STS3414. N-Channel Enhancement Mode Field Effect Transistor

Transcription

1 reen Product T3 amhop icroelectronics C orp. N-Channel Enhancement ode Field Effect Traistor PRODUCT UARY D ID RD(ON) (mω) ax = 3 =.5 =2.5 FEATURE uper high dee cell design for low RD(ON). Rugged and reliable. OT-23 package. OT-23 D D ABOLUTE AXIU RATIN (T A =25 C unless otherwise noted) ymbol D I D I D P D T J, T T Parameter Drain-ource oltage ate-ource oltage Drain Current-Continuous a -Pulsed b aximum Power Dissipation a Operating Junction and torage Temperature Range T A=25 C T A =25 C Limit 3 ± to 5 Units A 5 A W C THERAL CHARACTERITIC R JA Thermal Resistance, Junction-to-Ambient a C/W Details are subject to change without notice.

2 ELECTRICAL CHARACTERITIC (TA=25 C unless otherwise noted) ymbol Parameter Conditio in Typ ax Units OFF CHARACTERITIC BD Drain-ource Breakdown oltage =, ID=25uA 3 ID Zero ate oltage Drain Current D=2, = ua I ate-body Leakage Current = ±2, D= ± na ON CHARACTERITIC (th) ate Threshold oltage D=, ID=25uA RD(ON) g F Forward Traconductance D=5., ID=A 3 DYNAIC CHARACTERITIC CI Input Capacitance pf D=5,= CO Output Capacitance 2 pf f=.hz CR Reverse Trafer Capacitance 37 pf WITCHIN CHARACTERITIC td(on) tr td(off) tf Qg Qgs Qgd Drain-ource On-tate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total ate Charge ate-ource Charge ate-drain Charge c c =.5, ID=3A 5 m ohm DD=5 ID=A = REN= ohm D=5,ID=A,= 9.3 nc D=5,ID=A,=.5. nc D=5,ID=A, = DRAIN-OURCE DIODE CHARACTERITIC AND AXIU RATIN I aximum Continuous Drain-ource Diode Forward Current.25 A b D Diode Forward oltage =,I=.25A.82.2 Notes a.urface ounted on FR Board,t < _ sec. b.pulse Test:Pulse Width < _ 3us, Duty Cycle < _ 2%. c.uaranteed by design, not subject to production testing. =, ID=A 37 5 m ohm =2.5, ID=A m ohm nc nc 2

3 ID, Drain Current(A) =3.5 = =3 =2.5 =2 ID, Drain Current(A) Tj=25 C 25 C -55 C D, Drain-to-ource oltage() Figure. Output Characteristics , ate-to-ource oltage() Figure 2. Trafer Characteristics 2.75 RD(on)(m Ω) 8 2 =.5 = RD(on), On-Resistance Normalized =.5 ID=3A = ID=A Tj( C ) ID, Drain Current(A) Tj, Junction Temperature( C ) Figure 3. On-Resistance vs. Drain Current Figure. On-Resistance ariation with Drain and ate oltage Current and Temperature th, Normalized ate-ource Threshold oltage D= ID=25uA BD, Normalized Drain-ource Breakdown oltage ID=25uA Tj, Junction Temperature( C ) Figure 5. ate Threshold ariation with Temperature Tj, Junction Temperature( C ) Figure. Breakdown oltage ariation with Temperature 3

4 RD(on)(m Ω) C 75 C 25 C ID=A Is, ource-drain current(a) 2 25 C 25 C 75 C 2 8, ate-to-ource oltage() Figure 7. On-Resistance vs. ate-ource oltage D, Body Diode Forward oltage() Figure 8. Body Diode Forward oltage ariation with ource Current C, Capacitance(pF) 5 Ciss 3 2 Coss Crss , ate to ource oltage() 8 2 D=5 ID=A D, Drain-to-ource oltage() Qg, Total ate Charge(nC) Figure 9. Capacitance Figure. ate Charge 5 witching Time() TD(off ) Tr Tf TD(on) D =5,ID=A = ID, Drain Current(A) R D (O N) Limit DC ms ms. = ingle Pulse T A=25 C. 3 ms us Rg, ate Resistance(Ω) Figure. switching characteristics D, Drain-ource oltage() Figure 2. aximum afe Operating Area

5 R EN IN DD R L D OUT td(on) OUT IN % ton toff tr td(off) 9% 9% % INE R TE D % 9% 5% 5% tf PULE WIDTH Figure 3. witching Test Circuit Figure. witching Waveforms Normalized Traient Thermal Resistance.5.2 P D.. t.5 t2.2. R thj A (t)=r (t) * R thja 2. R thja= ee Datasheet. 3. T J-TA = P D* R thja (t) ingle Pulse. Duty Cycle, D=t/t quare Wave Pulse Duration(sec) Normalized Thermal Traient Impedance Curve 5

6 PACKAE OUTLINE DIENION OT 23 A L F J B C I H E D (TYP.) F I J L

7 OT-23 Tape and Reel Data OT-23 Carrier Tape TR FEED DIRECTION UNIT: PACKAE OT-23 A B K D D E E E2 P P P2 T OT-23 Reel W N K R H W UNIT: TAPE IZE REEL IZE N W W H K R