N-Channel Enhancement Mode Field Effect Transistor Amp 60Volt. Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS 1MΩ) VDGR 60 V VGSS
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1 E L E C T R O N I C N7PT N-Channel Enhancement Mode Field Effect Transistor - Amp 6Volt Application -ervomotor control -Power MOFET gate drivers -Other switching applications OT- Feature -mall surface mounting type -High density cell design for low R(ON) -uitable for high packing density -Rugged and reliable -High saturation current capability -Voltage controlled small signal switch.9(.4).(.8).8(.).66(.7).4(.).(.88).9().8(.) Construction -N-Channel Enhancement Circuit.(.4).47(.8).(.64).86(.).8(.7).() G.4(.).(.8).7(.77).(.) Absolute Maximum Ratings PARAMETER YMBOL N7PT UNIT rain-ource Voltage V 6 V rain-gate Voltage (RG MΩ) VGR 6 V Gate-ource Voltage - Continuous - Non Repetitive (tp<μs) VG ± ± 4 V Maximum rain Current - Continuos - Pulsed TA = 7ºC TA = ºC I 9 ma Maximum Power issipation TA = ºC TA = 7ºC P mw Operting and torage Temperature Range TJ, TTG - to + mw Maximum Lead Temperature for oldering Purposes, /6 from Case for econds TL ºC Thermal Resistance, Junction-to-Ambient R 7 ºC/W eptember 6 / Rev.
2 N7PT Electrical Characteristics PARAMETER YMBOL CONITION MIN. TYP. MAX. UNIT OFF CHARACTERITIC rain-ource Breakdown Voltage BV VG = V, I = μa 6 7 V Zero Gate Voltage rain Current I V = 6V, VG = V μa Gate-Body Leakage, Forward IGF VG = V, V = V na Gate-Body Leakage, Reverse IGR VG = -V, V = V - na ON CHARACTERITIC (Note ) Gate Threshold Voltage VG(th) V = VG, I = μa... V tstic rain-ource On-Resistance R(ON) VG = V, I = ma.7. VG = 4V, I = ma. 4. Ω rain-ource On-Voltage V(ON) VG = V, I = ma.6.7 VG = V, I = ma.9. V On-tate rain Current I(ON) VG = V, V = 7.V(ON) 8 8 VG = 4.V, V = V(ON) 7 ma Forward Transconductance gf V = V(ON), I = ma m YNAMIC CHARACTERITIC Total Gate Charge Qg.6. V = V, VG = V, Gate-ource Charge Qgs.6 I = ma Gate-rain Charge Qgd.6 Input Capacitance Ciss V = V, VG = V, Output Capacitance Coss 6 f =.MHz Reverse Transfer Capacitance Crss. ton V = V, RL = Ω, 7. Turn-On Time I = ma, VG = V, tr RGEN = Ω 6 toff V = V, RL = Ω, 7. Turn-Off Times I = ma, VG = V, tf RGEN = Ω nc pf n n RAIN-OURCE IOE CHARACTERITIC AN MAXIMUM RATING Maximum Continuous rain-ource I ma iode Forward Current Maximum Pulsed rain-ource iode Forward Current IM.8 A rain-ource iode Forward Voltage V VG = V, I = ma.8. V Note:..Pulse test : Pulse Width < μs, uty Cycle <.%
3 RATING CHARACTERITIC CURVE ( N7PT ) Typical Electrical Characteristics I, RAIN-OURCE CURRENT (A) Figure. On-Region Characteristics. V G = V V, RAIN-OURCE VOLTAGE (V) R (on), NORMALIZE RAIN-OURCE ON-REITANCE 6 4 Figure. On-Resistance Variation with Gate Voltage and rain Current V G =4.V I, RAIN CURRENT (A) Figure. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with rain Current and Temperature R (ON), NORMALIZE RAIN-OURCE ON-REITANCE V G = V I = ma R (on), NORMALIZE RAIN-OURCE ON-REITANCE 6 4 V G = V T J = C C - C I, RAIN CURRENT (A) I, RAIN CURRENT (A) Figure. Transfer Characteristics V = V T J = - C C C V G, GATE TO OURCE VOLTAGE (V) V th, NORMALIZE GATE-OURCE THREHOL VOLTAGE Figure 6. Gate Threshold Variation with Temperature V = VG I = ma
4 RATING CHARACTERITIC CURVE ( N7PT ) Typical Electrical Characteristics (continued) BV, NORMALIZE RAIN-OURCE BREAKOWN VOLTAGE Figure 7. Breakdown Voltage Variation with Temperature I = µa I, REVERE RAIN CURRENT (A).... Figure 8. Body iode Forward Voltage Variation with rain Current V G = V T = C J C - C V, BOY IOE FORWAR VOLTAGE (V) Figure 9. Capacitance Characteristics Figure. Gate Charge Characteristics CAPACITANCE (pf) 6 4 f = MHz V G = V C iss C oss C rss V, RAIN TO OURCE VOLTAGE (V) V G, GATE-OURCE VOLTAGE (V). V = V I =ma....4 Q g, GATE CHARGE (nc) Figure. Figure. witching Waveforms V t on t off t d(on) tr t d(off) t f VIN R L 9% 9% VOUT Output, Vout % % V G R GEN G UT Input, Vin % % 9% Inverted % Pulse Width
5 RATING CHARACTERITIC CURVE ( N7PT ) Typical Electrical Characteristics (continued) I, RAIN CURRENT (A)... R(ON) Limit V G = V INGLE PULE T A = C Figure. N7PT Maximum afe Operating Area. 6 8 V, RAIN-OURCE VOLTAGE (V) s s C ms ms ms us r(t), NORMALIZE EFFECTIVE TRANIENT THERMAL REITANCE..... =..... ingle Pulse Figure 4. N7PT Transient Thermal Response Curve R (t) = r(t) * R R = (ee atasheet) T J - T A = P * R (t) uty Cycle, = t /t..... t, TIME (sec) P(pk) t t
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M25N3Q-HF N-hannel RoH evice Halogen Free Features - ingle rive Requirement..2(5.).5(4.7).(.25).7(.7) - Low On-resistance. - Fast witching haracteristic. - ynamic dv/dt rating..57(4.).5(3.).244(6.2).22(5.)
More informationI D (at V GS =10V) R DS(ON) (at V GS =10V) < 1.3Ω. 100% UIS Tested! 100% R g Tested!
AO7N6/AOI7N6 6V,7A NChannel MOFET eneral escription The AO7N6 & AOI7N6 have been fabricated using an advanced high voltage MOFET process that is designed to deliver high levels of performance and robustness
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Features Product ummary Ultra Low Qg & Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoH Compliant G 3 G 5 7 V 5 V Q g 9. nc Q gd.5 nc R (on) =.5V. mω =V 3. mω V th. V Halogen Free
More informationN-Channel CICLON NexFET Power MOSFETs CSD16410Q5A
C4QA Features Product ummary Ultra Low Qg & Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoH Compliant G 2 3 G 4 7 V 2 V Q g 3.9 nc Q gd. nc R (on) =4.V 9. mω =V. mω V th.9 V Halogen
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6 NChannel AlphaGT TM General escription Trench Power AlphaGT TM technology Low R (ON) Low Gate Charge E protected Product ummary 6 I (at G =) 3.5A R (ON) (at G =) < 9.8mΩ R (ON) (at G =4.5) < 3.5mΩ Typical
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.56Ω. DFN 3x3A_EP Top View. Top View
25V,5A NChannel MOFET General escription The AON7458 is fabricated using an advanced high voltage MOFET process that is designed to deliver high levels of performance and robustness in popular ACC applications.by
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AO47 PChannel Enhancement Mode Field Effect Transistor General escription The AO47 uses advanced trench technology to provide excellent R S(ON), low gate charge and low gate resistance. With the excellent
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reen Product T3 amhop icroelectronics C orp. N-Channel Enhancement ode Field Effect Traistor PRODUCT UARY D ID RD(ON) (mω) ax 5 @ = 3 A @ =.5 75 @ =2.5 FEATURE uper high dee cell design for low RD(ON).
More informationP-Channel MOSFET SI2369DS-HF (KI2369DS-HF) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 *1*2 *1*2 *1*2 *1*2
Features VDS (V) =-3V ID =-7.6A (VGS =±V) RDS(ON) < 9mΩ (VGS =-V) RDS(ON) < 34mΩ (VGS =-6V) RDS(ON) < 4mΩ (VGS =-4.5V).8 -. +. SOT-3-3 3.9 -. +..4 -. +..95 -. +..9 -. +. +. -..6.4.55 Unit: mm.5 -. +. -..68
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P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.) - 3.65 at V G = - V - 35 nc 8 7 6 PowerPAK O-8 5 6.5 mm 5.5 mm Bottom View 3 G 4 Ordering Information: i7447ap-t-e3 (Lead (Pb)-free)
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P-Channel SOT-.9 -.. -. Unit: mm Features VDS (V) =-V ID =-5. A (VGS =-.5V) RDS(ON) < mω (VGS =-.5V) RDS(ON) < mω (VGS =-.5V). -..95 -..9 -.. -..55.. -. +.5 RDS(ON) < 59mΩ (VGS =-.V) Pb Free Package May
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2V PChannel MOSFET General escription The AO649A uses advanced trench technology to provide excellent R S(ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for
More informationV T j,max I DM. 100% UIS Tested 100% R g Tested TO251. Top View. Bottom View D G AOU7S60
V 7A α MO TM Power Transistor eneral escription The AO7 & AOU7 have been fabricated using the advanced αmo TM high voltage process that is designed to deliver high levels of performance and robustness
More informationFeatures. 175 C maximum junction temperature rating. TO-263AB FDB Series. TA=25 o C unless otherwise noted
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N-Channel IRLML (KRLML) SOT-2 2.9 -. +..4 -. +. Unit: mm Features VDS (V) = V ID =.6A (VGS = V) RDS(ON) < 22mΩ (VGS = V) RDS(ON) < 25mΩ (VGS = 4.5V) G 2.4 -. +. 2.95 -. +..9 -. +.. -. +. 5.4. -. +.5 S
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6V,.5A NChannel MOFET eneral escription The AO3N6 & AOU3N6 have been fabricated using an advanced high voltage MOFET process that is designed to deliver high levels of performance and robustness in popular
More informationSymbol. Maximum Drain-Source Voltage 600 Gate-Source Voltage Continuous Drain Current A,F Pulsed Drain Current B Peak diode recovery dv/dt V DS V GS
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Main Product Characteristics D2 S1 V (BR)DSS 30V -30V D1 58mΩ@10V 100mΩ@-10V G2 R DS(on)MAX 95mΩ@4.5V 150mΩ@-4.5V G1 S2 I D 3.5A -2.7A SOT-23-6L Schematic Diagram Features and Benefits Advanced MOSFET
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