RU3030M2. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings

Transcription

1 N-Channel Advanced Power MOSFET Features 3V/3A, R S (ON) =mω(typ.)@v GS =V R S (ON) =5mΩ(Typ.)@V GS =4.5V Super High ense Cell esign Fast Switching Speed Low gate Charge % avalanche tested Lead Free and Green evices Available (RoHS Compliant) Pin escription S S S G PIN PIN Applications Switching Application Systems G PFN3333 Absolute Maximum Ratings S N-Channel MOSFET Symbol Parameter Rating Unit Common Ratings (T C =25 C Unless Otherwise Noted) V SS rain-source Voltage 3 V GSS Gate-Source Voltage ±2 V T J Maximum Junction Temperature 5 C T STG Storage Temperature Range -55 to 5 C I S iode Continuous Forward Current T C =25 C 3 A Mounted on Large Heat Sink I P 3μs Pulse rain Current Tested T C =25 C 2 A Continuous rain Current@T C (V GS =V) T C =25 C 3 T C = C 9 2 I A T A =25 C.8 Continuous rain Current@T A (V GS =V) 3 T A =7 C 8.7 T C =25 C 29 P Maximum Power issipation@t C Maximum Power issipation@t A 3 T C = C 2 T A =25 C 3.5 T A =7 C 2.3 W Rev. A APR., 23

2 Symbol Parameter Rating Unit R θjc Thermal Resistance-Junction to Case 4.2 C/W 3 R θja Thermal Resistance-Junction to Ambient 35 C/W rain-source Avalanche Ratings 4 E AS Avalanche Energy, Single Pulsed 42 mj Electrical Characteristics (T C =25 C Unless Otherwise Noted) RU33M2 Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BV SS rain-source Breakdown Voltage V GS =V, I S =25µA 3 V I SS V S =3V, V GS =V Zero Gate Voltage rain Current µa T J =25 C 3 V GS(th) Gate Threshold Voltage V S =V GS, I S =25µA V I GSS Gate Leakage Current V GS =±2V, V S =V ± na R 5 S(ON) rain-source On-state Resistance V GS =V, I S =2A 5 mω V GS =4.5V, I S =6A 5 25 mω iode Characteristics 5 V S iode Forward Voltage I S =2A, V GS =V.2 V trr Reverse Recovery Time IS=2A, dls/dt=a/µs 5 ns Qrr Reverse Recovery Charge 8 nc ynamic Characteristics 6 R G Gate Resistance V GS =V,V S =V,F=MHz Ω C iss Input Capacitance V GS =V, 67 C oss Output Capacitance V S =5V, Frequency=.MHz 8 pf C rss Reverse Transfer Capacitance 75 t d(on) Turn-on elay Time 5 t r Turn-on Rise Time V =5V, R L =.75Ω, I S =2A, V GEN =V, t d(off) Turn-off elay Time R G =3Ω 5 t f Turn-off Fall Time 4 ns Gate Charge Characteristics 6 Q g Total Gate Charge 2 Q gs Gate-Source Charge V S =24V, V GS =V, I S =2A 3 Q gd Gate-rain Charge 4 nc Rev. A APR.,

3 Notes: Pulse width limited by safe operating area. 2Calculated continuous current based on maximum allowable junction temperature. 3When mounted on inch square copper board, t sec. 4Limited by T Jmax, I AS =3A, V = 24V, R G = 5Ω, Starting T J = 25 C. 5Pulse test;pulse width 3µs, duty cycle 2%. 6Guaranteed by design, not subject to production testing. Ordering and Marking Information evice Marking Package Packaging Quantity Reel Size Tape width RU33M2 33 PFN3333 Tape&Reel 5 3'' 2mm Rev. A APR.,

4 Typical Characteristics 35 Power issipation 35 rain Current 3 3 P - Power (W) T J - Junction Temperature ( C) I - rain Current (A) VGS=V T J - Junction Temperature ( C) I - rain Current (A).. R S(ON) limited T C =25 C Safe Operation Area C.. V S - rain-source Voltage (V) µs µs ms ms R S(ON) - On - Resistance (mω) rain Current Ids=2A V GS - Gate-Source Voltage (V) Thermal Transient Impedance ZthJC - Thermal Response ( C/W) uty=.5,.2,.,.5,.2,., Single Pulse. Single Pulse R θjc =4.2 C/W. E Square Wave Pulse uration (sec) Rev. A APR.,

5 Typical Characteristics I - rain Current (A) 5 2 Output Characteristics 6V V 5V 9 6 3V 3 2V V S - rain-source Voltage (V) R S(ON) - On Resistance (mω) rain-source On Resistance 4.5V V I - rain Current (A) Normalized On Resistance V GS =V I =2A rain-source On Resistance T J - Junction Temperature ( C) I S - Source Current (A) T J =25 C Rds(on)=mΩ. Source-rain iode Forward T J =5 C T J =25 C V S - Source-rain Voltage (V) C - Capacitance (pf) Capacitance Frequency=.MHz Ciss Coss Crss V S - rain-source Voltage (V) V GS - Gate-Source Voltage (V) VS=24V IS=2A Gate Charge 5 5 Q G - Gate Charge (nc) Rev. A APR.,

6 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Rev. A APR.,

7 Package Information C PFN3333 b Land Pattern ( Only for Reference ) L M 3 2 L H A e E2 E E θ.6 SYMBOL MM INCH SYMBOL MIN NOM MAX MIN NOM MAX MIN NOM MAX MIN NOM MAX A E b E c e.65bsc.26bsc H L L *.3 * *.5 * 3 *.3 * *.5 * θ * 2 * 2 E M * *.5 * *.6 Rev. A APR., MM 2.8 INCH

8 Customer Service Worldwide Sales and Service: Technical Support: Investor Relations Contacts: Marcom Contact: Editorial Contact: HR Contact: Legal Contact: Shen Zhen RUICHIPS Semiconductor CO., LT Room 5, the 5floor An Tong Industrial Building, NO.27 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) FAX: (86-755) Rev. A APR.,