S S. Drain-Source Voltage -30 V Gate-Source Voltage + 25 V. at T = 70 C Continuous Drain Current 3

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1 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -3V Fast Switching Performance R S(ON) mω G RoHS-compliant, Halogen-free I -9. S SS escription dvanced Power MOSFETs from PEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The is in the SO- package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as C/C converters. SO- S S G S bsolute Maximum Ratings V S V GS I I I M P at T =5 C Total Power issipation.5 W Linear erating Factor. W/ C T STG T J Symbol Parameter Rating Units rain-source Voltage -3 V Gate-Source Voltage + 5 V at T =5 C Continuous rain Current 3-9. at T = 7 C Continuous rain Current Thermal ata Pulsed rain Current 1-5 Storage Temperature Range -55 to 15 C Operating Junction Temperature Range -55 to 15 C Symbol Parameter Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 5 C/W Ordering Information TR RoHS-compliant halogen-free SO-, shipped on tape and reel (3 pcs/reel) dvanced Power US /5

2 Electrical Specifications at T j =5 C (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BV SS rain-source Breakdown Voltage V GS =V, I =-5u V R S(ON) Static rain-source On-Resistance V GS =-V, I = mω V GS =, I = mω V GS(th) Gate Threshold Voltage V S =V GS, I =-5u V g fs Forward Transconductance V S =-V, I = S I SS rain-source Leakage Current V S =-3V, V GS =V u rain-source Leakage Current (T j =7 o C) V S =-4V, V GS =V u I GSS Gate-Source Leakage V GS =±5V - - ± n Q g Total Gate Charge I = nc Q gs Gate-Source Charge V S =-15V -. - nc Q gd Gate-rain ("Miller") Charge V GS = - - nc t d(on) Turn-on elay Time V S =-15V - - ns t r Rise Time I = ns t d(off) Turn-off elay Time R G =3.3Ω, V GS =-V ns t f Fall Time R =15 Ω ns C iss Input Capacitance V GS =V pf C oss Output Capacitance V S =-5V pf C rss Reverse Transfer Capacitance f=1.mhz pf Source-rain iode Symbol Parameter Test Conditions Min. Typ. Max. Units V S Forward On Voltage I S =-.1, V GS =V V t rr Reverse Recovery Time I S =-7, V GS =V, - - ns Q rr Reverse Recovery Charge di/dt=/µs nc Notes: 1.Pulse width limited by maximum junction temperature..pulse test - pulse width < 3µs, duty cycle < % 3.Surface mounted on 1 in copper pad of FR4 board; 15 C/W on minimum copper pad. THIS PROUCT IS SENSITIVE TO ELECTROSTTIC ISCHRGE, PLESE HNLE WITH CUTION. USE OF THIS PROUCT S CRITICL COMPONENT IN LIFE SUPPORT OR OTHER SIMILR SYSTEMS IS NOT UTHORIZE. PEC OES NOT SSUME NY LIBILITY RISING OUT OF THE PPLICTION OR USE OF NY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY NY LICENSE UNER ITS PTENT RIGHTS, NOR THE RIGHTS OF OTHERS. PEC RESERVES THE RIGHT TO MKE CHNGES WITHOUT FURTHER NOTICE TO NY PROUCTS HEREIN TO IMPROVE RELIBILITY, FUNCTION OR ESIGN. dvanced Power US /5

3 Typical Electrical Characteristics -I, rain Current () T =5 o C -V -7.V -5.V V G =-3.V -I, rain Current () T =15 o C -V -7.V -5.V V G =-3.V V S, rain-to-source Voltage (V) 4 6 -V S, rain-to-source Voltage (V) Fig 1. Typical Output Characteristics Fig. Typical Output Characteristics I =-6 T =5 o C I =-9 V G =-V 6 R S(ON) (mω) 1 Normalized R S(ON) V GS, Gate-to-Source Voltage (V) T j, Junction Temperature ( o C) Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature I S () 6 4 T j =15 o C T j =5 o C Normalized -V GS(th) (V) V S, Source-to-rain Voltage (V) T j, Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse iode Fig 6. Gate Threshold Voltage vs. Junction Temperature dvanced Power US 3/5

4 Typical Electrical Characteristics (cont.) -V GS, Gate to Source Voltage (V) I = -7 V S = -15V C (pf) f=1.mhz C iss C oss C rss 3 4 Q G, Total Gate Charge (nc) V S, rain-to-source Voltage (V) Fig 7. Gate Charge Characteristics Fig. Typical Capacitance Characteristics. 1 -I (). 1.. T =5 o C Single Pulse us 1ms ms ms 1s C Normalized Thermal Response (R thja ).1 uty factor= Single Pulse P M t T uty factor = t/t Peak T j = P M x R thja + T a R thja = 15 C/W V S, rain-to-source Voltage (V) t, Pulse Width (s) Fig 9. Maximum Safe Operating rea Fig. Effective Transient Thermal Impedance 4 V S =-5V V G -I, rain Current () 3 T j =5 o C T j =15 o C Q GS Q G Q G V GS, Gate-to-Source Voltage (V) Charge Q Fig 11. Transfer Characteristics Fig 1. Gate Charge Circuit dvanced Power US 4/5

5 Package imensions: SO- Millimeters SYMBOLS MIN NOM MX 1 e B E1 E B C E E L θ 4.. e 1.7 TYP 1 ETIL L θ c 1. ll dimensions are in millimeters.. imensions do not include mold protrusions. Marking Information: SO- ETIL 435GM YWWSSS Product: P435 Package: GM = RoHS-compliant halogen-free SO- ate/lot code (YWWSSS) Y: Last digit of the year WW: Work week SSS: Lot code sequence dvanced Power US 5/5