Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp.
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1 dvanced Power P-CHNNEL ENHNCEMENT MOE Electronics Corp. POWER MOSFET Simple rive Requirement BV SS -3V Small Package Outline R S(ON) 8mΩ Surface Mount evice I RoHS Compliant escription SOT-23 G S P235GN-HF Halogen-Free Product dvanced Power MOSFETs from PEC provide the designer with the best combination of fast switching, low on-resistance and costeffectiveness. The SOT-23 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as C/C converters. G S bsolute Maximum Ratings V S V GS =25 Continuous rain Current =7 Continuous rain Current I M Symbol Parameter Rating rain-source Voltage - 3 Gate-Source Voltage ± 2 Pulsed rain Current - =25 Total Power issipation.38 Linear erating Factor. T STG Storage Temperature Range -55 to 5 T J Operating Junction Temperature Range -55 to 5 Units V V W W/ Thermal ata Symbol Parameter Value Unit Rthj-amb Maximum Thermal Resistance, Junction-ambient 3 9 /W ata and specifications subject to change without notice 28522
2 P235GN-HF Electrical j =25 o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BV SS rain-source Breakdown Voltage V GS =V, I =-25u V ΔBV SS /ΔT j Breakdown Voltage Temperature Coefficient Reference to 25, I =-m V/ R S(ON) Static rain-source On-Resistance 2 V GS =-V, I = mω V GS =-.5V, I = mω V GS =-2.5V, I = mω V GS(th) Gate Threshold Voltage V S =V GS, I =-25u V g fs Forward Transconductance V S =-5V, I = S I SS rain-source Leakage Current V S =-3V, V GS =V u rain-source Leakage Current (T j =7 o C) V S =-2V, V GS =V u I GSS Gate-Source Leakage V GS = ± 2V - - ± n Q g Total Gate Charge 2 I = nc Q gs Gate-Source Charge V S =-2V nc Q gd Gate-rain ("Miller") Charge V GS =-.5V nc t d(on) Turn-on elay Time 2 V S =-5V ns t r Rise Time I = ns t d(off) Turn-off elay Time R G =3.3Ω,V GS =-V ns t f Fall Time R =.6Ω ns C iss Input Capacitance V GS =V pf C oss Output Capacitance V S =-25V - - pf C rss Reverse Transfer Capacitance f=.mhz pf Source-rain iode Symbol Parameter Test Conditions Min. Typ. Max. Units V S Forward On Voltage 2 I S =-.2, V GS =V V trr Reverse Recovery Time 2 I S =-3.2, V GS =V, ns Qrr Reverse Recovery Charge di/dt=/µs nc Notes:.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on in 2 copper pad of FR board ; 27 /W when mounted on min. copper pad. THIS PROUCT IS SENSITIVE TO ELECTROSTTIC ISCHRGE, PLESE HNLE WITH CUTION. USE OF THIS PROUCT S CRITICL COMPONENT IN LIFE SUPPORT OR OTHER SIMILR SYSTEMS IS NOT UTHORIZE. PEC OES NOT SSUME NY LIBILITY RISING OUT OF THE PPLICTION OR USE OF NY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY NY LICENSE UNER ITS PTENT RIGHTS, NOR THE RIGHTS OF OTHERS. PEC RESERVES THE RIGHT TO MKE CHNGES WITHOUT FURTHER NOTICE TO NY PROUCTS HEREIN TO IMPROVE RELIBILITY, FUNCTION OR ESIGN. 2
3 P235GN-HF 36 -I, rain Current () 3 2 T =25 o C -5.V -.V -3.V -I, rain Current () T =5 o C 65mΩ -5.V -.V -3.V V G = -2.V 8 V G = -2.V Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 3.8 I = -. T =25 o C.6 I = -3. V GS = -.5V R S(ON) (mω) 2 Normalized R S(ON) V GS, Gate-to-Source Voltage (V) T j, Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig. Normalized On-Resistance v.s. Junction Temperature.5 -I S () T j =5 o C T j =25 o C -V GS(th) (V) V S, Source-to-rain Voltage (V) T j, Junction Temperature ( o C) Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse iode Junction Temperature 3
4 P235GN-HF 2 f=.mhz I = -3.2 V S = -2V Ciss -V GS, Gate to Source Voltage (V) C (pf) 65mΩ Coss Crss Q G, Total Gate Charge (nc) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics UTY=.5 -I ().. T =25 o C Single Pulse ms ms ms s C Normalized Thermal Response (R thja ) Single pulse P M t T uty factor = t/t Peak T j = P M x R thja + T a Rthja = 27 /W..... t, Pulse Width (s) Fig 9. Maximum Safe Operating rea Fig. Effective Transient Thermal Impedance V S 9% V G Q G -.5V Q GS Q G % V GS t d(on) t r t d(off) t f Charge Q Fig. Switching Time Waveform Fig 2. Gate Charge Waveform
5 Package Outline : SOT-23 VNCE POWER ELECTRONICS CORP. e E E SYMBOLS Millimeters MIN NOM MX e E E ll imension re In Millimeters. 2.imension oes Not Include Mold Protrusions. Part Marking Information & Packing : SOT-23 N7YY Part Number : N7 ate Code : YY YY:2,28,22 YY:23,27,2 YY:22,26,2 YY:2,25,29 5
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N-CHNNEL ENHNCEMENT MOE MOSFET Product Summary Features and Benefits VNCE INFORMTION V (BR)SS 2V R S(ON) Max I Max T = +25 C 25mΩ @ V = 4.5V 6.8 29mΩ @ V = 2.5V 5.5 escription and pplications This MOSFET
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l Generation V Technology l Ultra Low On-Resistance l ual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching l Lead-Free escription Fifth Generation HEXFETs
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查询 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 P- 94243 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S S S 2 3 8 7 6 A V SS = -30V G 4 5 R S(on) = 0.020Ω
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