TO-220FM. lapplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 500

Transcription

1 R5016ANX Nch 500V 16A Power MOSFET Datasheet V DSS 500V R DS(on) (Max.) 0.27Ω I D ±16A P D 50W loutline TO-220FM lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant linner circuit lpackaging specifications Packing lapplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 500 labsolute maximum ratings (T a = 25 C) Bulk Reel size (mm) - Taping code - Marking R5016ANX Parameter Symbol Value Unit Drain - Source voltage V DSS 500 V Continuous drain current T C = 25 C I D *1 ±16 A T C = 100 C I D *1 ±7.8 A Pulsed drain current I D,pulse *2 ±64 A Gate - Source voltage V GSS ±30 V Avalanche energy, single pulse E AS *3 17 mj Avalanche energy, repetitive E AR *4 3.5 mj Avalanche current I AR *3 8 A Power dissipation (T c = 25 C) P D 50 W Junction temperature T j 150 Range of storage temperature T stg -55 to +150 Reverse diode dv/dt dv/dt 15 V/ns 2014 ROHM Co., Ltd. All rights reserved. 1/ Rev.001

2 labsolute maximum ratings Parameter Symbol Conditions Values Unit Drain - Source voltage slope dv/dt V DS = 400V, I D = 16A T j = V/ns lthermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - case R thjc /W Thermal resistance, junction - ambient R thja /W Soldering temperature, wavesoldering for 10s T sold lelectrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage Drain - Source avalanche breakdown voltage V (BR)DSS V GS = 0V, I D = 1mA V V (BR)DS V GS = 0V, I D = 8A V Zero gate voltage drain current V DS = 500V, V GS = 0V I DSS T j = 25 C T j = 125 C Gate - Source leakage current I GSS V GS = ±30V, V DS = 0V - - ±100 na Gate threshold voltage V GS(th) V DS = 10V, I D = 1mA V Static drain - source on - state resistance R DS(on) *6 V GS = 10V, I D = 8A T j = 25 C T j = 125 C Gate input resistance R G f = 1MHz, open drain Ω μa Ω 2014 ROHM Co., Ltd. All rights reserved. 2/ Rev.001

3 lelectrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Transconductance g fs *6 V DS = 10V, I D = 8A S Input capacitance C iss V GS = 0V Output capacitance C oss V DS = 25V Reverse transfer capacitance C rss f = 1MHz Effective output capacitance, energy related Effective output capacitance, time related C o(er) V GS = 0V, C o(tr) V DS = 0V to 400V Turn - on delay time t d(on) *6 V DD 250V, V GS = 10V Rise time t r *6 I D = 8A Turn - off delay time t d(off) *6 R L = 31.3Ω Fall time t f *6 R G = 10Ω Unit pf pf ns lgate charge characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Total gate charge Q *6 g V DD 250V Gate - Source charge Q *6 gs I D = 16A nc Gate - Drain charge Q *6 gd V GS = 10V Gate plateau voltage V (plateau) V DD 250V, I D = 16A V *1 Limited only by maximum temperature allowed. *2 Pw 10μs, Duty cycle 1% *3 L 500μH, V DD =50V, R G =25Ω, starting T j =25 C *4 L 500μH, V DD =50V, R G =25Ω, starting T j =25 C, f=10khz *5 Reference measurement circuits Fig.5-1. *6 Pulsed 2014 ROHM Co., Ltd. All rights reserved. 3/ Rev.001

4 lbody diode electirical characteristics (Source-Drain) (T a = 25 C) Parameter Symbol Conditions Inverse diode continuous, forward current Inverse diode direct current, pulsed I S *1 T C = 25 Values Min. Typ. Max. Unit A I SM * A Forward voltage V SD *6 V GS = 0V, I S = 16A V Reverse recovery time t *6 rr ns I S = 16A Reverse recovery charge Q *6 rr μc di/dt = 100A/μs Peak reverse recovery current I *6 rrm A Peak rate of fall of reverse recovery current di rr /dt T j = A/μs ltypical transient thermal characteristics Symbol Value Unit Symbol Value Unit R th C th R th K/W C th Ws/K R th C th ROHM Co., Ltd. All rights reserved. 4/ Rev.001

5 lelectrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 2014 ROHM Co., Ltd. All rights reserved. 5/ Rev.001

6 lelectrical characteristic curves Fig.4 Avalanche Current vs. Inductive Load Fig.5 Avalanche Power Losses Fig.6 Avalanche Energy Derating Curve vs. Junction Temperature 2014 ROHM Co., Ltd. All rights reserved. 6/ Rev.001

7 lelectrical characteristic curves Fig.7 Typical Output Characteristics(I) Fig.8 Typical Output Characteristics(II) Fig.9 Tj = 150 C Typical Output Characteristics (I) Fig.10 Tj = 150 C Typical Output Characteristics (II) 2014 ROHM Co., Ltd. All rights reserved. 7/ Rev.001

8 lelectrical characteristic curves Fig.11 Breakdown Voltage vs. Junction Temperature Fig.12 Typical Transfer Characteristics Fig.13 Gate Threshold Voltage vs. Junction Temperature Fig.14 Transconductance vs. Drain Current 2014 ROHM Co., Ltd. All rights reserved. 8/ Rev.001

9 lelectrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature Fig.17 Static Drain - Source On - State Resistance vs. Drain Current 2014 ROHM Co., Ltd. All rights reserved. 9/ Rev.001

10 lelectrical characteristic curves Fig.18 Typical Capacitance vs. Drain - Source Voltage Fig.19 Coss Stored Energy Fig.20 Switching Characteristics Fig.21 Dynamic Input Characteristics 2014 ROHM Co., Ltd. All rights reserved. 10/ Rev.001

11 lelectrical characteristic curves Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs. Inverse Diode Forward Current 2014 ROHM Co., Ltd. All rights reserved. 11/ Rev.001

12 lmeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform 2014 ROHM Co., Ltd. All rights reserved. 12/ Rev.001

13 ldimensions 2014 ROHM Co., Ltd. All rights reserved. 13/ Rev.001

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