Advanced Power Electronics Corp.
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1 dvanced Power Electronics Corp P6SLI Halogen-Free Product N-CHNNEL ENHNCEMENT MODE POWER MOSFET Fast Switching Characteristic V T j,max 65V Simple Drive Requirement R DS(ON) Ω RoHS Compliant & Halogen-Free G 3, I D 35 D Description P6SL series are from dvanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance It provides the designer with an extreme efficient device for use in a wide range of power applications The TO-CFM package is widely preferred for all commercialindustrial through hole applications The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink S G D S TO-CFM(I) bsolute Maximum Ratings@T j =5 o C(unless otherwise specified) Symbol Parameter Rating Units V DS Drain-Source Voltage 6 V V GS Gate-Source Voltage + V I C =5 Drain Current, V V 3, 35 I C = Drain Current, V V 3, 5 I DM Pulsed Drain Current 39 dv/dt MOSFET dv/dt Ruggedness (V DS = V ) 5 V/ns P C =5 Total Power Dissipation 3 W P =5 Total Power Dissipation 9 W E S Single Pulse valanche Energy 5 7 mj dv/dt Peak Diode Recovery dv/dt 6 5 V/ns T STG Storage Temperature Range -55 to 5 T J Operating Junction Temperature Range -55 to 5 Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 39 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 /W Data & specifications subject to change without notice 55
2 P6SLI Electrical j =5 o C(unless otherwise specified) Symbol Parameter Test Conditions Min Typ Max Units BV DSS Drain-Source Breakdown Voltage V GS =V, I D =5u V R DS(ON) Static Drain-Source On-Resistance V GS =V, I D =5 - - Ω V GS(th) Gate Threshold Voltage V DS =V GS, I D =5u - 5 V g fs Forward Transconductance V DS =V, I D =5 - - S I DSS Drain-Source Leakage Current V DS =V, V GS =V - - u I GSS Gate-Source Leakage V GS =+V, V DS =V n Q g Total Gate Charge I D = nc Q gs Gate-Source Charge V DS =V nc Q gd Gate-Drain ("Miller") Charge V GS =V nc t d(on) Turn-on Delay Time V DD =3V - - ns t r Rise Time I D =5 - - ns t d(off) Turn-off Delay Time R G =33Ω ns t f Fall Time V GS =V ns C iss Input Capacitance V GS =V - 3 pf C oss Output Capacitance V DS =V pf C rss Reverse Transfer Capacitance f=mhz pf R g Gate Resistance f=mhz Ω Source-Drain Diode Symbol Parameter Test Conditions Min Typ Max Units V SD Forward On Voltage I S =5, V GS =V - - V t rr Reverse Recovery Time I S =3, V GS =V ns Q rr Reverse Recovery Charge di/dt=5/µs µc Notes: Pulse width limited by max junction temperature Pulse test 3Limited by max junction temperature Maximum duty cycle D=75 Ensure that the junction temperature does not exceed T Jmax 5Starting T j =5 o C, V DD =5V, L=5mH, R G =5Ω 6I SD I D, V DD BV DSS, starting T J = 5 o C THIS PRODUCT IS SENSITIVE TO ELECTROSTTIC DISCHRGE, PLESE HNDLE WITH CUTION USE OF THIS PRODUCT S CRITICL COMPONENT IN LIFE SUPPORT OR OTHER SIMILR SYSTEMS IS NOT UTHORIZED PEC DOES NOT SSUME NY LIBILITY RISING OUT OF THE PPLICTION OR USE OF NY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY NY LICENSE UNDER ITS PTENT RIGHTS, NOR THE RIGHTS OF OTHERS PEC RESERVES THE RIGHT TO MKE CHNGES WITHOUT FURTHER NOTICE TO NY PRODUCTS HEREIN TO IMPROVE RELIBILITY, FUNCTION OR DESIGN
3 P6SLI 3 I D, Drain Current () 6 T C =5 o C V 9V V 7V I D, Drain Current () 6 T C =5 o C 37Ω V 9V V 7V V G =6V V G =6V 3 3 Fig Typical Output Characteristics Fig Typical Output Characteristics 36 I D =5 T C =5 o C I D =5 V G =V R DS(ON) (mω) 3 Normalized R DS(ON) V GS Gate-to-Source Voltage (V) T j, Junction Temperature ( o C ) Fig 3 On-Resistance vs Gate Voltage Fig Normalized On-Resistance vs Junction Temperature I D =5u 5 I S () 6 T j = 5 o C T j = 5 o C Normalized V GS(th) 5 6 V SD (V) T j, Junction Temperature ( o C ) Fig 5 Forward Characteristic of Fig 6 Gate Threshold Voltage vs Reverse Diode Junction Temperature 3
4 P6SLI V GS, Gate to Source Voltage (V) 6 I D =5 V DS =V C (pf) 37Ω f=mhz C iss C oss C rss 3 5 Q G, Total Gate Charge (nc) 6 Fig 7 Gate Charge Characteristics Fig Typical Capacitance Characteristics I D () Operation in this area limited by R DS(ON) T C =5 o C Single Pulse us us ms ms ms s DC Normalized Thermal Response (R thjc ) Duty factor=5 5 Single Pulse P DM t T Duty factor = t/t Peak T j = P DM x R thjc + T C t, Pulse Width (s) Fig 9 Maximum Safe Operating rea Fig Effective Transient Thermal Impedance I D =m P D, Power Dissipation (W) 3 Normalized BV DSS T C, Case Temperature ( o C ) T j, Junction Temperature ( o C) Fig Total Power Dissipation Fig Normalized BV DSS vs Junction Temperature
5 MRKING INFORMTION P6SLI Part Number 6SL YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5
Advanced Power Electronics Corp.
dvanced Power Electronics Corp P76I--HF Halogen-Free Product N-CHNNEL ENHNCEMENT MODE POWER MOSFET % valanche Test D BV DSS 65V Fast Switching Characteristic R DS(ON) Ω Simple Drive Requirement I D G RoHS
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N-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET Features High ruggedness Low R DS(ON) (Typ 0.23Ω)@V GS =10V Low Gate Charge (Typ 42nC) Improved dv/dt Capability 100% Avalanche Tested Application:
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UNISONIC TECHNOLOGIES CO., LTD 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC uses UTC s advanced proprietary, planar stripe, DMOS technology to provide excellent R DS(ON), low gate charge and operation
More informationCharacteristic Value Units Drain-to-Source Voltage. 5.6 Continuous Drain Current (T C =100 )
dvanced Power MOSFET IRF510 FETURES n valanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating rea n 175 C Operating Temperature
More informationProduct Summary. BV DSS typ. 84 V R DS(ON) max. 8.0 mω I D 80 A
SIAI N-Channel Enhancement Mode Power MOSFET General Description The S75NF75 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use
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General Description The MDHT7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDHT7N25 is suitable device for SMPS,
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UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET 6.0A, 800V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 6NM80 is a Super Junction MOSFET Structure and is designed to have better characteristics,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 16A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 16N50 is a N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
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MDHTN0Y N-Channel MOSFET 00V, 0.85A,.35Ω General Description The MDHTN0Y uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
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UNISONIC TECHNOLOGIES CO., LTD 171A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement mode power MOSFET using UTC s advanced technology to
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More informationTO Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 088R06VT SW088R06VT TO-220 TUBE. Symbol Parameter Value Unit
Features High ruggedness Low R DS(ON) (Typ 10mΩ)@V GS =4.5V Low R DS(ON) (Typ 8.2mΩ)@V GS =10V Low Gate Charge (Typ 48nC) Improved dv/dt Capability 100% Avalanche Tested Application: Electronic Ballast,
More informationG S. Drain-Source Voltage -40 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W T STG
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -V Surface Mount evice R S(ON) 9mΩ G RoHS-compliant, halogen-free I -3.A S SS escription Advanced Power MOSFETs from
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More informationFeatures. Information I-PAK G D S. Marking. Part Number. Package. I-PAK (Short Lead) SMK0160. Unit. V Gate-source voltage T c =25 C I D I DM
Features SWITCHING REGULATO OR APPLICATION Drain-Source breakdown voltage: BV DSS =600V (Min.) Low gate charge: Q g = 3.9nC (Typ.) Low drain-source On resistance: R DS(on) =11.5Ω (Max.) 100% avalanche
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