Advanced Power Electronics Corp.

Transcription

1 dvanced Power Electronics Corp P4T3GH/J-HF Halogen-Free Product N-CHNNEL ENHNCEMENT MODE POWER MOFET imple Drive Requirement D BV D 3V Low Gate Charge R D(ON) 25mΩ Fast witching Characteristic I D 28 G RoH Compliant & Halogen-Free Description P4T3 series are from dvanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance It provides the designer with an extreme efficient device for use in a wide range of power applications The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance The through-hole version (P4T3GJ) are available for low-profile applications bsolute Maximum Ratings@T j =25 o C(unless otherwise specified) ymbol Parameter Rating Units V D Drain-ource Voltage 3 V V G Gate-ource Voltage +25 V I C =25 Drain Current, V V 28 I C = Drain Current, V V 8 I DM Pulsed Drain Current 95 P C =25 Total Power Dissipation 325 W T TG torage Temperature Range -55 to 5 T J Operating Junction Temperature Range -55 to 5 G D G D TO-252(H) TO-25(J) Thermal Data ymbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 4 /W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) /W Rthj-a Maximum Thermal Resistance, Junction-ambient /W Data and specifications subject to change without notice 2497

2 Electrical j =25 o C(unless otherwise specified) ymbol Parameter Test Conditions Min Typ Max Units BV D Drain-ource Breakdown Voltage V G =V, I D =25u V R D(ON) tatic Drain-ource On-Resistance 2 V G =V, I D = mω V G =45V, I D = mω V G(th) Gate Threshold Voltage V D =V G, I D =25u - 3 V g fs Forward Transconductance V D =V, I D =8-2 - I D Drain-ource Leakage Current V D =24V, V G =V - - u I G Gate-ource Leakage V G = +25V, V D =V n Q g Total Gate Charge I D =8-9 - nc Q gs Gate-ource Charge V D =2V nc Q gd Gate-Drain ("Miller") Charge V G =45V nc t d(on) Turn-on Delay Time V D =5V ns t r Rise Time I D = ns t d(off) Turn-off Delay Time R G =33Ω ns t f Fall Time V G =V ns C iss Input Capacitance V G =V pf C oss Output Capacitance V D =25V pf C rss Reverse Transfer Capacitance f=mhz pf ource-drain Diode ymbol Parameter Test Conditions Min Typ Max Units I Continuous ource Current ( Body Diode ) V D =V G =V, V =3V I M Pulsed ource Current ( Body Diode ) V D Forward On Voltage 2 T j =25, I =28, V G =V V Notes: Pulse width limited by Max junction temperature 2Pulse test 3urface mounted on in 2 copper pad of FR4 board THI PRODUCT I ENITIVE TO ELECTROTTIC DICHRGE, PLEE HNDLE WITH CUTION UE OF THI PRODUCT CRITICL COMPONENT IN LIFE UPPORT OR OTHER IMILR YTEM I NOT UTHORIZED PEC DOE NOT UME NY LIBILITY RIING OUT OF THE PPLICTION OR UE OF NY PRODUCT OR CIRCUIT DECRIBED HEREIN; NEITHER DOE IT CONVEY NY LICENE UNDER IT PTENT RIGHT, NOR THE RIGHT OF OTHER PEC REERVE THE RIGHT TO MKE CHNGE WITHOUT FURTHER NOTICE TO NY PRODUCT HEREIN TO IMPROVE RELIBILITY, FUNCTION OR DEIGN 2

3 9 75 T C =25 o C V 8 V T C =5 o C V 8 V I D, Drain Current () V V G =4V I D, Drain Current () V V G =4V V D, Drain-to-ource Voltage (V) V D, Drain-to-ource Voltage (V) Fig Typical Output Characteristics Fig 2 Typical Output Characteristics 7 2 I D =4 T C =25 I D =8 V G =V R D(ON) (mω) 5 3 Normalized R D(ON) V G, Gate-to-ource Voltage (V) T j, Junction Temperature ( o C) Fig 3 On-Resistance vs Gate Voltage Fig 4 Normalized On-Resistance vs Junction Temperature 25 2 T j =5 o C T j =25 o C I () V G(th) (V) V D, ource-to-drain Voltage (V) T j, Junction Temperature ( o C ) Fig 5 Forward Characteristic of Fig 6 Gate Threshold Voltage vs Reverse Diode Junction Temperature 3

4 f=mhz I D =8 C iss V G, Gate to ource Voltage (V) V D =V V D =5V V D =2V C (pf) C oss C rss Q G, Total Gate Charge (nc) V D,Drain-to-ource Voltage (V) Fig 7 Gate Charge Characteristics Fig 8 Typical Capacitance Characteristics Operation in this area limited by Duty factor = 5 I D () R D(ON) T C =25 o C ingle Pulse V D,Drain-to-ource Voltage (V) us ms Normalized Thermal Response (R thjc ) ms ms DC Fig 9 Maximum afe Operating rea Fig Effective Transient Thermal Impedance ingle Pulse P DM t, Pulse Width (s) t T Duty Factor = t/t Peak T j = P DM x R thjc + T C V D 9% V G 45V Q G Q G Q GD % V G t d(on) t r t d(off)t f Charge Q Fig witching Time Waveform Fig 2 Gate Charge Waveform 4

5 MRKING INFORMTION TO-25 P4T3GH/J-HF 4T3GJ YWW Part Number meet Rohs requirement for low voltage MOFET only Package Code Date Code (YWW) Y:Last Digit Of The Year WW:Week :equence TO-252 4T3GH YWW Part Number meet Rohs requirement for low voltage MOFET only Package Code Date Code (YWW) Y:Last Digit Of The Year WW:Week :equence 5