BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor

Transcription

1 N April 995 BS7 / MMBF7 N-Channel Enhancement Mode Field Effect Transistor General escription Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, MOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 5mA C. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. High density cell design for low R S(ON). oltage controlled small signal switch. Rugged and reliable. High saturation current capability. G S Absolute Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter BS7 MMBF7 Units SS rain-source oltage 6 GR rain-gate oltage (R < MΩ) 6 S Gate-Source oltage ± I rain Current - Continuous 5 5 ma - Pulsed 8 P Maximum Power issipation 8 mw erate Above 5 C mw/ C T,T STG Operating and Storage Temperature Range -55 to 5 C T L Maximum Lead Temperature for Soldering Purposes, /6" from Case for Seconds THERMAL CHARACTERISTICS C R Thermal Resistacne, unction-to-ambient 5 47 C/W BS7 Rev. C / MMBF7 Rev.

2 Electrical Characteristics (T A = 5 C unless otherwise noted) Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS B SS rain-source Breakdown oltage =, I = µa All 6 I SS Zero Gate oltage rain Current S = 5, = All µa I SF Gate - Body Leakage, Forward = 5, S = All na ON CHARACTERISTICS (Note ) (th) Gate Threshold oltage S =, I = ma All.8. R S(ON) Static rain-source On-Resistance =, I = ma All. 5 Ω g FS Forward Transconductance S =, I = ma BS7 ms S > S(on), I = ma MMBF7 YNAMIC CHARACTERISTICS C iss Input Capacitance S =, =, All 4 4 pf C oss Output Capacitance f =. MHz All 7 pf C rss Reverse Transfer Capacitance All 7 pf SWITCHING CHARACTERISTICS (Note ) t on Turn-On Time = 5, I = m A, =, R GEN = 5 Ω = 5, I = 5 ma, =, R GEN = 5 Ω t off Turn-Off Time = 5, I = m A, =, R GEN = 5 Ω Note:. Pulse Test: Pulse Width < µs, uty Cycle <.%. = 5, I = 5 ma, =, R GEN = 5 Ω BS7 ns MMBF7 BS7 ns MMBF7 BS7 Rev. C / MMBF7 Rev.

3 Typical Electrical Characteristics BS7 / MMBF7 I, RAIN-SOURCE CURRENT (A) = S, RAIN-SOURCE OLTAGE () Figure. On-Region Characteristics. R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE.5.5 = I, RAIN CURRENT (A) Figure. On-Resistance ariation with Gate oltage and rain Current. 6. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE = I = 5mA R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE.5.5 = T = 5 C 5 C -55 C T, UNCTION TEMPERATURE ( C) Figure. On-Resistance ariation with Temperature I, RAIN CURRENT (A) Figure 4. On-Resistance ariation with rain Current and Temperature. I, RAIN CURRENT (A) = S T = -55 C 5 C 4 6 8, GATE TO SOURCE OLTAGE () Figure 5. Transfer Characteristics. 5 C th, NORMALIZE GATE-SOURCE THRESHOL OLTAGE S = I = ma T, UNCTION TEMPERATURE ( C) Figure 6. Gate Threshold ariation with Temperature. BS7 Rev. C / MMBF7 Rev.

4 S SS Typical Electrical Characteristics (continued) BS7 / MMBF7 B, NORMALIZE RAIN-SOURCE BREAKOWN OLTAGE I = µa T, UNCTION TEMPERATURE ( C) Figure 7. Breakdown oltage ariation with Temperature. I, REERSE RAIN CURRENT (A)...5 = T = 5 C 5 C -55 C S, BOY IOE FORWAR OLTAGE () Figure 8. Body iode Forward oltage ariation with Current and Temperature. 6 CAPACITANCE (pf) 4 5 f = MHz = C iss C oss C rss, GATE-SOURCE OLTAGE () I =5mA S = 5 5 5, RAIN TO SOURCE OLTAGE () S Q g, GATE CHARGE (nc) Figure 9. Capacitance Characteristics. Figure. Gate Charge Characteristics. t on t off t d(on) tr t d(off) t f IN R L 9% 9% R GEN G UT OUT Output, out Input, in % 5% % 9% 5% Inverted S % Pulse Width Figure. Switching Test Circuit. Figure. Switching Waveforms. BS7 Rev. C / MMBF7 Rev.

5 Typical Electrical Characteristics (continued) I, RAIN CURRENT (A).. RS(ON) Limit = SINGLE PULSE T A = 5 C ms ms ms s s C S, RAIN-SOURCE OLTAGE () Figure. BS7 Maximum Safe Operating Area. us I, RAIN CURRENT (A).. RS(ON) Limit = SINGLE PULSE T A = 5 C s s C S, RAIN-SOURCE OLTAGE () Figure 4. MMBF7 Maximum Safe Operating Area. ms ms ms us r(t), NORMALIZE EFFECTIE TRANSIENT THERMAL RESISTANCE... =.... Single Pulse P(pk) R (t) = r(t) * R R = (See atasheet) t t T - T = P * R (t) A uty Cycle, = t /t..... t, TIME (sec) Figure 5. TO-9, BS7 Transient Thermal Response Curve. r(t), NORMALIZE EFFECTIE TRANSIENT THERMAL RESISTANCE.... =.... Single Pulse R (t) = r(t) * R R = (See atasheet) T - T = P * R (t) A uty Cycle, = t /t..... t, TIME (sec) P(pk) t t Figure 6. SOT-, MMBF7 Transient Thermal Response Curve. BS7 Rev. C / MMBF7 Rev.