TSMT3. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000
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1 RQ5E025AT Pch -30V -2.5A Middle Power MOSFET Datasheet V DSS -30V R DS(on) (Max.) I D P D 91mΩ ±2.5A 1W lfeatures 1) Low on - resistance. 2) Small Surface Mount Package (TSMT3). 3) Pb-free lead plating ; RoHS compliant loutline TSMT3 linner circuit lpackaging specifications Packing Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000 labsolute maximum ratings (T a = 25 C) Taping code Marking TCL Parameter Symbol Value Unit Drain - Source voltage V DSS -30 V Continuous drain current I D ±2.5 A Pulsed drain current I D,pulse *2 ±12 A Gate - Source voltage V GSS ±20 V Avalanche energy, single pulse E AS *3 4.5 mj Avalanche current I AS *3-2.5 A Power dissipation P D *4 1 W Junction temperature T j 150 Range of storage temperature T stg -55 to +150 JS 2014 ROHM Co., Ltd. All rights reserved. 1/ Rev.001
2 lthermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - ambient R *4 thja /W lelectrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V (BR)DSS V GS = 0V, I D = -1mA V Breakdown voltage temperature coefficient Zero gate voltage drain current ΔV (BR)DSS I D = -1mA ΔT j referenced to mv/ I DSS V DS = -30V, V GS = 0V μa Gate - Source leakage current I GSS V GS = ±20V, V DS = 0V - - ±100 na Gate threshold voltage V GS(th) V DS = V GS, I D = -1mA V Gate threshold voltage temperature coefficient Static drain - source on - state resistance ΔV GS(th) I D = -1mA ΔT j referenced to 25 R DS(on) * mv/ V GS = -10V, I D = -2.5A V GS = -4.5V, I D = -2.5A Transconductance g fs *5 V DS = -5V, I D = -2.5A S mω *1 Limited only by maximum temperature allowed. *2 Pw 10μs, Duty cycle 1% *3 L 1mH, V DD = -15V, R G = 25Ω, STARTING T ch = 25 Fig.3-1,3-2 *4 Mounted on a ceramic boad ( mm) *5 Pulsed 2014 ROHM Co., Ltd. All rights reserved. 2/ Rev.001
3 lelectrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Input capacitance C iss V GS = 0V Output capacitance C oss V DS = -15V Reverse transfer capacitance C rss f = 1MHz Turn - on delay time t *5 d(on) V DD -15V,V GS = -10V Rise time t *5 r I D = -1.25A Turn - off delay time t *5 d(off) R L = 12Ω Fall time t *5 f R G = 10Ω Unit pf ns lgate charge characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Total gate charge Q *5 g V GS = -10V V DD -15V Gate - Source charge Q *5 gs I D = -2.5A V GS = -4.5V Gate - Drain charge Q *5 gd Unit nc lbody diode electrical characteristics (Source-Drain) (T a = 25 C) Parameter Symbol Conditions Body diode continuous forward current Body diode pulse current I S *1 Values Min. Typ. Max T a = 25 I *2 SP Forward voltage V SD *5 V GS = 0V, I S = -0.8A V Unit A 2014 ROHM Co., Ltd. All rights reserved. 3/ Rev.001
4 lelectrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Fig.4 Single Pulse Maximum Power dissipation 2014 ROHM Co., Ltd. All rights reserved. 4/ Rev.001
5 lelectrical characteristic curves Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) Fig.7 Breakdown Voltage vs. Junction Temperature 2014 ROHM Co., Ltd. All rights reserved. 5/ Rev.001
6 lelectrical characteristic curves Fig.8 Typical Transfer Characteristics Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig.10 Transconductance vs. Drain Current 2014 ROHM Co., Ltd. All rights reserved. 6/ Rev.001
7 lelectrical characteristic curves Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature 2014 ROHM Co., Ltd. All rights reserved. 7/ Rev.001
8 lelectrical characteristic curves Fig.14 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) Fig.16 Static Drain - Source On - State Resistance vs. Drain Current(III) 2014 ROHM Co., Ltd. All rights reserved. 8/ Rev.001
9 lelectrical characteristic curves Fig.17 Typical Capacitance vs. Drain - Source Voltage Fig.18 Switching Characteristics Fig.19 Dynamic Input Characteristics Fig.20 Source Current vs. Source Drain Voltage 2014 ROHM Co., Ltd. All rights reserved. 9/ Rev.001
10 lmeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform 2014 ROHM Co., Ltd. All rights reserved. 10/ Rev.001
11 ldimensions 2014 ROHM Co., Ltd. All rights reserved. 11/ Rev.001
12
13 Datasheet RQ5E025AT - Web Page Distribution Inventory Part Number RQ5E025AT Package TSMT3 Unit Quantity 3000 Minimum Package Quantity 3000 Packing Type Taping Constitution Materials List inquiry RoHS Yes
TSMT3. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000
RQ5L015SP Pch -60V -1.5A Middle Power MOSFET Datasheet V DSS -60V R DS(on) (Max.) I D P D 280mΩ ±1.5A 1W lfeatures 1) Low on - resistance. 2) High Power small mold Package (TSMT3). 3) Pb-free lead plating
More informationTSMT6. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000
RRQ020P03 Pch -30V -2A Middle Power MOSFET Datasheet V DSS -30V R DS(on) (Max.) 160mΩ I D ±2A P D 1.25W lfeatures 1) Low on - resistance. 2) High Power small mold Package (TSMT6). 3) Pb-free lead plating
More informationHSMT8. Embossed Tape Reel size (mm) 330 lapplication Type Tape width (mm) 12 Switching Basic ordering unit (pcs) 3000
RQ3E180AJ Nch 30V 18A Middle Power MOSFET Datasheet V DSS R DS(on) (Max.) 30V 4.5mΩ I D ±30A P D 2W lfeatures 1) Low on - resistance. 2) Small Surface Mount Package. 3) Pb-free lead plating ; RoHS compliant
More informationTSMT8. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000
RQ1E050RP Pch -30V -5A Middle Power MOSFET Datasheet V DSS -30V R DS(on) (Max.) 31mΩ I D ±5A P D 1.5W lfeatures 1) Low on - resistance. 2) Built-in G-S protection diode. 3) Small surface mount package(tsmt8).
More informationTSMT8. Embossed Tape lapplication Reel size (mm) 180 Switching Type Tape width (mm) 8 Basic ordering unit (pcs) 3000 Taping code
QH8MA3 30V Nch+Pch Middle Power MOSFET Datasheet loutline Symbol Tr1:Nch Tr2:Pch TSMT8 V DSS 30V -30V R DS(on) (Max.) 29mΩ 48mΩ I D ±7.0A ±5.5A P D 2.5W lfeatures 1) Low on - resistance. 2) Small Surface
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RT1A060AP Pch -12V -6A Middle Power MOSFET Datasheet V DSS -12V R DS(on) (Max.) 19mΩ I D ±6A P D 1.25W lfeatures 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface
More informationHUML2020L8 DFN2020-8S. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000
RF4E080GN Nch 30V 8A Middle Power MOSFET Datasheet V DSS R DS(on) (Max.) 30V 17.6mΩ I D ±8A loutline HUML2020L8 P D 2W DFN2020-8S lfeatures 1) Low on - resistance. 2) High power small mold package (HUML2020L8).
More informationEmbossed Tape Reel size (mm) 330 lapplication Type Tape width (mm) 24 Switching Basic ordering unit (pcs) 1000
R6011KNJ Nch 600V 11A Power MOSFET Datasheet loutline V DSS 600V TO-263 R DS(on) (Max.) 0.39Ω SC-83 I D ±11A LPT(S) P D 124W lfeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use
More informationTSMT5. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Load switch, DC/ DC conversion Basic ordering unit (pcs) 3000
QS5U27 2.5V Drive Pch+SBD MOSFET Datasheet V DSS -20V R DS(on) (Max.) 340mΩ I D ±1.5A P D 1.25W loutline TSMT5 lfeatures 1) The QS5U27 combines Pch MOSFET with a Schottky barrier diode in a single TSMT5
More informationTSMT5. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000
QS5U36 1.5V Drive Nch+SBD MOSFET Datasheet V DSS R DS(on) (Max.) I D 20V 133mΩ ±2.5A P D 1.25W loutline TSMT5 lfeatures 1) The QS5U36 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5
More informationCPT3. Embossed Tape Reel size (mm) 330 lapplication Type Tape width (mm) 16 Switching Power Supply Basic ordering unit (pcs) 2500
R6002END Nch 600V 2A Power MOSFET Datasheet V DSS 600V R DS(on) (Max.) 3.4Ω I D P D ±1.7A 20W loutline CPT3 lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed
More informationTO-3PF. Reel size (mm) - lapplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 360 Taping code
R6015ANZ Nch 600V 15A Power MOSFET Datasheet V DSS 600V R DS(on) (Max.) 0.3Ω I D ±15A P D 110W lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed to be
More informationTSMT5. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Load switch, DC/ DC conversion Basic ordering unit (pcs) 3000
QS5U13 2.5V Drive Nch+SBD MOSFET Datasheet V DSS R DS(on) (Max.) I D 30V 154mΩ ±2.0A P D 1.25W loutline TSMT5 lfeatures 1) The QS5U13 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5
More informationTO-220FM. lapplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 500
R5016ANX Nch 500V 16A Power MOSFET Datasheet V DSS 500V R DS(on) (Max.) 0.27Ω I D ±16A P D 50W loutline TO-220FM lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS )
More informationTO-220FM. Not Recommended for. lapplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 500
R5005CNX Nch 500V 5A Power MOSFET Datasheet V DSS 500V R DS(on) (Max.) 1.6Ω I D ±5A P D 40W lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed to be ±30V.
More informationEmbossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000
RRQ020P03 Pch -30V -2A Small Signal MOSFET Datasheet loutline V DSS -30V SOT-457T R DS(on) (Max.) 160mΩ TSMT6 I D ±2A P D 1.25W lfeatures 1) Low on - resistance. 2) High Power small mold Package (TSMT6).
More informationEmbossed Tape lapplication Reel size (mm) 330 Switching Type Tape width (mm) 12 Basic ordering unit (pcs) 2500
HP8MA2 30V Nch+Pch Middle Power MOSFET Datasheet loutline Symbol Tr1:Nch Tr2:Pch V DSS 30V -30V R DS(on) (Max.) 9.6mΩ 17.9mΩ HSOP8 I D ±18A ±15A P D 7.0W lfeatures 1) Low on - resistance. 2) Small Surface
More informationOutline TSMT8. Inner circuit. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000
RQE7RP Pch -3V -7A Power MOSFET Datasheet V DSS -3V R DS(on) (Max.) 7mW I D -7A P D.5W Outline TSMT8 () (2) (3) (4) (8) (7) (6) (5) Features ) Low on - resistance. 2) Built-in G-S Protection Diode. 3)
More informationEmbossed Tape lapplication Reel size (mm) 330 Switching Type Tape width (mm) 12 Basic ordering unit (pcs) 2500
SH8M24 45V Nch+Pch Power MOSFET Datasheet loutline Symbol Tr1:Nch Tr2:Pch V DSS 45V -45V R DS(on) (Max.) 46mΩ 63mΩ SOP8 I D ±6A ±6A P D 3.1W lfeatures 1) Low on - resistance. 2) Small Surface Mount Package
More informationOutline. Inner circuit. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000
Pch -3V -3A Power MOSFET Datasheet Outline V DSS -3V TSMT6 R DS(on) (Max.) 75mW I D -3A P D.25W () (2) (3) (6) (5) (4) Features ) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface
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Pch -2V -7A Power MOSFET Datasheet V DSS -2V R DS(on) (Max.) 4mW I D -7A P D.5W Outline TSMT8 () (2) (3) (4) (8) (7) (6) (5) Features Inner circuit ) Low on - resistance. 2) Built-in G-S Protection Diode.
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Nch 6V 3A Power MOSFET Datasheet V DSS R DS(on) (Max.) I D P D 6V 85mW 3A W Outline TSMT3 () (2) (3) Features ) Low on - resistance. 2) Built-in G-S Protection Diode. Inner circuit () Gate (2) Source (3)
More informationEmbossed Tape lapplication Reel size (mm) 330 Switching Type Tape width (mm) 12 Basic ordering unit (pcs) 2500
HP8S36 30V Nch+Nch Middle Power MOSFET Datasheet loutline Symbol Tr1:Nch Tr2:Nch V DSS 30V 30V R DS(on) (Max.) 8.8mΩ 2.4mΩ HSOP8 I D ±27A ±80A P D 22W 29W lfeatures 1) Low on - resistance. 2) Pb-free lead
More informationOutline. Inner circuit. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000
QS6K2 Nch 45V A Power MOSFET Datasheet Outline V DSS 45V TSMT6 R DS(on) (Max.) 42mW I D A P D.25W () (2) (3) (6) (5) (4) Features ) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface
More informationEmbossed Tape lapplication Reel size (mm) 180 Switching Type Tape width (mm) 8 Basic ordering unit (pcs) 3000
UT6MA3 20V Nch+Pch Middle Power MOSFET Datasheet loutline Symbol Tr1:Nch Tr2:Pch DFN2020-8D V DSS 20V -20V R DS(on) (Max.) 42mΩ 59mΩ I D ±5.5A ±5.0A P D 2.0W HUML2020L8 lfeatures 1) Low on - resistance.
More informationOutline. Inner circuit. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000
Pch -3V -4A Power MOSFET Datasheet Outline V DSS -3V TSST8 R DS(on) (Max.) 45mW I D -4A P D.25W () (2) (8) (7) (6) (3) (4) (5) Features ) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small
More informationEmbossed Tape Reel size (mm) 330 lapplication Type Tape width (mm) 12 Switching Basic ordering unit (pcs) 2500
RS3E075AT Pch -30V -7.5A Middle Power MOSFET Datasheet V DSS -30V R DS(on) (Max.) 23.5mΩ loutline I D ±7.5A SOP8 P D 2.0W lfeatures 1) Low on - resistance. 2) Small Surface Mount Package (SOP8). 3) Pb-free
More informationEmbossed Tape lapplication Reel size (mm) 180 Switching Type Tape width (mm) 8 Basic ordering unit (pcs) 3000
QH8M22 40V Nch+Pch Power MOSFET Datasheet loutline Symbol Tr1:Nch Tr2:Pch V DSS 40V -40V R DS(on) (Max.) 46.0mΩ 190mΩ TSMT8 I D ±4.5A ±2.0A P D 1.5W lfeatures 1) Low on - resistance 2) Small Surface Mount
More informationEmbossed Tape lapplication Reel size (mm) 180 Switching Type Tape width (mm) 8.0 Basic ordering unit (pcs) 3000
HS8K11 30V Nch+Nch Power MOSFET Datasheet loutline Symbol Tr1:Nch Tr2:Nch V DSS 30V 30V R DS(on) (Max.) 17.9mΩ 13.3mΩ HSML3030L10 I D ±7A ±11A P D 2.0W lfeatures 1) Low on - resistance 2) Pb-free lead
More informationEmbossed Tape lapplication Reel size (mm) 180 Switching Type Tape width (mm) 8 Basic ordering unit (pcs) 3000 Taping code
QS6K1 Nch+Nch 30V 1A Small Signal MOSFET Datasheet loutline V DSS 30V SOT-457T R DS(on) (Max.) 238mΩ SC-95 I D ±1.0A TSMT6 P D 1.25W lfeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode.
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RQ3L090GN Nch 60V 30A Middle Power MOSFET Datasheet V DSS 60V loutline R DS(on) (Max.) 13.9mΩ I D ±30A HSMT8 P D 20W lfeatures 1) Low on - resistance. 2) Small Surface Mount Package. 3) Pb-free lead plating
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