S4108 N-channel SiC power MOSFET bare die

Transcription

1 S48 N-channel SiC power MOSFET bare die V DSS R DS(on) (Typ.) 2V 8m I D 3A * Features ) Low on-resistance Inner circuit (2) 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel () * () Gate (2) Drain (3) Source 5) Simple to drive * Body Diode (3) Application Solar inverters DC/DC converters Switch mode power supplies Induction heating Motor drives Absolute maximum ratings (T a = 25 C) Parameter Symbol Value Unit Drain - Source voltage V DSS 2 V Continuous drain current T c = 25 C I D * drain current I D,pulse *2 3 A 77 A Gate - Source voltage (DC) V GSS 4 to +22 V Gate-Source Surge Voltage (t surge < 3nsec) V GSS_surge *4 4 to +26 V Recommended Drive Voltage V GS_op / +8 V Junction temperature T j 75 C Range of storage temperature T stg 55 to 75 C 26 ROHM Co., Ltd. All rights reserved. / Rev.D

2 S48 Electrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V (BR)DSS V GS = V, I D = ma V Zero gate voltage drain current I DSS V DS = 2V, V GS = V T j = 25 C - T j = 5 C A Gate - Source leakage current I GSS V GS = 22V, V DS = V - - na Gate - Source leakage current I GSS V GS = 4V, V DS = V - - na Gate threshold voltage V GS (th) V DS = V, I D = 5mA V Static drain - source on - state resistance R DS(on) V GS = 8V, I D = A T j = 25 C - 8 T j = 25 C m Gate input resistance R G f = MHz, open drain ROHM Co., Ltd. All rights reserved. 2/ Rev.D

3 S48 Electrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Transconductance g fs V DS = V, I D = A S Input capacitance C iss V GS = V Output capacitance C oss V DS = 8V pf Reverse transfer capacitance C rss f = MHz Effective output capacitance, energy related C o(er) V GS = V V DS = V to 6V pf Turn - on delay time t d(on) Rise time t r Turn - off delay time t d(off) V DD = 4V, I D = A V GS = 8V/V R L = ns Fall time t f R G = V Turn - on switching loss DD = 6V, I D =A E on V GS = 8V/V R G = L=75 H *E Turn - off switching loss on includes diode E off reverse recovery J Gate Charge characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Total gate charge Q g Gate - Source charge Q gs V DD = 6V I D = A nc Gate - Drain charge Q gd V GS = 8V Gate plateau voltage V (plateau) V DD = 6V, I D = A V * For T j =75 C and thermal dissiparion to ambience of 65W or more. Limited only by maximum temperature allowed. *2 PW s, Duty cycle % 26 ROHM Co., Ltd. All rights reserved. 3/ Rev.D

4 S48 Body diode electrical characteristics (Source-Drain) (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Inverse diode continuous, forward current I S * Tc = 25 C A Inverse diode direct current, pulsed I SM * A Forward voltage V SD V GS = V, I S = A V Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm I F =A, V R = 6V di/dt = A/ s ns nc A *4 Example of acceptable Vgs waveform 26 ROHM Co., Ltd. All rights reserved. 4/ Rev.D

5 S48 Electrical characteristic curves Fig. Typical Output Characteristics(I) Fig.2 Typical Output Characteristics(II) 3 2 2V 8V 6V 4V 2V V 5 5 2V 8V 6V 4V 2V V V GS = 8V V GS = 8V Fig.3 T j = 5ºC Typical Output Characteristics(I) 3 2 2V 8V 6V 4V 2V T a = 5ºC V V GS = 8V Fig.4 T j = 5ºC Typical Output Characteristics(II) 5 5 2V 8V 6V 2V 4V V V GS = 8V T a = 5ºC ROHM Co., Ltd. All rights reserved. 5/ Rev.D

6 S48 Electrical characteristic curves Fig.5 Typical Transfer Characteristics (I) Fig.6 Typical Transfer Characteristics (II) 3 V DS = V V DS = V. T a = 5ºC T a = 75ºC T a = 25ºC 2 T a = 5ºC T a = 75ºC T a = 25ºC Gate - Source Voltage : V GS [V] Gate - Source Voltage : V GS [V] Gate Threshold Voltage : V GS(th) [V] Fig.7 Gate Threshold Voltage vs. Junction Temperature V DS = V I D = 5mA Transconductance : g fs [S] Fig.8 Transconductance vs. Drain Current V DS = V T a = 5ºC T a = 75ºC T a = 25ºC.. Junction Temperature : T j [ºC] 26 ROHM Co., Ltd. All rights reserved. 6/ Rev.D

7 S48 Electrical characteristic curves Static Drain - Source On-State Resistance : R DS(on) [ ] Fig.9 Static Drain - Source On - State Resistance vs. Gate - Source Voltage I D = A I D = 2A Static Drain - Source On-State Resistance : R DS(on) [ ] Fig. Static Drain - Source On - State Resistance vs. Junction Temperature V GS = 8V I D = 2A I D = A Gate - Source Voltage : V GS [V] Junction Temperature : T j [ºC] Fig. Static Drain - Source On - State Resistance vs. Drain Current Static Drain - Source On-State Resistance : R DS(on) [ ].. V GS = 8V T a = 5ºC T a = 25ºC T a = 75ºC T a = 25ºC 26 ROHM Co., Ltd. All rights reserved. 7/ Rev.D

8 S48 Electrical characteristic curves Fig.2 Typical Capacitance vs. Drain - Source Voltage Fig.3 Coss Stored Energy 25 Capacitance : C [pf] f = MHz V GS = V C iss C oss C rss. Coss Stored Energy : E OSS [ J] Fig.4 Switching Characteristics Fig.5 Dynamic Input Characteristics 2 Switching Time : t [ns] t d(off) t f t r t d(on) V DD = 4V V GS = 8V R G =. Gate - Source Voltage : V GS [V] 5 5 V DD = 6V I D = A Total Gate Charge : Q g [nc] 26 ROHM Co., Ltd. All rights reserved. 8/ Rev.D

9 S48 Electrical characteristic curves Fig.6 Typical Switching Loss vs. Drain - Source Voltage 3 Fig.7 Typical Switching Loss vs. Drain Current 2 Switching Energy : E [ J] I D =A V GS = 8V/V R G = L=75 H E on E off Switching Energy : E [ J] V DD =6V V GS = 8V/V R G = L=75 H E on E off Fig.8 Typical Switching Loss vs. External Gate Resistance 2 Switching Energy : E [ J] V DD =6V I D =A V GS = 8V/V L=75 H E on E off External Gate Resistance : R G [ ] 26 ROHM Co., Ltd. All rights reserved. 9/ Rev.D

10 S48 Electrical characteristic curves Fig.9 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.2 Reverse Recovery Time vs.inverse Diode Forward Current Inverse Diode Forward Current : I S [A].. V GS = V T a = 5ºC T a = 75ºC T a = 25ºC Reverse Recovery Time : t rr [ns] di / dt = A / us V R = 6V V GS = V Source - Drain Voltage : V SD [V] Inverse Diode Forward Current : I S [A] 26 ROHM Co., Ltd. All rights reserved. / Rev.D

11 S48 Measurement circuits Fig.- Switching Time Measurement Circuit Fig.-2 Switching Waveforms Fig.2- Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3- Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms E on = I D V DS E off = I D V DS Same type device as D.U.T. V DS I rr V surge D.U.T. I D I D Fig.4- Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform D.U.T. 26 ROHM Co., Ltd. All rights reserved. / Rev.D

12 Notice Notes ) 2) 3) 4) 5) 6) 7) 8) 9) ) ) 2) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifications. Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. The Products specified in this document are not designed to be radiation tolerant. For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 3) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System