Note ) V GS(th) Gate Threshold Voltage V S = V GS, I = 50 µa..5 V R S(ON) Static rain-source On-Resistance V GS = 0 V, I = 500 ma. Ω T J = 5 o C 3.5 V GS = 4.5 V, I = 75 ma.8 3 V S(ON) rain-source On-Voltage V GS = 0 V, I = 500 ma 0.6 V V GS = 4.5 V, I = 75 ma 0.4 I (ON) On-State rain Current V GS = 0 V, V S > V S(on) ma V GS = 4.5 V, V S > V S(on) g FS Forward Transconductance V S > V S(on), I = 00 ma ms YNAMIC CHARACTERISTICS C iss Input Capacitance V S = 5 V, V GS = 0 V, 0 50 pf C oss Output Capacitance f =.0 MHz 5 pf C rss Reverse Transfer Capacitance 4 5 pf SWITCHING CHARACTERISTICS (Note ) t on Turn-On Time V = 30 V, I = 500 m A, 0 ns t off Turn-Off Time V GS = 0 V, R GEN = 5 Ω 0 ns RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS I S Maximum Continuous rain-source iode Forward Current 400 ma I SM Maximum Pulsed rain-source iode Forward Current 000 ma V S rain-source iode Forward Voltage V GS = 0 V, I S = 400 ma (Note ) V Note:. Pulse Test: Pulse Width < 300µs, uty Cycle <.0%. BS70.SAM

3 Typical Electrical Characteristics I, RAIN-SOURCE CURRENT (A) V GS = 0V V S, RAIN-SOURCE VOLTAGE (V) Figure. On-Region Characteristics. R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE V GS =4.0V I, RAIN CURRENT (A) Figure. On-Resistance Variation with Gate Voltage and rain Current. 6.0 R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE V = 0V GS I = 500mA R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE V = 0V GS T = 5 C J 5 C -55 C T, JUNCTION TEMPERATURE ( C) J Figure 3. On-Resistance Variation with Temperature I, RAIN CURRENT (A) Figure 4. On-Resistance Variation with rain Current and Temperature. I, RAIN CURRENT (A) V = 0V S T = -55 C J 5 C V, GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. 5 C V th, NORMALIZE GATE-SOURCE THRESHOL VOLTAGE V S = VGS I = ma T, JUNCTION TEMPERATURE ( C) J Figure 6. Gate Threshold Variation with Temperature. BS70.SAM

4 S SS Typical Electrical Characteristics (continued) BV, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE I = 0µA T, JUNCTION TEMPERATURE ( C) J Figure 7. Breakdown Voltage Variation with Temperature. I, REVERSE RAIN CURRENT (A) V GS = 0V T = 5 C J 5 C -55 C V S, BOY IOE FORWAR VOLTAGE (V) Figure 8. Body iode Forward Voltage Variation with Current and Temperature CAPACITANCE (pf) f = MHz V GS = 0V C iss C oss C rss V GS, GATE-SOURCE VOLTAGE (V) I =500mA V S = 5V V, RAIN TO SOURCE VOLTAGE (V) S Q g, GATE CHARGE (nc) Figure 9. Capacitance Characteristics. Figure 0. Gate Charge Characteristics. V t on t off t d(on) tr t d(off) t f V IN R L 90% 90% V GS R GEN G UT V OUT Output, Vout Input, Vin 0% 50% 0% 90% 50% Inverted S 0% Pulse Width Figure. Switching Test Circuit. Figure. Switching Waveforms. BS70.SAM

5 Typical Electrical Characteristics (continued) I, RAIN CURRENT (A) RS(ON) Limit V GS = 0V SINGLE PULSE T A = 5 C 00us ms 0ms 00ms s 0s C V S, RAIN-SOURCE VOLTAGE (V) Figure 3. Maximum Safe Operating Area. r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE = Single Pulse P(pk) R θja (t) = r(t) * R θja R = (See atasheet) θja t t T J - T = P * R (t) A θja uty Cycle, = t /t t, TIME (sec) Figure 4. Transient Thermal Response Curve. BS70.SAM

6 TO-9 Tape and Reel ata TO-9 Packaging Configuration: Figure.0 FSCINT sample FAIRCHIL SEMICONUCTOR CORPORATION HTB:B LOT: CBVK74B09 QTY: 0000 TAPE and REEL OPTION See Fig.0 for various Reeling Styles NSI: PNN SPEC: /C: 984 SPEC REV: B FSCINT QA REV: (FSCINT) F63TNR sample LOT: CBVK74B09 QTY: 000 FSI: PNN SPEC: /C: 984 QTY: SPEC REV: /C: QTY: CPN: N/F: F (F63TNR)3 5 Reels per Intermediate Box F63TNR Customized 375mm x 67mm x 375mm Intermediate Box Customized TO-9 TNR/AMMO PACKING INFROMATION Packing Style Quantity EOL code Reel A,000 6Z AMMO PACK OPTION See Fig 3.0 for Ammo Pack Options E,000 7Z Ammo M,000 74Z P,000 75Z Unit weight = 0. gm Reel weight with components =.04 kg Ammo weight with components =.0 kg Max quantity per intermediate box = 0,000 units 37mm x 58mm x 35mm Immediate Box Customized 5 Ammo boxes per Intermediate Box F63TNR 333mm x 3mm x 83mm Intermediate Box FSCINT Customized (TO-9) BULK PACKING INFORMATION EOL COE ESCRIPTION LEACLIP IMENSION QUANTITY J8Z TO-8 OPTION ST NO LEA CLIP.0 K / BOX J05Z TO-5 OPTION ST NO LEA CLIP.5 K / BOX NO EOL COE L34Z TO-9 STANAR STRAIGHT FOR: PKG 9, 94 (NON PROELECTRON SERIES), 96 TO-9 STANAR STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 NO LEACLIP NO LEACLIP.0 K / BOX.0 K / BOX BULK OPTION See Bulk Packing Information table FSCINT 000 units per EO70 box for std option Anti-static Bubble Sheets 4mm x 0mm x 5mm Immediate Box 5 EO70 boxes per intermediate Box 530mm x 30mm x 83mm Intermediate box Customized FSCINT 0,000 units maximum per intermediate box for std option 00 Fairchild Semiconductor Corporation March 00, Rev. B

7 TO-9 Tape and Reel ata, continued TO-9 Reeling Style Configuration: Figure.0 Machine Option A (H) Machine Option E (J) Style A, 6Z, 70Z (s/h) Style E, 7Z, 7Z (s/h) TO-9 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR AHESIVE TAPE IS ON THE TOP SIE FLAT OF TRANSISTOR IS ON TOP FIRST WIRE OFF IS EMITTER AHESIVE TAPE IS ON THE TOP SIE FLAT OF TRANSISTOR IS ON BOTTOM ORER STYLE 74Z (M) ORER STYLE 75Z (P) FIRST WIRE OFF IS EMITTER (ON PKG. 9) AHESIVE TAPE IS ON BOTTOM SIE FLAT OF TRANSISTOR IS ON BOTTOM FIRST WIRE OFF IS COLLECTOR (ON PKG. 9) AHESIVE TAPE IS ON BOTTOM SIE FLAT OF TRANSISTOR IS ON TOP September 999, Rev. B

8 TO-9 Tape and Reel ata, continued TO-9 Tape and Reel Taping imension Configuration: Figure 4.0 P Pd Hd b Ha H HO L d L S W WO W t W t P F P O ITEM ESCRIPTION SYMBOL IMENSION PO Base of Package to Lead Bend b (max) User irection of Feed Component Height Lead Clinch Height Ha HO 0.98 (+/- 0.05) (+/- 0.00) Component Base Height H (+/- 0.00) Component Alignment ( side/side ) Pd (max) Component Alignment ( front/back ) Hd 0.03 (max) Component Pitch P 00 (+/- 0.00) Feed Hole Pitch PO 00 (+/ ) Hole Center to First Lead P 0 (+0.009, -0.00) Hole Center to Component Center P 0.47 (+/ ) Lead Spread F/F 0.04 (+/- 0.00) Lead Thickness d 0.08 (+0.00, ) Cut Lead Length L 0.49 (max) Taped Lead Length L 0.09 (+0.05, -0.05) Taped Lead Thickness t 0.03 (+/ ) Carrier Tape Thickness t 0.0 (+/ ) TO-9 Reel Configuration: Figure 5.0 Carrier Tape Width Hold - down Tape Width Hold - down Tape position Feed Hole Position W WO W W (+0.00, -0.09) 0.36 (+/- 0.0) (max) (+/- 0.05) Sprocket Hole iameter O 7 (+0.008, ) Lead Spring Out S (max) Note : All dimensions are in inches. ELECTROSTATIC SENSITIVE EVICES 4 ITEM ESCRIPTION SYSMBOL MINIMUM MAXIMUM F63TNR Customized Reel iameter Arbor Hole iameter (Standard) (Small Hole) Core iameter Hub Recess Inner iameter Hub Recess epth W W W W3 Flange to Flange Inner Width W Hub to Hub Center Width W3.090 Note: All dimensions are inches 3 July 999, Rev. A

TO-9 Package imensions TO-9; TO-8 Reverse Lead Form (J35Z Option) (FS PKG Code 9, 94, 96) : Scale : on letter size paper imensions shown below are in: inches [millimeters] Part Weight per unit

9 TO-9 Package imensions TO-9; TO-8 Reverse Lead Form (J35Z Option) (FS PKG Code 9, 94, 96) : Scale : on letter size paper imensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0. * * ; Note: All package 97 or 98 transistors are leadformed to this configuration prior to bulk shipment. Order L34Z option if in-line leads are preferred on package 97 or 98. * Standard Option on 97 & 98 package code January 000, Rev. B

10 TRAEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT OME E CMOS TM EnSigna TM FACT FACT Quiet Series FAST ISCLAIMER LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PROUCT STATUS EFINITIONS efinition of Terms FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UHC VCX FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. atasheet Identification Product Status efinition Advance Information Preliminary No Identification Needed Formative or In esign First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G

BS270 N-Channel Enhancement Mode Field Effect Transistor

BS270 N-Channel Enhancement Mode Field Effect Transistor BS70 N-Channel Enhancement Mode Field Effect Transistor General escription These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,