APT37F50B APT37F50S. N-Channel FREDFET TYPICAL APPLICATIONS FEATURES. 500V, 37A, 0.15Ω Max, trr, 250ns. Absolute Maximum Ratings
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1 PT37F5B PT37F5 5, 37,.15Ω Max, trr, 25ns N-Channel FREDFET Power MO 8 is a high speed, high voltage N-channel switch-mode power MOFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in Z phase shifted bridge and other circuits through reduced t rr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of C rss /C iss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. TO-247 D 3 PK PT37F5B PT37F5 ingle die FREDFET G D FETURE Fast switching with low EMI Low t rr for high reliability Ultra low C rss for improved noise immunity Low gate charge valanche energy rated RoH compliant TYPICL PPLICTION Z phase shifted and other full bridge Half bridge PFC and other boost converter Buck converter ingle and two switch forward Flyback bsolute Maximum Ratings ymbol Parameter Ratings Continuous Drain T C Continuous Drain T C = 1 C M Pulsed Drain Current Gate-ource oltage ±3 E ingle Pulse valanche Energy 2 78 mj I R valanche Current, Repetitive or Non-Repetitive 18 Thermal and Mechanical Characteristics ymbol Characteristic Min Typ Max P D Total Power T C 52 W R θjc R θc Junction to Case Thermal Resistance Case to ink Thermal Resistance, Flat, Greased urface C/W,T TG T L Operating and torage Junction Temperature Range oldering Temperature for 1 econds (1.6mm from case) C W T Torque Package Weight Mounting Torque ( TO-247 Package), 6-32 or M3 screw Microsemi Website oz g in lbf N m Rev D 8-211
2 tatic Characteristics unless otherwise specified PT37F5B_ ymbol BR(D) BR(D) / R D(on) (th) (th) / I G Parameter Drain-ource Breakdown oltage Breakdown oltage Temperature Coeffi cient Drain-ource On Resistance 3 Test Conditions =, = 25μ Reference to 25 C, = 25μ = 1, Min 5 Typ.6.13 Max.15 / C Ω Gate-ource Threshold oltage =, = 1m Threshold oltage Temperature Coeffi cient -1 m/ C Zero Gate oltage Drain Current = 6 25 = 1 μ Gate-ource Leakage Current = ±3 ±1 n Dynamic Characteristics ymbol Parameter g fs Forward Transconductance C iss Input Capacitance C rss Reverse Transfer Capacitance Output Capacitance C oss C o(cr) 4 C o(er) 5 Effective Output Capacitance, Charge Related Effective Output Capacitance, Energy Related unless otherwise specified Test Conditions Min Typ Max = 5, =, = f = 1MHz 615 =, = to pf Q g Q gs Q gd t d(on) t r t d(off) t f Total Gate Charge Gate-ource Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time = to 1,, = 25 Resistive witching DD = 333, R G = 4.7Ω 6, GG = nc ns ource-drain Diode Characteristics ymbol Parameter Test Conditions Min Typ Max I I M D t rr Q rr I rrm dv/dt Continuous ource Current (Body Diode) Pulsed ource Current (Body Diode) 1 Diode Forward oltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt MOFET symbol showing the integral reverse p-n junction diode (body diode),, = 3 di D /dt = 1/μs DD = 1 18, di/dt 1/μs, DD = 333, G D ns μc /ns Rev D Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 tarting at, L = 4.81mH, R G = 25Ω, I. 3 Pulse test: Pulse Width < 38μs, duty cycle < 2%. 4 C o(cr) is defi ned as a fi xed capacitance with the same stored charge as C O with = 67% of (BR)D. 5 C o(er) is defined as a fixed capacitance with the same stored energy as C O with = 67% of (BR)D. To calculate C o(er) for any value of less than (BR)D, use this equation: C o(er) = -1.33E-7/^ E-8/ E R G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein.
3 , GTE-TO-OURCE OLTGE () g fs, TRNCONDUCTNCE R D(ON), DRIN-TO-OURCE ON REITNCE = 1 = 12 = 3 = -55 C = 48 = -55 C = 15 C, REERE DRIN CURRENT () C, CPCITNCE (pf), DRIN CURRENT () > (ON) x R D(ON) MX. 25μEC. PULE <.5 % DUTY CYCLE = 15 C = 7 &, (ON) Figure 1, Output Characteristics Figure 2, Output Characteristics 2.5 NORMLIZED TO = = -55 C , JUNCTION TEMPERTURE ( C), GTE-TO-OURCE OLTGE () Figure 3, R D(ON) vs Junction Temperature Figure 4, Transfer Characteristics Figure 5, Gain vs Drain Current Figure 6, Capacitance vs Drain-to-ource oltage Q g, TOTL GTE CHRGE (nc) D, OURCE-TO-DRIN OLTGE () Figure 7, Gate Charge vs Gate-to-ource oltage Figure 8, Reverse Drain Current vs ource-to-drain oltage , C iss C oss C rss PT37F5B_ Rev D 8-211
4 PT37F5B_ M M R ds(on) μs 13μs 1μs 1ms 1 R 1μs 1ms ds(on) 1ms = 15 C 1 1ms 1ms T C DC line caling for Different Case & Junction T 1ms Temperatures: J T DC line = (TC ) *( - T C )/125 C = 75 C Figure 9, Forward afe Operating rea Figure 1, Maximum Forward afe Operating rea.25 D =.9 Z θjc, THERML IMPEDNCE ( C/W) INGLE PULE Note: P DM t 1 t 2 t 1 = Pulse Duration Duty Factor D = t1 /t 2 Peak = P DM x Z θjc + T C RECTNGULR PULE DURTION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration TO-247 (B) Package Outline e1 C: Tin, ilver, Copper D 3 PK Package Outline e3 1% n Plated Rev D (.185) 5.31 (.29) 1.49 (.59) 2.49 (.98).4 (.16) 1.16(.4) 2.21 (.87) 2.59 (.12) 2.8 (.819) (.845) 6.15 (.242) BC 4.5 (.177) Max (.78) 2.32 (.8) 1.1 (.4) 1.4 (.55) 5.45 (.215) BC 2-Plcs. Dimensions in Millimeters (Inches) (.61) (.64) 5.38 (.212) 6.2 (.244) 3.5 (.138) 3.81 (.15) 2.87 (.113) 3.12 (.123) 1.65 (.65) 2.13 (.84) Gate ource (Heat ink) 4.98 (.196) 5.8 (.2) 1.47 (.58) 1.57 (.62).46 (.18) {3 Plcs}.56 (.22).2 (.1).178 (.7) 2.67 (.15) 2.84 (.112) 1.22 (.48) 1.32 (.52) (.628) 16.5(.632) Revised 4/18/ (.5) 1.4 (.55) 1.98 (.78) 2.8 (.82) 5.45 (.215) BC {2 Plcs. } 1.4 (.41) 1.15(.45) (.543) 13.99(.551) ource Gate Dimensions in Millimeters (Inches) (.528) 13.51(.532) Revised 8/29/ (.15) 4.6 (.16) (Base of Lead) Heat ink (Drain) and Leads are Plated (.453) (.457)
5 Mouser Electronics uthorized Distributor Click to iew Pricing, Inventory, Delivery & Lifecycle Information: Microsemi: PT37F5
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Power MOSFET PRODUCT SUMMARY (V) 400 V R DS(on) (Ω) = 10 V 1.8 Q g (Max.) (nc) 0 Q gs (nc) 3.3 Q gd (nc) 11 Configuration Single TO-0AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S N-Channel
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) () = 0.85 Q g max. (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single D TO-220AB G G DS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free
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More informationFeatures V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit
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l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs from International Rectifier utilize
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l l l l dvanced Process Technology Optimized for 4.5V-7.V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically to meet the demands
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V DSS R DS(on) typ. max. I D 300V 25.5m 32m 70A Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits
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l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
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General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
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