CEM4501 FEATURES. ABSOLUTE MAXIMUM RATINGS T A = 25 C unless otherwise noted. Thermal Characteristics

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1 Dual Enhancement Mode Field Effect Traistor (N and P Channel) FETURES, 8.3, R DS(ON) = GS =.. R DS(ON) = GS = 2.. -, -., R DS(ON) = GS = -.. R DS(ON) = GS = -2.. Super high dee cell design for extremely low R DS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D D D2 D SO S G S2 G2 BSOLUTE MXIMUM RTINGS T = 2 C unless otherwise noted Parameter Symbol N-Channel P-Channel Units Drain-Source oltage Gate-Source oltage Drain Current-Continuous Drain Current-Pulsed a DS GS I D I DM ± ±2 - - Maximum Power Dissipation P D 2. W Operating and Store Temperature Range TJ,Tstg - to C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-mbient b RθJ 62. C/W.March - 6

2 N-Channel Electrical Characteristics T = 2 C unless otherwise noted Off Characteristics Parameter Symbol Test Condition Min Typ Max Units Drain-Source Breakdown oltage Zero Gate oltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold oltage Static Drain-Source On-Resistance Forwand Traconductance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Trafer Capacitance Switching Characteristics d B DSS I DSS I GSSF IGSSR Turn-On Delay Time t d(on) Turn-On Rise Time t r Turn-Off Delay Time t d(off) Turn-On Fall Time t f Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward oltage c GS(th) R DS(on) g FS I S SD GS =, I D = 2µ DS =, GS = GS = 2, DS = GS = -2, DS = GS = DS, I D = 2µ GS =., I D = 8.3 GS = 2., I D =.2 DS =, I D = 8.3 DS =, GS =, f =. MHz DD =, I D =., GS =., R GEN = Ω DS =, I D = 8.3, GS =. GS =, I S = µ n n mω 22 3 mω S Notes : a.repetitive Rating : Pulse width limited by maximum junction temperature. b.surface Mounted on FR Board, t < sec. c.pulse Test : Pulse Width < 3µs, Duty Cycle < 2%. d.guaranteed by design, not subject to production testing. - 6

3 P-Channel Electrical Characteristics T = 2 C unless otherwise noted Off Characteristics Parameter Symbol Test Condition Min Typ Max Units Drain-Source Breakdown oltage Zero Gate oltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold oltage Static Drain-Source On-Resistance Forwand Traconductance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Trafer Capacitance Switching Characteristics d B DSS I DSS I GSSF IGSSR Turn-On Delay Time t d(on) Turn-On Rise Time t r Turn-Off Delay Time t d(off) Turn-On Fall Time t f Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward oltage c GS(th) R DS(on) g FS I S SD Notes : a.repetitive Rating : Pulse width limited by maximum junction temperature. b.surface Mounted on FR Board, t < sec. c.pulse Test : Pulse Width < 3µs, Duty Cycle < 2%. d.guaranteed by design, not subject to production testing. GS =, I D = -2µ DS = -, GS = GS = 2, DS = GS = -2, DS = GS = DS, I D = -2µ GS = -., I D = - GS = -2., I D = - DS = -, I D = - DS = -, GS =, f =. MHz DD = -, I D = -, GS = -., R GEN = 6Ω DS = -, I D = -, GS = -. GS =, I S = µ n n mω mω S - 62

4 N-CHNNEL GS =.,3.,3. 2 C ID, Drain Current () GS =2. GS =. ID, Drain Current () T J =2 C - C DS, Drain-to-Source oltage () GS, Gate-to-Source oltage () Figure. Output Characteristics Figure 2. Trafer Characteristics C, Capacitance () RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) I D =8.3 GS =. - - DS, Drain-to-Source oltage () Figure 3. Capacitance Figure. On-Resistance ariation TH, Normalized Gate-Source Threshold oltage DS = GS I D =2µ IS, Source-drain current () GS = SD, Body Diode Forward oltage () Figure. Gate Threshold ariation Figure 6. Body Diode Forward oltage ariation with Source Current - 63

5 P-CHNNEL -ID, Drain Current () - GS =.,3.,3. - GS =2. - GS =2. - GS = DS, Drain-to-Source oltage () Figure 7. Output Characteristics -ID, Drain Current () T J =2 C 2 C - C 2 3 -GS, Gate-to-Source oltage () Figure 8. Trafer Characteristics C, Capacitance () RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) I D =- GS = DS, Drain-to-Source oltage () Figure 9. Capacitance Figure. On-Resistance ariation TH, Normalized Gate-Source Threshold oltage DS = GS I D =-2µ IS, Source-drain current () GS = SD, Body Diode Forward oltage () Figure. Gate Threshold ariation Figure 2. Body Diode Forward oltage ariation with Source Current - 6

6 N-CHNNEL GS, Gate to Source oltage () 3 2 DS = I D =3.8 ID, Drain Current () 2 R DS(ON) Limit ms ms ms s s DC - T =2 C T J = C Single Pulse -2-2 Qg, Total Gate Charge () DS, Drain-Source oltage () P-CHNNEL -GS, Gate to Source oltage () 3 2 DS =- I D =- Figure 3. Gate Charge -ID, Drain Current () 2 Figure. Maximum Safe Operating rea R DS(ON) Limit ms ms s ms s DC - T =2 C T J = C Single Pulse -2-2 Qg, Total Gate Charge () -DS, Drain-Source oltage () Figure. Gate Charge Figure 6. Maximum Safe Operating rea - 6

7 DD ton toff GS RGEN IN G D RL OUT td(on) OUT tr td(off) 9% 9% % INERTED % tf 9% S IN % % % PULSE WIDTH Figure 7. Switching Test Circuit Figure 8. Switching Waveforms r(t),normalized Effective Traient Thermal Impedance - -2 D= Single Pulse PDM t t2. R J (t)=r (t) * R J 2. R J=See Datasheet 3. TJM-T = P* R J (t). Duty Cycle, D=t/t Square Wave Pulse Duration (sec) Figure 9. Normalized Thermal Traient Impedance Curve - 66