G D S. Drain-Source Voltage 30. V Gate-Source Voltage

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1 M4N3P N-CHANNEL ENHANCEMENT-MOE POWER MOFET Low gate charge B 3V imple drive requirement R (ON) 7mΩ Fast switching I 4A escription TO-22 Power MOFETs from ilicon tandard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-22 package is widely preferred for commercial and industrial applications and suited for low voltage applications such as C/C converters and high efficiency switching circuits. Absolute Maximum Ratings ymbol Parameter Rating Units T C =25 C T C = C rain-ource Voltage 3 V ate-ource Voltage ± 2 V Continuous rain V 4 A Continuous rain V 3 A I M T C =25 C T T T J Pulsed rain Current 69 A Total Power issipation 5 W Linear erating Factor.4 W/ C torage Temperature Range -55 to 5 C Operating Junction Temperature Range -55 to 5 C Thermal ata ymbol Parameter Value Unit Rthj-c Thermal Resistance Junction-case Max. 2.5 C/W Rthj-a Thermal Resistance Junction-ambient Max. 62 C/W of 6

2 Electrical T j =25 o C (unless otherwise specified) M4N3P ymbol Parameter Test Conditions Min. Typ. Max. Units B rain-ource Breakdown Voltage =V, I =25uA V B / Tj Breakdown Voltage Temperature Coefficient Reference to 25 C, I=mA V/ C R (ON) tatic rain-ource On-Resistance =V, I =2A mω =4.5V, I =6A mω (th) ate Threshold Voltage =, I =25uA - 3 V g fs Forward Transconductance =V, I =2A I rain-ource Leakage Current (T j =25 o C) =3V, =V - - ua rain-ource Leakage Current (T j =5 o C) =24V, =V ua I ate-ource Leakage = ± 2V - - ± na Q g Total ate Charge 2 I =2A nc Q gs ate-ource Charge =24V nc Q gd ate-rain ("Miller") Charge =5V - - nc t d(on) Turn-on elay Time 2 =5V ns t r Rise Time I =2A ns t d(off) Turn-off elay Time R =3.3Ω, =V ns t f Fall Time R =.75Ω - - ns C iss Input Capacitance =V pf C oss Output Capacitance =25V pf C rss Reverse Transfer Capacitance f=.mhz pf ource-rain iode ymbol Parameter Test Conditions Min. Typ. Max. Units I Continuous ource Current ( Body iode ) V =V =V, V =.3V A I M Pulsed ource Current ( Body iode ) A V Forward On Voltage 2 T j =25 C, I =4A, =V V Notes:.Pulse width limited by safe operating area. 2.Pulse width <3us, duty cycle <2%. 2 of 6

3 M4N3P 5 T C =25 o C V =V T C =5 o C V =V 5 V =8.V V =8.V I, rain Current (A) 5 V =6.V V =4.V I, rain Current (A) 5 V =6.V V =4.V V =3.V V =3.V , rain-to-ource Voltage (V) , rain-to-ource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I =2A T C =25 o C.6 I =2A V =V 24 R ON (mω) Normalized R (ON) (V) T j, Junction Temperature ( o C) Fig 3. On-Resistance v.s. ate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 3 of 6

4 M4N3P I, rain Current (A) P (W) T c, Case Temperature ( o C) 5 5 T c,case Temperature ( o C) Fig 5. Maximum rain Current vs. Case Temperature Fig 6. Typical Power issipation I (A) T c =25 o C ingle Pulse (V) us us ms ms ms Normalized Thermal Response (R thjc ).. UTY= INLE PULE..... t, Pulse Width (s) P M t T uty factor = t/t Peak T j = P M x R thjc + T C Fig 7. Maximum afe Operating Area Fig 8. Effective Transient Thermal Impedance 4 of 6

5 M4N3P 6 f=.mhz 4 Id=2A V =6V, ate to ource Voltage (V) V =2V V =24V C (pf) Ciss Coss 2 Crss Q, Total ate Charge (nc) (V) Fig 9. ate Charge Characteristics Fig. Typical Capacitance Characteristics 3 T j = 5 o C T j = 25 o C 2 I (A) (th) (V) V (V) T j, Junction Temperature ( o C ) Fig. Forward Characteristic of Reverse iode Fig 2. ate Threshold Voltage vs. Junction Temperature 5 of 6

6 M4N3P R 9% TO THE OCILLOCOPE R.5x RATE % + - V t d(on) t r t d(off) t f Fig 3. witching Time Circuit Fig 4. witching Time Waveform V TO THE OCILLOCOPE 5V Q.8 x RATE Q Q + - ~ 3 ma I I Charge Q Fig 5. ate Charge Circuit Fig 6. ate Charge Waveform Information furnished by ilicon tandard Corporation is believed to be accurate and reliable. However, ilicon tandard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. ilicon tandard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of ilicon tandard Corporation or any third parties. 6 of 6