Characteristic Value Units

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1 dvanced Power MOSFET SSW/IN60 FETURES valanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating rea Lower Leakage Current : 25 µ DS = 600 Low R DS(ON) : Ω (Typ.) B DSS = 600 R DS(on) = 2 Ω I D = D 2 -PK I 2 -PK 2 bsolute Maximum Ratings Symbol DSS I D I DM E S I R E R dv/dt P D T J, T STG T L Thermal Resistance Symbol R θ JC R J Drain-to-Source oltage Continuous Drain Current (T C =25 ) Continuous Drain Current (T C =00 ) Drain Current-Pulsed Gate-to-Source oltage Single Pulsed valanche Energy valanche Current Repetitive valanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T =25 )* Total Power Dissipation (T C =25 ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, /8 from case for 5-seconds Characteristic Typ. Max. Units Junction-to-Case. Gate 2. Drain 3. Source Characteristic alue Units θ Junction-to-mbient * 40 /W R θ J Junction-to-mbient 62.5 * When mounted on the minimum pad size recommended (PCB Mount). O O 2 O O O _ to mj mj /ns W W W/ Rev. B 999 Fairchild Semiconductor Corporation

2 SSW/IN60 N-CHNNEL Electrical Characteristics (T C =25 unless otherwise specified) Symbol Characteristic Min. Typ. Max. Units B DSS B/ T J Drain-Source Breakdown oltage Breakdown oltage Temp. Coeff / C (th) I GSS I DSS R DS(on) g fs C iss C oss C rss t d(on) t r t d(off) t f Q g Q gs Q gd Gate Threshold oltage Gate-Source Leakage, Forward Gate-Source Leakage, Reverse 2.0 Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance 0.83 Input Capacitance 45 Output Capacitance 20 Reverse Transfer Capacitance 7 Turn-On Delay Time 0 Rise Time 3 Turn-Off Delay Time 28 Fall Time 3 Total Gate Charge 7.5 Gate-Source Charge.2 Gate-Drain ( Miller ) Charge n µ Ω Ω pf ns nc Test Condition =0,I D =250 µ I D =250 µ See Fig 7 DS =5,I D =250 µ =30 =-30 DS =600 DS =480,T C =25 =0,I D =0.5 O 4 DS =50,I D =0.5 O 4 =0, DS =25,f =MHz See Fig 5 =300,I D =, R G =24 Ω See Fig 3 O 4 O5 DS =480, =0, I D = O See Fig 6 & Fig 2 4 O5 Source-Drain Diode Ratings and Characteristics Symbol I S I SM SD t rr Q rr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward oltage Reverse Recovery Time Reverse Recovery Charge O O 4 Min. Typ Max. Units Test Condition Integral reverse pn-diode 3 in the MOSFET.2 ns µ C T J =25 C,I S =, =0 T J =25 C,I F = di F /dt=00/ µ s O 4 Notes ; O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 L=80mH, I S =, =50, R G =27 Ω, Starting T J =25 O 3 I SD <_, di/dt <_ 60/ µ s, <_ B DSS, Starting T J =25 O 4 Pulse Test : Pulse Width = 250 µ s, Duty Cycle <_ 2% O5 Essentially Independent of Operating Temperature

3 N-CHNNEL SSW/IN60 Fig. Output Characteristics Fig 2. Transfer Characteristics Top : Bottom : µs Pulse Test 2. T C = DS, Drain-Source oltage [] = 0 2. DS = µs Pulse Test , Gate-Source oltage [] R DS(on), [Ω] Drain-Source On-Resistance Fig 3. On-Resistance vs. Drain Current = 0 = Note : T J = I DR, Reverse Drain Current [] 0 0 Fig 4. Source-Drain Diode Forward oltage = µs Pulse Test SD, Source-Drain oltage [] Capacitance [pf] Fig 5. Capacitance vs. Drain-Source oltage 250 C iss = C gs + C gd (C ds = shorted ) C oss = C ds + C gd 200 C rss = C gd C iss C oss C rss DS, Drain-Source oltage []. = 0 2. f = MHz, Gate-Source oltage [] 0 5 Fig 6. Gate Charge vs. Gate-Source oltage DS = 20 DS = 300 DS = 480 I D = Q G, Total Gate Charge [nc]

4 SSW/IN60 N-CHNNEL B DSS, (Normalized) Drain-Source Breakdown oltage Fig 7. Breakdown oltage vs. Temperature. = 0 2. I D = 250 µ R DS(on), (Normalized) Drain-Source On-Resistance Fig 8. On-Resistance vs. Temperature. = 0 2. I D = T J, Junction Temperature [ ] T J, Junction Temperature [ ] Fig 9. Max. Safe Operating rea Operation in This rea is Limited by R DS(on). T C = T J = 50 0 ms DC ms 00 µs 3. Single Pulse DS, Drain-Source oltage [] Fig 0. Max. Drain Current vs. Case Temperature T c, Case Temperature [ ] Fig. Thermal Response Z θjc (t), Thermal Response 0 0 D= single pulse. Z θjc (t)=3.67 /W Max. 2. Duty Factor, D=t /t 2 3. T JM -T C =P DM *Z θjc (t) P DM t t t, Square Wave Pulse Duration [sec]

5 N-CHNNEL SSW/IN60 Fig 2. Gate Charge Test Circuit & Waveform 2 Current Regulator 50KΩ 200nF 300nF Same Type as 0 Q g DS Q gs Q gd 3m R R 2 Current Sampling (I G ) Resistor Current Sampling (I D ) Resistor Charge Fig 3. Resistive Switching Test Circuit & Waveforms R L in out ( 0.5 rated DS ) out 90% R G 0 in 0% t d(on) t r t d(off) tf t on t off Fig 4. Unclamped Inductive Switching Test Circuit & Waveforms DS L L E S = L L I 2 2 S B DSS B DSS ary t p to obtain required peak I D ID B DSS I S R G C I D (t) 0 DS (t) t p t p Time

6 SSW/IN60 N-CHNNEL Fig 5. Peak Diode Recovery dv/dt Test Circuit & Waveforms + DS I S L Driver RG Same Type as dv/dt controlled by R G I S controlled by Duty Factor D ( Driver ) Gate Pulse Width D = Gate Pulse Period 0 I FM, Body Diode Forward Current I S ( ) di/dt I RM Body Diode Reverse Current DS ( ) Body Diode Recovery dv/dt f Body Diode Forward oltage Drop

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Characteristic Value Units

Characteristic Value Units dvanced Power MOSFET IRF630 FETURES valanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating rea Lower Leakage Current : 10 µ (Max.)