AP0803GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.

Transcription

1 P83GMT-HF Halogen-Free Product dvanced Power N-CHNNEL ENHNCEMENT MOE Electronics Corp. POWER MOFET imple rive Requirement BV 3V O-8 Compatible R (ON) 8.5mΩ Low On-resistance I 5 G RoH Compliant escription dvanced Power MOFETs from PEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PMPK 5x6 package is special for C-C converters application and the foot print is compatible with O-8 with backside heat sink. G PMPK 5x6 bsolute Maximum Ratings V V G ymbol Parameter Rating Units C =25 =25 =7 I M C =25 =25 rain-ource Voltage 3 V Gate-ource Voltage +2 V Continuous rain Current 5 Continuous rain Current 3 9 Continuous rain Current 3 5 Pulsed rain Current 6 Total Power issipation 29.7 W Total Power issipation 5 W E ingle Pulse valanche Energy 6.2 mj T TG torage Temperature Range -55 to 5 T J Operating Junction Temperature Range -55 to 5 Thermal ata ymbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case.2 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 25 /W ata & specifications subject to change without notice

2 P83GMT-HF Electrical j =25 o C(unless otherwise specified) ymbol Parameter Test Conditions Min. Typ. Max. Units BV rain-ource Breakdown Voltage V G =V, I =25u V R (ON) tatic rain-ource On-Resistance 2 V G =V, I = mω V G =.5V, I = mω V G(th) Gate Threshold Voltage V =V G, I =25u - 3 V g fs Forward Transconductance V =V, I =2-2 - I rain-ource Leakage Current V =3V, V G =V - - u I G Gate-ource Leakage V G =+2V n Q g Total Gate Charge 2 I = nc Q gs Gate-ource Charge V =5V nc Q gd Gate-rain ("Miller") Charge V G =.5V nc t d(on) Turn-on elay Time 2 V =5V ns t r Rise Time I =3-8 - ns t d(off) Turn-off elay Time R G =3.3Ω,V G =V ns t f Fall Time R =.5Ω - - ns C iss Input Capacitance V G =V pf C oss Output Capacitance V =25V pf C rss Reverse Transfer Capacitance f=.mhz pf R g Gate Resistance f=.mhz Ω ource-rain iode ymbol Parameter Test Conditions Min. Typ. Max. Units V Forward On Voltage 2 I =2, V G =V V t rr Reverse Recovery Time 2 I =, V G =V, ns Q rr Reverse Recovery Charge di/dt=/µs nc Notes:.Pulse width limited by Max. junction temperature 2.Pulse test 3.urface mounted on in 2 copper pad of FR board, t <sec, 6 o C/W at steady state..tarting T j =25 o C, V =25V, L=.mH, R G =25Ω, I =8. THI PROUCT I ENITIVE TO ELECTROTTIC ICHRGE, PLEE HNLE WITH CUTION. UE OF THI PROUCT CRITICL COMPONENT IN LIFE UPPORT OR OTHER IMILR YTEM I NOT UTHORIZE. PEC OE NOT UME NY LIBILITY RIING OUT OF THE PPLICTION OR UE OF NY PROUCT OR CIRCUIT ECRIBE HEREIN; NEITHER OE IT CONVEY NY LICENE UNER IT PTENT RIGHT, NOR THE RIGHT OF OTHER. PEC REERVE THE RIGHT TO MKE CHNGE WITHOUT FURTHER NOTICE TO NY PROUCT HEREIN TO IMPROVE RELIBILITY, FUNCTION OR EIGN. 2

3 P83GMT-HF I, rain Current () V 7.V 6.V 5.V V G =. V I, rain Current () 8 6 T C =5 o C V 7.V 6.V 5.V V G =.V V, rain-to-ource Voltage (V) V, rain-to-ource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I =2 I =3 V G =V R (ON) (mω) 28 2 Normalized R (ON) V G, Gate-to-ource Voltage (V) T j, Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig. Normalized On-Resistance v.s. Junction Temperature 3.6 T j =5 o C T j =25 o C I () 2 Normalized V G(th) (V) V, ource-to-rain Voltage (V) T j, Junction Temperature ( o C) Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse iode Junction Temperature 3

4 P83GMT-HF 2 I =3 6 f=.mhz V G, Gate to ource Voltage (V) V =5V V =8V V =2V C (pf) C iss C oss C rss Q G, Total Gate Charge (nc) V,rain-to-ource Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics uty factor =.5 I () ingle Pulse us ms ms ms C Normalized Thermal Response (R thjc ) ingle Pulse P M t T uty factor = t/t Peak T j = PM x R thjc + T c. V,rain-to-ource Voltage (V) t, Pulse Width (s) Fig 9. Maximum afe Operating rea Fig. Effective Transient Thermal Impedance V 9% V G Q G.5V % V G Q G Q G t d(on) t r t d(off) t f Charge Q Fig. witching Time Waveform Fig 2. Gate Charge Waveform

5 Package Outline : PMPK 5x6 VNCE POWER ELECTRONIC CORP. Millimeters YMBOL MIN NOM MX.9.. b C E E (Reference) E2 (Reference) e H -.27 BC -.62 K (Reference) L L α(reference) - 2.ll imension re In Millimeters. 2.imension oes Not Include Mold Protrusions. Part Marking Information & Packing : PMPK 5x6 83GMT YWW Part Number(83) Package Code(GMT) ate Code (YWW) Y:Last igit Of The Year WW:Week :equence If last "" is numerical letter : Rohs product If last "" is English letter : HF & Rohs product 5