HCS70R1K6 700V N-Channel Super Junction MOSFET

Transcription

1 HCS70RK6 700 NChannel Super Junction MOSFET Features ery Low FOM (R DS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 00% valanche Tested Builtin ESD Diode pplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) T Power & LED Lighting Power Key Parameters Parameter B j,max I D R DS(on), max Qg, Typ Package & Internal Circuit G D S TO0F alue Unit Ω nc SYMBOL HCS70RK6 Super Junction MOSFET bsolute Maximum Ratings T J =5 unless otherwise specified Symbol Parameter alue Unit DSS DrainSource oltage 700 GS GateSource oltage ±0 I D ) Drain Current Continuous (T C = 5 ) Drain Current Continuous (T C = 00 ) 5.0 * 3. * I DM ) Drain Current Pulsed 8.4 * E S 3) Single Pulsed valanche Energy 43 mj I R valanche Current dv/dt MOSFET dv/dt ruggedness, DS = /ns dv/dt Reverse diode dv/dt, DS =0 560, I DS I D 5 /ns P D Power Dissipation (T C = 5 ) 0 W ESD(GS) T J, T STG Gate source ESD(HBMC=00pF, R=.5KΩ) 500 Operating and Storage Temperature Range 55 to +50 * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol Parameter Typ. Max. Unit R θjc JunctiontoCase 6.3 /W R θj Junctiontombient 6.5 /W RE.0, March 08

2 Electrical Characteristics T J =5 unless otherwise specified Symbol Parameter Test Conditions Min. Typ. Max. Unit On Characteristics GS R DS(ON) Off Characteristics B DSS I DSS I GSS C rss Gate Threshold oltage Static DrainSource OnResistance DrainSource Breakdown oltage Zero Gate oltage Drain Current GateBody Leakage Current Dynamic Characteristics C iss C oss Input Capacitance Output Capacitance Reverse Transfer Capacitance DS = GS, I D = 60 μ GS = 0, I D =. GS = 0, I D = 50 μ DS = 700, GS = 0, T C = 5 DS = 700, GS = 0, T C = 50 GS = ±0, DS = 0 DS = 00, GS = 0, f =.0 MHz μ ± 45.7 Ω μ μ pf pf pf HCS70RK6 Super Junction MOSFET Switching Characteristics t d(on) t r t d(off) t f TurnOn Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time DS = 350, I D =.5, R G = 5 Ω (Note 4,5) 0 ns 8 50 ns ns 0 ns Q g Q gs Q gd Total Gate Charge GateSource Charge GateDrain Charge DS = 560, I D =.5, GS = 0 (Note 4,5) 5.5 nc. nc. nc DrainSource Diode Characteristics and Maximum Ratings I S Maximum Continuous DrainSource Diode Forward Current 5.0 I SM Maximum Pulsed DrainSource Diode Forward Current 8.4 SD DrainSource Diode Forward oltage GS = 0, I S = trr Reverse Recovery Time GS = 0, I S =.5 35 Qrr Reverse Recovery Charge di F /dt = 00 /μs 0.6 ns μc Notes :. Limited by Tj max. Maximum duty cycle D=0.50. Repetitive Rating : Pulse width limited by maximum junction temperature 3. I S =, DD =50, R G =5Ω, Starting T J =5 4. Pulse Test : Pulse Width 300μs, Duty Cycle % 5. Essentially Independent of Operating Temperature RE.0, March 08

3 Typical Characteristics Figure. I D, Drain Current [] Figure 3. On Region Characteristics DS, DrainSource oltage [] On Resistance ariation vs. Drain Current and Gate oltage Figure I D, Drain Current [] Figure 4. Transfer Characteristics GS, GateSource oltage []. DS = us Pulse Test Body Diode Forward oltage ariation with Source Current and Temperature HCS70RK6 Super Junction MOSFET 3.0 E+0 E+0.5 E+00 R DS(ON) [Ω].0 I F [] E0 E E I D []. GS = 0. T J = 5 E04 E SD []. GS = us Pulse Test Figure 4. Capacitance Characteristics Figure 5. Gate Charge Characteristics 0000 Capacitances [pf] Ciss Coss Crss GS [] DS DrainSource oltage []. GS = 0. f = MHz Q G [nc]. I D =.5 RE.0, March 08

4 Typical Characteristics Figure 7. Breakdown oltage ariation vs. Temperature Figure 8. OnResistance ariation vs. Temperature B DSS (Normalized) Figure T J [ ]. GS = 0. I D = 50 u Maximum Safe Operating rea Figure 0. Maximum Drain Current vs. Temperature R DS(on) (Normalized) T J [ ]. GS = 0. I D =. HCS70RK6 Super Junction MOSFET 0 4 0us I D [] 0. 00us ms 0ms DC I D [] T C = 5. T J(MX) = Single Pulse DS [] T C [ ] Figure 0. Transient Thermal Response Curve Z θjc [K/W] single pulse 0. E t P [S] RE.0, March 08

5 00nF 3m 50KΩ GS Figure. Gate Charge Test Circuit & Waveform 300nF Same Type as DS GS 0 Q gs Figure 3. Resistive Switching Test Circuit & Waveforms Q g Q gd Charge HCS70RK6 Super Junction MOSFET DS R L DS 90% R G DD ( 0.5 rated DS ) 0 0% in t d(on) t r t d(off) tf t on t off Figure 4. Unclamped Inductive Switching Test Circuit & Waveforms DS L E S = L I S B DSS B DSS DD I D DD B DSS I S R G I D (t) 0 DD DS (t) t p Time RE.0, March 08

6 Figure 5. Peak Diode Recovery dv/dt Test Circuit & Waveforms R G I F Driver + DS _ Same Type as L DD HCS70RK6 Super Junction MOSFET GS dv/dt controlled by RG I F controlled by pulse period GS ( Driver ) D = Gate Pulse Width Gate Pulse Period 0 I FM, Body Diode Forward Current I F ( ) di F /dt t F t rr t S I RM 0% I RM Body Diode Reverse Current DS ( ) Body Diode Recovery dv/dt f DD Body Diode Forward oltage Drop RE.0, March 08

7 Package Dimension TO0F Pin hole HCS70RK6 Super Junction MOSFET TO0FFM(Full Mold) RE.0, March 08