M C C. SI2302A. Features. N-Channel Enhancement Mode Field Effect Transistor SOT-23. Internal Block Diagram
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1 omponents 73 Marilla treet Chatsworth!"# $%!"# I3A Features Halogen free available upon request by adding suffix "-HF",3.A, (ON) G =.5 (ON) G =.5 High dee cell design for extremely low (ON) ugged and reliable Lead free product is acquired OT-3 Package Epoxy meets UL 9 - flammability rating Moisture eitivity Level Maximum 5 O C Unless Otherwise pecified ymbol Parameter ating Unit rain-source oltage I rain Current-Continuous 3 A I M rain Current-Pulsed a A G Gate-source oltage ±8 P Total Power issipation.5 W JA Thermal esistance Junction to Ambient b /W T J Operating Junction Temperature -55 to +5 T TG torage Temperature -55 to +5 N-Channel Enhancement Mode Field Effect Traistor F 3 A E OT-3 G H J C B.GATE. OUCE 3. AIN K IMENION Internal Block iagram G INCHE MM IM MIN MAX MIN MAX NOTE A B C E F G H J K uggested older Pad Layout inches mm of 5
2 Electrical Characteristics T A = 5 C unless otherwise noted Parameter ymbol Test Condition Min Typ Max Units Off Characteristics rain-ource Breakdown oltage Zero Gate oltage rain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, everse On Characteristics c Gate Threshold oltage tatic rain-ource On-esistance Forwand Traconductance ynamic Characteristics d Input Capacitance Output Capacitance everse Trafer Capacitance witching Characteristics d B I I GF IG G(th) (on) G =,I =µa =, G = G = 8, = G = -8, = Turn-On elay Time t d(on) Turn-On ise Time t =, I = 3.A, r G =.5, GEN =Ω Turn-Off elay Time t d(off) Turn-On Fall Time t f Total Gate Charge Q g Gate-ource Charge Q =, I = 3.A, gs G =.5 Gate-rain Charge Q gd rain-ource iode Characteristics and Maximun atings rain-ource iode Forward Current b rain-ource iode Forward oltage c I G =,I =.9A g F C iss C oss C rss Notes : a.epetitive ating : Pulse width limited by maximum junction temperature. b.urface Mounted on F Board, t<sec. c.pulse Test : Pulse Width < 3µs, uty Cycle < %. d.guaranteed by design, not subject to production testing. G =,I =5µA G =.5, I = 3.A G =.5, I = 3.A =5,I = 3.A =, G =, f =. MHz - µa na na mω 8 mω A of 5
3 Electrical and Thermal Characteristics G =.5,3.5,.5 5 C 8 G =. G =.5 8 T J =5 C -55 C 5 3 3, rain-to-ource oltage () G, Gate-to-ource oltage () Figure. Output Characteristics Figure. Trafer Characteristics C, Capacitance () 5 3 C iss C oss C rss (ON), Normalized (ON), On-esistance(Ohms) I =3.A G = , rain-to-ource oltage () TJ, Junction Temperature( C) Figure 3. Capacitance Figure. On-esistance ariation with Temperature TH, Normalized Gate-ource Threshold oltage = G I =5µA I, ource-drain current (A) G = TJ, Junction Temperature( C), Body iode Forward oltage () Figure 5. Gate Threshold ariation with Temperature Figure. Body iode Forward oltage ariation with ource Current 3 of 5
4 Electrical and Thermal Characteristics G, Gate to ource oltage () 5 3 = I =3.A - - (ON) Limit T A =5 C T J =5 C ingle Pulse ms ms ms s C - Qg, Total Gate Charge (), rain-ource oltage () Figure 7. Gate Charge Figure 8. Maximum afe Operating Area G GEN IN G L OUT td(on) OUT ton toff tr td(off) 9% 9% % INETE % tf IN % 9% 5% 5% PULE WITH Figure 9. witching Test Circuit Figure. witching Waveforms r(t),normalized Effective Traient Thermal Impedance - = ingle Pulse PM t t. JA (t)=r (t) * JA. JA=ee atasheet 3. TJM-TA =P* JA (t). uty Cycle, =t/t quare Wave Pulse uration (sec) Figure. Normalized Thermal Traient Impedance Curve of 5
5 Ordering Information : evice Part Number-TP Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF Packing Tape&eel: 3Kpcs/eel ***IMPOTANT NOTICE*** Corp. reserves the right to make changes without further notice to any product herein to make correctio, modificatio, enhancements, improvements, or other changes. Corp. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any licee under its patent rights,nor the rights of others. The user of products in such applicatio shall assume all risks of such use and will agree to hold Corp. and all the companies whose products are represented on our website, harmless agait all damages. ***LIFE UPPOT*** MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Corporation. ***CUTOME AWAENE*** Counterfeiting of semiconductor parts is a growing problem in the industry. (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC istributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC istributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized ources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 5 of 5
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omponents 2736 Marilla Street Chatsworth!"# $%!"# SMBJAHE3 THU SMBJ78CAHE3 Features For surface mount applicationsin order to optimize board space Lead Free Finish/ohs Compliant (Note) ("P"Suffix designates
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SM Type IRF743 (KRF743) SOP- Features VS (V) = 3V I = A (VGS = V) RS(ON) < mω (VGS = V).5.5 S S S G 7 3 4 5. +.4 -. Source Source 3 Source 4 Gate 5 rain rain 7 rain rain Top View Absolute Maximum Ratings
More informationFeatures. Bottom View
YM AVANCE INFORMATION 3V N-CHANNEL ENHANCEMENT MOE MOSFET Product Summary V (BR)SS 3V escription R S(ON) max I max T A = +25 C 17mΩ @ V GS = 1V 8.4A 28mΩ @ V GS = 4.5V 6.8A This new generation MOSFET is
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3V PChannel MOFET eneral escription The AO741 uses advanced trench technology to provide excellent R (ON), low gate charge, and operation with gate voltages as low as.5v, in the small OT33 footprint. It
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V NChannel MOFET eneral escription The AO34 uses advanced trench technology to provide excellent R (ON), low gate charge and operation with gate voltages as low as.8v while retaining a 2V V (MAX) rating.
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