Outline TSST8. Inner circuit. (1) Drain (2) Drain (3) Drain (4) Gate. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000
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1 RTA45AP Pch -2V -4.5A Power MOSFET Datasheet V DSS R DS(on) (Max.) I D 2V 3m 4.5A P D.25W Features ) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8). Outline (8) TSST8 (7) Inner circuit () Drain (2) Drain (3) Drain (4) Gate () (2) (3) (4) (5) Source (6) Drain (7) Drain (8) Drain (6) (5) 4) Pb-free lead plating ; RoHS compliant ESD PROTECTION DIODE 2 BODY DIODE Packaging specifications Packaging Taping Application Reel size (mm) 8 DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3, Taping code Marking TR SC Absolute maximum ratings(t a = 25 C) Parameter Symbol Value Unit Drain - Source voltage V DSS 2 V Continuous drain current I D * Pulsed drain current I D,pulse *2 4.5 A 8 A Gate - Source voltage V GSS to 8 V Power dissipation P D *3 P D *4.25 W.65 W Junction temperature T j 5 C Range of storage temperature T stg 55 to 5 C / Rev.C
2 RTA45AP Thermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - ambient R thja *3 Thermal resistance, junction - ambient R thja *4 - - C/W C/W Electrical characteristics(t a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V (BR)DSS V GS = V, I D = ma V Breakdown voltage temperature coefficient ΔV (BR)DSS ΔT j I D = ma referenced to 25 C mv/ C Zero gate voltage drain current I DSS V DS = 2V, V GS = V - - A Gate - Source leakage current I GSS V GS = 8V, V DS = V - - A Gate threshold voltage V GS (th) V DS = 6V, I D = ma.3 -. V Gate threshold voltage temperature coefficient ΔV (GS)th ΔT j I D = ma referenced to 25 C mv/ C, I D = 4.5A Static drain - source on - state resistance R DS(on) V GS = 2.5V, I D = 2.2A V GS =.8V, I D = 2.2A V GS =.5V, I D =.9A - 5 m, I D = 4.5A, T j =25 C Gate input resistannce R G f = MHz, open drain Transconductance g fs V DS = 6V, I D = 4.5A S * Limited only by maximum temperature allowed. *2 Pw s, Duty cycle % *3 Mounted on a ceramic board (3 3.8mm) *4 Mounted on a FR4(2 2.8mm) Pulsed 2/ Rev.C
3 RTA45AP Electrical characteristics(t a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Input capacitance C iss V GS = V Output capacitance C oss V DS = 6V pf Reverse transfer capacitance C rss f = MHz Turn - on delay time t d(on) Rise time t r Turn - off delay time t d(off) Fall time t f V DD 6V, I D = 2.2A R L = R G = ns Gate Charge characteristics(t a = 25 C) Parameter Symbol Conditions Total gate charge Q g V DD 6V, I D = 4.5A Gate - Source charge Q gs Gate - Drain charge Q gd V DD 6V, I D = 4.5A Values Min. Typ. Max Unit nc Body diode electrical characteristics (Source-Drain)(T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Inverse diode continuous, forward current I S * T a = 25 C - - A Forward voltage V SD V GS = V, I s = 4.5A V 3/ Rev.C
4 RTA45AP Electrical characteristic curves Fig. Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Power Dissipation : P D /P D max. [%] Operation in this area is limited by R DS (on) ( ) DC Operation T a =25ºC Single Pulse Mounted on a ceramic board. (3mm 3mm.8mm) P W = μs P W = ms P W = ms. Junction Temperature : Tj [ C] Drain - Source Voltage : V DS [V] Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Fig.4 Single Pulse Maxmum Power dissipation Normalized Transient Thermal Resistance : r (t).. T a =25ºC Single Pulse Pulse Width : Pw [s] top D= D=.5 D=. D=.5 D=. bottom Signle Rth(ch-a)=ºC/W Rth(ch-a)(t)=r(t) Rth(ch-a) Mounted on ceramic board (3mm 3mm.8mm)... Peak Transient Power : P(W) T a =25ºC Single Pulse... Pulse Width : Pw [s] 4/ Rev.C
5 RTA45AP Electrical characteristic curves Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) V GS =.8V V GS =.5V V GS = 4.V V GS = 2.5V V GS = 2.V V GS =.2V V GS =.V V GS = 4.V V GS = 2.5V V GS = 2.V V GS =.8V V GS =.5V V GS =.2V V GS =.V Drain - Source Voltage : -V DS [V] Drain - Source Voltage : -V DS [V] 5/ Rev.C
6 RTA45AP Electrical characteristic curves Drain - Source Breakdown Voltage : -V (BR)DSS [V] Fig.7 Breakdown Voltage vs. Junction Temperature 3 2 V GS =V I D = ma Fig.8 Typical Transfer Characteristics... V DS = 6V T a =25 C T a =75 C T a = 25 C Junction Temperature : T j [ C] Gate - Source Voltage : -V GS [V] Gate Threshold Voltage : -V GS(th) [V] Fig.9 Gate Threshold Voltage vs. Junction Temperature V DS = 6V I D = ma Transconductance : g fs [S] Fig. Transconductance vs. Drain Current V DS = 6V T a = 25 C T a =75 C T a =25 C Junction Temperature : T j [ C] 6/ Rev.C
7 RTA45AP Electrical characteristic curves Drain Current Dissipation : I D /I D max. (%) Fig. Drain CurrentDerating Curve Junction Temperature : T j [ºC] Static Drain - Source On-State Resistance : R DS(on) [m ] Fig.2 Static Drain - Source On - State Resistance vs. Gate Source Voltage I D = 4.5A I D =.9A Gate - Source Voltage : -V GS [V] Fig.3 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.4 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : R DS(on) [m ] V GS =.5V V GS =.8V V GS = 2.5V. Static Drain - Source On-State Resistance : R DS(on) [m ] I D = 4.5A Junction Temperature : T j [ºC] 7/ Rev.C
8 RTA45AP Electrical characteristic curves Static Drain - Source On-State Resistance : RDS(on) [m ] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(II) T a =25 C T a =75 C T a = 25 C. Static Drain - Source On-State Resistance : RDS(on) [m ] Fig.6 Static Drain - Source On - State Resistance vs. Drain Current(III) V GS = 2.5V T a =25 C T a =75 C T a = 25 C. Static Drain - Source On-State Resistance : RDS(on) [m ] Fig.7 Static Drain - Source On - State Resistance vs. Drain Current(IV) V GS =.8V T a =25 C T a =75 C T a = 25 C. Drain Current :-I D [A] 8/ Rev.C
9 RTA45AP Electrical characteristic curves Capacitance : C [pf] Fig.8 Typical Capacitance vs. Drain - Source Voltage f=mhz V GS =V C rss C iss C oss Switching Time : t [ns] Fig.9 Switching Characteristics t f t r t d(off) V DD = 6V R G = t d(on).... Drain - Source Voltage : -V DS [V] Fig.2 Dynamic Input Characteristics 5 Fig.2 Source Current vs. Source Drain Voltage V GS =V Gate - Source Voltage : -V GS [V] V DD = 6V I D = 4.5A R G = Source Current : -I S [A].. T a =25 C T a =75 C T a = 25 C Total Gate Charge : Q g [nc] Source-Drain Voltage : -V SD [V] 9/ Rev.C
10 RTA45AP Measurement circuits Fig.- Switching Time Measurement Circuit Fig.-2 Switching Waveforms VGS ID VDS Pulse width RG D.U.T. RL VDD VGS VDS % 5% 9% 5% % % 9% 9% td(on) tr td(off) tf ton toff Fig.2- Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS ID VDS VG RL Qg IG(Const.) D.U.T. VGS VDD Qgs Qgd Charge / Rev.C
11 RTA45AP Dimensions (Unit : mm) TSST8 D L A c Lp E HE e b x L S A Lp A S e l l2 y S A b3 e Patterm of terminal position areas DIM MILIMETERS INCHES MIN MAX MIN MAX A A..5.2 b c D E e.65.3 HE L L Lp Lp x y DIM MILIMETERS INCHES MIN MAX MIN MAX e.46.6 b l l Dimension in mm/inches / Rev.C
12 Notice Notes ) 2) 3) 4) 5) 6) 7) 8) 9) ) ) 2) 3) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifications : Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. The Products specified in this document are not designed to be radiation tolerant. For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 4) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System R2A
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